T835H, T850H High temperature 8 A Snubberless™ Triacs Datasheet - production data Applications A2 Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum G motor, these 8 A Triacs provide a very high A2 A1 switching capability up to 150 °C junction temperatures. The heatsink can be reduced, compared to traditional Triac, according to the high performance at given junction temperatures. G G A2 A2 Description A1 A1 Available in through-hole or surface mount TO-220AB TO-220ABIns. packages, these Triacs series are suitable for A2 general purpose mains power ac switching. By using an internal ceramic pad, they provide voltage insulation (rated at 2500 V ). RMS G A2 Table 1: Device summary A1 D²PAK Symbol Value Unit IT(RMS) 8 A VDRM/VRRM 600 V Features IGT 35 or 50 mA  Medium current Triac  150 °C max. T turn-off commutation j  Low thermal resistance with clip bonding  Very high 3 quadrant commutation capability  Packages are RoHS (2002/95/EC) compliant  UL certified (ref. file E81734) February 2018 DocID13564 Rev 4 1/13 This is information on a product in full production. www.st.com

Characteristics T835H, T850H 1 Characteristics Table 2: Absolute ratings (limiting values) Symbol Parameter Value Unit D²PAK, RMS on-state current TO-220AB TC = 133 °C IT(RMS) (full sine wave) 8 A TO-220A Ins. TC = 116 °C Non repetitive surge peak f = 50 Hz tp = 20 ms 80 ITSM on-state current A (full cycle, Tj initial = 25 °C) f = 60 Hz tp = 16.7 ms 84 I²t I²t value for fusing tp = 10 ms 42 A²s Critical rate of rise of dl/dt on-state current f = 50 Hz Tj = 150 °C 50 A/µs IG = 2 x IGT , tr ≤ 100 ns VVDRSSMM / Nofof-ns traetpee vtiotilvtaeg seu rge peak tp = 10 ms Tj = 25 °C VD R+M 1/V0R0R M V IGM Peak forward gate current tp = 20 µs Tj = 150 °C 4 A PG(AV) Average gate power dissipation Tj = 150 °C 1 W Tstg Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Value Unit Symbol Test Conditions Quadrant T835H T850H IGT(1) 35 50 mA VD = 12 V, RL = 33 Ω I - II - III Max. VGT 1.0 mA VGD VD = VDRM, RL = 3.3 kΩ I - II - III Min. 0.15 V IH(2) IT = 500 mA Max. 35 75 mA I - III 50 60 IL IG = 1.2 x IGT Max. mA II 80 110 dV/dt(2) VD = 2/3 x VDRM, gate open Tj = 150 °C Min. 1000 1500 V/µs (dI/dt)c(2) Without snubber Tj = 150 °C Min. 11 14 A/ms Notes: (1)minimum IGT is guaranted at 20% of IGT max. (2)for both polarities of A2 referenced to A1. 2/13 DocID13564 Rev 4

T835H, T850H Characteristics Table 4: Static characteristics Symbol Test conditions Value Unit VT(1) ITM = 11 A, tp = 380 μs Tj = 25 °C Max. 1.5 V Vt0(1) Threshold voltage Tj = 150 °C Max. 0.80 V Rd(1) Dynamic resistance Tj = 150 °C Max. 52 mΩ Tj = 25 °C Max. 5 µA VDRM = VRRM Tj = 150 °C Max. 3.1 IDRM / IRRM VD/VR = 400 V (at peak mains voltage) Tj = 150 °C Max. 2.5 mA VD/VR = 200 V (at peak mains voltage) Tj = 150 °C Max. 2.0 Notes: (1)for both polarities of A2 referenced to A1 Table 5: Thermal parameters Symbol Parameter Value Unit D²PAK, TO-220AB 1.85 Rth(j-c) Junction to case (AC) TO-220AB Ins. 3.7 °C/W Junction to ambient (Scu = 1 cm2, D²PAK) D²PAK 45 Rth(j-a) Junction to ambient TO-220AB, TO-220AB Ins. 60 DocID13564 Rev 4 3/13

Characteristics T835H, T850H 1.1 Characteristics (curves) Figure 2: On-state RMS current versus case Figure 1: Maximum power dissipation versus on- temperature (full cycle) state RMS current (full cycle) P(W) IT(RMS)(A) 10 9 TO-220AB/D²PAK 9 α=180° 8 8 7 TIOns-u2l2a0teAdB 7 6 6 5 5 4 4 3 3 2 180° 2 1 IT(RMS)(A) 1 α=180° TC(°C) 0 0 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 Figure 3: On-state RMS current versus ambient Figure 4: Variation of thermal impedance versus temperature pulse duration IT(RMS)(A) Zth(°C/W) 4.5 1,0E+00 4.0 Epocxoypppreinrttehdickcnirceusistb=o3a5rdµmFR4, αD=²1P8A0K° Zth(j-c) SCU=1cm² 3.5 3.0 1,0E-01 2.5 Zth(j-a) 2.0 1.5 1,0E-02 1.0 0.5 Tamb(°C) tP(s) 0.0 1,0E-03 0 25 50 75 100 125 150 1,0E-03 1,0E-02 1,0E-01 1,0E+00 1,0E+01 1,0E+02 1,0E+03 Figure 5: On-state characteristics (maximum Figure 6: Surge peak on-state current versus values) number of cycles ITM(A) ITSM(A) 100 90 80 70 t=20ms Nonrepetitive 60 Tjinitial=25°C Onecycle T=150°C 50 j 10 40 Repetitive Tj=25°C 30 Tc=116°C 20 Tmax.: V j=0.80V 10 Rt0=52mΩ Numberofcycles VTM(V) d 0 1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 4/13 DocID13564 Rev 4

T835H, T850H Characteristics Figure 7: Non-repetitive surge peak on-state Figure 8: Relative variation of IGT,IH, IL vs junction current for a sinusoidal pulse temperature (typical values) Figure 9: Relative variation of critical rate of Figure 10: Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied decrease of main current versus junction (dV/dt)c temperature (dl/dt)c[(dV/dt)c]/specified(dl/dt)c (dl/dt)c[(Tj]/(dl/dt)c[Tj=150°C] 2.0 8 typicalvalues 1.8 7 1.6 6 1.4 1.2 5 1.0 4 0.8 3 0.6 2 0.4 0.2 1 0.0 (dV/dt)C(V/µs) 0 Tj(°C) 0.1 1.0 10.0 100.0 25 50 75 100 125 150 Figure 11: Leakage current versus junction Figure 12: Variation of thermal resistance junction temperature for different values of blocking to ambient versus copper surface under tab voltage (typical values) 80 Rth(j-a)(°C/W) D²PAK 70 60 50 40 30 20 10 SCU(cm²) 0 0 5 10 15 20 25 30 35 40 DocID13564 Rev 4 5/13

Package information T835H, T850H 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.  Epoxy meets UL94, V0  Lead-free package leads  Cooling method: by conduction (C) 2.1 D²PAK package information Figure 13: D²PAK package outline 6/13 DocID13564 Rev 4

T835H, T850H Package information Table 6: D²PAK package mechanical data Dimensions Ref. Millimeters Inches(1) Min. Typ. Max. Min. Typ. Max. A 4.30 4.60 0.1693 0.1811 A1 2.49 2.69 0.0980 0.1059 A2 0.03 0.23 0.0012 0.0091 A3 0.25 0.0098 b 0.70 0.93 0.0276 0.0366 b2 1.25 1.7 0.0492 0.0669 c 0.45 0.60 0.0177 0.0236 c2 1.21 1.36 0.0476 0.0535 D 8.95 9.35 0.3524 0.3681 D1 7.50 8.00 0.2953 0.3150 D2 1.30 1.70 0.0512 0.0669 e 2.54 0.1 E 10.00 10.28 0.3937 0.4047 E1 8.30 8.70 0.3268 0.3425 E2 6.85 7.25 0.2697 0.2854 G 4.88 5.28 0.1921 0.2079 H 15 15.85 0.5906 0.6240 L 1.78 2.28 0.0701 0.0898 L2 1.27 1.40 0.0500 0.0551 L3 1.40 1.75 0.0551 0.0689 R 0.40 0.0157 V2 0° 8° 0° 8° Notes: (1)Dimensions in inches are given for reference only DocID13564 Rev 4 7/13

Package information T835H, T850H Figure 14: D²PAK recommended footprint (dimensions are in mm) 8/13 DocID13564 Rev 4

T835H, T850H Package information 2.2 TO-220AB Insulated package information Figure 15: TO-220AB Insulated package outline DocID13564 Rev 4 9/13

Package information T835H, T850H Table 7: TO-220AB Insulated package mechanical data Dimensions Ref. Millimeters Inches(1) Min. Typ. Max. Min. Typ. Max. A 15.20 15.90 0.5984 0.6260 a1 3.75 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.40 16.80 0.6220 0.6457 0.6614 M 2.6 0.1024 Notes: (1)Inch dimensions are for reference only. 10/13 DocID13564 Rev 4

T835H, T850H Ordering information 3 Ordering information Figure 16: Ordering information scheme T 8 xx H - 6 y -TR Triacseries Current 8=8A Sensitivity 35=35mA 50=50mA Hightemperature Voltage 6=600V Package G=D²PAK T=TO-220AB I=TO-220ABIns Packing Blank=Tube(D²PAK, TO-220AB) -TR=Tapeandreel(D²PAK) Table 8: Ordering information Order code Marking Package Weight Base qty. Delivery mode T8xxH-6G T8xxH 6G D²PAK 1.5 g 50 Tube T8xxH-6G-TR T8xxH 6G D²PAK 1.5 g 1000 Tape and reel T8xxH-6T T8xxH 6T TO-220AB 2.3 g 50 Tube T8xxH-6I T8xxH 6I TO-220AB Ins. 2.3 g 50 Tube DocID13564 Rev 4 11/13

Revision history T835H, T850H 4 Revision history Table 9: Document revision history Date Revision Changes 17-Apr-2007 1 First issue. 19-Sep-2011 2 Updated: Features, Description, Figure 2, Table 2 and 4. Minor text changes. Updated Table 4: "Static characteristics" and 30-Mar-2017 3 Figure 7: "Non-repetitive surge peak on-state current for a sinusoidal pulse". Updated Table 2: "Absolute ratings (limiting values)", 07-Feb-2018 4 Figure 2: "On-state RMS current versus case temperature (full cycle)" and Figure 6: "Surge peak on-state current versus number of cycles". 12/13 DocID13564 Rev 4

T835H, T850H IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DocID13564 Rev 4 13/13

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