SUD19P06-60 Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A)d Qg (Typ) Definition 0.060 at VGS = - 10 V - 19 (cid:129) TrenchFET® Power MOSFET - 60 26 0.077 at VGS = - 4.5 V - 16.8 (cid:129) 100 % UIS Tested (cid:129) Compliant to RoHS Directive 2002/95/EC APPLICATIONS (cid:129) High Side Switch for Full Bridge Converter (cid:129) DC/DC Converter for LCD Display TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free) P-Channel MOSFET SUD19P06-60-GE3 (Lead (Pb)-free and Halogen free) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise note) A Parameter Symbol Limit Unit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 TC = 25 °C - 18.3 Continuous Drain Current (T = 150 °C) I J D TC = 125 °C - 8.19 A Pulsed Drain Current IDM - 30 Avalanche Current, Single Pulse IAS - 22 L = 0.1 mH Repetitive Avalanche Energy, Single Pulsea EAS 24.2 mJ TC = 25 °C 38.5c Power Dissipation PD W TA = 25 °C 2.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t  10 s 17 21 Maximum Junction-to-Ambientb RthJA Steady State 45 55 °C/W Maximum Junction-to-Case RthJC 2.7 3.25 Notes: a. Duty cycle 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Based up on T = 25 °C. C Document Number: 69253 www.vishay.com S11-2132 Rev. B, 31-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD19P06-60 Vishay Siliconix SPECIFICATIONS (T = 25 °C, unless otherwise note) J Parameter Symbol Test Conditions Min . Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 µA VDS = - 60 V, VGS = 0 V, TJ = 150 ° C - 125 On-State Drain Currenta ID(on) VDS  - 5 V, VGS = - 10 V - 30 A VGS = - 10 V, ID = - 10 A 0.048 0.060 VGS = - 10 V, ID = - 10 A, TJ = 125 °C 0.102 Drain-Source On-State Resistancea RDS(on)  VGS = - 10 V, ID = - 10 A, TJ = 150 °C 0.120 VGS = - 4.5 V, ID = - 5 A 0.061 0.077 Forward Transconductancea gfs VDS = - 15 V, ID = - 10 A 22 S Dynamicb Input Capacitance Ciss 1140 1710 Output Capacitance Coss VGS = 0 V, VDS = - 25 V, f = 1 MHz 130 pF Reverse Transfer Capacitance Crss 90 Total Gate Chargec Qg 26 40 Gate-Source Chargec Qgs VDS = - 30 V, VGS = - 10 V, ID = - 10 A 4.5 nC Gate-Drain Chargec Qgd 7 Gate Resistance Rg f = 1 MHz 7  Turn-On Delay Timec td(on) 8 15 Rise Timec tr VDD = - 30 V, RL = 3  9 15 ns Turn-Off Delay Timec td(off) ID  - 19 A, VGEN = - 10 V, Rg = 2.5  65 100 Fall Timec tf 30 45 Drain-Source Body Diode and Characteristics (T = 25 °C)b C Continuous Current IS - 30 A Pulsed Current ISM - 30 Forward Voltagea VSD IF = - 19 A, VGS = 0 V - 1 - 1.5 V Reverse Recovery Time trr IF = - 19 A, di/dt = 100 A/µs 41 61 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69253 2 S11-2132 Rev. B, 31-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD19P06-60 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 30 VGS = 10 thru 5 V 25 4 V 25 Current (A) 1250 Current (A) 1250 Drain Drain - 10 - 10 ID ID TC = 125 °C 3 V 5 5 25 °C - 55 °C 0 0 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 35 0.12 30 TC = - 55 °C 0.10 S) 25 °C Ω) e ( 25 e ( nc nc 0.08 a a duct 20 125 °C esist VGS = 4.5 V n R 0.06 co n- VGS = 10 V s 15 O - Tranfs 10 - S(on) 0.04 g D R 0.02 5 0 0.00 0 5 10 15 20 25 30 0 5 10 15 20 25 30 VGS- Gate-to-Source Voltage (V) ID- Drain Current (A) Transconductance On-Resistance vs. Drain Current 1800 20 nce (pF) 11250000 Ciss e Voltage (V) 1126 IVDD =S 1=0 3 A0 V a c pacit 900 Sour C- Ca 600 Gate-to- 8 - S 4 300 Coss VG Crss 0 0 0 10 20 30 40 50 60 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 69253 www.vishay.com S11-2132 Rev. B, 31-Oct-11 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD19P06-60 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 1.9 d) ID = 10 A e z ali 1.6 VGS= 10 V A) sistance(norm 1.3 ource Current ( 10 TJ= 150 °C TJ= 25 °C e S n-R 1.0 - O S - I on) 0.7 S( D R 0.4 1 - 50 - 25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 25 100 Limited by rDS(on)* 20 10 100 ms 1 s A) A) Current ( 15 Current ( 1 1D0C s - Drain 10 - Drain 0.1 BVDSS Limited D D I I 5 0.01 TC = 25 °C Single Pulse 0 0.001 0 25 50 75 100 125 150 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) TC - Case Temperature (°C) * VGS minimum VGS at which rDS(on)isspecified Maximum Drain Current Safe Operating Area vs. Case Temperature 2 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 zed Effectivhermal Imp 0.1 00..105 aliT m Nor 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com Document Number: 69253 4 S11-2132 Rev. B, 31-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD19P06-60 Vishay Siliconix THERMAL RATINGS 2 1 Duty Cycle = 0.5 nt e e Transiedance 00..21 ctivmp ed Effeermal I 0.1 0.05 zh aliT 0.02 m or Single Pulse N 0.01 10-4 10-3 10-2 10-1 1 10 100 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69253. Document Number: 69253 www.vishay.com S11-2132 Rev. B, 31-Oct-11 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E A MILLIMETERS INCHES C2 b3 DIM. MIN. MAX. MIN. MAX. 3 A 2.18 2.38 0.086 0.094 L A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 D b3 4.95 5.46 0.195 0.215 H C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 L4 5 D 5.97 6.22 0.235 0.245 L L m) D1 4.10 - 0.161 - m 5 E 6.35 6.73 0.250 0.265 0. b b2 ght ( C E1 4.32 - 0.170 - e ei H 9.40 10.41 0.370 0.410 h A1 e1 ne e 2.28 BSC 0.090 BSC a pl e1 4.56 BSC 0.180 BSC e g a L 1.40 1.78 0.055 0.070 g L3 0.89 1.27 0.035 0.050 1 D L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 E1 Notes • Dimension L3 is for reference only. Revision: 16-May-16 1 Document Number: 71197 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 (5.690) 3 0) 4 8 2 1 0. 6. ( 0.420 10.668) ( 7 2) 8 0 0 2 0. 2. ( 0 6) 9 8 0 2 0. 2. ( 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index A P P L I C A T I O N N O T E Document Number: 72594 www.vishay.com Revision: 21-Jan-08 3

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