New Product SUD50P04-13L Vishay Siliconix P-Channel 40-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET V (V) r (Ω) I (A) DS DS(on) D (cid:129) 175 °C Junction Temperature 0.013 at VGS = - 10 V - 60a RoHS - 40 0.022 at VGS = - 4.5 V - 48 COMPLIANT S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information:SUD50P04-13L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS - 40 V Gate-Source Voltage VGS ± 20 TC = 25 °C - 60c Continuous Drain Currentb ID TC = 100 °C - 43 Pulsed Drain Current IDM - 100 Continuous Source Current (Diode Conduction) IS - 60c Avalanche Current IAS - 40 L = 0.1 mH Avalanche Energy, EAS 80 mJ TC = 25 °C 93.7b Maximum Power Dissipationb PD W TA = 25 °C 3a Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤ 10 sec 15 18 Maximum Junction-to-Ambienta RthJA Steady State 40 50 °C/W Maximum Junction-to-Case (Drain) RthJC 1.3 1.8 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. b. Calculated based on maximum allowed Junction Temperature. Package limitation current is 50 A. Document Number: 73009 www.vishay.com S-71660-Rev. B, 06-Aug-07 1

New Product SUD50P04-13L Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 40 V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 40 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = - 40 V, VGS = 0 V, TJ = 125 °C - 50 On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 50 A VGS = - 10 V, ID = - 30 A 0.0105 0.013 Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.020 Ω VGS = - 4.5 V, ID = - 20 A 0.017 0.022 Forward Transconductancea gfs VDS = - 15 V, ID = - 30 A 15 S Dynamicb Input Capacitance Ciss 3120 Output Capacitance Coss VDS = - 25 V, VGS = 0 V, f = 1 MHz 440 pF Reverse Transfer Capacitance Crss 320 Gate Resistance Rg f = 1 MHz 4.3 Ω Total Gate Chargec Qg 63 95 Gate-Source Chargec Qgs VDS = - 20 V, VGS = - 10 V, ID = - 50 A 13 nC Gate-Drain Chargec Qgd 16 Turn-On Delay Timec td(on) 15 25 Rise Timec tr VDD = - 20 V, RL = 0.4 Ω 18 30 ns Turn-Off Delay Timec td(off) ID ≅ - 50 A, VGEN = - 10 V, Rg = 2.5 Ω 60 90 Fall Timec tf 47 70 Drain-Source Body Diode Characteristics Pulse Current ISM - 100 Forward Voltagea VSD IF = - 50 A, VGS = 0 V - 1.0 - 1.5 V Source-Drain Reverse Recovery Time trr IF = - 50 A, di/dT = 100 A/µs 36 55 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73009 2 S-71660-Rev. B, 06-Aug-07

New Product SUD50P04-13L Vishay Siliconix TYPICAL CHARACTERISTICS 25°C unless noted 100 100 VGS = 10 thru 5 V 80 80 A) Current ( 60 4 V urrent (A) 60 n C Drai 40 ain 40 - ID - DrD TC = 125 °C 20 I 20 2 V 25 °C 3 V - 55 °C 0 0 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 80 0.05 TC = - 55 °C 70 S) Ω) 0.04 ductance ( 5600 25 °C sistance ( 0.03 n e o R - Transc 3400 125 °C - On-n) 0.02 VGS = 4.5 V gfs 20 DS(o VGS = 10 V r 0.01 10 0 0.00 0 10 20 30 40 50 0 20 40 60 80 100 VGS- Gate-to-Source Voltage (V) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 5000 10 4500 4000 e (V) 8 VIDD =S 5=0 2 A0 V F) 3500 Ciss ag e (p 3000 Volt 6 C- Capacitanc 122505000000 Gate-to-Source 4 - 1000 Coss GS 2 500 V Crss 0 0 0 8 16 24 32 40 0 8 16 24 32 40 48 56 64 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 73009 www.vishay.com S-71660-Rev. B, 06-Aug-07 3

New Product SUD50P04-13L Vishay Siliconix TYPICAL CHARACTERISTICS 25°C unless noted 1.8 100 VGS= 10 V 1.6 ID = 30 A − On-ResistanceNormalized) 11..24 urce Current (A) 10 TJ= 150 °C TJ= 25 °C S(on)( 1.0 - So rD IS 0.8 0.6 1 -50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 75 200 Limited by rDS(on) 100 10 µs 60 100 µs A) A) nt ( 45 nt ( 10 e e urr Limited By Package urr 1 ms C C Drain 30 Drain 11000 m mss -D -D 1 DC I I 15 TC = 25 °C Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 TC- Case Temperature (°C) VDS - Drain-to-Source Voltage (V) Maximum Avalanche Drain Current Safe Operating Area vs. Case Temperature 2 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 ctivmp ed Effeermal I 0.1 00..105 zh aliT m or 0.02 N Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1 K Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com Document Number: 73009 4 S-71660-Rev. B, 06-Aug-07

SUD50P04-13L Vishay Siliconix THERMAL RATINGS 2 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 ctivmp 0.1 ed Effeermal I 0.1 0.02 zh aliT 0.05 m or Single Pulse N 0.01 10-4 10-3 10-2 10-1 1 10 1 00 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73009 Document Number: 73009 www.vishay.com S-71660-Rev. B, 06-Aug-07 5

Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1