NUP2105L, SZNUP2105L ESD Protection Diode Dual Line CAN Bus Protector The SZ/NUP2105L has been designed to protect the CAN transceiver in high−speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides www.onsemi.com bidirectional protection for each data line with a single compact SOT−23 package, giving the system designer a low cost option for SOT−23 improving system reliability and meeting stringent EMI requirements. DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR Features • 350 W Peak Power Dissipation per Line (8/20 (cid:2)sec Waveform) 350 W PEAK POWER • Low Reverse Leakage Current (< 100 nA) • Low Capacitance High−Speed CAN Data Rates • IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4, 30 kV − IEC 61000−4−4 (EFT): 40 A – 5/50 ns − IEC 61000−4−5 (Lighting) 8.0 A (8/20 (cid:2)s) SOT−23 • CASE 318 ISO 7637−2 Pulse 2a: Repetitive Load Switch Disconnect, 9.5 A STYLE 27 • ISO 7637−3 Pulse 3a,b: Repetitive Load Switching Fast Transients, 50 A PIN 1 • Flammability Rating UL 94 V−0 PIN 3 • SZ Prefix for Automotive and Other Applications Requiring Unique PIN 2 Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable CAN_H • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CAN Compliant Transceiver CAN_L CAN Bus Applications • NUP2105L Industrial Control Networks ® ♦ Smart Distribution Systems (SDS ) ♦ DeviceNet™ • Automotive Networks ♦ Low and High−Speed CAN MARKING DIAGRAM ♦ Fault Tolerant CAN 27EM(cid:2) (cid:2) 1 27E = Device Code M = Date Code (cid:2) = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: October, 2017 − Rev. 9 NUP2105L/D

NUP2105L, SZNUP2105L MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol Rating Value Unit PPK Peak Power Dissipation W 8/20(cid:3)(cid:2)s Double Exponential Waveform (Note 1) 350 TJ Operating Junction Temperature Range −55 to 150 °C TJ Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C ESD Human Body model (HBM) 16 kV Machine Model (MM) 400 V IEC 61000−4−2 Specification (Contact) 30 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Unit VRWM Reverse Working Voltage (Note 2) 24 − − V VBR Breakdown Voltage IT = 1 mA (Note 3) 26.2 − 32 V IR Reverse Leakage Current VRWM = 24 V − 1.5 100 nA VC Clamping Voltage IPP = 5 A (8/20 (cid:2)s Waveform) − − 40 V (Note 4) VC Clamping Voltage IPP = 8 A (8/20 (cid:2)s Waveform) − − 44 V (Note 4) IPP Maximum Peak Pulse Current 8/20 (cid:2)s Waveform (Note 4) − − 8.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) − − 30 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. ORDERING INFORMATION Device Package Shipping† NUP2105LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) SZNUP2105LT1G* SOT−23 3,000 / Tape & Reel (Pb−Free) NUP2105LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) SZNUP2105LT3G* SOT−23 10,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 2

NUP2105L, SZNUP2105L TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 110 12.0 100 WAVEFORM A) PULSE WAVEFORM RENT 90 Ptr A=R 8A (cid:2)MsETERS ENT (10.0 8 x 20 (cid:2)s per Figure 1 UR 80 td = 20 (cid:2)s RR SE C 7600 c−t E CU 8.0 L S U L 6.0 P 50 td = IPP/2 U AK 40 K P E A 4.0 P 30 E OF 20 , PP % IP 2.0 10 0 0.0 0 5 10 15 20 25 30 25 30 35 40 45 50 t, TIME ((cid:2)s) VC, CLAMPING VOLTAGE (V) Figure 1. Pulse Waveform, IEC 61000−4−5 8/20 (cid:2)s Figure 2. Clamping Voltage vs Peak Pulse Current 35 50 f = 1.0 MHz, Line to Ground 45 30 40 F) 125°C p 35 E ( TANC 25 25°C mA) 2350 25°C CI , (T 65°C PA 20 −40°C I 20 A C 15 C, 15 10 −55°C 5 TA = +150°C 10 0 0 2 4 6 8 10 20 22 24 26 28 30 32 34 VR, REVERSE VOLTAGE (V) VBR, VOLTAGE (V) Figure 3. Typical Junction Capacitance vs Figure 4. VBR versus IT Characteristics Reverse Voltage 25 120 V) 125°C E ( TA = 150°C 100 AG 20 65°C %) T OL 25°C, −55°C G ( 80 V 15 N S TI E BIA 10 DERA 60 RS NT 40 , REVER 5 PERCE 20 V 0 0 0 2 4 6 8 10 12 14 16 −60 −30 0 30 60 90 120 150 180 IL, LEAKAGE CURRENT (nA) TEMPERATURE (°C) Figure 5. I versus Temperature Characteristics Figure 6. Temperature Power Dissipation Derating R www.onsemi.com 3

NUP2105L, SZNUP2105L APPLICATIONS Background ESD. The NUP2105L has been tested to EMI and ESD The Controller Area Network (CAN) is a serial levels that exceed the specifications of popular high speed communication protocol designed for providing reliable CAN networks. high speed data transmission in harsh environments. surge protection diodes provide a low cost solution to conducted CAN Physical Layer Requirements Table 1 provides a summary of the system requirements and radiated Electromagnetic Interference (EMI) and Electrostatic Discharge (ESD) noise problems. The noise for a CAN transceiver. The ISO 11898−2 physical layer immunity level and reliability of CAN transceivers can be specification forms the baseline for most CAN systems. The ® easily increased by adding external surge protection diodes transceiver requirements for the Honeywell Smart ® Distribution Systems (SDS ) and Rockwell to prevent transient voltage failures. (Allen−Bradley) DeviceNet™ high speed CAN networks The NUP2105L provides a surge protection solution for are similar to ISO 11898−2. The SDS and DeviceNet CAN data communication lines. The NUP2105L is a dual transceiver requirements are similar to ISO 11898−2; bidirectional surge protection device in a compact however, they include minor modifications required in an SOT−23 package. This device is based on Zener technology that optimizes the active area of a PN junction to provide industrial environment. robust protection against transient EMI surge voltage and Table 1. Transceiver Requirements for High−Speed CAN Networks Parameter ISO 11898−2 SDS Physical Layer DeviceNet Specification 2.0 Min / Max Bus Voltage −3.0 V / 16 V 11 V / 25 V Same as ISO 11898−2 (12 V System) Common Mode Bus Voltage CAN_L: −2.0 V (min) Same as ISO 11898−2 Same as ISO 11898−2 2.5 V (nom) CAN_H: 2.5 V (nom) 7.0 V (max) Transmission Speed 1.0 Mb/s @ 40 m Same as ISO 11898−2 500 kb/s @ 100 m 125 kb/s @ 500 m 125 kb/s @ 500 m ESD Not specified, recommended Not specified, recommended Not specified, recommended (cid:2) (cid:3)8.0 kV (contact) (cid:2) (cid:3)8.0 kV (contact) (cid:2) (cid:3)8.0 kV (contact) EMI Immunity ISO 7637−3, pulses ‘a’ and ‘b’ IEC 61000−4−4 EFT Same as ISO 11898−2 Popular Applications Automotive, Truck, Medical Industrial Control Systems Industrial Control Systems and Marine Systems www.onsemi.com 4

NUP2105L, SZNUP2105L EMI Specifications 61000−4 and ISO 7637 tests are similar; however, the IEC The EMI protection level provided by the surge protection standard was created as a generic test for any electronic device can be measured using the International Organization system, while the ISO 7637 standard was designed for for Standardization (ISO) 7637−2 and −3 specifications that vehicular applications. The IEC61000−4−4 Electrical Fast are representative of various noise sources. The ISO 7637−2 Transient (EFT) specification is similar to the ISO 7637−3 specification is used to define the susceptibility to coupled pulse 3a and b tests and is a requirement of SDS CAN transient noise on a 12 V power supply, while ISO 7637−3 systems. The IEC 61000−4−5 test is used to define the power defines the noise immunity tests for data lines. The ISO 7637 absorption capacity of a surge protection device and long tests also verify the robustness and reliability of a design by duration voltage transients such as lightning. Table 2 applying the surge voltage for extended durations. provides a summary of the ISO 7637 and IEC 61000−4−X The IEC 61000−4−X specifications can also be used to test specifications. Table 3 provides the NUP2105L’s ESD quantify the EMI immunity level of a CAN system. The IEC test results. Table 2. ISO 7637 and IEC 61000−4−X Test Specifications Test Waveform Test Specifications NUP2105L Results Simulated Noise Source Vs = 0 to −100 V Imax = 1.75 A DUT (Note 1) in parallel with Imax = 10 A Vclamp_max = 31 V inductive load that is Pulse 1 tduration = 5000 pulses disconnected from power tduration = 5000 pulses supply. Ri = 10 (cid:4), tr = 1.0 (cid:2)s, ISO 7637−2 td_t120 =% 2 =0 02 0m0s0, (cid:2)t3s ,= t 11 0=0 2 (cid:2).5s s, 12 V Power Supply Lines Vs = 0 to +50 V Imax = 9.5 A DUT in series with inductor (Note 2) coupled onto 14 V battery Vclamp_max = 42 V (wire harness) that is Pulse 2a Imax = 10 A tduration = 5000 pulses disconnected from load. tduration = 5000 pulses td_1R0i% = =2 5(cid:4)0, (cid:2)trs =, t11. 0= (cid:2)2s.5, s, t2 = 200 ms Vs = −60 V Imax = 50 A (Note 4) Switching noise of inductive Pulse ‘a’ Imax = 1.2 A Vclamp_max = 40 V loads. ISO 7637−3 tduration = 60 minutes tduration = 10 minutes Rtraenpseiteitnivtse (dNaotate l i3n)e fast Pulse ‘b’ IVmsa x= = + 04.08 VA td_1tR02% i= = =1 5 010 0m (cid:4)0s ,n, tstr3 ,= t= 15 9=.00 1 nm0s0s, (cid:2)s, tduration = 10 minutes Vopen circuit = 2.0 kV (Note 5) Switching noise of inductive Ishort circuit = 40 A loads. (Level 4 = Severe Industrial Environment) IEC 61000−4−4 Data Line EFT Ri = 50 (cid:4), tr < 5.0 ns, td_50% = 50 ns, tburst = 15 ms, fburst = 2.0 to 5.0 kHz, trepeat = 300 ms tduration = 1 minute Vopen circuit = 1.2/50 (cid:2)s, Imax = 8.0 A Lightning, nonrepetitive IEC 61000−4−5 Ishort circuit = 8/20 (cid:2)s power line and load switching Ri = 50 (cid:4) 1. DUT = device under test. 2. Test specifications were taken from ISO7637−2: 2004 version. 3. Test specifications were taken from ISO7637−3: 1995 version. 4. DUT was tested to ISO7637−2: 2004 pulse 3a,b specification for more rigorous test. 5. The EFT immunity level was measured with test limits beyond the IEC 61000−4−4 test, but with the more severe test conditions of ISO 7637−3. www.onsemi.com 5

NUP2105L, SZNUP2105L Table 3. NUP2105L ESD Test Results ESD Specification Test Test Level Pass / Fail Human Body Model Contact 16 kV Pass Contact 30 kV (Note 6) Pass IEC 61000−4−2 Non−contact (Air Discharge) 30 kV (Note 6) Pass 6. Test equipment maximum test voltage is 30 kV. Surge protection Diode Protection Circuit surge protection diodes provide protection to a breakdown voltage of the diode that is reversed biased, plus transceiver by clamping a surge voltage to a safe level. surge the diode drop of the second diode that is forwarded biased. protection diodes have high impedance below and low impedance above their breakdown voltage. A surge CAN_H protection Zener diode has its junction optimized to absorb CAN CAN_L CAN Bus the high peak energy of a transient event, while a standard Transceiver Zener diode is designed and specified to clamp a steady state voltage. NUP2105L Figure 7 provides an example of a dual bidirectional surge protection diode array that can be used for protection with the high−speed CAN network. The bidirectional array is created from four identical Zener surge protection diodes. Figure 7. High−Speed and Fault Tolerant CAN Surge The clamping voltage of the composite device is equal to the Protection Circuit www.onsemi.com 6

NUP2105L, SZNUP2105L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 27: END VIEW PIN 1.CATHODE 2.CATHODE 3.CATHODE RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Honeywell and SDS are registered trademarks of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com NUP2105L/D 7

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