SUD45P03-09 Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 V (V) R (Ω) I (A) Q (Typ.) DS DS(on) D g Definition - 30 0.0087 at VGS = - 10 V - 45d 60 (cid:129) TrenchFET® Power MOSFET 0.0150 at VGS = - 4.5 V - 32 (cid:129) 100 % R and UIS Tested g (cid:129) Compliant to RoHS Directive 2002/95/EC APPLICATIONS (cid:129) Power Switch (cid:129) Load Switch in High Current Applications (cid:129) DC/DC Converters TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information: SUD45P03-09-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 TC = 25 °C - 45d Continuous Drain Current (T = 150 °C) I J D TC = 70 °C - 42.5 A Pulsed Drain Current IDM - 100 Avalanche Current IAS - 35 Single Avalanche Energya L = 0.1 mH EAS 61 mJ TC = 25 °C 41.7b Maximum Power Dissipationa T = 25 °Cc PD 2.1 W A Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c RthJA 60 °C/W Junction-to-Case (Drain) RthJC 3 Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 65595 www.vishay.com S10-0460-Rev. B, 22-Feb-10 1

SUD45P03-09 Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA VDS = - 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V, TJ = 125 °C 50 µA VDS = - 30 V, VGS = 0 V, TJ = 150 °C 250 On-State Drain Currenta ID(on) VDS ≤ - 10 V, VGS = - 10 V - 50 A VGS = - 10 V, ID = - 20 A 0.0072 0.0087 Drain-Source On-State Resistancea RDS(on) Ω VGS = - 4.5 V, ID = - 15 A 0.0125 0.0150 Forward Transconductancea gfs VDS = - 15 V, ID = - 20 A 45 S Dynamicb Input Capacitance Ciss 2700 Output Capacitance Coss VGS = 0 V, VDS = - 15 V, f = 1 MHz 515 pF Reverse Transfer Capacitance Crss 445 Total Gate Chargec Qg 60 90 Gate-Source Chargec Qgs VDS = - 15 V, VGS = - 10 V, ID = - 20 A 9.3 nC Gate-Drain Chargec Qgd 15 Gate Resistance Rg f = 1 MHz 0.5 2.5 5 Ω Turn-On Delay Timec td(on) 12 20 Rise Timec tr VDD = - 15 V, RL = 1.5 Ω 11 20 ns Turn-Off Delay Timec td(off) ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 40 60 Fall Timec tf 12 20 Drain-Source Body Diode Ratings and Characteristics T = 25°Cb C Continuous Current IS - 45 A Pulsed Current ISM - 100 Forward Voltagea VSD IF = - 10 A, VGS = 0 V - 0.8 - 1.5 V Reverse Recovery Time trr 27 40 ns Peak Reverse Recovery Current IRM(REC) IF = - 10 A, dI/dt = 100 A/µs 1.3 2 A Reverse Recovery Charge Qrr 20 30 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65595 2 S10-0460-Rev. B, 22-Feb-10

SUD45P03-09 Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 0.020 VGS=10Vthru5V 80 Ω() 0.015 (A) nce VGS=4.5V urrent 60 VGS=4V esista C R 0.010 n n- Drai 40 - O VGS=10V - ID DS(on) 0.005 R 20 VGS=3V 0 0.000 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 VDS-Drain-to-SourceVoltage(V) ID-DrainCurrent(A) Output Characteristics On-Resistance vs. Drain Current 5 0.05 4 0.04 Ω) A) e( nt( anc Curre 3 Resist 0.03 ain On- Dr 2 - 0.02 - ID TC=25 °C S(on) TJ=150 °C D R 1 0.01 TC=125 °C TJ=25 °C 0 TC=-55 °C 0.00 0 1 2 3 4 2 4 6 8 10 VGS-Gate-to-SourceVoltage(V) VGS-Gate-to-SourceVoltage(V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 75 10 ID=20A S) 60 TC=- 55 °C e(V) 8 ctance ( 45 TC=25 °C eVoltag 6 VDS=15V - Transcondu 30 TC=125 °C Gate-to-Sourc 4 VDS=8V VDS=24V gfs - S 15 G 2 V 0 0 0 10 20 30 40 50 0 20 40 60 80 ID-DrainCurrent(A) Qg-TotalGateCharge(nC) Transconductance Gate Charge Document Number: 65595 www.vishay.com S10-0460-Rev. B, 22-Feb-10 3

SUD45P03-09 Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 - 1.0 - 1.3 (A) 10 TJ=150 °C nt ceCurre (V)S(th) - 1.6 ID=250 µA Sour TJ=25 °C VG - 1 S I - 1.9 0.1 - 2.2 0.0 0.3 0.6 0.9 1.2 - 50 - 25 0 25 50 75 100 125 150 VSD-Source-to-DrainVoltage(V) TJ-Temperature(°C) Source-Drain Diode Forward Voltage Threshold Voltage 4000 - 33 ID=250 µA V) ( 3000 Ciss ge - 34 (pF) Volta Capacitance 2000 n-to-Source - 35 C - Drai 1000 Coss -S - 36 Crss VD 0 - 37 0 5 10 15 20 25 30 - 50 - 25 0 25 50 75 100 125 150 VDS-Drain-to-SourceVoltage(V) TJ-JunctionTemperature(°C) Capacitance Drain Source Breakdown vs. Junction Temperature 1.8 60 ID=20A VGS=10V 1.5 45 - On-Resistancen)(Normalized) 1.2 VGS=4.5V DrainCurrent(A) 30 PackageLimited S(o -D RD 0.9 I 15 0.6 0 - 50 - 25 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TJ-JunctionTemperature(°C) TC-CaseTemperature(°C) On-Resistance vs. Junction Temperature Current Derating www.vishay.com Document Number: 65595 4 S10-0460-Rev. B, 22-Feb-10

SUD45P03-09 Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 100 1000 LimitedbyRDS(on)* 100 100µA A) ( (A)V 10 TJ= 150 °C TJ= 25 °C Current 10 1ms A n 10ms,100ms D ai 1s,10s,DC I Dr 1 - D I 0.1 TA=25 °C SinglePulse BVDSS Limited 1 0.01 10-5 10-4 10-3 10-2 10-1 1 0.1 1 10 100 Time (s) VDS-Drain-to-SourceVoltage(V) Single Pulse Avalanche Current Capability vs. Time *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area 2 1 Duty Cycle = 0.5 nt e ctive Transimpedance 00..12 ed Effeermal I 0.1 0.02 zh aliT 0.05 m or Single Pulse N 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65595. Document Number: 65595 www.vishay.com S10-0460-Rev. B, 22-Feb-10 5

Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E A MILLIMETERS INCHES C2 b3 DIM. MIN. MAX. MIN. MAX. 3 A 2.18 2.38 0.086 0.094 L A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 D b3 4.95 5.46 0.195 0.215 H C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 L4 5 D 5.97 6.22 0.235 0.245 L L m) D1 4.10 - 0.161 - m 5 E 6.35 6.73 0.250 0.265 0. b b2 ght ( C E1 4.32 - 0.170 - e ei H 9.40 10.41 0.370 0.410 h A1 e1 ne e 2.28 BSC 0.090 BSC a pl e1 4.56 BSC 0.180 BSC e g a L 1.40 1.78 0.055 0.070 g L3 0.89 1.27 0.035 0.050 1 D L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 E1 Notes • Dimension L3 is for reference only. Revision: 16-May-16 1 Document Number: 71197 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 (5.690) 3 0) 4 8 2 1 0. 6. ( 0.420 10.668) ( 7 2) 8 0 0 2 0. 2. ( 0 6) 9 8 0 2 0. 2. ( 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index A P P L I C A T I O N N O T E Document Number: 72594 www.vishay.com Revision: 21-Jan-08 3

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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