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  • 型号: TC4431COA
  • 制造商: Microchip
  • 库位|库存: xxxx|xxxx
  • 要求:
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TC4431COA产品简介:

ICGOO电子元器件商城为您提供TC4431COA由Microchip设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 TC4431COA价格参考。MicrochipTC4431COA封装/规格:PMIC - 栅极驱动器, High-Side or Low-Side Gate Driver IC Inverting 8-SOIC。您可以下载TC4431COA参考资料、Datasheet数据手册功能说明书,资料中有TC4431COA 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC MOSFET DRIVER 30V 1.5A 8-SOIC门驱动器 1.5A Sngl 30V Inv

产品分类

PMIC - MOSFET,电桥驱动器 - 外部开关集成电路 - IC

品牌

Microchip Technology

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

电源管理 IC,门驱动器,Microchip Technology TC4431COA-

数据手册

http://www.microchip.com/mymicrochip/filehandler.aspx?ddocname=en011707

产品型号

TC4431COA

PCN组件/产地

http://www.microchip.com/mymicrochip/NotificationDetails.aspx?id=5774&print=view

PCN设计/规格

http://www.microchip.com/mymicrochip/NotificationDetails.aspx?id=5704&print=view

上升时间

40 ns

下降时间

50 ns

产品

MOSFET Gate Drivers

产品种类

门驱动器

供应商器件封装

8-SOIC N

其它名称

TC4431C0A

包装

管件

商标

Microchip Technology

安装类型

表面贴装

安装风格

SMD/SMT

封装

Tube

封装/外壳

8-SOIC(0.154",3.90mm 宽)

封装/箱体

SOIC-8

工作温度

0°C ~ 70°C

工厂包装数量

100

延迟时间

62ns

最大功率耗散

470 mW

最大工作温度

+ 70 C

最小工作温度

0 C

标准包装

100

激励器数量

1 Driver

电压-电源

4.5 V ~ 30 V

电流-峰值

1.5A

电源电压-最大

30 V

电源电压-最小

4.5 V

电源电流

4 mA

类型

High Side

输入类型

反相

输出数

1

输出端数量

1

配置

Inverting

配置数

1

高压侧电压-最大值(自举)

-

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PDF Datasheet 数据手册内容提取

M TC4431/TC4432 1.5A High-Speed 30V MOSFET Drivers Features General Description • High Peak Output Current – 1.5A The TC4431/TC4432 are 30V CMOS buffer/drivers • Wide Input Supply Voltage Operating Range: suitable for use in high-side driver applications. They will not latch-up under any conditions within their power - 4.5V to 30V and voltage ratings. They can accept, without damage • High Capacitive Load Drive Capability: or logic upset, up to 300mA of reverse current (of - 1000pF in 25nsec either polarity) being forced back into their outputs. All • Short Delay Times – <78nsec Typ. terminals are fully protected against up to 4kV of • Low Supply Current: electrostatic discharge. - With Logic ‘1’ Input – 2.5mA Undervoltage lockout circuitry forces the output to a - With Logic ‘0’ Input – 300µA ‘low’ state when the input supply voltage drops below • Low Output Impedance – 7Ω 7V. For operation at lower voltages, disable the lockout and start-up circuit by grounding pin 3 (LOCK DIS); for • Latch-Up Protected: Will Withstand >300mA all other situations, pin 3 should be left floating. The Reverse Current under-voltage lockout and start-up circuit gives brown- • ESD Protected – 4kV out protection when driving MOSFETS. Applications • Small Motor Drive • Power MOSFET Driver • Driving Bipolar Transistors Package Types 8-PinPDIP/SOIC/CERDIP VDD 1 8 VDD IN 2 7 OUT TC4431 LOCK DIS 3 6 OUT GND 4 5 GND 7 2 6 Inverting VDD 1 8 VDD IN 2 7 OUT TC4432 LOCK DIS 3 6 OUT GND 4 5 GND 7 2 6 Non Inverting  2003 Microchip Technology Inc. DS21424C-page 1

TC4431/TC4432 Functional Block Diagram 8 VDD 3 UV LOCK LOCK DIS 2mA Inverting TC4431 7 OUT OUT 6 2 Non-Inverting Input 250mV TC4432 TC4431/TC4432 Inverting/Non Inverting 4, 5 GND Effective Input C = 10pF DS21424C-page 2  2003 Microchip Technology Inc.

TC4431/TC4432 1.0 ELECTRICAL † Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These CHARACTERISTICS are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the Absolute Maximum Ratings† operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for Supply Voltage.......................................................36V extended periods may affect device reliability. Input Voltage (Note1)...................V + 0.3V to GND DD Package Power Dissipation (T ≤ 70°C) A PDIP............................................................730mW CERDIP.......................................................800mW SOIC............................................................470mW Maximum Junction Temperature, T ................+150°C J Storage Temperature Range..............-65°C to +150°C DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, T = +25ºC with 4.5V ≤ V ≤ 30V. A DD Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage V 2.4 — — V IH Logic ‘0’, Low Input Voltage V — — 0.8 V IL Input Current (Note1) I -1 — 1 µA 0V ≤ V ≤ 12V IN IN Output High Output Voltage V V – 1.0 V – 0.8 — V I = 100mA OH DD DD OUT Low Output Voltage V — — 0.025 V OL Output Resistance R — 7 10 Ω I = 10mA, V = 30V O OUT DD Peak Output Current I — 3.0 — A Source: V = 30V PK DD — 1.5 — Sink: V = 30V DD Latch-Up Protection I — 0.3 — A Duty cycle ≤ 2%, t ≤ 300µsec REV Withstand Reverse Current Switching Time (Note2) Rise Time t — 25 40 nsec Figure4-1 R Fall Time t — 33 50 nsec Figure4-1 F Delay Time t — 62 80 nsec Figure4-1 D1 Delay Time t — 78 90 nsec Figure4-1 D2 Power Supply Power Supply Current I — 2.5 4 mA V = 3V S IN — 0.3 0.4 V = 0V IN Start-up Threshold V — 8.4 10 V S Drop-out Threshold V 7 7.7 — V Note3 DO Note 1: For inputs >12V, add a 1kΩ resistor in series with the input. See “Typical Characteristics” graph for input current. 2: Switching times are ensured by design. 3: For operation below 7V, pin 3 (LOCK DIS) should be tied to ground to disable the lockout and start-up circuit, otherwise, pin 3 must be left floating.  2003 Microchip Technology Inc. DS21424C-page 3

TC4431/TC4432 DC CHARACTERISTICS (Continued) Electrical Specifications: Unless otherwise noted, Over operating temperature range with 4.5V ≤ V ≤ 30V. DD Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage V 2.4 — — V IH Logic ‘0’, Low Input Voltage V — — 0.8 V IL Input Current (Note1) I -10 — 10 µA 0V ≤ V ≤ 12V IN IN Output High Output Voltage V V – 1.2 — — V I = 100mA OH DD OUT Low Output Voltage V — — 0.025 V OL Output Resistance R — — 12 Ω I = 10mA, V = 30V O OUT DD Switching Time (Note2) Rise Time t — — 60 nsec Figure4-1 R Fall Time t — — 70 nsec Figure4-1 F Delay Time t — — 100 nsec Figure4-1 D1 Delay Time t — — 110 nsec Figure4-1 D2 Power Supply Power Supply Current I — — 6 mA V = 3V S IN — — 0.7 V = 0V IN Start-up Threshold V — 8.4 10 V S Drop-out Threshold V 7 7.7 — V Note3 DO Note 1: For inputs >12V, add a 1kΩ resistor in series with the input. See “Typical Characteristics” graph for input current. 2: Switching times are ensured by design. 3: For operation below 7V, pin 3 (LOCK DIS) should be tied to ground to disable the lockout and start-up cir- cuit, otherwise, pin 3 must be left floating. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V ≤ 30V. DD Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (C) T 0 — +70 ºC A Specified Temperature Range (E) T -40 — +85 ºC A Maximum Junction Temperature T — — +150 ºC J Storage Temperature Range T -65 — +150 ºC A Package Thermal Resistances Thermal Resistance, 8L-SOIC θ — 155 — ºC/W JA Thermal Resistance, 8L-PDIP θ — 125 — ºC/W JA Thermal Resistance, 8L-CERDIP θ — 150 — ºC/W JA DS21424C-page 4  2003 Microchip Technology Inc.

TC4431/TC4432 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, T = +25ºC with 4.5V ≤ V ≤ 30V. A DD 60 150 50 VD D = 12V 2 MHz 125 tFALL CTAL O=A +D2 =5 °1C000 pF mA) 40 ec)100 (PPLY 30 900 kHz me (ns 75 ISU 20 600 kHz Ti 50 tRISE 10 25 200 kHz 20 kHz 0 0 100 1000 10,000 3 6 9 12 15 18 21 24 27 30 CLOAD (pF) VDD (V) FIGURE 2-1: Supply Current vs. FIGURE 2-3: Rise/Fall Time vs. V . DD Capacitive Load. 50 300 45 CLOAD = 1000 pF 40 250 tD1 TA = +25°C A) m 35 ENT ( 30 sec)200 T CURR 2205 WITHOUT 1 K RES. TIME (n115000 tD2 PU 15 N I 10 50 WITH 1 K RES. 5 0 03 6 9 12 15 18 21 24 27 30 3 6 9 12 15 18 21 24 27 30 INPUT VOLTAGE (VIN) VDD (V) FIGURE 2-2: Input Current vs. Input FIGURE 2-4: t and t Delay vs. V . D1 D2 DD Voltage.  2003 Microchip Technology Inc. DS21424C-page 5

TC4431/TC4432 3.0 PIN DESCRIPTIONS 3.3 Lockout Disable (LOCK DIS) The descriptions of the pins are listed in Table3-1. The lockout pin enables/disables the undervoltage lock-out feature of the device. If undervoltage lockout is TABLE 3-1: PIN FUNCTION TABLE desired (output is not enabled until the bias voltage reaches 8.4V (typical) on the rising edge and is dis- Pin No. Symbol Description abled when the bias voltage reaches 7.7V (typical) on 1 V Supply Input, 4.5V to 30V the falling edge), the lockout pin should be left floating. DD If operation below 7V is desired, the lockout pin should 2 IN TTL/CMOS Compatible Input be tied to ground. 3 LOCK DIS Input Pin, Enable/Disable for UV Lockout 3.4 Ground (GND) 4 GND Ground The ground pins are the return path for the bias current 5 GND Ground and for the high peak currents which discharge the load 6 OUT Drive Output, Pull Down capacitor. Both ground pins should be used to ensure 7 OUT Drive Output, Pull Up proper operation. The ground pins should be tied into a 8 V Supply Input, 4.5V to 30V ground plane or have short traces to the bias supply DD source return. 3.1 Supply Input (V ) DD 3.5 Drive Output (OUT) The V input is the bias supply input for the MOSFET DD The TC4431/TC4432 devices have individual source driver and is rated for 4.5V to 30V with respect to the ground pins. The V input should be bypassed to and sink output pins. This feature can be used to adjust DD ground with a local ceramic capacitor. The value of this the rise and fall time independently by adding separate capacitor should be chosen based on the capacitive charge and discharge resistors external to the device. Pin 7 (source output) can source 3A peak currents into load that is being driven. capacitive loads and pin 6 (sink output) can sink 1.5A peak currents from a capacitive load. 3.2 Control Input (IN) The MOSFET driver input is a TTL/CMOS compatible input with 250mV of hysteresis between the high and low threshold voltages. If an input signal level of greater than 12V is applied to the device, a series current limiting resistor is recommended. DS21424C-page 6  2003 Microchip Technology Inc.

TC4431/TC4432 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 30V 0V 10% tD1 tD2 t t F R V 4.7µF 0.1µF DD 90% 90% Output 1, 8 7 10% 10% 2 0V Input Output Inverting Driver 6 CL = 1000pF +5V 90% 3 Input LOCK DIS 10% 0V 4, 5 V DD 90% 90% Input: 100kHz, tD1 tD2 square wave, Output tR tF t = t ≤ 10nsec RISE FALL 0V 10% 10% Non-Inverting Driver FIGURE 4-1: Switching Time Test Circuit.  2003 Microchip Technology Inc. DS21424C-page 7

TC4431/TC4432 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX TC4431 XXXXXNNN CPA256 YYWW 0302 8-Lead SOIC (150 mil) Example: XXXXXXXX TC4431 XXXXYYWW COA0302 NNN 256 8-Lead CERDIP (300 mil) Example: XXXXXXXX TC4431 XXXXXNNN EJA256 YYWW 0302 Legend: XX...X Customer specific information* YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard OTP marking consists of Microchip part number, year code, week code, and traceability code. DS21424C-page 8  2003 Microchip Technology Inc.

TC4431/TC4432 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A A2 L c A1 β B1 p eB B Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .100 2.54 Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32 Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68 Base to Seating Plane A1 .015 0.38 Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26 Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60 Overall Length D .360 .373 .385 9.14 9.46 9.78 Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43 Lead Thickness c .008 .012 .015 0.20 0.29 0.38 Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78 Lower Lead Width B .014 .018 .022 0.36 0.46 0.56 Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92 Mold Draft Angle Top α 5 10 15 5 10 15 Mold Draft Angle Bottom β 5 10 15 5 10 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018  2003 Microchip Technology Inc. DS21424C-page 9

TC4431/TC4432 8-Lead Ceramic Dual In-line (JA) – 300 mil (CERDIP) E1 2 n 1 D E A2 A c L eB B1 B A1 p Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .100 2.54 Top to Seating Plane A .160 .180 .200 4.06 4.57 5.08 Standoff § A1 .020 .030 .040 0.51 0.77 1.02 Shoulder to Shoulder Width E .290 .305 .320 7.37 7.75 8.13 Ceramic Pkg. Width E1 .230 .265 .300 5.84 6.73 7.62 Overall Length D .370 .385 .400 9.40 9.78 10.16 Tip to Seating Plane L .125 .163 .200 3.18 4.13 5.08 Lead Thickness c .008 .012 .015 0.20 0.29 0.38 Upper Lead Width B1 .045 .055 .065 1.14 1.40 1.65 Lower Lead Width B .016 .018 .020 0.41 0.46 0.51 Overall Row Spacing eB .320 .360 .400 8.13 9.15 10.16 *Controlling Parameter JEDEC Equivalent: MS-030 Drawing No. C04-010 DS21424C-page 10  2003 Microchip Technology Inc.

TC4431/TC4432 8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC) E E1 p D 2 B n 1 h α 45° c A A2 φ β L A1 Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .050 1.27 Overall Height A .053 .061 .069 1.35 1.55 1.75 Molded Package Thickness A2 .052 .056 .061 1.32 1.42 1.55 Standoff § A1 .004 .007 .010 0.10 0.18 0.25 Overall Width E .228 .237 .244 5.79 6.02 6.20 Molded Package Width E1 .146 .154 .157 3.71 3.91 3.99 Overall Length D .189 .193 .197 4.80 4.90 5.00 Chamfer Distance h .010 .015 .020 0.25 0.38 0.51 Foot Length L .019 .025 .030 0.48 0.62 0.76 Foot Angle φ 0 4 8 0 4 8 Lead Thickness c .008 .009 .010 0.20 0.23 0.25 Lead Width B .013 .017 .020 0.33 0.42 0.51 Mold Draft Angle Top α 0 12 15 0 12 15 Mold Draft Angle Bottom β 0 12 15 0 12 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057  2003 Microchip Technology Inc. DS21424C-page 11

TC4431/TC4432 NOTES: DS21424C-page 12  2003 Microchip Technology Inc.

TC4431/TC4432 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Examples: a) TC4431COA:1.5A MOSFET driver, SOIC Device Temperature Package package, 0°C to +70°C. Range b) TC4431EJA: 1.5A MOSFET driver, CERDIP package, -40ºC to +85ºC. Device: TC4431: 1.5A High-Speed 30V MOSFET Driver, Inverting TC4432: 1.5A High-Speed 30V MOSFET Driver, a) TC4432CPA: 1.5A MOSFET driver, PDIP Non Inverting package, 0°C to +70°C. b) TC4432EPA: 1.5A MOSFET driver, PDIP Temperature Range: C = 0°C to +70°C package, -40°C to +85°C. E = -40°C to +85°C Package: JA = Ceramic Dual In-line (300 mil Body), 8-lead * OA = Plastic SOIC, (150 mil Body), 8-lead OA713 = Plastic SOIC, (150 mil Body), 8-lead (Tape and Reel) PA = Plastic DIP (300 mil Body), 8-lead * Offered in E-temp range only. Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 3. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2003 Microchip Technology Inc. DS21424C-page 13

TC4431/TC4432 NOTES: DS21424C-page 14  2003 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device Trademarks applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to The Microchip name and logo, the Microchip logo, KEELOQ, ensure that your application meets with your specifications. MPLAB, PIC, PICmicro, PICSTART, PRO MATE and No representation or warranty is given and no liability is PowerSmart are registered trademarks of Microchip assumed by Microchip Technology Incorporated with respect Technology Incorporated in the U.S.A. and other countries. to the accuracy or use of such information, or infringement of FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL patents or other intellectual property rights arising from such and The Embedded Control Solutions Company are use or otherwise. Use of Microchip’s products as critical registered trademarks of Microchip Technology Incorporated components in life support systems is not authorized except in the U.S.A. with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual Accuron, Application Maestro, dsPIC, dsPICDEM, property rights. dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICkit, PICDEM, PICDEM.net, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPIC, Select Mode, SmartSensor, SmartShunt, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2003, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified.  2003 Microchip Technology Inc. DS21424C-page 15

DSTEMP DS21424C-page 16  2003 Microchip Technology Inc.

M WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC Japan Microchip Technology Japan K.K. Corporate Office Australia Benex S-1 6F 2355 West Chandler Blvd. Microchip Technology Australia Pty Ltd 3-18-20, Shinyokohama Chandler, AZ 85224-6199 Marketing Support Division Kohoku-Ku, Yokohama-shi Tel: 480-792-7200 Fax: 480-792-7277 Suite 22, 41 Rawson Street Kanagawa, 222-0033, Japan Technical Support: 480-792-7627 Epping 2121, NSW Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Web Address: http://www.microchip.com Australia Korea Atlanta Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Microchip Technology Korea 3780 Mansell Road, Suite 130 168-1, Youngbo Bldg. 3 Floor Alpharetta, GA 30022 Microchip Technology Consulting (Shanghai) Samsung-Dong, Kangnam-Ku Tel: 770-640-0034 Fax: 770-640-0307 Co., Ltd., Beijing Liaison Office Seoul, Korea 135-882 Unit 915 Boston Tel: 82-2-554-7200 Fax: 82-2-558-5934 Bei Hai Wan Tai Bldg. 2 Lan Drive, Suite 120 No. 6 Chaoyangmen Beidajie Singapore Westford, MA 01886 Beijing, 100027, No. China Microchip Technology Singapore Pte Ltd. Tel: 978-692-3848 Fax: 978-692-3821 Tel: 86-10-85282100 Fax: 86-10-85282104 200 Middle Road Chicago China - Chengdu #07-02 Prime Centre Singapore, 188980 333 Pierce Road, Suite 180 Microchip Technology Consulting (Shanghai) Tel: 65-6334-8870 Fax: 65-6334-8850 Itasca, IL 60143 Co., Ltd., Chengdu Liaison Office Taiwan Tel: 630-285-0071 Fax: 630-285-0075 Rm. 2401-2402, 24th Floor, Dallas Ming Xing Financial Tower Microchip Technology (Barbados) Inc., No. 88 TIDU Street Taiwan Branch 4570 Westgrove Drive, Suite 160 11F-3, No. 207 Addison, TX 75001 CTehle: n8g6d-2u8 6-81607061662, 0C0h inFaax: 86-28-86766599 Tung Hua North Road Tel: 972-818-7423 Fax: 972-818-2924 Taipei, 105, Taiwan China - Fuzhou Detroit Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 Microchip Technology Consulting (Shanghai) Tri-Atria Office Building Co., Ltd., Fuzhou Liaison Office EUROPE 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Unit 28F, World Trade Plaza Austria No. 71 Wusi Road Tel: 248-538-2250 Fax: 248-538-2260 Microchip Technology Austria GmbH Fuzhou 350001, China Kokomo Tel: 86-591-7503506 Fax: 86-591-7503521 Durisolstrasse 2 2767 S. Albright Road China - Hong Kong SAR A-4600 Wels Austria Kokomo, IN 46902 Microchip Technology Hongkong Ltd. Tel: 43-7242-2244-399 Tel: 765-864-8360 Fax: 765-864-8387 Unit 901-6, Tower 2, Metroplaza Fax: 43-7242-2244-393 Los Angeles 223 Hing Fong Road Denmark 18201 Von Karman, Suite 1090 Kwai Fong, N.T., Hong Kong Microchip Technology Nordic ApS Irvine, CA 92612 Tel: 852-2401-1200 Fax: 852-2401-3431 Regus Business Centre Tel: 949-263-1888 Fax: 949-263-1338 China - Shanghai Lautrup hoj 1-3 Phoenix Microchip Technology Consulting (Shanghai) Ballerup DK-2750 Denmark 2355 West Chandler Blvd. Co., Ltd. Tel: 45-4420-9895 Fax: 45-4420-9910 Chandler, AZ 85224-6199 Room 701, Bldg. B France Far East International Plaza Tel: 480-792-7966 Fax: 480-792-4338 Microchip Technology SARL No. 317 Xian Xia Road Parc d’Activite du Moulin de Massy San Jose Shanghai, 200051 43 Rue du Saule Trapu Microchip Technology Inc. Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 Batiment A - ler Etage 2107 North First Street, Suite 590 China - Shenzhen 91300 Massy, France San Jose, CA 95131 Microchip Technology Consulting (Shanghai) Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Tel: 408-436-7950 Fax: 408-436-7955 Co., Ltd., Shenzhen Liaison Office Germany Toronto Rm. 1812, 18/F, Building A, United Plaza Microchip Technology GmbH 6285 Northam Drive, Suite 108 No. 5022 Binhe Road, Futian District Steinheilstrasse 10 Mississauga, Ontario L4V 1X5, Canada Shenzhen 518033, China D-85737 Ismaning, Germany Tel: 905-673-0699 Fax: 905-673-6509 Tel: 86-755-82901380 Fax: 86-755-8295-1393 Tel: 49-89-627-144-0 China - Qingdao Fax: 49-89-627-144-44 Rm. B505A, Fullhope Plaza, Italy No. 12 Hong Kong Central Rd. Microchip Technology SRL Qingdao 266071, China Via Quasimodo, 12 Tel: 86-532-5027355 Fax: 86-532-5027205 20025 Legnano (MI) India Milan, Italy Microchip Technology Inc. Tel: 39-0331-742611 Fax: 39-0331-466781 India Liaison Office United Kingdom Marketing Support Division Microchip Ltd. Divyasree Chambers 505 Eskdale Road 1 Floor, Wing A (A3/A4) Winnersh Triangle No. 11, O’Shaugnessey Road Wokingham Bangalore, 560 025, India Berkshire, England RG41 5TU Tel: 91-80-2290061 Fax: 91-80-2290062 Tel: 44-118-921-5869 Fax: 44-118-921-5820 05/30/03 DS21424C-page 17  2003 Microchip Technology Inc.

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