STY60NK30Z Ω N-CHANNEL 300V - 0.033 - 60A Max247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STY60NK30Z 300V <0.045Ω 60A 450W TYPICALR (on)=0.033Ω (cid:1) DS EXTREMELY HIGHdv/dtCAPABILITY (cid:1) 100% AVALANCHE TESTED (cid:1) GATECHARGE MINIMIZED (cid:1) VERYLOWINTRINSICCAPACITANCES (cid:1) VERYGOODMANUFACTURING 3 (cid:1) 2 REPEATIBILITY 1 Max247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- basedPowerMESH™layout.Inadditiontopushing on-resistancesignificantlydown,specialcareistak- en to ensure a very good dv/dt capability for the INTERNALSCHEMATICDIAGRAM most demanding applications. Such seriescomple- ments ST full range of high voltage MOSFETs in- cludingrevolutionaryMDmesh™products. APPLICATIONS HIGHCURRENT,HIGHEFFICIENCY (cid:1) SWITCHINGDC/DCCONVETERSFOR PLASMATV’s IDEALFOROFF-LINE POWERSUPPLIES, (cid:1) ADAPTORS ANDPFC ORDERINGINFORMATION SALESTYPE MARKING PACKAGE PACKAGING STY60NK30Z Y60NK30Z Max247 TUBE February2004 1/8

STY60NK30Z ABSOLUTEMAXIMUMRATINGS Symbol Parameter Value Unit VDS Drain-sourceVoltage(VGS=0) 300 V VDGR Drain-gateVoltage(RGS=20kΩ) 300 V VGS Gate-sourceVoltage ±30 V ID DrainCurrent(continuous)atTC=25°C 60 A ID DrainCurrent(continuous)atTC=100°C 37.5 A IDM((cid:1)) DrainCurrent(pulsed) 240 A PTOT TotalDissipationatTC=25°C 450 W DeratingFactor 3.57 W/°C VESD(G-S) GatesourceESD(HBM-C=100pF,R=1.5KΩ) 6000 V dv/dt(1) PeakDiodeRecoveryvoltageslope 4.5 V/ns Tj OperatingJunctionTemperature -55to150 °C Tstg StorageTemperature (cid:1) ( )Pulsewidthlimitedbysafeoperatingarea (1)ISD≤60A,di/dt≤200A/µs,VDD≤V(BR)DSS,Tj≤TJMAX. THERMALDATA Rthj-case ThermalResistanceJunction-caseMax 0.28 °C/W Rthj-amb ThermalResistanceJunction-ambientMax 30 °C/W Tl MaximumLeadTemperatureForSolderingPurpose 300 °C AVALANCHE CHARACTERISTICS Symbol Parameter MaxValue Unit IAR AvalancheCurrent,RepetitiveorNot-Repetitive 60 A (pulsewidthlimitedbyTjmax) EAS SinglePulseAvalancheEnergy 0.7 J (startingTj=25°C,ID=IAR,VDD=50V) GATE-SOURCEZENERDIODE Symbol Parameter TestConditions Min. Typ. Max. Unit BVGSO Gate-SourceBreakdown Igs=±1mA(OpenDrain) 30 V Voltage PROTECTIONFEATURESOFGATE-TO-SOURCE ZENERDIODES Thebuilt-inback-to-backZenerdiodeshavespecificallybeendesignedtoenhancenotonlythedevice’s ESDcapability,butalsotomakethemsafelyabsorbpossiblevoltagetransientsthatmayoccasionallybe appliedfromgatetosource.InthisrespecttheZenervoltageisappropriatetoachieveanefficientand cost-effectiveinterventiontoprotect thedevice’sintegrity.TheseintegratedZenerdiodesthusavoidthe usageofexternalcomponents. 2/8

STY60NK30Z ELECTRICALCHARACTERISTICS (TCASE =25°CUNLESSOTHERWISESPECIFIED) ON/OFF Symbol Parameter TestConditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID=1mA,VGS=0 300 V BreakdownVoltage IDSS ZeroGateVoltage VDS=MaxRating 1 µA DrainCurrent(VGS=0) VDS=MaxRating,TC=125°C 50 µA IGSS Gate-bodyLeakage VGS=±20V ±10 µA Current(VDS=0) VGS(th) GateThresholdVoltage VDS=VGS,ID=100µA 3 3.75 4.5 V RDS(on) StaticDrain-sourceOn VGS=10V,ID=30A 0.033 0.045 Ω Resistance DYNAMIC Symbol Parameter TestConditions Min. Typ. Max. Unit gfs(1) ForwardTransconductance VDS=15V,ID=30A 29 S Ciss InputCapacitance VDS=25V,f=1MHz,VGS=0 7200 pF Coss OutputCapacitance 1070 pF Crss ReverseTransfer 250 pF Capacitance Cosseq.(3) EquivalentOutput VGS=0V,VDS=0Vto240V 880 pF Capacitance SWITCHINGON Symbol Parameter TestConditions Min. Typ. Max. Unit td(on) Turn-onDelayTime VDD=150V,ID=30A 50 ns tr RiseTime RG=4.7Ω , VGS=10V 90 ns (ResistiveLoadsee,Figure3) Qg TotalGateCharge VDD=240V,ID=60A, 220 nC Qgs Gate-SourceCharge VGS=10V 46 nC Qgd Gate-DrainCharge 123 nC SWITCHINGOFF Symbol Parameter TestConditions Min. Typ. Max. Unit td(off) Turn-offDelayTime VDD=150V,ID=30A 150 ns tf FallTime RG=4.7Ω,VGS=10V 60 ns (ResistiveLoadsee,Figure3) tr(Voff) Off-voltageRiseTime VDD=240V,ID=60A, 40 ns tf FallTime RG=4.7Ω,VGS=10V 65 ns tc Cross-overTime (InductiveLoadsee,Figure5) 110 ns SOURCEDRAINDIODE Symbol Parameter TestConditions Min. Typ. Max. Unit ISD Source-drainCurrent 60 A ISDM(2) Source-drainCurrent(pulsed) 240 A VSD(1) ForwardOnVoltage ISD=60A,VGS=0 1.6 V trr ReverseRecoveryTime ISD=60A,di/dt=100A/µs 475 ns Qrr ReverseRecoveryCharge VR=100V,Tj=150°C 6.4 µC IRRM ReverseRecoveryCurrent (seetestcircuit,Figure5) 27 A Note: 1. Pulsed:Pulseduration=300µs,dutycycle1.5%. 2. Pulsewidthlimitedbysafeoperatingarea. 3. Cosseq.isdefinedasaconstantequivalentcapacitancegivingthesamechargingtimeasCosswhenVDSincreasesfrom0to80% VDSS. 3/8

STY60NK30Z SafeOperatingArea ThermalImpedance OutputCharacteristics TransferCharacteristics Transconductance StaticDrain-sourceOnResistance 4/8

STY60NK30Z GateChargevsGate-sourceVoltage CapacitanceVariations NormalizedGateTheresholdVoltagevsTemp. NormalizedOnResistancevsTemperature Source-drainDiodeForwardCharacteristics 5/8

STY60NK30Z Fig.1:UnclampedInductiveLoadTestCircuit Fig.2:UnclampedInductiveWaveform Fig.3:SwitchingTimesTestCircuitFor Fig.4:GateChargetestCircuit ResistiveLoad Fig.5:Test CircuitForInductiveLoadSwitching AndDiodeRecoveryTimes 6/8

STY60NK30Z Max247 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 P025Q 7/8

STY60NK30Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8

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