SUM40N10-30 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFETS V (V) r (Ω) I (A) (BR)DSS DS(on) D (cid:129) 175 °C Junction Temperature Available 100 0.030 at VGS = 10 V 40 (cid:129) Low Thermal Resistance Package RoHS* 0.034 at VGS = 6 V 37.5 COMPLIANT D TO-263 G G D S Top View S Ordering Information: SUM40N10-30 SUM40N10-30-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 TC = 25 °C 40 Continuous Drain Current (T = 175 °C) I J D TC = 125 °C 23 A Pulsed Drain Current IDM 75 Avalanche Current IAR 35 Repetitive Avalanche Energya L = 0.1 mH EAR 61 mJ TC = 25 °C 107b Maximum Power Dissipationa T = 25 °Cc PD 3.75 W A Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c RthJA 40 °C/W Junction-to-Case (Drain) RthJC 1.4 Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72134 www.vishay.com S-80272-Rev. B, 11-Feb-08 1

SUM40N10-30 Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VSS = 0 V, ID = 250 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 4 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 80 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V, TJ = 125 °C 50 µA VDS = 80 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 75 A VGS = 10 V, ID = 15 A 0.024 0.030 Drain-Source On-State Resistancea rDS(on) VGS = 6 V, ID = 10 A 0.026 0.034 Ω VGS = 10 V, ID = 15 A, TJ = 125 °C 0.054 VGS = 10 V, ID = 15 A, TJ = 175 °C 0.067 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 10 S Dynamicb Input Capacitance Ciss 2400 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 270 pF Reverse Transfer Capacitance Crss 90 Total Gate Chargec Qg 35 60 Gate-Source Chargec Qgs VDS = 50 V, VGS = 10 V, ID = 40 A 11 nC Gate-Drain Chargec Qgd 9 Gate Resistance RG 1.7 Ω Turn-On Delay Timec td(on) 11 20 Rise Timec tr VDD = 50 V, RL = 1.25 Ω 12 20 ns Turn-Off Delay Timec td(off) ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 30 45 Fall Timec tf 12 20 Source-Drain Diode Ratings and Characteristics T = 25 °Cb C Continuous Current IS 40 A Pulsed Current ISM 75 Forward Voltagea VSD IF = 30 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr 60 100 ns Peak Reverse Recovery Current IRM(REC) IF = 30 A, di/dt = 100 A/µs 5 8 A Reverse Recovery Charge Qrr 0.15 0.4 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72134 2 S-80272-Rev. B, 11-Feb-08

SUM40N10-30 Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 75 75 VGS = 10 thru 6 V 60 60 A) A) ent ( 45 ent ( 45 urr 5 V urr C C n n Drai 30 Drai 30 - ID - ID TC = 125 °C 15 15 25 °C 4 V - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 0.08 TC =- 55 °C 80 S) 25 °C e ()Ω 0.06 ctance ( 60 125 °C esistanc ndu n-R 0.04 VGS = 6 V o O sc 40 - - Trangfs 20 rDS(on) 0.02 VGS = 10 V 0 0.00 0 15 30 45 60 75 0 15 30 45 60 75 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 3000 20 2400 Ciss e (V) 16 VIDD =S 4=0 5 A0 V g pF) olta ance ( 1800 urce V 12 Capacit 1200 e-to-So 8 C - Gat - 600 S 4 Crss VG Coss 0 0 0 20 40 60 80 100 0 10 20 30 40 50 60 70 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72134 www.vishay.com S-80272-Rev. B, 11-Feb-08 3

SUM40N10-30 Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2.5 100 VGS = 10 V ID = 15 A 2.0 ce A) n-Resistan malized) 1.5 e Current ( 10 TJ = 150 °C TJ = 25 °C - OS(on)(Nor 1.0 - Sourc D S r I 0.5 0.0 1 -50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 T J - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 130 V) 125 ID = 10 mA e ( g 100 a olt 120 V n w A) do 115 ( k av 10 IAV (A) at TA = 25 °C ea ID e Br 110 c ur o S 105 1 n- ai Dr 100 IAV (A) at TA = 150 °C 0.1 95 -50 -25 0 25 50 75 100 125 150 175 0.00001 0.0001 0.001 0.01 0.1 1 tin (s) T J - Junction Temperature (°C) Avalanche Current vs. Time Drain-Source Breakdown Voltage vs. Junction Temperature www.vishay.com Document Number: 72134 4 S-80272-Rev. B, 11-Feb-08

SUM40N10-30 Vishay Siliconix THERMAL RATINGS 50 1000 Limited 40 by rDS(on)* 100 10 µs A) A) nt ( 30 nt ( 100 µs e e Curr Curr 10 n n 1 ms Drai 20 Drai - - 10 ms D D I 10 I 1 TC = 25 °C DC, 100 ms Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 TC - Ambient Temperature (°C) * VGS V mDiSn i-m Durmai nV-GtoS- Saot uwrhciec hV orDltSa(goen) (iVs)specified Maximum Avalanche and Drain Current Safe Operating Area vs. Case Temperature 2 1 Duty Cycle = 0.5 nt e e Transiedance 00..21 ctivmp ed Effeermal I 0.1 zh aliT 0.05 m or 0.02 N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72134. Document Number: 72134 www.vishay.com S-80272-Rev. B, 11-Feb-08 5

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