TC4421/TC4422 9A High-Speed MOSFET Drivers Features General Description • High Peak Output Current: 9A The TC4421/TC4422 are high-current buffer/drivers (cid:127) Wide Input Supply Voltage Operating Range: capable of driving large MOSFETs and IGBTs. - 4.5V to 18V These devices are essentially immune to any form of (cid:127) High Continuous Output Current: 2A Max upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within (cid:127) Fast Rise and Fall Times: their power and voltage ratings. These parts are not - 30ns with 4,700pF Load subject to damage or improper operation when up to - 180ns with 47,000pF Load 5V of ground bounce is present on their ground termi- (cid:127) Short Propagation Delays: 30ns (typ) nals. They can accept, without damage or logic upset, (cid:127) Low Supply Current: more than 1A inductive current of either polarity being - With Logic ‘1’ Input – 200µA (typ) forced back into their outputs. In addition, all terminals are fully protected against up to 4kV of electrostatic - With Logic ‘0’ Input – 55µA (typ) discharge. (cid:127) Low Output Impedance: 1.4 Ω (typ) The TC4421/TC4422 inputs may be driven directly (cid:127) Latch-Up Protected: Will Withstand 1.5A Output from either TTL or CMOS (3V to 18V). In addition, Reverse Current 300mV of hysteresis is built into the input, providing (cid:127) Input Will Withstand Negative Inputs Up To 5V noise immunity and allowing the device to be driven (cid:127) Pin-Compatible with the TC4420/TC4429 from slowly rising or falling waveforms. 6A MOSFET Driver With both surface-mount and pin-through-hole (cid:127) Space-saving 8-Pin 6x5 DFN Package packages and four operating temperature range offer- ings, the TC4421/22 family of 9A MOSFET drivers fit Applications into most any application where high gate/line (cid:127) Line Drivers for Extra Heavily-Loaded Lines capacitance drive is required. (cid:127) Pulse Generators (cid:127) Driving the Largest MOSFETs and IGBTs (cid:127) Local Power ON/OFF Switch (cid:127) Motor and Solenoid Driver Package Types(1) 8-Pin PDIP/ TC4421 TC4422 8-Pin DFN(2) TC4421 TC4422 5-Pin TO-220 SOIC Tab is VDD 1 8 VDD VDD VDD 1 8 VDD VDD Common INPUT 2 TC4421 7 OUTPUT OUTPUT INPUT 2 TC4421 7 OUTPUT OUTPUT to VDD TC4422 NC 3 TC4422 6 OUTPUT OUTPUT NC 3 6 OUTPUT OUTPUT TC4421 GND 4 5 GND GND TC4422 GND 4 5 GND GND Note1: Duplicate pins must both be connected for proper operation. PUTGNDVDDGNDTPUT 2: Exposed pad of the DFN package is electrically isolated. N U I O  2004 Microchip Technology Inc. DS21420D-page 1

TC4421/TC4422 Functional Block Diagram V DD TC4421 Inverting 200µA 300mV Output TC4422 Input Non-Inverting 4.7V GND Effective Input C = 25pF DS21420D-page 2  2004 Microchip Technology Inc.

TC4421/TC4422 1.0 ELECTRICAL † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These CHARACTERISTICS are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the Absolute Maximum Ratings† operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for Supply Voltage.....................................................+20V extended periods may affect device reliability. Input Voltage....................(V + 0.3V) to (GND – 5V) DD Input Current (V > V )...................................50mA IN DD Package Power Dissipation (T ≤ 70°C) A 5-Pin TO-220....................................................1.6W DFN.............................................................. Note2 PDIP............................................................730mW SOIC............................................................750mW Package Power Dissipation (T ≤ 25°C) A 5-Pin TO-220 (With Heatsink)........................12.5W Thermal Impedances (To Case) 5-Pin TO-220 RθJ-C......................................10°C/W DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, T = +25°C with 4.5V ≤ V ≤ 18V. A DD Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage V 2.4 1.8 — V IH Logic ‘0’, Low Input Voltage V — 1.3 0.8 V IL Input Current I –10 — +10 µA 0V ≤ V ≤ V IN IN DD Output High Output Voltage V V – 0.025 — — V DC TEST OH DD Low Output Voltage V — — 0.025 V DC TEST OL Output Resistance, High R — 1.4 — Ω I = 10mA, V = 18V OH OUT DD Output Resistance, Low R — 0.9 1.7 Ω I = 10mA, V = 18V OL OUT DD Peak Output Current I — 9.0 — A V = 18V PK DD Continuous Output Current I 2 — — A 10V ≤ V ≤ 18V, T = +25°C DC DD A (TC4421/TC4422 CAT only) (Note3) Latch-Up Protection I — >1.5 — A Duty cycle ≤ 2%, t ≤ 300µsec REV Withstand Reverse Current Switching Time (Note1) Rise Time t — 60 75 ns Figure4-1, C = 10,000pF R L Fall Time t — 60 75 ns Figure4-1, C = 10,000pF F L Delay Time t — 30 60 ns Figure4-1 D1 Delay Time t — 33 60 ns Figure4-1 D2 Power Supply Power Supply Current I — 0.2 1.5 mA V = 3V S IN — 55 150 µA V = 0V IN Operating Input Voltage V 4.5 — 18 V DD Note 1: Switching times ensured by design. 2: Package power dissipation is dependent on the copper pad area on the PCB. 3: Tested during characterization, not production tested.  2004 Microchip Technology Inc. DS21420D-page 3

TC4421/TC4422 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ V ≤ 18V. DD Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage V 2.4 — — V IH Logic ‘0’, Low Input Voltage V — — 0.8 V IL Input Current I –10 — +10 µA 0V ≤ V ≤ V IN IN DD Output High Output Voltage V V – 0.025 — — V DC TEST OH DD Low Output Voltage V — — 0.025 V DC TEST OL Output Resistance, High R — 2.4 3.6 Ω I = 10mA, V = 18V OH OUT DD Output Resistance, Low R — 1.8 2.7 Ω I = 10mA, V = 18V OL OUT DD Switching Time (Note1) Rise Time t — 60 120 ns Figure4-1, C = 10,000pF R L Fall Time t — 60 120 ns Figure4-1, C = 10,000pF F L Delay Time t — 50 80 ns Figure4-1 D1 Delay Time t — 65 80 ns Figure4-1 D2 Power Supply Power Supply Current I — — 3 mA V = 3V S IN — — 0.2 V = 0V IN Operating Input Voltage V 4.5 — 18 V DD Note 1: Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V ≤ 18V. DD Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (C) T 0 — +70 °C A Specified Temperature Range (E) T –40 — +85 °C A Specified Temperature Range (V) T –40 — +125 °C A Maximum Junction Temperature T — — +150 °C J Storage Temperature Range T –65 — +150 °C A Package Thermal Resistances Thermal Resistance, 5L-TO-220 θ — 71 — °C/W JA Thermal Resistance, 8L-6x5 DFN θ — 33.2 — °C/W Typical 4-layer board with JA vias to ground plane Thermal Resistance, 8L-PDIP θ — 125 — °C/W JA Thermal Resistance, 8L-SOIC θ — 120 — °C/W JA DS21420D-page 4  2004 Microchip Technology Inc.

TC4421/TC4422 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, T = +25°C with 4.5V ≤ V ≤ 18V. A DD 220 180 200 160 180 22,000 pF 140 160 22,000 pF (nsec)SE 111420000 10,000 pF (nsec)LL11820000 tRI 80 4700 pF tFA 60 10,000 pF 60 4700 pF 40 40 1000 pF 20 20 1000 pF 0 0 4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18 VDD (V) VDD (V) FIGURE 2-1: Rise Time vs. Supply FIGURE 2-4: Fall Time vs. Supply Voltage. Voltage. 300 300 5V 5V 250 250 10V 10V 200 200 t (nsec)RISE 115000 15V t (nsec)FALL 115000 15V 50 50 0 0 100 1000 10,000 100,000 100 1000 10,000 100,000 CLOAD (pF) CLOAD (pF) FIGURE 2-2: Rise Time vs. Capacitive FIGURE 2-5: Fall Time vs. Capacitive Load. Load. 90 50 CLOAD = 10,000 pF CLOAD = 1000 pF 80 VDD = 15V 45 70 ec) ec)40 s s Time (n6500 tRISE Time (n35 tD2 tD1 40 tFALL 30 30 25 -40 0 40 80 120 4 6 8 10 12 14 16 18 TA (°C) VDD (V) FIGURE 2-3: Rise and Fall Times vs. FIGURE 2-6: Propagation Delay vs. Temperature. Supply Voltage.  2004 Microchip Technology Inc. DS21420D-page 5

TC4421/TC4422 Note: Unless otherwise indicated, T = +25°C with 4.5V ≤ V ≤ 18V. A DD 220 180 200 VDD = 18V 160 VDD = 18V 47,000 pF 22,000 pF 180 2 MHz 140 160 10,000 pF A) 140 A) 120 (mY 120 1.125 MHz 63.2 kHz (mY 100 PPL 100 PPL 80 0.1 µF ISU 80 632 kHz ISU 60 60 40 20 kHz 40 4700 pF 200 kHz 20 20 470 pF 0 0 100 1000 10,000 100,000 10 100 1000 CLOAD (pF) Frequency (kHz) FIGURE 2-7: Supply Current vs. FIGURE 2-10: Supply Current vs. Capacitive Load (V = 18V). Frequency (V = 18V). DD DD 180 180 160 VDD = 12V 160 VDD = 12V 22,000 pF 10,000 pF 140 140 47,000 pF A) 120 A) 120 (mPLY 10800 2 MHz 63.2 kHz (mPLY10800 P P ISU 60 1.125 MHz ISU 60 0.1 µF 4700 pF 40 632 kHz 40 20 kHz 20 200 kHz 20 470 pF 0 0 100 1000 10,000 100,000 10 100 1000 CLOAD (pF) Frequency (kHz) FIGURE 2-8: Supply Current vs. FIGURE 2-11: Supply Current vs. Capacitive Load (V = 12V). Frequency (V = 12V). DD DD 100 120 90 VDD = 6V 200 kHz VDD = 6V 47,000 pF 100 80 22,000 pF 70 mA) 60 mA) 80 4700 pF 10,000 pF (Y 50 (Y 60 PL PL UP 40 63.2 kHz UP IS 30 2 MHz IS 40 632 kHz 0.1 µF 20 20 kHz 20 10 470 pF 0 0 100 1000 10,000 100,000 1100 110000 11000000 CLOAD (pF) Frequency (kHz) FIGURE 2-9: Supply Current vs. FIGURE 2-12: Supply Current vs. Capactive Load (V = 6V). Frequency (V = 6V). DD DD DS21420D-page 6  2004 Microchip Technology Inc.

TC4421/TC4422 Note: Unless otherwise indicated, T = +25°C with 4.5V ≤ V ≤ 18V. A DD 120 50 110 VDD = 10V VDD = 18V 100 CLOAD = 10,000 pF 45 CLOAD = 10,000 pF VIN = 5V 90 Time (nsec) 8765400000 tD2 Time (nsec) 433050 tD2 tD1 30 tD1 20 25 10 0 20 1 2 3 4 5 6 7 8 9 10 –60 –40 –20 0 20 40 60 80 100 120 Input Amplitude (V) TA (°C) FIGURE 2-13: Propagation Delay vs. Input FIGURE 2-16: Propagation Delay vs. Amplitude. Temperature. 10-6 103 VDD = 18V A) µ sec 10-7 (ENT Input = 1 A(cid:127) SC E QUI 102 I Input = 0 10-8 4 6 8 10 12 14 16 18 -60 -40 -20 0 20 40 60 80 100 120 VDD (V) TJ (°C) NOTE: The values on this graph represent the loss seen by the driver during a complete cycle. For the loss FIGURE 2-17: Quiescent Supply Current in a single transition, divide the stated value by 2. vs. Temperature. FIGURE 2-14: Crossover Energy vs. Supply Voltage. 6 6 5.5 5.5 5 5 4.5 TJ = 150°C 4.5 ΩR ()DS(ON) 32..4535 Ω ()DS(ON) 3.453 TJ = 150°C R 2.5 2 TJ = 25°C 2 1.5 1.5 1 1 TJ = 25°C 0.5 4 6 8 10 12 14 16 18 0.5 4 6 8 10 12 14 16 18 VDD (V) VDD (V) FIGURE 2-15: High-State Output FIGURE 2-18: Low-State Output Resistance vs. Supply Voltage. Resistance vs. Supply Voltage.  2004 Microchip Technology Inc. DS21420D-page 7

TC4421/TC4422 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. Pin No. Pin No. 8-Pin PDIP, Symbol Description 8-Pin DFN 5-Pin TO-220 SOIC 1 1 — V Supply input, 4.5V to 18V DD 2 2 1 INPUT Control input, TTL/CMOS compatible input 3 3 — NC No connection 4 4 2 GND Ground 5 5 4 GND Ground 6 6 5 OUTPUT CMOS push-pull output 7 7 — OUTPUT CMOS push-pull output 8 8 3 V Supply input, 4.5V to 18V DD — PAD — NC Exposed metal pad — — TAB V Metal tab is at the V potential DD DD 3.1 Supply Input (V ) 3.3 CMOS Push-Pull Output DD The V input is the bias supply for the MOSFET driver The MOSFET driver output is a low-impedance, DD and is rated for 4.5V to 18V with respect to the ground CMOS, push-pull style output capable of driving a pin. The V input should be bypassed to ground with capacitive load with 9.0A peak currents. The MOSFET DD a local ceramic capacitor. The value of the capacitor driver output is capable of withstanding 1.5A peak should be chosen based on the capacitive load that is reverse currents of either polarity. being driven. A minimum value of 1.0µF is suggested. 3.4 Ground 3.2 Control Input The ground pins are the return path for the bias current The MOSFET driver input is a high-impedance, and for the high peak currents that discharge the load TTL/CMOS compatible input. The input also has capacitor. The ground pins should be tied into a ground 300mV of hysteresis between the high and low plane or have very short traces to the bias supply thresholds that prevents output glitching even when the source return. rise and fall time of the input signal is very slow. 3.5 Exposed Metal Pad The exposed metal pad of the 6x5 DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat removal from the package. DS21420D-page 8  2004 Microchip Technology Inc.

TC4421/TC4422 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 18V 0V 10% tD1 tD2 t t F R 4.7µF +18V 90% 90% 1 8 Output 10% 10% 0.1µF 0.1µF 0V Inverting Driver 2 6 Input Output TC4421 7 C = 10,000pF +5V L 90% Input 4 5 10% 0V +18V tD190% tD2 90% Input: 100kHz, Output tR tF square wave, t = t ≤ 10nsec 0V 10% 10% RISE FALL Non-Inverting Driver TC4422 Note: Pinout shown is for the DFN, PDIP and SOIC packages. FIGURE 4-1: Switching Time Test Circuits.  2004 Microchip Technology Inc. DS21420D-page 9

TC4421/TC4422 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 5-Lead TO-220 Example: XXXXXXXXX TC4421CAT XXXXXXXXX XXXXXXXXX YYWWNNN 0420256 8-Lead DFN Example: XXXXXXX TC4421 XXXXXXX EMF XXYYWW 0420 NNN 256 8-Lead PDIP (300 mil) Example: XXXXXXXX TC4421 XXXXXNNN CPA256 YYWW 0420 8-Lead SOIC (208 mil) Example: XXXXXXXX GTC4421 XXXXXXXX ESM YYWWNNN 0420256 Legend: XX...X Customer specific information* YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard OTP marking consists of Microchip part number, year code, week code, and traceability code. DS21420D-page 10  2004 Microchip Technology Inc.

TC4421/TC4422 5-Lead Plastic Transistor Outline (AT) (TO-220) L H1 Q b e3 e1 E e EJECTOR PIN ØP a(5X) C1 A J1 F D Units INCHES* MILLIMETERS Dimension Limits MIN MAX MIN MAX Lead Pitch e .060 .072 1.52 1.83 Overall Lead Centers e1 .263 .273 6.68 6.93 Space Between Leads e3 .030 .040 0.76 1.02 Overall Height A .160 .190 4.06 4.83 Overall Width E .385 .415 9.78 10.54 Overall Length D .560 .590 14.22 14.99 Flag Length H1 .234 .258 5.94 6.55 Flag Thickness F .045 .055 1.14 1.40 Through Hole Center Q .103 .113 2.62 2.87 Through Hole Diameter P .146 .156 3.71 3.96 Lead Length L .540 .560 13.72 14.22 Base to Bottom of Lead J1 .090 .115 2.29 2.92 Lead Thickness C1 .014 .022 0.36 0.56 Lead Width b .025 .040 0.64 1.02 Mold Draft Angle a 3° 7° 3° 7° *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC equivalent: TO-220 Drawing No. C04-036  2004 Microchip Technology Inc. DS21420D-page 11

TC4421/TC4422 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated DS21420D-page 12  2004 Microchip Technology Inc.

TC4421/TC4422 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A A2 L c A1 β B1 p eB B Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .100 2.54 Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32 Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68 Base to Seating Plane A1 .015 0.38 Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26 Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60 Overall Length D .360 .373 .385 9.14 9.46 9.78 Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43 Lead Thickness c .008 .012 .015 0.20 0.29 0.38 Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78 Lower Lead Width B .014 .018 .022 0.36 0.46 0.56 Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92 Mold Draft Angle Top α 5 10 15 5 10 15 Mold Draft Angle Bottom β 5 10 15 5 10 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018  2004 Microchip Technology Inc. DS21420D-page 13

TC4421/TC4422 8-Lead Plastic Small Outline (SM) – Medium, 208 mil Body (SOIJ) (JEITA/EIAJ Standard, Formerly called SOIC) E E1 p D 2 n 1 B α c A A2 φ A1 β L Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .050 1.27 Overall Height A .070 .075 .080 1.78 1.97 2.03 Molded Package Thickness A2 .069 .074 .078 1.75 1.88 1.98 Standoff A1 .002 .005 .010 0.05 0.13 0.25 Overall Width E .300 .313 .325 7.62 7.95 8.26 Molded Package Width E1 .201 .208 .212 5.11 5.28 5.38 Overall Length D .202 .205 .210 5.13 5.21 5.33 Foot Length L .020 .025 .030 0.51 0.64 0.76 Foot Angle φ 0 4 8 0 4 8 Lead Thickness c .008 .009 .010 0.20 0.23 0.25 Lead Width B .014 .017 .020 0.36 0.43 0.51 Mold Draft Angle Top α 0 12 15 0 12 15 Mold Draft Angle Bottom β 0 12 15 0 12 15 *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. Drawing No. C04-056 DS21420D-page 14  2004 Microchip Technology Inc.

TC4421/TC4422 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X XX XXX X Examples: a) TC4421CAT: 9A High-Speed Inverting Device Temperature Package Tape & Reel PB Free MOSFET Driver, Range TO-220 package, 0°C to +70°C. b) TC4421ESMG:9A High-Speed Inverting Device: TC4421: 9A High-Speed MOSFET Driver, Inverting TC4422: 9A High-Speed MOSFET Driver, Non-Inverting MOSFET Driver, PB Free SOIC package, -40°C to +85°C. Temperature Range: C = 0°C to +70°C (PDIP and TO-220 Only) c) TC4421VMF: 9A High-Speed Inverting E = -40°C to +85°C V = -40°C to +125°C MOSFET Driver, DFN package, -40°C to +125°C. Package: AT = TO-220, 5-lead (C-Temp Only) MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead a) TC4422VPA: 9A High-Speed MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead Non-Inverting MOSFET (Tape and Reel) Driver, PDIP package, PA = Plastic DIP (300 mil Body), 8-lead -40°C to +125°C. SM = Plastic SOIC (208 mil Body), 8-lead SM713= Plastic SOIC (208 mil Body), 8-lead b) TC4422EPA: 9A High-Speed (Tape and Reel) Non-Inverting MOSFET Driver, PDIP package, PB Free G = Lead-Free device = Blank -40°C to +85°C. c) TC4422EMF: 9A High-Speed * Available on selected packages. Contact your local sales Inverting MOSFET Driver, representative for availability DFN package, -40°C to +85°C. Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 3. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2004 Microchip Technology Inc. DS21420D-page 15

TC4421/TC4422 NOTES: DS21420D-page 16  2004 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices: (cid:127) Microchip products meet the specification contained in their particular Microchip Data Sheet. (cid:127) Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. (cid:127) There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. (cid:127) Microchip is willing to work with the customer who is concerned about the integrity of their code. (cid:127) Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device Trademarks applications and the like is intended through suggestion only The Microchip name and logo, the Microchip logo, Accuron, and may be superseded by updates. It is your responsibility to dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, ensure that your application meets with your specifications. PICSTART, PROMATE, PowerSmart, rfPIC, and No representation or warranty is given and no liability is SmartShunt are registered trademarks of Microchip assumed by Microchip Technology Incorporated with respect Technology Incorporated in the U.S.A. and other countries. to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL, use or otherwise. Use of Microchip’s products as critical SmartSensor and The Embedded Control Solutions Company components in life support systems is not authorized except are registered trademarks of Microchip Technology with express written approval by Microchip. No licenses are Incorporated in the U.S.A. conveyed, implicitly or otherwise, under any intellectual Analog-for-the-Digital Age, Application Maestro, dsPICDEM, property rights. dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2004, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.  2004 Microchip Technology Inc. DS21420D-page 17

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