TC4420/TC4429 6A High-Speed MOSFET Drivers Features General Description • Latch-Up Protected: Will Withstand >1.5A The TC4420/TC4429 are 6A (peak), single-output Reverse Output Current MOSFET drivers. The TC4429 is an inverting driver (cid:127) Logic Input Will Withstand Negative Swing Up To (pin-compatible with the TC429), while the TC4420 is a 5V non-inverting driver. These drivers are fabricated in CMOS for lower power and more efficient operation (cid:127) ESD Protected: 4kV versus bipolar drivers. (cid:127) Matched Rise and Fall Times: Both devices have TTL/CMOS compatible inputs that - 25ns (2500pF load) can be driven as high as V + 0.3V or as low as –5V (cid:127) High Peak Output Current: 6A DD without upset or damage to the device. This eliminates (cid:127) Wide Input Supply Voltage Operating Range: the need for external level-shifting circuitry and its - 4.5V to 18V associated cost and size. The output swing is rail-to-rail, (cid:127) High Capacitive Load Drive Capability: 10,000pF ensuring better drive voltage margin, especially during (cid:127) Short Delay Time: 55ns (typ.) power-up/power-down sequencing. Propagational delay time is only 55ns (typ.) and the output rise and fall (cid:127) CMOS/TTL Compatible Input times are only 25ns (typ.) into 2500pF across the (cid:127) Low Supply Current With Logic ‘ 1’ Input: usable power supply range. - 450µA (typ.) Unlike other drivers, the TC4420/TC4429 are virtually (cid:127) Low Output Impedance: 2.5 Ω latch-up proof. They replace three or more discrete (cid:127) Output Voltage Swing to Within 25mV of Ground components, saving PCB area, parts and improving or VDD overall system reliability. (cid:127) Space-Saving 8-Pin SOIC and 8-Pin 6x5 DFN Packages Applications (cid:127) Switch-Mode Power Supplies (cid:127) Motor Controls (cid:127) Pulse Transformer Driver (cid:127) Class D Switching Amplifiers Package Types(1) 8-Pin CERDIP/ TC4420 TC4429 8-Pin DFN(2) TC4420 TC4429 5-Pin TO-220 PDIP/SOIC Tab is VDD 1 8 VDD VDD VDD 1 8 VDD VDD Common INPUT 2 TC4420 7 OUTPUT OUTPUT INPUT 2 TC4420 7 OUTPUT OUTPUT to VDD NC 3 TC4429 6 OUTPUT OUTPUT NC 3 TC4429 6 OUTPUT OUTPUT TC4420 TC4429 GND 4 5 GND GND GND 4 5 GND GND Note 1: Duplicate pins must both be connected for proper operation. NPUTGNDVDDGNDTPUT I U 2: Exposed pad of the DFN package is electrically isolated. O  2004 Microchip Technology Inc. DS21419C-page 1

TC4420/TC4429 Functional Block Diagram V DD TC4429 Inverting 500µA 300mV Output TC4420 Input Non-Inverting 4.7V GND Effective Input C = 38pF DS21419C-page 2  2004 Microchip Technology Inc.

TC4420/TC4429 1.0 ELECTRICAL † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These CHARACTERISTICS are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the Absolute Maximum Ratings† operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for Supply Voltage.....................................................+20V extended periods may affect device reliability. Input Voltage..................................– 5V to V + 0.3V DD Input Current (V > V )...................................50mA IN DD Power Dissipation (T ≤ 70°C) A 5-Pin TO-220....................................................1.6W CERDIP.......................................................800mW DFN...............................................................Note2 PDIP............................................................730mW SOIC............................................................470mW Package Power Dissipation (T ≤ 25°C) A 5-Pin TO-220 (With Heatsink)........................12.5W Thermal Impedances (To Case) 5-Pin TO-220 RθJ-C......................................10°C/W DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, T = +25°C with 4.5V ≤ V ≤ 18V. A DD Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input V 2.4 1.8 — V IH Voltage Logic ‘0’, Low Input Voltage V — 1.3 0.8 V IL Input Voltage Range V –5 — V +0.3 V IN DD Input Current I –10 — +10 µA 0V ≤ V ≤ V IN IN DD Output High Output Voltage V V – 0.025 — — V DC TEST OH DD Low Output Voltage V — — 0.025 V DC TEST OL Output Resistance, High R — 2.1 2.8 Ω I = 10mA, V = 18V OH OUT DD Output Resistance, Low R — 1.5 2.5 Ω I = 10mA, V = 18V OL OUT DD Peak Output Current I — 6.0 — A V = 18V PK DD Latch-Up Protection I — > 1.5 — A Duty cycle ≤ 2%, t ≤ 300µsec REV Withstand Reverse Current Switching Time (Note1) Rise Time t — 25 35 ns Figure4-1, C = 2,500pF R L Fall Time t — 25 35 ns Figure4-1, C = 2,500pF F L Delay Time t — 55 75 ns Figure4-1 D1 Delay Time t — 55 75 ns Figure4-1 D2 Power Supply Power Supply Current I — 0.45 1.5 mA V = 3V S IN — 55 150 µA V = 0V IN Operating Input Voltage V 4.5 — 18 V DD Note 1: Switching times ensured by design. 2: Package power dissipation is dependent on the copper pad area on the PCB.  2004 Microchip Technology Inc. DS21419C-page 3

TC4420/TC4429 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ V ≤ 18V. DD Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input V 2.4 — — V IH Voltage Logic ‘0’, Low Input Voltage V — — 0.8 V IL Input Voltage Range V –5 — V + 0.3 V IN DD Input Current I –10 — +10 µA 0V ≤ V ≤ V IN IN DD Output High Output Voltage V V – 0.025 — — V DC TEST OH DD Low Output Voltage V — — 0.025 V DC TEST OL Output Resistance, High R — 3 5 Ω I = 10mA, V = 18V OH OUT DD Output Resistance, Low R — 2.3 5 Ω I = 10mA, V = 18V OL OUT DD Switching Time (Note1) Rise Time t — 32 60 ns Figure4-1, C = 2,500pF R L Fall Time t — 34 60 ns Figure4-1, C = 2,500pF F L Delay Time t — 50 100 ns Figure4-1 D1 Delay Time t — 65 100 ns Figure4-1 D2 Power Supply Power Supply Current I — 0.45 3 mA V = 3V S IN — 60 400 µA V = 0V IN Operating Input Voltage V 4.5 — 18 V DD Note 1: Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V ≤ 18V. DD Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (C) T 0 — +70 °C A Specified Temperature Range (I) T –25 — +85 °C A Specified Temperature Range (E) T –40 — +85 °C A Specified Temperature Range (V) T –40 — +125 °C A Maximum Junction Temperature T — — +150 °C J Storage Temperature Range T –65 — +150 °C A Package Thermal Resistances Thermal Resistance, 5L-TO-220 θ — 71 — °C/W JA Thermal Resistance, 8L-CERDIP θ — 150 — °C/W JA Thermal Resistance, 8L-6x5 DFN θ — 33.2 — °C/W Typical four-layer board JA with vias to ground plane. Thermal Resistance, 8L-PDIP θ — 125 — °C/W JA Thermal Resistance, 8L-SOIC θ — 155 — °C/W JA DS21419C-page 4  2004 Microchip Technology Inc.

TC4420/TC4429 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, T = +25°C with 4.5V ≤ V ≤ 18V. A DD 120 100 100 C L = 10,000 pF 80 80 Time (nsec) 60 C L = 4700 pF me (nsec) 6400 C CL =L =1 04,700000 ppFF 40 Ti C L = 2200 pF C L = 2200 pF 20 20 0 0 5 7 9 11 13 15 5 7 9 11 13 15 Supply Voltage (V) Supply Voltage (V) FIGURE 2-1: Rise Time vs. Supply FIGURE 2-4: Fall Time vs. Supply Voltage. Voltage. 100 100 80 80 60 60 Time (nsec) 40 VVD D D D = = 1 52VV VD D = 18V Time (nsec)40 VVDD D D == 152VV VD D = 18V 20 20 10 10 1000 10,000 1000 10,000 Capcitive Load (pF) Capacitive Load (pF) FIGURE 2-2: Rise Time vs. Capacitive FIGURE 2-5: Fall Time vs. Capacitive Load. Load. 50 84 C L = 2200 pF VD D = 15V VD D = 18V 70 40 Delay Time (nsec)3200 tD2 tD1 pply Current (mA)542628 500 kHz u 10 S 200 kHz 14 20 kHz 0 0 –60 –20 20 60 100 140 0 100 1000 10,000 TA (°C) Capacitive Load (pF) FIGURE 2-3: Propagation Delay Time vs. FIGURE 2-6: Supply Current vs. Temperature. Capacitive Load.  2004 Microchip Technology Inc. DS21419C-page 5

TC4420/TC4429 Note: Unless otherwise indicated, T = +25°C with 4.5V ≤ V ≤ 18V. A DD 50 5 C L = 2200 pF VD D = 18V 40 100 mA 4 Time (nsec)3200 tFALL tRISE ΩR ( )OUT 10 mA 50 mA 3 10 0 2 –60 –20 20 60 100 140 5 7 9 11 13 15 TA (°C) Supply Voltage (V) FIGURE 2-7: Rise and Fall Times vs. FIGURE 2-10: High-State Output Temperature. Resistance vs Supply Voltage. 65 200 Load = 2200 pF 60 160 Delay Time (nsec)554505 ttDD21 Delay Time (nsec)12800 InputI n2p.4uIVnt p3uVt 5V 40 40 Input 8V and 10V 35 0 4 6 8 10 12 14 16 18 5 6 7 8 9 10 11 12 13 14 15 Supply Voltage (V) V D D (V) FIGURE 2-8: Propagation Delay Time vs. FIGURE 2-11: Effect of Input Amplitude on Supply Voltage. Propagation Delay. 1000 2.5 C L = 2200 pF 18V ply Current (mA) 100 150VV ΩR ( )OUT 2 100 mA50 mA up 10 1.5 S 10 mA 0 1 0 100 1000 10,000 5 7 9 11 13 15 Frequency (kHz) Supply Voltage (V) FIGURE 2-9: Supply Current vs. FIGURE 2-12: Low-State Output Frequency. Resistance vs. Supply Voltage. DS21419C-page 6  2004 Microchip Technology Inc.

TC4420/TC4429 Note: Unless otherwise indicated, T = +25°C with 4.5V ≤ V ≤ 18V. A DD 4 -80 1 3 S) x A(cid:127) ea ( 2 Ar er ov oss 1 Cr 0 5 6 7 8 9 10 11 12 13 14 15 Supply Voltage (V) The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2. FIGURE 2-13: Crossover Energy.  2004 Microchip Technology Inc. DS21419C-page 7

TC4420/TC4429 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. Pin No. Pin No. 8-Pin CERDIP/ Symbol Description 8-Pin DFN 5-Pin TO-220 PDIP/SOIC 1 1 — V Supply input, 4.5V to 18V DD 2 2 1 INPUT Control input, TTL/CMOS compatible input 3 3 — NC No Connection 4 4 2 GND Ground 5 5 4 GND Ground 6 6 5 OUTPUT CMOS push-pull output 7 7 — OUTPUT CMOS push-pull output 8 8 3 V Supply input, 4.5V to 18V DD — PAD — NC Exposed Metal Pad — — TAB V Metal Tab is at the V Potential DD DD 3.1 Supply Input (V ) 3.3 CMOS Push-Pull Output DD The V input is the bias supply for the MOSFET driver The MOSFET driver output is a low-impedance, DD and is rated for 4.5V to 18V with respect to the ground CMOS, push-pull style output capable of driving a pins. The V input should be bypassed to ground with capacitive load with 6.0A peak currents. The MOSFET DD a local ceramic capacitor. The value of the capacitor driver output is capable of withstanding 1.5A peak should be chosen based on the capacitive load that is reverse currents of either polarity. being driven. A minimum value of 1.0µF is suggested. 3.4 Ground 3.2 Control Input The ground pins are the return path for the bias current The MOSFET driver input is a high-impedance, and the high peak currents that discharge the load TTL/CMOS compatible input. The input circuitry of the capacitor. The ground pins should be tied into a ground TC4420/TC4429 MOSFET driver also has a “speed- plane or have very short traces to the bias supply up” capacitor. This helps to decrease the propagation source return. delay times of the driver. Because of this, input signals with slow rising or falling edges should not be used, as 3.5 Exposed Metal Pad this can result in double-pulsing of the MOSFET driver output. The exposed metal pad of the 6x5 DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board (PCB) to aid in heat removal from the package. DS21419C-page 8  2004 Microchip Technology Inc.

TC4420/TC4429 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 18V 0V 10% tD1 tD2 t t F R 4.7µF +18V 90% 90% 1 8 Output 10% 10% 0.1µF 0.1µF 0V Inverting Driver Input 2 6 Output TC4429 7 +5V C = 2,500pF 90% L Input 4 5 10% 0V +18V 90% 90% tD1 tD2 Output tR tF Input: 100kHz, square wave, 0V 10% 10% t = t ≤ 10ns RISE FALL Non-Inverting Driver TC4420 Note: Pinout shown is for the PDIP, SOIC, DFN and CERDIP packages. FIGURE 4-1: Switching Time Test Circuits.  2004 Microchip Technology Inc. DS21419C-page 9

TC4420/TC4429 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 5-Lead TO-220 Example: XXXXXXXXX TC4420CAT XXXXXXXXX 0419256 YYWWNNN 8-Lead CERDIP (300 mil) Example: XXXXXXXX TC4420 XXXXXNNN MJA256 YYWW 0419 8-Lead DFN Example: XXXXXXX TC4420 XXXXXXX EMF XXYYWW 0419 NNN 256 Legend: XX...X Customer specific information* YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard OTP marking consists of Microchip part number, year code, week code, and traceability code. DS21419C-page 10  2004 Microchip Technology Inc.

TC4420/TC4429 Package Marking Information (Continued) 8-Lead PDIP (300 mil) Example: XXXXXXXX TC4420 XXXXXNNN CPA256 YYWW 0419 8-Lead SOIC (150 mil) Example: XXXXXXXX TC4420 XXXXYYWW EOA0419 NNN 256  2004 Microchip Technology Inc. DS21419C-page 11

TC4420/TC4429 5-Lead Plastic Transistor Outline (AT) (TO-220) L H1 Q b e3 e1 E e EJECTOR PIN ØP a(5X) C1 A J1 F D Units INCHES* MILLIMETERS Dimension Limits MIN MAX MIN MAX Lead Pitch e .060 .072 1.52 1.83 Overall Lead Centers e1 .263 .273 6.68 6.93 Space Between Leads e3 .030 .040 0.76 1.02 Overall Height A .160 .190 4.06 4.83 Overall Width E .385 .415 9.78 10.54 Overall Length D .560 .590 14.22 14.99 Flag Length H1 .234 .258 5.94 6.55 Flag Thickness F .045 .055 1.14 1.40 Through Hole Center Q .103 .113 2.62 2.87 Through Hole Diameter P .146 .156 3.71 3.96 Lead Length L .540 .560 13.72 14.22 Base to Bottom of Lead J1 .090 .115 2.29 2.92 Lead Thickness C1 .014 .022 0.36 0.56 Lead Width b .025 .040 0.64 1.02 Mold Draft Angle a 3° 7° 3° 7° *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC equivalent: TO-220 Drawing No. C04-036 DS21419C-page 12  2004 Microchip Technology Inc.

TC4420/TC4429 8-Lead Ceramic Dual In-line – 300 mil (JA) (CERDIP) E1 2 n 1 D E A2 A c L eB B1 B A1 p Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .100 2.54 Top to Seating Plane A .160 .180 .200 4.06 4.57 5.08 Standoff § A1 .020 .030 .040 0.51 0.77 1.02 Shoulder to Shoulder Width E .290 .305 .320 7.37 7.75 8.13 Ceramic Pkg. Width E1 .230 .265 .300 5.84 6.73 7.62 Overall Length D .370 .385 .400 9.40 9.78 10.16 Tip to Seating Plane L .125 .163 .200 3.18 4.13 5.08 Lead Thickness c .008 .012 .015 0.20 0.29 0.38 Upper Lead Width B1 .045 .055 .065 1.14 1.40 1.65 Lower Lead Width B .016 .018 .020 0.41 0.46 0.51 Overall Row Spacing eB .320 .360 .400 8.13 9.15 10.16 *Controlling Parameter JEDEC Equivalent: MS-030 Drawing No. C04-010  2004 Microchip Technology Inc. DS21419C-page 13

TC4420/TC4429 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated DS21419C-page 14  2004 Microchip Technology Inc.

TC4420/TC4429 8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP) E1 D 2 n 1 α E A A2 L c A1 β B1 p eB B Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .100 2.54 Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32 Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68 Base to Seating Plane A1 .015 0.38 Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26 Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60 Overall Length D .360 .373 .385 9.14 9.46 9.78 Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43 Lead Thickness c .008 .012 .015 0.20 0.29 0.38 Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78 Lower Lead Width B .014 .018 .022 0.36 0.46 0.56 Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92 Mold Draft Angle Top α 5 10 15 5 10 15 Mold Draft Angle Bottom β 5 10 15 5 10 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018  2004 Microchip Technology Inc. DS21419C-page 15

TC4420/TC4429 8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC) E E1 p D 2 B n 1 h α 45° c A A2 φ β L A1 Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .050 1.27 Overall Height A .053 .061 .069 1.35 1.55 1.75 Molded Package Thickness A2 .052 .056 .061 1.32 1.42 1.55 Standoff § A1 .004 .007 .010 0.10 0.18 0.25 Overall Width E .228 .237 .244 5.79 6.02 6.20 Molded Package Width E1 .146 .154 .157 3.71 3.91 3.99 Overall Length D .189 .193 .197 4.80 4.90 5.00 Chamfer Distance h .010 .015 .020 0.25 0.38 0.51 Foot Length L .019 .025 .030 0.48 0.62 0.76 Foot Angle φ 0 4 8 0 4 8 Lead Thickness c .008 .009 .010 0.20 0.23 0.25 Lead Width B .013 .017 .020 0.33 0.42 0.51 Mold Draft Angle Top α 0 12 15 0 12 15 Mold Draft Angle Bottom β 0 12 15 0 12 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 DS21419C-page 16  2004 Microchip Technology Inc.

TC4420/TC4429 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X XX XXX X Examples: a) TC4420CAT: 6A High-Speed MOSFET Device Temperature Package Tape and PB Free Driver, Non-inverting, Range Reel TO-220 package, 0°C to +70°C. b) TC4420EOA: 6A High-Speed MOSFET Device: TC4420: 6A High-Speed MOSFET Driver, Non-Inverting TC4429: 6A High-Speed MOSFET Driver, Inverting Driver, Non-inverting, SOIC package, -40°C to +85°C. Temperature Range: C = 0°C to +70°C (PDIP, SOIC, and TO-220 Only) c) TC4420VMF: 6A High-Speed MOSFET I = -25°C to +85°C (CERDIP Only) E = -40°C to +85°C Driver, Non-inverting, V = -40°C to +125°C DFN package, -40°C to +125°C. Package: AT = TO-220, 5-lead (C-Temp Only) a) TC4429CAT: 6A High-Speed MOSFET JA = Ceramic Dual In-line (300 mil Body), 8-lead Driver, Inverting, (I-Temp Only) TO-220 package, MF = Dual, Flat, No-Lead (6X5 mm Body), 8-lead 0°C to +70°C MF713 = Dual, Flat, No-Lead (6X5 mm Body), 8-lead (Tape and Reel) b) TC4429EPA: 6A High-Speed MOSFET PA = Plastic DIP (300 mil Body), 8-lead Driver, Inverting, OA = Plastic SOIC, (150 mil Body), 8-lead PDIP package, OA713 = Plastic SOIC, (150 mil Body), 8-lead -40°C to +85°C (Tape and Reel) c) TC4429VMF: 6A High-Speed MOSFET PB Free G = Lead-Free device* = Blank Driver, Inverting, DFN package, * Available on selected packages. Contact your local sales -40°C to +125°C representative for availability Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 3. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2004 Microchip Technology Inc. DS21419C-page 17

TC4420/TC4429 NOTES: DS21419C-page 18  2004 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices: (cid:127) Microchip products meet the specification contained in their particular Microchip Data Sheet. (cid:127) Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. (cid:127) There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. (cid:127) Microchip is willing to work with the customer who is concerned about the integrity of their code. (cid:127) Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device Trademarks applications and the like is intended through suggestion only The Microchip name and logo, the Microchip logo, Accuron, and may be superseded by updates. It is your responsibility to dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, ensure that your application meets with your specifications. PICSTART, PROMATE, PowerSmart, rfPIC, and No representation or warranty is given and no liability is SmartShunt are registered trademarks of Microchip assumed by Microchip Technology Incorporated with respect Technology Incorporated in the U.S.A. and other countries. to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL, use or otherwise. Use of Microchip’s products as critical SmartSensor and The Embedded Control Solutions Company components in life support systems is not authorized except are registered trademarks of Microchip Technology with express written approval by Microchip. No licenses are Incorporated in the U.S.A. conveyed, implicitly or otherwise, under any intellectual Analog-for-the-Digital Age, Application Maestro, dsPICDEM, property rights. dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2004, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.  2004 Microchip Technology Inc. DS21419C-page 19

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