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  • 型号: TC4428AMJA
  • 制造商: Microchip
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TC4428AMJA产品简介:

ICGOO电子元器件商城为您提供TC4428AMJA由Microchip设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 TC4428AMJA价格参考。MicrochipTC4428AMJA封装/规格:PMIC - 栅极驱动器, 低压侧 Gate Driver IC 反相,非反相 8-CERDIP。您可以下载TC4428AMJA参考资料、Datasheet数据手册功能说明书,资料中有TC4428AMJA 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC MOSFET DVR 1.5A DUAL HS 8CDIP门驱动器 1.5A Dual td Match

产品分类

PMIC - MOSFET,电桥驱动器 - 外部开关集成电路 - IC

品牌

Microchip Technology

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

电源管理 IC,门驱动器,Microchip Technology TC4428AMJA-

数据手册

点击此处下载产品Datasheethttp://www.microchip.com/mymicrochip/filehandler.aspx?ddocname=en022493http://www.microchip.com/mymicrochip/filehandler.aspx?ddocname=en023833

产品型号

TC4428AMJA

PCN设计/规格

http://www.microchip.com/mymicrochip/NotificationDetails.aspx?id=5580&print=view

PCN过时产品

http://www.microchip.com/mymicrochip/NotificationDetails.aspx?id=5470&print=view

上升时间

19 ns

下降时间

19 ns

产品

MOSFET Gate Drivers

产品种类

门驱动器

供应商器件封装

8-CERDIP

包装

管件

商标

Microchip Technology

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

8-CDIP(0.300",7.62mm)

封装/箱体

CDIP-8

工作温度

-55°C ~ 125°C

工厂包装数量

56

延迟时间

30ns

最大功率耗散

800 mW

最大工作温度

+ 125 C

最小工作温度

- 55 C

标准包装

56

激励器数量

2 Driver

电压-电源

4.5 V ~ 18 V

电流-峰值

1.5A

电源电压-最大

18 V

电源电压-最小

4.5 V

电源电流

4.5 mA

类型

Low Side

输入类型

反相和非反相

输出数

2

输出端数量

2

配置

Inverting, Non-Inverting

配置数

2

高压侧电压-最大值(自举)

-

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PDF Datasheet 数据手册内容提取

TC4426AM/TC4427AM/TC4428AM 1.5A Dual High-Speed Power MOSFET Drivers Features General Description • High Peak Output Current: 1.5A The TC4426AM/TC4427AM/TC4428AM are improved • Wide Input Supply Voltage Operating Range: versions of the earlier TC4426M/TC4427M/TC4428M family of MOSFET drivers. In addition to matched rise - 4.5V to 18V and fall times, the TC4426AM/TC4427AM/TC4428AM • High Capacitive Load Drive Capability: devices have matched leading and falling edge - 1000pF in 25ns (typ.) propagation delay times. • Short Delay Times: 30ns (typ.) These devices are highly latch-up resistant under any • Matched Rise, Fall and Delay Times conditions within their power and voltage ratings. They • Low Supply Current: are not subject to damage when up to 5V of noise - With Logic ‘1’ Input – 1mA (typ.) spiking (of either polarity) occurs on the ground pin. - With Logic ‘0’ Input – 100µA (typ.) They can accept, without damage or logic upset, up to 500mA of reverse current (of either polarity) being • Low Output Impedance: 7(typ.) forced back into their outputs. All terminals are fully • Latch-Up Protected: Will Withstand 0.5A Reverse protected against Electrostatic Discharge (ESD) up to Current 4kV. • Input: Will Withstand Negative Inputs Up to 5V The TC4426AM/TC4427AM/TC4428AM MOSFET • ESD Protected: 4kV drivers can easily charge/discharge 1000pF gate • Pin-compatible with the capacitances in under 30ns, while providing low TC426M/TC427M/TC428M and enough impedances in both the on and off states to TC4426M/TC4427M/TC4428M ensure the MOSFET's intended state will not be • Wide Operating Temperature Range: affected, even by large transients. - -55°C to +125°C Package Types • See TC4426A/TC4427A/TC4428A Data Sheet (DS21423) for additional temperature range and packaging offerings 8-Pin CERDIP TC4426AM TC4427AM TC4428AM Applications NC 1 MMM 8 NC NC NC • Switch-mode Power Supplies IN A 2 6A7A8A 7 OUT A OUT A OUT A • Line Drivers GND 3 442442442 6 VDD VDD VDD • Pulse Transformer Drive IN B 4 CCC 5 OUT B OUT B OUT B TTT  2005-2013 Microchip Technology Inc. DS21939B-page 1

TC4426AM/TC4427AM/TC4428AM Functional Block Diagram V DD Inverting 300mV Output Non-Inverting Input Effective 4.7V Input C = 12pF (Each Input) TC4426AM/TC4427AM/TC4428AM(1) GND(2) Note 1: The TC4426AM has two inverting drivers; the TC4427AM has two non-inverting drivers; the TC4428AM has one inverting and one non-inverting driver. 2: Ground any unused driver input. DS21939B-page 2  2005-2013 Microchip Technology Inc.

TC4426AM/TC4427AM/TC4428AM 1.0 ELECTRICAL † Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the CHARACTERISTICS device. These are stress ratings only and functional operation of the device at these or any other conditions above those Absolute Maximum Ratings† indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for Supply Voltage................................................................+22V extended periods may affect device reliability. Input Voltage, IN A or IN B..........(V + 0.3V) to (GND – 5V) DD DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V V 18V. DD Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL — — 0.8 V Input Current I -1.0 — +1.0 µA 0VV V IN IN DD -10 — +10 Output High Output Voltage V V – 0.025 — — V DC TEST OH DD Low Output Voltage V — — 0.025 V DC TEST OL Output Resistance R — 7 9  I = 10mA, V = 18V, T = +25°C O OUT DD A — 8 12 -55°C  T  +125°C A Peak Output Current I — 1.5 — A V = 18V PK DD Latch-Up Protection I — >0.5 — A Duty cycle2%, t 300µs REV Withstand Reverse Current V = 18V DD Switching Time (Note1) Rise Time t — 25 35 ns T = +25°C R A — 30 40 -55°C  T  +125°C, Figure4-1 A Fall Time t — 25 35 ns T = +25°C F A — 30 40 -55°C  T  +125°C, Figure4-1 A Delay Time t — 30 35 ns T = +25°C D1 A — 38 50 -55°C  T  +125°C, Figure4-1 A Delay Time t — 30 35 ns T = +25°C D2 A — 38 50 -55°C  T  +125°C, Figure4-1 A Power Supply Power Supply Current I — 1.0 2.0 mA V = 3V (Both inputs) S IN — 0.1 0.2 V = 0V (Both inputs), V = 18V IN DD Note 1: Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  V  18V. DD Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (M) T -55 — +125 ºC A Maximum Junction Temperature T — — +150 ºC J Storage Temperature Range T -65 — +150 ºC A Package Thermal Resistances Thermal Resistance, 8L-CERDIP  — 150 — ºC/W JA  2005-2013 Microchip Technology Inc. DS21939B-page 3

TC4426AM/TC4427AM/TC4428AM 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, over operating temperature range with 4.5V V 18V. DD 100 100 80 CL = 2200 pF TA = +25°C 80 CCLL == 22220000 ppFF TA = +25°C t (nsec)RISE 4600 CL = 150C0 Lp F= 1000 pCFL = 470 pF (nsec)tFALL4600 CL = 150C0 Lp F= 1000 pCFL = 470 pF 20 20 0 CL = 100 pF 0 CCLL= 1=0 01p0F0 pF 5.0 7.5 10.0 12.5 15.0 17.5 5.0 7.5 10.0 12.5 15.0 17.5 VDD (V) VDD (V) FIGURE 2-1: Rise Time vs. Supply FIGURE 2-4: Fall Time vs. Supply Voltage. Voltage. 110 60 100 tD1 CL = 1000 pF 55 CL = 1000 pF me (nsec) 789000 VDD = 10V me (nsec) 544050 tD2 tD1 Delay Ti 654000 tD2 Delay Ti 3305 30 25 20 20 1 2 3 4 5 6 7 8 9 0 5 10 15 20 Input Amplitude (V) VDD (V) FIGURE 2-2: Delay Time vs. Input FIGURE 2-5: Propagation Delay Time vs. Amplitude. Supply Voltage. 28 40 26 CL = 1000 pF CL = 1000 pF VDD = 18V c) 35 VDD = 18V Time (nsec) 22212408 elay Time (nse 2350 tD2 tRISE D 20 16 tD1 14 tFALL 15 -100 -50 0 50 100 150 -100 -50 0 50 100 150 TEMPERATURE (°C) TEMPERATURE (°C) FIGURE 2-3: Rise and Fall Times vs. FIGURE 2-6: Propagation Delay Time vs. Temperature. Temperature. DS21939B-page 4  2005-2013 Microchip Technology Inc.

TC4426AM/TC4427AM/TC4428AM Note: Unless otherwise indicated, over operating temperature range with 4.5V V 18V. DD 30 30 TA = +125°C 25 25 TA = +125°C Ω ()ON) 2105 TA = +25°C Ω ()ON) 2105 RDS( 10 RDS( 10 TA = +25°C 5 5 0 0 0 5 10 15 20 0 5 10 15 20 VDD (V) VDD (V) FIGURE 2-7: High-State Output FIGURE 2-10: Low-State Output Resistance. Resistance. 60 60 CL = 2200 pF CL = 1500 pF VDD = 18V 2 MHz VDD = 18V 900 kHz 50 50 mA) 40 CL = 1000 pF CL = 100 pF mA) 40 600 kHz (PLY30 (PLY30 P P ISU20 ISU 20 200 kHz 10 10 20 kHz 0 0 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 FREQUENCY (kHz) CLOAD (pF) FIGURE 2-8: Supply Current vs. FIGURE 2-11: Supply Current vs. Frequency. Capacitive Load. 80 80 70 VDD = 12V CL = 2200 pF 70 VDD = 12V 2 MHz 60 CL = 1500 pF 60 (mA)Y 5400 CL = 1000 pF (mA)Y 5400 L L 900 kHz PP 30 PP 30 ISU 20 CL = 100 pF ISU 20 600 kHz 200 kHz 10 10 20 kHz 0 0 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 FREQUENCY (kHz) CLOAD (pF) FIGURE 2-9: Supply Current vs. FIGURE 2-12: Supply Current vs. Frequency. Capacitive Load.  2005-2013 Microchip Technology Inc. DS21939B-page 5

TC4426AM/TC4427AM/TC4428AM Note: Unless otherwise indicated, over operating temperature range with 4.5V V 18V. DD 40 40 35 VDD = 6V CL = 2200 pF 35 VDD = 6V 2 MHz 30 30 mA) 25 CL = 1500 pF mA) 25 (PLY 20 CL = 1000 pF (PLY 20 900 kHz ISUP 1150 CL = 100 pF ISUP 1150 600 kHz 5 5 200 kHz 20 kHz 0 0 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 FREQUENCY (kHz) CLOAD (pF) FIGURE 2-13: Supply Current vs. FIGURE 2-15: Supply Current vs. Frequency. Capacitive Load. 900 1100 800 BOTH INPUTS = 1 1000 900 BOTH INPUTS = 1 (µA)T 760000 TA = 25°C (µA)T 870000 VDD = 18V N 500 N 600 E E SC 400 SC 500 UIE 300 UIE 400 Q Q 300 I 200 BOTH INPUTS = 0 I 200 BOTH INPUTS = 0 100 100 0 0 0 5 10 15 20 -100 -50 0 50 100 150 VDD (V) TEMPERATURE (°C) FIGURE 2-14: Quiescent Supply Current FIGURE 2-16: Quiescent Supply Current vs. Voltage. vs. Temperature. DS21939B-page 6  2005-2013 Microchip Technology Inc.

TC4426AM/TC4427AM/TC4428AM 3.0 PIN DESCRIPTIONS 3.3 Outputs A & B (OUT A and OUT B) The descriptions of the pins are listed in Table3-1. MOSFET driver OUT A & B are low-impedance, CMOS, push-pull style outputs. The pull-down and pull- TABLE 3-1: PIN FUNCTION TABLE up devices are of equal strength, making the rise and fall times equivalent. 8-Pin Symbol Description CERDIP 3.4 Supply Input (V ) DD 1 NC No connection The V input is the bias supply for the MOSFET driver 2 IN A Input A DD and is rated for 4.5V to 18V, with respect to the ground 3 GND Ground pin. The V input should be bypassed with local DD 4 IN B Input B ceramic capacitors. The value of these capacitors should be chosen based on the capacitive load that is 5 OUT B Output B being driven. 6 V Supply input DD 7 OUT A Output A 8 NC No connection 3.1 Inputs A & B (IN A and IN B) MOSFET driver IN A & B are high-impedance, TTL/CMOS-compatible inputs. These inputs also have 300mV of hysteresis between the high and low thresholds, which prevents output glitching even when the rise and fall time of the input signal is very slow. 3.2 Ground (GND) The GND pin is the return path for both the bias current and the high peak current that discharges the external load capacitance. The ground pin should be tied into a ground plane or have a very short trace to the bias sup- ply source return.  2005-2013 Microchip Technology Inc. DS21939B-page 7

TC4426AM/TC4427AM/TC4428AM 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 18V 0V 10% tD1 tD2 t t F R V 4.7µF 0.1µF DD 90% 90% Output 6 10% 10% 2 7 0V Input Output Inverting Driver C = 1000pF L 4 5 +5V 90% Input 10% 0V 3 V DD 90% 90% Input: 100kHz, Output tD1 tR tD2 tF square wave, tRISE = tFALL  10ns 0V 10% 10% Non-Inverting Driver FIGURE 4-1: Switching Time Test Circuit. DS21939B-page 8  2005-2013 Microchip Technology Inc.

TC4426AM/TC4427AM/TC4428AM 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead CERDIP (300 mil) Example: XXXXXXXX TC4427A XXXXXNNN MJA^e^3 256 YYWW 0543 Legend: XX...X Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code e3 Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( e 3 ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2005-2013 Microchip Technology Inc. DS21939B-page 9

TC4426AM/TC4427AM/TC4428AM 8-Lead Ceramic Dual In-line – 300 mil (CERDIP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E1 2 n 1 D E A2 A c L eB B1 B A1 p Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .100 2.54 Top to Seating Plane A .160 .180 .200 4.06 4.57 5.08 Standoff § A1 .020 .030 .040 0.51 0.77 1.02 Shoulder to Shoulder Width E .290 .305 .320 7.37 7.75 8.13 Ceramic Pkg. Width E1 .230 .265 .300 5.84 6.73 7.62 Overall Length D .370 .385 .400 9.40 9.78 10.16 Tip to Seating Plane L .125 .163 .200 3.18 4.13 5.08 Lead Thickness c .008 .012 .015 0.20 0.29 0.38 Upper Lead Width B1 .045 .055 .065 1.14 1.40 1.65 Lower Lead Width B .016 .018 .020 0.41 0.46 0.51 Overall Row Spacing eB .320 .360 .400 8.13 9.15 10.16 *Controlling Parameter JEDEC Equivalent: MS-030 Drawing No. C04-010 DS21939B-page 10  2005-2013 Microchip Technology Inc.

TC4426AM/TC4427AM/TC4428AM APPENDIX A: REVISION HISTORY Revision A (February 2005) • Original Release of this Document. Revision B (January 2013) Added a note to each package outline drawing.  2005-2013 Microchip Technology Inc. DS21939B-page 11

TC4426AM/TC4427AM/TC4428AM NOTES: l DS21939B-page 12  2005-2013 Microchip Technology Inc.

TC4426AM/TC4427AM/TC4428AM PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. XX Examples: a) TC4426AMJA: 1.5A Dual MOSFET Device and Temperature Package driver, Inverting, Range -55°C to +125°C 8LD CERDIP package. Device and TC4426AM: 1.5A Dual MOSFET Driver, Inverting, a) TC4427AMJA: 1.5A Dual MOSFET Temperature Range: -55°C to +125°C driver, Non-Inverting TC4427AM: 1.5A Dual MOSFET Driver, Non-Inverting, -55°C to +125°C -55°C to +125°C TC4428AM: 1.5A Dual MOSFET Driver, Complementary, 8LD CERDIP package. -55°C to +125°C a) TC4428AMJA: 1.5A Dual MOSFET driver, Complementary, Package: JA = Ceramic Dual In-line (300 mil Body), 8-lead -55°C to +125°C 8LD CERDIP package.  2005-2013 Microchip Technology Inc. DS21939B-page 13

TC4426AM/TC4427AM/TC4428AM NOTES: DS21939B-page 14  2005-2013 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device Trademarks applications and the like is provided only for your convenience The Microchip name and logo, the Microchip logo, dsPIC, and may be superseded by updates. It is your responsibility to FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, ensure that your application meets with your specifications. PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash MICROCHIP MAKES NO REPRESENTATIONS OR and UNI/O are registered trademarks of Microchip Technology WARRANTIES OF ANY KIND WHETHER EXPRESS OR Incorporated in the U.S.A. and other countries. IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, INCLUDING BUT NOT LIMITED TO ITS CONDITION, MTP, SEEVAL and The Embedded Control Solutions QUALITY, PERFORMANCE, MERCHANTABILITY OR Company are registered trademarks of Microchip Technology FITNESS FOR PURPOSE. Microchip disclaims all liability Incorporated in the U.S.A. arising from this information and its use. Use of Microchip Silicon Storage Technology is a registered trademark of devices in life support and/or safety applications is entirely at Microchip Technology Inc. in other countries. the buyer’s risk, and the buyer agrees to defend, indemnify and Analog-for-the-Digital Age, Application Maestro, BodyCom, hold harmless Microchip from any and all damages, claims, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, suits, or expenses resulting from such use. No licenses are dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, conveyed, implicitly or otherwise, under any Microchip ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial intellectual property rights. Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2005-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620769201 QUALITY MANAGEMENT SYSTEM Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and CERTIFIED BY DNV Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures == ISO/TS 16949 == are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.  2005-2013 Microchip Technology Inc. DS21939B-page 15

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