SUD50N06-09L Vishay Siliconix N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level FEATURES PRODUCT SUMMARY • 175 °C Junction Temperature VDS (V) RDS(on) () ID (A)a (cid:129) TrenchFET® Power MOSFET 0.0093 at VGS = 10 V 50 (cid:129) Material categorization: 60 0.0122 at VGS = 4.5 V 50 For definitions of compliance please see www.vishay.com/doc?99912 TO-252 D G Drain Connected to Tab G D S S Top View Ordering Information: N-Channel MOSFET SUD50N06-09L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted) C Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TTCC == 12050 ° °CC ID 5500a Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 50a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAS 125 mJ TC = 25 °C 136 Maximum Power Dissipation PD W TA = 25 °C 3b, 8.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t  10 sec 15 18 Maximum Junction-to-Ambienta Steady State RthJA 40 50 °C/W Maximum Junction-to-Case RthJC 0.85 1.1 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t  10 s. Document Number: 72004 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-0298-Rev. F, 11-Feb-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD50N06-09L Vishay Siliconix SPECIFICATIONS (T = 25°C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 2 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 µA VDS = 60 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V 50 A VGS = 10 V, ID = 20 A 0.0074 0.0093 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0160 Drain-Source On-State Resistanceb RDS(on)  VGS = 10 V, ID = 20 A, TJ = 175 °C 0.0200 VGS = 4.5 V, ID = 15 A 0.0122 Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 60 S Dynamic Input Capacitance Ciss 2650 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 470 pF Reverse Transfer Capacitance Crss 225 Total Gate Chargec Qg 47 70 Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 50 A 10 nC Gate-Drain Chargec Qgd 12 Turn-On Delay Timec td(on) 10 20 Rise Timec tr VDD = 30 V, RL = 0.6  15 25 ns Turn-Off Delay Timec td(off) ID  50 A, VGEN = 10 V, Rg = 2.5  35 50 Fall Timec tf 20 30 Source-Drain Diode Ratings and Characteristics (T = 25°C) C Pulsed Current ISM 100 A Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1 1.5 V Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/µs 45 100 ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 72004 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-0298-Rev. F, 11-Feb-13 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD50N06-09L Vishay Siliconix TYPICAL CHARACTERISTICS (25°C unless noted) 100 100 VGS = 10 thru 5 V 80 80 Current (A) 60 4 V Current (A) 60 Drain 40 Drain 40 - D - D I I TC = 125 °C 20 20 25 °C 2 V, 3 V -55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 120 0.015 TC = -55 °C 100 0.012 e (S) 25 °C VGS = 4.5 V c 80 n cta 0.009 VGS = 10 V du 125 °C n 60 o c s n 0.006 a - - Tr 40 S(on) gfs RD0.003 20 0 0.000 0 10 20 30 40 50 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 4000 10 3500 3000 ge (V) 8 IVDD =S 5=0 3 A0 V pF) Ciss olta ance (2500 urce V 6 cit2000 So pa o- Ca1500 e-t 4 C - Gat 1000 - S Coss VG 2 500 Crss 0 0 0 10 20 30 40 50 60 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72004 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-0298-Rev. F, 11-Feb-13 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD50N06-09L Vishay Siliconix TYPICAL CHARACTERISTICS (25°C unless noted) 2.5 100 VGS = 10 V ed) ID = 20 A aliz 2.0 stance(Norm 1.5 e Current (A) 10 TJ = 150 °C TJ = 25 °C Resi 1.0 ourc On- - S - n) IS S(o 0.5 D R 0.0 1 -50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: 72004 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-0298-Rev. F, 11-Feb-13 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD50N06-09L Vishay Siliconix THERMAL RATINGS 60 1000 Limited by RDS(on)* 50 100 10 µs 100 µs A) 40 A) nt ( nt ( 10 e e urr urr 1 ms n C 30 n C 10 ms Drai Drai 1 D10C0 ms - D 20 - D I I 0.1 TC = 25 °C 10 Single Pulse 0 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 TA - Ambient Temperature (°C) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Maximum Drain Current vs. Ambient Temperature Safe Operating Area 2 1 Duty Cycle = 0.5 nt e e Transiedance 00.2.1 ed Effectivermal Imp 0.1 0.05 zh aliT 0.02 m Nor Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72004. Document Number: 72004 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-0298-Rev. F, 11-Feb-13 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E A MILLIMETERS INCHES C2 b3 DIM. MIN. MAX. MIN. MAX. 3 A 2.18 2.38 0.086 0.094 L A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 D b3 4.95 5.46 0.195 0.215 H C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 L4 5 D 5.97 6.22 0.235 0.245 L L m) D1 4.10 - 0.161 - m 5 E 6.35 6.73 0.250 0.265 0. b b2 ght ( C E1 4.32 - 0.170 - e ei H 9.40 10.41 0.370 0.410 h A1 e1 ne e 2.28 BSC 0.090 BSC a pl e1 4.56 BSC 0.180 BSC e g a L 1.40 1.78 0.055 0.070 g L3 0.89 1.27 0.035 0.050 1 D L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 E1 Notes • Dimension L3 is for reference only. Revision: 16-May-16 1 Document Number: 71197 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 (5.690) 3 0) 4 8 2 1 0. 6. ( 0.420 10.668) ( 7 2) 8 0 0 2 0. 2. ( 0 6) 9 8 0 2 0. 2. ( 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index A P P L I C A T I O N N O T E Document Number: 72594 www.vishay.com Revision: 21-Jan-08 3

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