STY145N65M5 N-channel 650 V, 0.012 Ω typ., 138 A MDmesh™ M5 Power MOSFET in a Max247 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID STY145N65M5 710 V 0.015 Ω 138 A • Extremely low R DS(on) • Low gate charge and input capacitance • Excellent switching performance 3 • 100% avalanche tested 2 1 Applications Max247 • Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well- known PowerMESH™ horizontal layout. The resulting product offers extremely low on- resistance, making it particularly suitable for applications requiring high power and superior efficiency. Table 1: Device summary Order code Marking Package Packaging STY145N65M5 145N65M5 Max247 Tube November 2015 DocID023718 Rev 3 1/12 This is information on a product in full production. www.st.com

Contents STY145N65M5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 Max247 package information ............................................................ 9 5 Revision history ............................................................................ 11 2/12 DocID023718 Rev 3

STY145N65M5 Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 138 A ID Drain current (continuous) at TC = 100 °C 87 A IDM(1) Drain current (pulsed) 552 A PTOT Total dissipation at TC = 25 °C 625 W Avalanche current, repetitive or not repetitive (pulse width IAR limited by Tjmax) 12 A EAS VSDinDg =le 5 p0u Vls)e avalanche energy (starting Tj = 25 °C, ID = IAR, 2420 mJ dv/dt(2) Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 Notes: (1)Pulse width limited by safe operating area. (2)ISD ≤ 138 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.2 °C/W Rthj-amb Thermal resistance junction-ambient max 30 °C/W DocID023718 Rev 3 3/12

Electrical characteristics STY145N65M5 2 Electrical characteristics T = 25 °C unless otherwise specified C Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS voltage VGS = 0 V, ID = 1 mA 650 V VGS = 0 V, VDS = 650 V 10 µA Zero gate voltage drain IDSS current VGS = 0 V, VDS = 650 V, 100 µA TC = 125 °C IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V Static drain-source RDS(on) on-resistance VGS = 10 V, ID = 69 A 0.012 0.015 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance - 18500 - pF Coss Output capacitance VDS= 100 V, f = 1 MHz, - 413 - pF Reverse transfer VGS = 0 V Crss capacitance - 11 - pF Equivalent output Co(er)(1) capacitance energy - 415 - pF related VGS = 0, VDS = 0 to 520 V Co(tr)(2) Ecaqpuaivcaitlaennct eo utitmpuet related - 1950 - pF RG Intrinsic gate resistance f = 1 MHz, open drain - 0.7 - Ω Qg Total gate charge VDD = 520 V, ID = 69 A, - 414 - nC Qgs Gate-source charge V"TGeSs =t c1ir0c uVi t( sfoere g Faitgeu creh a1r5g:e - 114 - nC Qgd Gate-drain charge behavior") - 164 - nC Notes: (1) Co(er) is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS (2) Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 DocID023718 Rev 3

STY145N65M5 Electrical characteristics Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(V) Voltage delay time VDD = 400 V, ID = 85 A - 255 - ns tr(V) Voltage rise time RG = 4.7 Ω, VGS = 10 V - 11 - ns (see Figure 16: "Test circuit tf(i) Current fall time for inductive load switching - 82 - ns and diode recovery times" tC(off) Crossing time and Figure 19: "Switching - 88 - ns time waveform") Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 138 A ISDM,(1) Source-drain current (pulsed) - 552 A VSD (2) Forward on voltage VGS = 0 V, ISD = 138 A - 1.5 V trr Reverse recovery time ISD = 138 A, - 568 ns di/dt = 100 A/µs, Qrr Reverse recovery charge VDD = 100 V (see Figure - 14.5 µC 16: "Test circuit for IRRM Reverse recovery current inductive load switching - 51 A and diode recovery times") trr Reverse recovery time ISD = 138 A, - 728 ns di/dt = 100 A/µs, Qrr Reverse recovery charge VDD = 100 V, Tj = 150 °C - 24.5 µC (see Figure 16: "Test circuit IRRM Reverse recovery current for inductive load switching - 67 A and diode recovery times") Notes: (1)Pulse width is limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID023718 Rev 3 5/12

Electrical characteristics STY145N65M5 2.2 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance AM09125v1 K δ=0.5 0.2 0.1 0.05 10-1 0.02 0.01 Zth=kRthj-c d=tp/t Single pulse tp t 10-2 10-4 10-3 10-2 10-1 tp(s) Figure 4: Output characteristics Figure 5: Transfer characteristics AM17901v1 AM17902v1 ID(A) ID VGS=10V 9V (A) VDS=30V 300 300 8V 250 250 200 200 150 150 7V 100 100 50 50 6V 0 0 0 5 10 15 20 25 VDS(V) 0 1 2 3 4 5 6 7 8 VGS(V) Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance 6/12 DocID023718 Rev 3

STY145N65M5 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature C AM15553v1 VGS(th) AM08899v1 (pF) (norm) 1.10 100000 ID= 250µA VDS=VGS Ciss 10000 1.00 1000 0.90 Coss 100 f=1 MHz 0.80 10 Crss 1 0.70 0.1 1 10 100 VDS(V) -50 -25 0 25 50 75 100 TJ(°C) Figure 10: Normalized on-resistance vs Figure 11: Normalized V(BR)DSS vs temperature temperature RDS(on) AM08900v1 V(BR)DSS AM10399v1 (norm) (norm) 2.1 1.08 ID = 69A 1.06 ID = 1mA VGS= 10V 1.7 1.04 1.02 1.3 1.00 0.98 0.9 0.96 0.94 0.5 0.92 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 12: Output capacitance stored energy Figure 13: Switching losses vs gate resistance AM15555v1 E(µJ) 9000 VDD=400V Eon VGS=10V 8000 ID=85 A 7000 6000 5000 4000 Eoff 3000 2000 1000 0 0 10 20 30 40 RG(W) The previous figure E includes reverse recovery of a SiC diode. on DocID023718 Rev 3 7/12

Test circuits STY145N65M5 3 Test circuits Figure 14: Test circuit for resistive load Figure 15: Test circuit for gate charge switching times behavior Figure 16: Test circuit for inductive load Figure 17: Unclamped inductive load test switching and diode recovery times circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform ConceptwaveformforInductiveLoadTurn-off Id 90%Vds 90%Id Tdelay--ooffff Vgs 90%Vgs oonn Vgs(I(t)))) 10%Vds 10%Id Vds TTrriissee TTffaallll Tcross--over AM05540v2_for_M5 8/12 DocID023718 Rev 3

STY145N65M5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 Max247 package information Figure 20: Max247 package outline 0094330_Rev_D DocID023718 Rev 3 9/12

Package information STY145N65M5 Table 8: Max247 package mechanical data mm Dim. Min. Typ. Max. A 4.70 - 5.30 A1 2.20 - 2.60 b 1.00 - 1.40 b1 2.00 - 2.40 b2 3.00 - 3.40 c 0.40 - 0.80 D 19.70 - 20.30 e 5.35 - 5.55 E 15.30 - 15.90 L 14.20 - 15.20 L1 3.70 - 4.30 10/12 DocID023718 Rev 3

STY145N65M5 Revision history 5 Revision history Table 9: Document revision history Date Revision Changes 25-Sep-2012 1 First release. Modified: IAR and EAS values 17-Jan-2013 2 Modified: typical values on Table 5, 6 and 7 Updated title, features and description on cover page. Document status promoted from preliminary to production data. Modified: Table 2: "Absolute maximum ratings" and Table 3: "Thermal 13-Nov-2015 3 data" Updated: Figure 4: "Output characteristics" and Figure 5: "Transfer characteristics" Minor text changes. DocID023718 Rev 3 11/12

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