SUD35N10-26P www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET V (V) R (Ω) I (A) a Q (TYP.) DS DS(on) D g • 100 % UIS tested 0.0260 at V = 10 V 35 GS 100 31 nC • Material categorization: 0.0375 at V = 7 V 31 GS for definitions of compliance please see www.vishay.com/doc?99912 TTOO-252 APPLICATIONS Drain connected to tab • Primary side switch D G S D G N-Channel MOSFET Top View S Ordering Information: SUD35N10-26P-E3 (lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V ± 20 GS T = 25 °C 35 C T = 70 °C 32 C Continuous Drain Current (T = 175 °C) I J T = 25 °C D 12 b, c A T = 70 °C 10 b, c A A Pulsed Drain Current I 40 DM T = 25 °C 50 e C Continuous Source-Drain Diode Current I T = 25 °C S 6.9 b, c A Avalanche Current Pulse I 33 AS L = 0.1 mH Single Pulse Avalanche Energy E 55 mJ AS T = 25 °C 83 C T = 70 °C 58 C Maximum Power Dissipation P W T = 25 °C D 8.3 b, c A T = 70 °C 5.8 b, c A Operating Junction and Storage Temperature Range T , T -55 to +175 °C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, d t ≤ 10 s R 15 18 thJA °C/W Maximum Junction-to-Case Steady State R 1.5 1.8 thJC Notes a. Based on T = 25 °C. C b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 50 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. S15-1599-Rev. B, 06-Jul-15 1 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD35N10-26P www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 μA 100 - - V DS GS D V Temperature Coefficient ΔV /T - 165 - DS DS J I = 250 μA mV/°C V Temperature Coefficient ΔV /T D - -11 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 μA 2.5 - 4.4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = ± 20 V - - ± 100 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I μA DSS V = 100 V, V = 0 V, T = 55 °C - - 10 DS GS J On-State Drain Current a I V ≥ 5 V, V = 10 V 40 - - A D(on) DS GS V = 10 V, I = 12 A - 0.0210 0.0260 Drain-Source On-State Resistance a R GS D Ω DS(on) V = 7 V, I = 8 A - 0.0285 0.0375 GS D Forward Transconductance a g V = 15 V, I = 12 A - 25 - S fs DS D Dynamic b Input Capacitance C - 2000 - iss Output Capacitance C V = 12 V, V = 0 V, f = 1 MHz - 180 - pF oss DS GS Reverse Transfer Capacitance C - 60 - rss Total Gate Charge Q - 31 47 g Gate-Source Charge Q V = 50 V, V = 10 V, I = 12 A - 10 - nC gs DS GS D Gate-Drain Charge Q - 9 - gd Gate Resistance R f = 1 MHz - 1.5 - Ω g Turn-On Delay Time t - 10 15 d(on) RTuisren -TOimff eDelay Time tdt(orff) ID ≅ 10V DAD, =V G5E0N V=, 1R0L V=, 5R Ωg = 1 Ω -- 1105 1255 ns Fall Time t - 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 °C - - 50 S C A Pulse Diode Forward Current a I - - 40 SM Body Diode Voltage V I = 10 A - 0.8 1.2 V SD S Body Diode Reverse Recovery Time t - 50 75 ns rr Body Diode Reverse Recovery Charge Q - 100 150 nC rr I = 10 A, di/dt = 100 A/μs, T = 25 °C F J Reverse Recovery Fall Time t - 38 - a ns Reverse Recovery Rise Time t - 12 - b Note a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1599-Rev. B, 06-Jul-15 2 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD35N10-26P www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 TC=-55 °C VGS=10Vthru7V 8 30 ent (A) VGS=6V nt (A) 6 TC=25 °C Curr 20 urre I- Drain D - Drain CD 4 TC=125 °C 10 I 2 VGS=4V VGS=5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 VDS- Drain-to-Source Voltage (V) VGS-Gate-to-SourceVoltage(V) Output Characteristics Transfer Characteristics 0.023 2500 Ω) 2000 Ciss stance ( 0.022 e (pF) 1500 - On-ResiS(on)0.021 VGS=10V C - Capacitanc 1000 D R 500 Coss Crss 0.020 0 0 10 20 30 40 0 20 40 60 80 100 ID-DrainCurrent(A) VDS- Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.2 ID=12A e(V) 8 ID=12A VDS=50V alized) 12..80 VGS=10V g m olta Nor 1.6 e-to-SourceV 46 VDS=80V (Resistance 11..24 at n- 1.0 G O - - GS 2 on) 0.8 V S( D R 0.6 0 0.4 0 5 10 15 20 25 30 35 - 50 - 25 0 25 50 75 100 125 150 175 Qg-TotalGateCharge(nC) TJ-JunctionTemperature(°C) Gate Charge On-Resistance vs. Junction Temperature S15-1599-Rev. B, 06-Jul-15 3 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD35N10-26P www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.08 ID=12A Ω) 0.06 A) e( nt ( anc TA=125 °C ource Curre 10 TJ=150 °C - On-Resist 0.04 TA=25 °C - SS S(on) I D 0.02 TJ=25 °C R 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 4 5 6 7 8 9 10 VSD-Source-to-DrainVoltage(V) VGS-Gate-to-SourceVoltage(V) Source-Drain Diode Forward Voltage R vs. V vs. Temperature DS(on) GS 4.5 200 4.0 ID=250 µA 150 3.5 V) W) ( ( S(th) 3.0 wer 100 G o V P 2.5 50 2.0 1.5 0 - 50 - 25 0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000 TJ-Temperature(°C) Time(s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 LimitedbyRDS(on)* 100µs 10 A) ( ent 1ms urr C 1 10ms n ai Dr 100ms - D 1s I 0.1 10s TA=25 °C BVDSS DC SinglePulse Limited 0.01 0.1 1 10 100 VDS-Drain-to-SourceVoltage(V) *VGS>minimumVGSatwhichRDS(on)isspecified Safe Operating Area S15-1599-Rev. B, 06-Jul-15 4 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD35N10-26P www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 80 30 60 A) W) Current( 20 sipation ( 40 ain Dis Dr er - w ID 10 Po 20 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC-CaseTemperature(°C) TC-CaseTemperature(°C) Current Derating a Power Derating Note a. The power dissipation P is based on T (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-1599-Rev. B, 06-Jul-15 5 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD35N10-26P www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 DutyCycle=0.5 nt e Transiance 0.2 ctivemped 0.1 0.1 Notes: eI Effmal PDM eder 0.05 alizTh t1 Norm 0.02 1.DutyCyclet,2D= tt12 2.PerUnitBase=RthJA=40 °C/W 3.TJM- TA=PDMZthJA(t) SinglePulse 4.SurfaceMounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 DutyCycle=0.5 nt e 0.2 ctiveTransimpedance 0.1 eI 0.1 edEffermal 0.05 zh aliT 0.02 m Nor SinglePulse 0.01 10-4 10-3 10-2 10-1 1 10 SquareWavePulseDuration(s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69796. S15-1599-Rev. B, 06-Jul-15 6 Document Number: 69796 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline VERSION 1: FACILITY CODE = Y E A C2 b3 3 L 1 D D H E1 4 L 5 L L m) m 5 0. b b2 ght ( C e ei h A1 e1 e n a pl e g a g MILLIMETERS DIM. MIN. MAX. A 2.18 2.38 A1 - 0.127 b 0.64 0.88 b2 0.76 1.14 b3 4.95 5.46 C 0.46 0.61 C2 0.46 0.89 D 5.97 6.22 D1 4.10 - E 6.35 6.73 E1 4.32 - H 9.40 10.41 e 2.28 BSC e1 4.56 BSC L 1.40 1.78 L3 0.89 1.27 L4 - 1.02 L5 1.01 1.52 Note • Dimension L3 is for reference only Revision: 16-Dec-2019 1 Document Number: 71197 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N e E A b3 E1 e c2 E1/2 θ θ 3 1 L D D H 6 L 5 L 4 L 2x b2 2x e 3x b DETAIL "B" (b) 0.25 C A B c (3°) (3°) 1 H c C b1 GAUGE PLANE SEATING DETAIL "B" C C L PLANE L2 (L1) θ A1 MILLIMETERS MILLIMETERS DIM. MIN. MAX. DIM. MIN. MAX. A 2.18 2.39 L 1.50 1.78 A1 - 0.13 L1 2.74 ref. b 0.65 0.89 L2 0.51 BSC b1 0.64 0.79 L3 0.89 1.27 b2 0.76 1.13 L4 - 1.02 b3 4.95 5.46 L5 1.14 1.49 c 0.46 0.61 L6 0.65 0.85 c1 0.41 0.56  0° 10° c2 0.46 0.60 1 0° 15° D 5.97 6.22 2 25° 35° D1 5.21 - Notes E 6.35 6.73 • Dimensioning and tolerance confirm to ASME Y14.5M-1994 • All dimensions are in millimeters. Angles are in degrees E1 4.32 - • Heat sink side flash is max. 0.8 mm e 2.29 BSC • Radius on terminal is optional H 9.94 10.34 ECN: E19-0649-Rev. Q, 16-Dec-2019 DWG: 5347 Revision: 16-Dec-2019 2 Document Number: 71197 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 (5.690) 3 0) 4 8 2 1 0. 6. ( 0.420 10.668) ( 7 2) 8 0 0 2 0. 2. ( 0 6) 9 8 0 2 0. 2. ( 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index A P P L I C A T I O N N O T E Document Number: 72594 www.vishay.com Revision: 21-Jan-08 3

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