TC1014/TC1015/TC1185 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass Features: General Description • Low Supply Current (50µA, typical) The TC1014/TC1015/TC1185 are high accuracy • Low Dropout Voltage (typically ±0.5%) CMOS upgrades for older (bipolar) Low Dropout Regulators (LDOs) such as the LP2980. • Choice of 50mA (TC1014), 100mA (TC1015) Designed specifically for battery-operated systems, the and 150mA (TC1185) Output devices’ CMOS construction eliminates wasted ground • High Output Voltage Accuracy current, significantly extending battery life. Total supply • Standard or Custom Output Voltages current is typically 50µA at full load (20 to 60 times • Power-Saving Shutdown Mode lower than in bipolar regulators). • Reference Bypass Input for Ultra Low-Noise The devices’ key features include ultra low-noise Operation operation (plus optional Bypass input), fast response to • Overcurrent and Overtemperature Protection step changes in load, and very low dropout voltage, • Space-Saving 5-Pin SOT-23 Package typically 85mV (TC1014), 180mV (TC1015), and 270mV (TC1185) at full-load. Supply current is • Pin-Compatible Upgrades for Bipolar Regulators reduced to 0.5µA (max) and V falls to zero when • Standard Output Voltage Options: OUT the shutdown input is low. The devices incorporate both - 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, overtemperature and overcurrent protection. 3.3V, 3.6V, 4.0V, 5.0V The TC1014/TC1015/TC1185 are stable with an output Applications: capacitor of only 1µF and have a maximum output current of 50mA, 100mA and 150mA, respectively. • Battery-Operated Systems For higher output current regulators, please see the • Portable Computers TC1107 (DS21356), TC1108 (DS21357), TC1173 • Medical Instruments (DS21362) (I = 300mA) data sheets. OUT • Instrumentation Package Type • Cellular/GSM/PHS Phones • Linear Post-Regulator for SMPS 5-Pin SOT-23 • Pagers V Bypass OUT Typical Application 5 4 1 5 V V V V IN IN OUT OUT TC1014 TC1014 + 1µF TC1015 TC1015 TC1185 TC1185 2 GND 1 2 3 V GND SHDN IN 3 4 SHDN Bypass 470pF Reference Bypass Cap (Optional) Shutdown Control (from Power Control Logic) © 2007 Microchip Technology Inc. DS21335E-page 1

TC1014/TC1015/TC1185 1.0 ELECTRICAL † Notice: Stresses above those listed under "Absolute CHARACTERISTICS Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions Absolute Maximum Ratings† above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Input Voltage.........................................................6.5V Maximum Rating conditions for extended periods may Output Voltage...........................(-0.3V) to (V + 0.3V) IN affect device reliability. Power Dissipation................Internally Limited (Note7) Maximum Voltage on Any Pin ........V +0.3V to -0.3V IN Operating Temperature Range......-40°C < T < 125°C J Storage Temperature..........................-65°C to +150°C TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS Electrical Specifications: V = V + 1V, I = 100µA, C = 1.0µF, SHDN > V , T = +25°C, unless otherwise noted. IN R L L IH A Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameter Symbol Min Typ Max Units Device Test Conditions Input Operating Voltage V 2.7 — 6.0 V — Note1 IN Maximum Output Current I 50 — — mA TC1014 OUTMAX 100 — — TC1015 150 — — TC1185 Output Voltage V V – 2.5% V ±0.5% V + 2.5% V — Note2 OUT R R R V Temperature Coefficient TCV — 20 — ppm/°C — Note3 OUT OUT — 40 — Line Regulation ΔV / — 0.05 0c.35 % — (V + 1V) ≤ V ≤ 6V OUT R IN ΔV IN Load Regulation ΔV / — 0.5 2 % TC1014; TC1015 I = 0.1mA to I OUT L OUTMAX VOUT — 0.5 3 TC1185 IL = 0.1mA to IOUTMAX (Note4) Dropout Voltage V -V — 2 — mV — I = 100µA IN OUT L — 65 — — I = 20mA L — 85 120 — I = 50mA L — 180 250 TC1015; TC1185 I = 100mA L — 270 400 TC1185 I = 150mA (Note5) L Supply Current (Note 8) I — 50 80 µA — SHDN = V , I = 0 IN IH L Shutdown Supply Current I — 0.05 0.5 µA — SHDN = 0V INSD Power Supply Rejection PSRR — 64 — dB — FRE ≤ 1kHz Ratio Output Short Circuit Current I — 300 450 mA — V = 0V OUTSC OUT Thermal Regulation ΔV / — 0.04 — V/W — Notes6,7 OUT ΔP D Thermal Shutdown Die T — 160 — °C — SD Temperature Thermal Shutdown ΔT — 10 — °C — SD Hysteresis Note 1: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT. 2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. 3: TC VOUT = (VOUTMAX – VOUTMIN)x 106 VOUT x ΔT 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10ms. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section5.0 “Thermal Considerations” for more details. 8: Apply for Junction Temperatures of -40°C to +85°C. DS21335E-page 2 © 2007 Microchip Technology Inc.

TC1014/TC1015/TC1185 TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Specifications: V = V + 1V, I = 100µA, C = 1.0µF, SHDN > V , T = +25°C, unless otherwise noted. IN R L L IH A Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameter Symbol Min Typ Max Units Device Test Conditions Output Noise eN — 600 — nV/√Hz — IL = IOUTMAX, F = 10kHz 470pF from Bypass to GND SHDN Input High Threshold V 45 — — %V — V = 2.5V to 6.5V IH IN IN SHDN Input Low Threshold V — — 15 %V — V = 2.5V to 6.5V IL IN IN Note 1: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT. 2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. 3: TC VOUT = (VOUTMAX – VOUTMIN)x 106 VOUT x ΔT 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10ms. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section5.0 “Thermal Considerations” for more details. 8: Apply for Junction Temperatures of -40°C to +85°C. TEMPERATURE CHARACTERISTICS Electrical Specifications: V = V + 1V, I = 100µA, C = 1.0µF, SHDN > V , T = +25°C, unless otherwise noted. IN R L L IH A Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameters Sym Min Typ Max Units Conditions Temperature Ranges: Extended Temperature Range T -40 — +125 °C A Operating Temperature Range T -40 — +125 °C A Storage Temperature Range T -65 — +150 °C A Thermal Package Resistances: Thermal Resistance, 5L-SOT-23 θ — 256 — °C/W JA © 2007 Microchip Technology Inc. DS21335E-page 3

TC1014/TC1015/TC1185 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Dropout Voltage vs. Temperature Dropout Voltage vs. Temperature 0.020 0.100 0.018 VOUT = 3.3V 0.090 VOUT = 3.3V GE (V) 00..001146 ILOAD = 10mA GE (V) 00..007800 ILOAD = 50mA OUT VOLTA 000...000011802 OUT VOLTA 000...000456000 OP 0.006 OP 0.030 DR 00..000024 CCIONU =T 1=µ 1FµF DR 00..001200 CCIONU =T 1=µ 1FµF 0.000 0.000 -40 -20 0 20 50 70 125 -40 -20 0 20 50 70 125 TEMPERATURE (°C) TEMPERATURE (°C) FIGURE 2-1: Dropout Voltage vs. FIGURE 2-4: Dropout Voltage vs. Temperature. Temperature. Dropout Voltage vs. Temperature Dropout Voltage vs. Temperature 0.200 0.300 0.180 VOUT = 3.3V VOUT = 3.3V V)0.160 ILOAD = 100mA V) 0.250 ILOAD = 150mA GE (0.140 GE ( 0.200 A A T0.120 T L L VO0.100 VO 0.150 UT 0.080 UT O O 0.100 P0.060 P O O DR00..002400 CCIONU =T 1=µ 1FµF DR 00..000500 CCIONU =T 1=µ 1FµF 0.000 -40 -20 0 20 50 70 125 -40 -20 0 20 50 70 125 T E MPERA T U R E (°C) TEMPERATURE (°C) FIGURE 2-2: Dropout Voltage vs. FIGURE 2-5: Dropout Voltage vs. Temperature. Temperature. Ground Current vs. VIN Ground Current vs. VIN 90 90 80 VIL OOUATD == 31.03mVA 80 VILOOUATD == 31.030VmA µA) 70 A) 70 GND CURRENT ( 1234560000000 CCIONU =T 1=µ 1FµF µGND CURRENT ( 123456000000 CCIONU =T 1=µ 1FµF 00 00..55 1111..55 22 22..55 33 33..55 44 44..55 55 55..55 66 66..55 77 77..55 0 V I N ( V) 0 0.5 11 11..55 22 22..55 33 33..55 44 44..55 55 55..55 66 66..55 77 77..55 VIN (V) FIGURE 2-3: Ground Current vs. Input FIGURE 2-6: Ground Current vs. Input Voltage (V ). Voltage (V ). IN IN DS21335E-page 4 © 2007 Microchip Technology Inc.

TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Ground Current vs. VIN VOUT vs. VIN 80 3.5 VOUT = 3.3V VOUT = 3.3V 70 ILOAD = 150mA 3 ILOAD = 0 A) 60 2.5 µ NT ( 50 V) 2 URRE 40 V( OUT1.5 C 30 ND 1 G 20 10 CCIONU =T 1=µ 1FµF 0.50 CCIONU =T 1=µ 1FµF 0 0 0.5 1 11..55 22 22..55 33 33..55 44 44..55 55 55..55 66 66..55 77 77..55 00 00..55 11 11.5.5 22 22..55 33 33..55 44 44..55 55 5 5..55 66 66..55 77 VIN (V) VIN (V) FIGURE 2-7: Ground Current vs. Input FIGURE 2-10: Output Voltage (V ) vs. OUT Voltage (V ). Input Voltage (V ). IN IN VOUT vs. VIN Output Voltage vs. Temperature 3.5 3.320 3.0 IVILLOOOUAATDD === 311.00300VmmAA 3.315 VILOOUATD == 31.03mVA 3.310 2.5 3.305 V(V) OUT12..50 V (V)OUT33..239050 3.290 1.0 3.285 CIN = 1µF 00..05 CCIONU =T 1=µ 1FµF 33..227850 CVIONU =T 4=. 31VµF 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 -40 -20 -10 0 20 40 85 125 VIN (V) TEMPERATURE (°C) FIGURE 2-8: Output Voltage (V ) vs. FIGURE 2-11: Output Voltage (V ) vs. OUT OUT Input Voltage (V ). Temperature. IN Output Voltage vs. Temperature 3.290 3.288 VILOOUATD == 31.530VmA 3.286 3.284 V) (UT3.282 O V 3.280 3.278 CIN = 1µF 3.276 COUT = 1µF VIN = 4.3V 3.274 -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) FIGURE 2-9: Output Voltage (V ) vs. OUT Temperature. © 2007 Microchip Technology Inc. DS21335E-page 5

TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Output Voltage vs. Temperature Output Voltage vs. Temperature 5.025 4.994 5.020 VILOOUATD == 51V0mA 44..999902 VILOOUATD == 51V50mA 5.015 4.988 V (V)OUT 555...000001050 V (V)OUT444...999888246 44..999905 CCIONU =T 1=µ 1FµF 44..997880 CCIONU =T 1=µ 1FµF VIN = 6V 4.976 VIN = 6V 4.985 4.974 -40 -20 -10 0 20 40 85 125 -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) TEMPERATURE (°C) FIGURE 2-12: Output Voltage (V ) vs. FIGURE 2-14: Output Voltage (V ) vs. OUT OUT Temperature. Temperature. Temperature vs. Quiescent C urrent Temperature vs. Quiescent Current 70 80 µNT (A) 5600 VILOOUATD == 51V0mA μT (A) 567000 VILOOUATD == 51V50mA E 40 N RR RE 40 CU 30 UR 30 GND 12000 CVCIIONNU ==T 61=Vµ 1FµF GND C 12000 CCVIIONNU ==T 61=Vμ 1FμF -40 -20 -10 0 20 40 85 125 -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) TEMPERATURE (°C) FIGURE 2-13: I vs. Temperature. FIGURE 2-15: I vs. Temperature. GND GND Output Noise vs. Frequency Stability Region vs. Load Current Power Supply Rejection Ratio 10.0 RCLOOUATD = =1 μ5F0Ω 1000 CtoO 1U0Tμ =F 1μF --3350 IVOINUDT C= =1 04mVA μ√NOISE (V/Hz) 1.0 CCIBNY =P 1=μ 0F ΩCESR()OUT 101001 SSttaabbllee RReeggiioonn PSRR (dB) ------445566050550 VVCCIOIONNUUA =TTC 0= == 3 11Vμ0F0mVp-p 0.1 0.1 -70 -75 0.0 0.01 -80 0.01K 0.1K 1K 10K 100K 1000K 0 10 20 30 40 50 60 70 80 90100 0.01K 0.1K 1K 10K 100K 1000K FREQUENCY (Hz) LOAD CURRENT (mA) FREQUENCY (Hz) FIGURE 2-16: AC Characteristics. DS21335E-page 6 © 2007 Microchip Technology Inc.

TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Measure Rise Time of 3.3V LDO With Bypass Capacitor Measure Rise Time of 3.3V LDO Without Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Rise Time = 448μS VIN = 4.3V, Temp = 25°C, Rise Time = 184μS VSHDN VSHDN VOUT VOUT FIGURE 2-17: Measure Rise Time of 3.3V FIGURE 2-19: Measure Rise Time of 3.3V with Bypass Capacitor. without Bypass Capacitor. Measure Fall Time of 3.3V LDO With Bypass Capacitor Measure Fall Time of 3.3V LDO Without Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Fall Time = 100μS VIN = 4.3V, Temp = 25°C, Fall Time = 52μS VSHDN VSHDN VOUT VOUT FIGURE 2-18: Measure Fall Time of 3.3V FIGURE 2-20: Measure Fall Time of 3.3V with Bypass Capacitor. without Bypass Capacitor. © 2007 Microchip Technology Inc. DS21335E-page 7

TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Measure Rise Time of 5.0V LDO With Bypass Capacitor Measure Rise Time of 5.0V LDO Without Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25°C, Rise Time = 390μS VIN = 6V, Temp = 25°C, Rise Time = 192μS VSHDN VSHDN VOUT VOUT FIGURE 2-21: Measure Rise Time of 5.0V FIGURE 2-23: Measure Rise Time of 5.0V with Bypass Capacitor. without Bypass Capacitor. Measure Fall Time of 5.0V LDO With Bypass Capacitor Measure Fall Time of 5.0V LDO Without Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25°C, Fall Time = 167μS VIN = 6V, Temp = 25°C, Fall Time = 88μS VSHDN VSHDN VOUT VOUT FIGURE 2-22: Measure Fall Time of 5.0V FIGURE 2-24: Measure Fall Time of 5.0V with Bypass Capacitor. without Bypass Capacitor. DS21335E-page 8 © 2007 Microchip Technology Inc.

TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Load Regulation of 3.3V LDO Load Regulation of 3.3V LDO Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF, Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25°C VIN = VOUT + 0.25V, Temp = 25°C ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled ILOAD ILOAD VOUT VOUT FIGURE 2-25: Load Regulation of 3.3V FIGURE 2-27: Load Regulation of 3.3V LDO. LDO. Load Regulation of 3.3V LDO Line Regulation of 3.3V LDO ConditionVsI:N C =IN V =O U1Tμ F+, 0C.O25UVT, =T 2e.m2μpF =, C25B°YCP = 470pF, Conditions: VIN = 4V, + 1V Squarewave @2.5kHz ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled ILOAD VIN VOUT VOUT CIN = 0μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled FIGURE 2-26: Load Regulation of 3.3V FIGURE 2-28: Load Regulation of 3.3V LDO. LDO. © 2007 Microchip Technology Inc. DS21335E-page 9

TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Thermal Shutdown Response of 5.0V LDO Line Regulation of 5.0V LDO Conditions: VIN = 6V, CIN = 0μF, COUT = 1μF Conditions: VIN = 6V, + 1V Squarewave @2.5kHz VIN VOUT VOUT CIN = 0μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled ILOAD was increased until temperature of die reached about 160°C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160°C. The regulator remains off until die temperature drops to approximately 150°C. FIGURE 2-29: Line Regulation of 5.0V FIGURE 2-30: Thermal Shutdown LDO. Response of 5.0V LDO. DS21335E-page 10 © 2007 Microchip Technology Inc.

TC1014/TC1015/TC1185 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. Symbol Description (5-Pin SOT-23) 1 V Unregulated supply input. IN 2 GND Ground terminal. 3 SHDN Shutdown control input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero and supply current is reduced to 0.5µA (maximum). 4 Bypass Reference bypass input. Connecting a 470pF to this input further reduces output noise. 5 V Regulated voltage output. OUT 3.1 Input Voltage (V ) 3.3 Shutdown (SHDN) IN Connect the V pin to the unregulated source The Shutdown input is used to turn the LDO on IN voltage. Like all low dropout linear regulators, low and off. When the SHDN pin is at a logic high source impedance is necessary for the stable level, the LDO output is enabled. When the operation of the LDO. The amount of capacitance SHDN pin is pulled to a logic low, the LDO output required to ensure low source impedance will is disabled. When disabled, the quiescent current depend on the proximity of the input source used by the LDO is less than 0.5µA max. capacitors or battery type. For most applications, 1.0µF of capacitance will ensure stable operation 3.4 Bypass of the LDO circuit. The type of capacitor used can Connecting a low-value ceramic capacitor to the be ceramic, tantalum or aluminum electrolytic. Bypass pin will further reduce output voltage The low Effective Series Resistance (ESR) char- noise and improve the PSRR performance of the acteristics of the ceramic will yield better noise LDO. While smaller and larger values can be and Power Supply Ripple Rejection (PSRR) used, these affect the speed at which the LDO performance at high frequency. output voltage rises when the input power is applied. The larger the bypass capacitor, the 3.2 Ground Terminal (GND) slower the output voltage will rise. Connect the ground pin to the input voltage return. For the optimal noise and PSRR 3.5 Output Voltage (V ) OUT performance, the GND pin of the LDO should be Connect the output load to V of the LDO. Also tied to a quiet circuit ground. For applications OUT connect one side of the LDO output capacitor as have switching or noisy inputs tie the GND pin to close as possible to the V pin. the return of the output capacitor. Ground planes OUT help lower inductance and voltage spikes caused by fast transient load currents and are recommended for applications that are subjected to fast load transients. © 2007 Microchip Technology Inc. DS21335E-page 11

TC1014/TC1015/TC1185 4.0 DETAILED DESCRIPTION 4.1 Bypass Input The TC1014, TC1015 and TC1185 are precision fixed A 470pF capacitor connected from the Bypass input to output voltage regulators (if an adjustable version is ground reduces noise present on the internal needed, see the TC1070, TC1071 and TC1187 data reference, which in turn, significantly reduces output sheet (DS21353). Unlike bipolar regulators, the noise. If output noise is not a concern, this input may be TC1014, TC1015 and TC1185 supply current does not left unconnected. Larger capacitor values may be increase with load current. In addition, the LDOs’ out- used, but results in a longer time period to rated output put voltage is stable using 1µF of capacitance over the voltage when power is initially applied. entire specified input voltage range and output current range. 4.2 Output Capacitor Figure4-1 shows a typical application circuit. The A 1µF (min) capacitor from V to ground is required. OUT regulator is enabled anytime the shutdown input The output capacitor should have an effective series (SHDN) is at or above V , and disabled when SHDN is IH resistance greater than 0.1Ω and less than 5Ω. A 1µF at or below V . SHDN may be controlled by a CMOS IL capacitor should be connected from V to GND if there IN logic gate or I/O port of a microcontroller. If the SHDN is more than 10 inches of wire between the regulator input is not required, it should be connected directly to and the AC filter capacitor, or if a battery is used as the the input supply. While in shutdown, the supply current power source. Aluminum electrolytic or tantalum decreases to 0.05µA (typical) and V falls to zero OUT capacitor types can be used. (Since many aluminum volts. electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for applications operating below -25°C.) When operating from sources other than batteries, supply-noise rejection and V V V + IN OUT OUT transient response can be improved by increasing the 1µF TC1014 + value of the input and output capacitors and employing + 1µF TC1015 passive filtering techniques. TC1185 Battery GND 4.3 Input Capacitor A 1µF capacitor should be connected from V to GND IN if there is more than 10 inches of wire between the SHDN Bypass regulator and this AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or 470pF Reference tantalum capacitors can be used (since many Bypass Cap aluminum electrolytic capacitors freeze at (Optional) approximately -30°C, solid tantalum is recommended Shutdown Control for applications operating below -25°C). When (to CMOS Logic or Tie operating from sources other than batteries, supply- to VIN if unused) noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering FIGURE 4-1: Typical Application Circuit. techniques. DS21335E-page 12 © 2007 Microchip Technology Inc.

TC1014/TC1015/TC1185 5.0 THERMAL CONSIDERATIONS Equation5-1 can be used in conjunction with Equation5-2 to ensure regulator thermal operation is within limits. For example: 5.1 Thermal Shutdown Given: Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160°C. VINMAX = 3.0V +10% The regulator remains off until the die temperature V = 2.7V – 2.5% OUTMIN drops to approximately 150°C. I = 40mA LOADMAX T = 125°C 5.2 Power Dissipation JMAX T = 55°C AMAX The amount of power the regulator dissipates is Find: primarily a function of input and output voltage, and output current. The following equation is used to 1. Actual power dissipation calculate worst-case actual power dissipation: 2. Maximum allowable dissipation Actual power dissipation: EQUATION 5-1: P ≈ (V – V )I D INMAX OUTMIN LOADMAX PD≈(VINMAX–VOUTMIN)ILOADMAX = [(3.0 x 1.1) – (2.7 x .975)]40 x 10–3 Where: = 26.7mW PD = Worst-case actual power Maximum allowable power dissipation: dissipation (T –T ) V = Maximum voltage on V P = ------J---M----A---X-------------A---M----A---X----- INMAX IN DMAX θ JA V = Minimum regulator output voltage OUTMIN (125–55) = ------------------------- I = Maximum output (load) current 220 LOADMAX = 318 mW The maximum allowable power dissipation (Equation5-2) is a function of the maximum ambient In this example, the TC1014 dissipates a maximum of temperature (T ), the maximum allowable die 26.7mW below the allowable limit of 318mW. In a AMAX temperature (T ) and the thermal resistance from similar manner, Equation5-1 and Equation5-2 can be JMAX junction-to-air (θ ). The 5-pin SOT-23 package has a used to calculate maximum current and/or input JA θ of approximately 220°C/Watt. voltage limits. JA EQUATION 5-2: 5.3 Layout Considerations P = (---T---J---M----A---X-----–----T----A---M----A---X----)- The primary path of heat conduction out of the package DMAX θ is via the package leads. Therefore, layouts having a JA ground plane, wide traces at the pads, and wide power Where all terms are previously defined. supply bus lines combine to lower θ and therefore JA increase the maximum allowable power dissipation limit. © 2007 Microchip Technology Inc. DS21335E-page 13

TC1014/TC1015/TC1185 6.0 PACKAGING INFORMATION TABLE 6-1: PART NUMBER CODE AND 6.1 Package Marking Information TEMPERATURE RANGE TC1014 TC1015 TC1185 (V) Code Code Code 1.8 AY BY NY 2.5 A1 B1 N1 1 2 3 4 2.6 NB BT NT 2.7 A2 B2 N2 2.8 AZ BZ NZ 2.85 A8 B8 N8 3.0 A3 B3 N3 3.3 A5 B5 N5 (cid:99)&(cid:100) represents part number code + temperature 3.6 A9 B9 N9 range and voltage (cid:101) represents year and 2-month period code 4.0 A0 B0 N0 5.0 A7 B7 N7 (cid:102) represents lot ID number 6.2 Taping Form Device User Direction of Feed Marking W, Width of PIN 1 Carrier Tape PIN 1 P,Pitch Standard Reel Component Reverse Reel Component Orientation Orientation Carrier Tape, Number of Components per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 5-Pin SOT-23 8 mm 4 mm 3000 7 in DS21335E-page 14 © 2007 Microchip Technology Inc.

TC1014/TC1015/TC1185 5-Lead Plastic Small Outline Transistor (OT) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging b N E E1 1 2 3 e e1 D A A2 c φ A1 L L1 Units MILLIMETERS Dimension Limits MIN NOM MAX Number of Pins N 5 Lead Pitch e 0.95 BSC Outside Lead Pitch e1 1.90 BSC Overall Height A 0.90 – 1.45 Molded Package Thickness A2 0.89 – 1.30 Standoff A1 0.00 – 0.15 Overall Width E 2.20 – 3.20 Molded Package Width E1 1.30 – 1.80 Overall Length D 2.70 – 3.10 Foot Length L 0.10 – 0.60 Footprint L1 0.35 – 0.80 Foot Angle φ 0° – 30° Lead Thickness c 0.08 – 0.26 Lead Width b 0.20 – 0.51 Notes: 1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. MicrochipTechnologyDrawingC04-091B © 2007 Microchip Technology Inc. DS21335E-page 15

TC1014/TC1015/TC1185 NOTES: DS21335E-page 16 © 2007 Microchip Technology Inc.

TC1014/TC1015/TC1185 APPENDIX A: REVISION HISTORY Revision E (February 2007) • Section1.0 “Electrical characteristics”: Changed Dropout Voltage from mA to µA. • Updated “Product Identification System”, page19. • Updated Section6.0 “Packaging Information”. Revision D (April 2006) • Removed “ERROR is open circuited” from SHDN pin description in Pin Function Table. • Added verbiage for pinout descriptions in Pin Function Table. • Replaced verbiage in first paragraph of Section 4.0 Detailed Description. • Added Section 4.3 Input Capacitor Revision C (January 2006) • Changed TR suffix to 713 suffix in Taping Form in Package Marking Section Revision B (May 2002) • Converted Telcom data sheet to Microchip standard for Analog Handbook Revision A (February 2001) • Original Release of this Document under Telcom. © 2007 Microchip Technology Inc. DS21335E-page 17

TC1014/TC1015/TC1185 NOTES: DS21335E-page 18 © 2007 Microchip Technology Inc.

TC1014/TC1015/TC1185 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. -X.X X XXXXX Examples: a) TC1014-1.8VCT713: 1.8V, 5LD SOT-23, Device Output Temperature Package Tape and Reel. Voltage Range b) TC1014-2.85VCT713: 2.85V, 5LD SOT-23, Tape and Reel. Device: TC1014: 50mA LDO with Shutdown and VREF Bypass c) TC1014-3.3VCT713: 3.3V, 5LD SOT-23, TC1015: 100mA LDO with Shutdown and VREF Bypass Tape and Reel. TC1185: 150mA LDO with Shutdown and VREF Bypass a) TC1015-1.8VCT713: 1.8V, 5LD SOT-23, Tape and Reel. Output Voltage: 1.8 = 1.8V 2.5 = 2.5V b) TC1015-2.85VCT713: 2.85V, 5LD SOT-23, 2.6 = 2.6V Tape and Reel. 2.7 = 2.7V c) TC1015-3.0VCT713: 3.0V, 5LD SOT-23, 2.8 = 2.8V Tape and Reel. 2.85= 2.85V 3.0 = 3.0V 3.3 = 3.3V a) TC1185-1.8VCT713: 1.8V, 5LD SOT-23, 3.6 = 3.6V Tape and Reel. 4.0 = 4.0V b) TC1185-2.8VCT713: 2.8V, 5LD SOT-23, 5.0 = 5.0V Tape and Reel. Temperature Range: V = -40°C to +125°C Package: CT713 = Plastic Small Outline Transistor (SOT-23), 5-lead, Tape and Reel © 2007 Microchip Technology Inc. DS21335E-page 19

TC1014/TC1015/TC1185 NOTES: DS21335E-page 20 © 2007 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device Trademarks applications and the like is provided only for your convenience The Microchip name and logo, the Microchip logo, Accuron, and may be superseded by updates. It is your responsibility to dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC, ensure that your application meets with your specifications. PICmicro, PICSTART, PROMATE, PowerSmart, rfPIC, and MICROCHIP MAKES NO REPRESENTATIONS OR SmartShunt are registered trademarks of Microchip WARRANTIES OF ANY KIND WHETHER EXPRESS OR Technology Incorporated in the U.S.A. and other countries. IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, AmpLab, FilterLab, Linear Active Thermistor, Migratable INCLUDING BUT NOT LIMITED TO ITS CONDITION, Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor QUALITY, PERFORMANCE, MERCHANTABILITY OR and The Embedded Control Solutions Company are FITNESS FOR PURPOSE. Microchip disclaims all liability registered trademarks of Microchip Technology Incorporated arising from this information and its use. Use of Microchip in the U.S.A. devices in life support and/or safety applications is entirely at Analog-for-the-Digital Age, Application Maestro, CodeGuard, the buyer’s risk, and the buyer agrees to defend, indemnify and dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, hold harmless Microchip from any and all damages, claims, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, suits, or expenses resulting from such use. No licenses are In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, conveyed, implicitly or otherwise, under any Microchip MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit, intellectual property rights. PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2007, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona, Gresham, Oregon and Mountain View, California. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2007 Microchip Technology Inc. DS21335E-page 21

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