SUM110N03-04P New Product Vishay Siliconix (cid:1) N-Channel 30-V (D-S) 175 C MOSFET FEATURES (cid:1) TrenchFET(cid:2) Power MOSFET (cid:1) 175(cid:3)C Junction Temperature PRODUCT SUMMARY (cid:1) Optimized for Low-Side Synchronous Rectifier Operation V(BR)DSS (V) rDS(on) ((cid:1)) ID (A) (cid:1) New Package with Low Thermal Resistance (cid:1) 100% R Tested g 0.0042 @ VGS = 10 V 110 3300 APPLICATIONS 0.0065 @ VGS = 4.5 V 77 (cid:1) DC/DC Converters (cid:1) Synchronous Rectifier D TO-263 G G D S Top View S Ordering Information: SUM110N03-04P SUM110N03-04P-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25(cid:3)C UNLESS OTHERWISE NOTED) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS (cid:1)20 V TC = 25(cid:3)C 110 CCoonnttiinnuuoouuss DDrraaiinn CCuurrrreenntt ((TTJJ == 117755(cid:3)(cid:3)CC)) TC = 100(cid:3)C IIDD 88 AA Pulsed Drain Current IDM 300 Avalanche Current IAR 55 Repetitive Avalanche Energya L = 0.1 mH EAR 151 mJ TC = 25(cid:3)C 120b MMaaxxiimmuumm PPoowweerr DDiissssiippaattiioonnaa TA = 25(cid:3)Cc PPDD 3.75 WW Operating Junction and Storage Temperature Range TJ, Tstg −55 to 175 (cid:3)C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient PCB Mountc RthJA 40 (cid:3)(cid:3)CC//WW Junction-to-Case RthJC 1.25 Notes a. Duty cycle (cid:2) 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72366 www.vishay.com S-32523—Rev. B, 08-Dec-03 1

SUM110N03-04P Vishay Siliconix New Product SPECIFICATIONS (T =25(cid:3)C UNLESS OTHERWISE NOTED) J Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 (cid:2)A 30 VV Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 (cid:2)A 1 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = (cid:1)20 V (cid:1)100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltagge Drain Current IDDSSSS VDS = 30 V, VGS = 0 V, TJ = 125(cid:3)C 50 (cid:2)(cid:2)A VDS = 30 V, VGS = 0 V, TJ = 175(cid:3)C 250 On-State Drain Currenta ID(on) VDS (cid:3) 5 V, VGS = 10 V 120 A VGS = 10 V, ID = 20 A 0.0033 0.0042 VGS = 10 V, ID = 20 A, TJ = 125(cid:3)C 0.0063 DDrraaiinn-SSoouurrccee OOnn-SSttaattee RReessiissttaanncceeaa rrDS(on) VGS = 10 V, ID = 20 A, TJ = 175(cid:3)C 0.0076 (cid:1)(cid:1) VGS = 4.5 V, ID = 20 A 0.0052 0.0065 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 20 S Dynamicb Input Capacitance Ciss 5100 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 860 pF Reverse Transfer Capacitance Crss 430 Gate-Resistance Rg 0.5 1.0 1.7 (cid:1) Total Gate Chargeb Qg 40 60 Gate-Source Chargeb Qgs VDDSS = 15 V,, VGGSS = 4.5 V,, IDD = 50 A 18 nC Gate-Drain Chargeb Qgd 16 Turn-On Delay Timeb td(on) 12 20 RTuisren -TOimff eDbelay Timeb td(torff) ID (cid:4) 5VV0DD ADD, ==V G1155E NVV ,=, RR 1LL0 ==V ,00 R..33g (cid:1)(cid:1) = 2.5 (cid:1) 1420 2600 nnss Fall Timeb tf 10 15 Source-Drain Diode Ratings and Characteristics (T = 25(cid:3)C)c C Continuous Current IS 100 AA Pulsed Current ISM 300 Forward Voltagea VSD IF = 30 A, VGS = 0 V 1.2 1.5 V Reverse Recovery Time trr IF = 50 A, di/dt = 100 A/(cid:2)s 40 80 ns Notes a. Pulse test; pulse width (cid:2) 300 (cid:2)s, duty cycle (cid:2) 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com Document Number: 72366 2 S-32523—Rev. B, 08-Dec-03

SUM110N03-04P New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25(cid:3)C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 120 VGS = 10 thru 5 V 100 200 A) A) 80 nt ( 150 nt ( e e urr 4 V urr 60 C C n n ai 100 ai Dr Dr − − 40 TC = 125(cid:3)C D D I 50 I 20 25(cid:3)C 2 V 3 V −55(cid:3)C 0 0 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 180 0.010 TC = −55(cid:3)C 150 25(cid:3)C (cid:1)) 0.008 e (S) 120 nce ( ductanc 90 125(cid:3)C Resista 0.006 VGS = 4.5 V nscon − On- 0.004 VGS = 10 V a 60 − Trfs DS(on) 0.002 g 30 r 0 0.000 0 20 40 60 80 100 0 20 40 60 80 100 ID − Drain Current (A) ID − Drain Current (A) Capacitance Gate Charge 8000 10 7000 F) 6000 Ciss age (V) 8 VIDD =S 5=0 1 A5 V citance (p 45000000 ource Volt 6 a S − Cap 3000 ate-to- 4 C 2000 − G Coss S 2 G 1000 V 0 Crss 0 0 6 12 18 24 30 0 20 40 60 80 100 VDS − Drain-to-Source Voltage (V) Qg − Total Gate Charge (nC) Document Number: 72366 www.vishay.com S-32523—Rev. B, 08-Dec-03 3

SUM110N03-04P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25(cid:3)C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.8 100 VGS = 10 V 1.6 ID = 30 A (cid:1)) e ( A) − On-Resistanc(Normalized) 11..24 Source Current ( 10 TJ = 150(cid:3)C TJ = 25(cid:3)C n) 1.0 − DS(o IS r 0.8 0.6 1 −50 −25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ − Junction Temperature ((cid:3)C) VSD − Source-to-Drain Voltage (V) Drain-Source Voltage Breakdown vs. Junction Temperature 40 ID = 1.0 mA 38 V) 36 ( S S D BR) 34 ( V 32 30 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature ((cid:3)C) www.vishay.com Document Number: 72366 4 S-32523—Rev. B, 08-Dec-03

SUM110N03-04P New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area, Junction-to-Case 120 1000 Limited by rDS(on) 10 (cid:2)s 100 100 100 (cid:2)s A) 80 A) nt ( nt ( e e Curr 60 Curr 10 1 ms ain ain 10 ms Dr Dr dc, 100 ms − 40 − D D I I 1 TC = 25(cid:3)C 20 Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 TC − Case Temperature ((cid:3)C) VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 nt e ctive Transimpedance 00..21 ed Effeermal I 0.1 alizTh 0.05 m or 0.02 N Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Document Number: 72366 www.vishay.com S-32523—Rev. B, 08-Dec-03 5

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