SUM110N06-3m9H Vishay Siliconix N-Channel 60-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET V (V) r (Ω) I (A) Q (Typ) (BR)DSS DS(on) D g 60 0.0039 at VGS = 10 V 110a 200 (cid:129) 175 °C Junction Temperature RoHS (cid:129) Low Thermal Resistance Package COMPLIANT (cid:129) High Threshold Voltage At High Temperature (cid:129) 100 % R Tested g D TO-263 G G D S Top View S Ordering Information:SUM110N06-3m9H-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 TC = 25 °C 110a Continuous Drain Current (TJ = 175 °C) TC = 125 °C ID 110a A Pulsed Drain Current IDM 440 Single Pulse Avalanche Current IAS 70 Single Pulse Avalanche Energy L = 0.1 mH EAS 245 mJ TC = 25 °C 375c Maximum Power Dissipationb T = 25 °Cd PD 3.75 W A Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient PCB Mountd RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.4 Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 73236 www.vishay.com S-70534-Rev. C, 26-Mar-07 1

SUM110N06-3m9H Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3.4 4.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V 100 nA VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 µA VDS = 60 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 120 A VGS = 10 V, ID = 30 A 0.00325 0.0039 Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125 °C 0.0063 Ω VGS = 10 V, ID = 30 A, TJ = 175 °C 0.0082 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S Dynamicb Input Capacitance Ciss 15 800 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1050 pF Reverse Transfer Capacitance Crss 600 Gate Resistance Rg f = 1 MHz 0.6 1.2 1.8 Ω Total Gate Chargec Qg 200 300 Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 110 A 80 nC Gate-Drain Chargec Qgd 45 Turn-On Delay Timec td(on) 45 70 Rise Timec tr VDD = 30 V, RL = 0.27 Ω 160 240 ns Turn-Off Delay Timec td(off) ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω 75 115 Fall Timec tf 14 25 Source-Drain Diode Ratings and Characteristics (T = 25°C)b C Continuous Current IS 110 A Pulsed Current ISM 240 Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.1 1.5 V Reverse Recovery Time trr 65 100 ns Peak Reverse Recovery Current IRM(REC) IF = 85 A, di/dt = 100 A/µs 4.4 6.6 A Reverse Recovery Charge Qrr 143 330 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73236 2 S-70534-Rev. C, 26-Mar-07

SUM110N06-3m9H Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 250 250 VGS = 10 thru 7 V 200 200 Current (A) 150 6 V Current (A) 150 Drain 100 Drain 100 - ID - D TC = 125 °C I 50 50 25 °C 5 V -55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 7 VDS- Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 300 0.006 TC = -55 °C 250 25 °C 0.005 S) Ω) uctance ( 200 125 °C sistance ( 0.004 VGS = 10 V nd 150 Re 0.003 co n- s O an - Tr 100 n) 0.002 - fs DS(o g r 50 0.001 0 0.000 0 15 30 45 60 75 90 0 20 40 60 80 100 120 ID- Drain Current (A) ID- Drain Current (A) Transconductance On-Resistance vs. Drain Current 21000 20 18000 Ciss e (V) 16 VIDD =S 1=1 300 A V ance (pF) 1125000000 urce Voltag 12 cit So pa 9000 o- Ca e-t 8 C- 6000 - Gat Coss GS 4 3000 Crss V 0 0 0 10 20 30 40 50 60 0 50 100 150 200 250 300 350 400 VDS- Drain-to-Source Voltage (V) Qg- Total Gate Charge (nC) Capacitance Gate Charge Document Number: 73236 www.vishay.com S-70534-Rev. C, 26-Mar-07 3

SUM110N06-3m9H Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2.0 100 VGS= 10 V ID = 30 A 1.7 ce A) On-Resistanmalized) 1.4 ce Current ( 10 TJ= 150 °C TJ= 25 °C - S(on)(Nor 1.1 - Sour D S r I 0.8 0.5 1 -50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ- Junction Temperature (°C) VSD- Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 74 72 100 ID = 10 mA 70 IAV (A) at TA= 25 °C V) (a)Dav 10 (R)DSS 68 I V(B 66 IAV (A) at TA= 150 °C 64 1 62 0.1 60 -50 -25 0 25 50 75 100 125 150 175 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) TJ- Junction Temperature (°C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature www.vishay.com Document Number: 73236 4 S-70534-Rev. C, 26-Mar-07

SUM110N06-3m9H Vishay Siliconix THERMAL RATINGS 300 1000 10 µs 250 *Limited by rDS(on) 100 A) 200 A) 100 µs Current ( 150 Current ( 10 1 ms Drain Drain 1d0c, m10s0 ms - D 100 - D I Limited By Package I 1 TC = 25 °C 50 Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 TC- Case Temperature (°C) VDS- Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on)isspecified Maximum Avalanche and Drain Current Safe Operating Area vs. Case Temperature 2 1 Duty Cycle = 0.5 nt e e Transiedance 0.2 ctivmp zed Effehermal I 0.1 0.002.050.1 maliT Single Pulse or N 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73236. Document Number: 73236 www.vishay.com S-70534-Rev. C, 26-Mar-07 5

Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1