Product Data Sheet 5630 – Mid-Power LED Enabling the best lm/W in Mid Power Range Mid-Power LED - 5630 Series STW8Q14C (Cool, Neutral, Warm) RoHS Product Brief Description Features and Benefits • This White Colored surface-mount LED • The Best Efficacy in Mid Power LEDs comes in standard package dimension. • Market Standard 5630 Package Size Package Size: 5.6x3.0x0.75mm • High Color Quality, CRI Min. 80 • Wide CCT range 2600~7000K • It has a substrate made up of a molded • ANSI & MacAdam 3 Step compliant plastic reflector sitting on top of a lead • RoHS compliant frame. • The die is attached within the reflector cavity and the cavity is encapsulated by silicone. Key Applications • The package design coupled with • Interior lighting careful selection of component • General lighting materials allow these products to • Indoor and outdoor displays perform with high reliability. • Architectural / Decorative lighting Table 1. Product Selection Table CCT Part Number Color Min. Typ. Max. STW8Q14C Cool White 4700K 5600K 7000K STW8Q14C Neutral White 3700K 4200K 4700K STW8Q14C Warm White 2600K 3000K 3700K 1 Rev2.1 Nov ,2013 www.seoulsemicon.com

Product Data Sheet 5630 – Mid-Power LED Table of Contents Index • Product Brief • Table of Contents • Performance Characteristics • Color Bin Structure • Packaging Information • Product Nomenclature (Labeling Information) • Recommended Solder Pad • Reflow Soldering Characteristics • Handling of Silicone Resin for LEDs • Precaution For Use • Company Information 2 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Performance Characteristics Table 2. Electro Optical Characteristics, I =100mA , T = 25ºC, RH30% F j Luminous Intensity [2] Luminous Flux [3] CRI CCT (K) [1] Part Number RANK IV (cd) ФV (lm) Ra Typ. Min Max Min Max Min. U7 11.7 12.5 36.3 38.8 80 V5 12.5 13.5 38.8 41.9 80 6500 W5 13.5 14.5 41.9 45.0 80 X5 14.5 15.2 45.0 47.1 80 U7 11.7 12.5 36.3 38.8 80 V5 12.5 13.5 38.8 41.9 80 5600 W5 13.5 14.5 41.9 45.0 80 X5 14.5 15.2 45.0 47.1 80 U7 11.7 12.5 36.3 38.8 80 V5 12.5 13.5 38.8 41.9 80 5000 W5 13.5 14.5 41.9 45.0 80 X5 14.5 15.2 45.0 47.1 80 U7 11.7 12.5 35.7 38.1 80 V5 12.5 13.5 38.1 41.2 80 4500 W5 13.5 14.5 41.2 44.2 80 STW8Q14C X5 14.5 15.2 44.2 46.4 80 U7 11.7 12.5 35.7 38.1 80 V5 12.5 13.5 38.1 41.2 80 4000 W5 13.5 14.5 41.2 44.2 80 X5 14.5 15.2 44.2 46.4 80 U7 11.7 12.5 35.1 37.5 80 3500 V5 12.5 13.5 37.5 40.5 80 W5 13.5 14.5 40.5 43.5 80 U0 11 11.7 33.0 35.1 80 U7 11.7 12.5 35.1 37.5 80 3000 V5 12.5 13.5 37.5 40.5 80 W5 13.5 14.5 40.5 43.5 80 U0 11 11.7 33.0 35.1 80 U7 11.7 12.5 35.1 37.5 80 2700 V5 12.5 13.5 37.5 40.5 80 W5 13.5 14.5 40.5 43.5 80 Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. (2) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. (3) The lumen table is only for reference. 3 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Performance Characteristics Table 3. Absolute Maximum Ratings, I =100mA , T = 25ºC, RH30% F j Value Parameter Symbol Unit Min. Typ. Max. Forward Current I - 100 160 mA F Forward Voltage[1] V (100mA) 2.8 - 3.4 V F Reverse Voltage V - 0.9 1.2 V r 14 Luminous Intensity (5,000 K) [1] I (100mA) - - v (43) cd 12.7 (lm) Luminous Intensity (3,500 K) [1] I (100mA) - - v (38.1) Color Rendering Index [1] Ra 80 83 90 - Viewing Angle [2] 2Θ 120 1/2 Power Dissipation P - - 560 mW d Junction Temperature T - - 125 ºC j Operating Temperature T - 40 - + 85 ºC opr Storage Temperature T - 40 - + 100 ºC stg Thermal resistance (J to S) [3] Rθ - 18 - ℃/W J-S ESD Sensitivity(HBM) [4] - - - 5000 V Notes : (1) Tolerance : VF :±0.1V, IV :±7%, Ra :±2, x,y :±0.007 (2) Θ is the off-axis where the luminous intensity is 1/2 of the peak intensity 1/2 (3) Thermal resistance : Rth (Junction / solder) JS (4) A zener diode is included for ESD Protection. • LED’s properties might be different from suggested values like above and below tables if operation condition will be exceeded our parameter range. Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. • All measurements were made under the standardized environment of Seoul Semiconductor. 4 www.seoulsemicon.com Rev2.1, Nov ,2013

PPrroodduucctt DDaattaa SShheeeett 5630 – Mid-Power LED Relative Spectral Distribution Fig 1. Color Spectrum, I = 100mA, T = 25ºC, RH30% F j 2600~3700K 3700~4700K 4700~7000K 1.0 y sit n e nt n I o si s mi E0.5 e v ati el R 0.0 300 400 500 600 700 800 Wavelength [nm] Fig 2. Viewing Angle Distribution, I = 100mA F 0 1.01.0 30 0.80.8 0.60.6 60 0.40.4 0.20.2 0.000..00 90 -90 -60 -30 0 0.2 0.4 0.6 5 www.seoulsemicon.com Rev2.1, Nov ,2013 0.8 1.0

PPrroodduucctt DDaattaa SShheeeett 5630 – Mid-Power LED Forward Current Characteristics Fig 3. Forward Voltage vs. Forward Current , T = 25ºC j 0.15 0.10 ] A F[ I 0.05 0.00 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 VF[V] Fig 4. Forward Current vs. Relative Luminous Flux, T = 25ºC j 1.4 1.2 y sit en 1.0 nt s I u 0.8 o n mi u 0.6 L e v ati 0.4 el R 0.2 0.0 0 20 40 60 80 100 120 140 160 Forward Current I [mA] F 6 www.seoulsemicon.com Rev2.1, Nov ,2013

PPrroodduucctt DDaattaa SShheeeett 5630 – Mid-Power LED Forward Current Characteristics Fig 5. Forward Current vs. CIE X, Y Shift , T = 25ºC j (4200K~7000K) 0.354 0.352 0.350 20mA 60mA 0.348 y 100mA 0.346 160mA 0.344 0.342 0.340 0.341 0.342 0.343 0.344 0.345 0.346 0.347 x (2600K~4200K) 0.415 0.414 0.413 20mA 60mA 0.412 y 100mA 0.411 160mA 0.410 0.409 0.408 0.437 0.438 0.439 0.440 0.441 0.442 0.443 x 7 www.seoulsemicon.com Rev2.1, Nov ,2013

PPrroodduucctt DDaattaa SShheeeett 5630 – Mid-Power LED Junction Temperature Characteristics Fig 6. Relative Light Output vs. Junction Temperature, I = 100mA F 1.0 y t 0.8 si n e t n I s 0.6 u o n mi u L 0.4 e v ti a el R 0.2 0.0 30 45 60 75 90 105 120 O Junction temperature Tj( C) Fig 7. Junction Temperature vs. Relative Forward Voltage, I = 100mA F 1.0 e 0.8 g a t ol V d 0.6 r a w r o F 0.4 e v ti a el R 0.2 0.0 30 45 60 75 90 105 120 O Junction temperature Tj( C) 8 www.seoulsemicon.com Rev2.1, Nov ,2013

PPrroodduucctt DDaattaa SShheeeett 5630 – Mid-Power LED Junction Temperature Characteristics Fig 8. Chromaticity Coordinate vs. Junction Temperature, I = 100mA F (4200K~7000K) 0.315 0.310 25 0.305 40 60 y 0.300 80 100 0.295 120 0.290 0.285 0.290 0.295 0.300 0.305 0.310 x I = 100mA F (2600K~4200K) 0.410 0.405 25 0.400 40 60 y 0.395 80 100 120 0.390 0.385 0.380 0.415 0.420 0.425 0.430 0.435 x 9 www.seoulsemicon.com Rev2.1, Nov ,2013

PPrroodduucctt DDaattaa SShheeeett 5630 – Mid-Power LED Ambient Temperature Characteristics Fig 9. Maximum Forward Current vs. Ambient Temperature 200 180 160 A] 140 m [ Rth =100oC/W F 120 t I J-A n e r 100 r u C 80 d r a w 60 r o F 40 20 0 -40 -20 0 20 40 60 80 100 O Ambient temperature Ta( C) 10 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Color Bin Structure Table 4. Bin Code description Luminous Intensity (cd) Color Typical Forward @ I = 100mA Chromaticity Voltage (V) @ I = 100mA Part Number F f F Coordinate Bin Code Min. Max. @ I = 100mA Bin Code Min. Max. F U0 11.0 11.7 Y2 2.8 2.9 U7 11.7 12.5 Y3 2.9 3.0 V5 12.5 13.5 Z1 3.0 3.1 STW8Q14C Refer to page.12 W5 13.5 14.5 Z2 3.1 3.2 X5 14.5 15.2 Z3 3.2 3.3 J15 15.2 16 A1 3.3 3.4 Table 7. Intensity rank distribution CCT CIE IV Rank 6000 ~ 7000K A U0 U7 V5 W5 X5 5300 – 6000K B U0 U7 V5 W5 X5 4700 ~ 5300K C U0 U7 V5 W5 X5 4200 ~ 4700K D U0 U7 V5 W5 X5 3700 ~ 4200K E U0 U7 V5 W5 X5 3200 ~ 3700K F U0 U7 V5 W5 X5 2900 ~ 3200K G U0 U7 V5 W5 X5 2600 ~ 2900K H U0 U7 V5 W5 X5 Available ranks Not yet available ranks *Notes : (1) All measurements were made under the standardized environment of Seoul Semiconductor In order to ensure availability, single color rank will not be orderable. 11 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram, I = 100mA, T = 25ºC, F j 0.46 0.44 0.42 H G 0.40 F ) Y ( 0.38 E . d r o D o c 0.36 E C I C B 0.34 A 0.32 0.30 MACADAM 3STEP Rank 0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50 CIE coord.(X) *Notes : • Energy Star binning applied to all 2600~7000K. • Measurement Uncertainty of the Color Coordinates : ± 0.007 12 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Cool White), I = 100mA, T = 25ºC, F j 6000K 0.35 6500K A41 0.34 A31 A42 7000K A21 A32 A43 E Y0.33 A11 A22 A33 CI A44 A12 A23 A34 0.32 A13 A24 A14 0.31 0.300 0.305 0.310 0.315 0.320 0.325 CIE X A11 A21 A31 A41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3028 0.3304 0.3072 0.3349 0.3115 0.3393 0.3160 0.3437 0.3038 0.3256 0.3080 0.3299 0.3123 0.3342 0.3166 0.3384 0.3080 0.3299 0.3123 0.3342 0.3166 0.3384 0.3209 0.3426 0.3072 0.3349 0.3115 0.3393 0.3160 0.3437 0.3205 0.3481 A12 A22 A32 A42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3038 0.3256 0.3080 0.3299 0.3123 0.3342 0.3166 0.3384 0.3048 0.3209 0.3089 0.3249 0.3131 0.3290 0.3172 0.3331 0.3089 0.3249 0.3131 0.3290 0.3172 0.3331 0.3213 0.3371 0.3080 0.3299 0.3123 0.3342 0.3166 0.3384 0.3209 0.3426 A13 A23 A33 A43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3048 0.3209 0.3089 0.3249 0.3131 0.3290 0.3172 0.3331 0.3058 0.3161 0.3098 0.3200 0.3138 0.3239 0.3178 0.3277 0.3098 0.3200 0.3138 0.3239 0.3178 0.3277 0.3217 0.3316 0.3089 0.3249 0.3131 0.3290 0.3172 0.3331 0.3213 0.3371 A14 A24 A34 A44 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3058 0.3161 0.3098 0.3200 0.3138 0.3239 0.3178 0.3277 0.3068 0.3113 0.3107 0.3150 0.3146 0.3187 0.3184 0.3224 0.3107 0.3150 0.3146 0.3187 0.3184 0.3224 0.3221 0.3261 0.3098 0.3200 0.3138 0.3239 0.3178 0.3277 0.3217 0.3316 13 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Cool White), I = 100mA, T = 25ºC, F j 5300K 0.36 5600K B41 B31 0.35 6000K B21 B42 B32 Y B11 B22 B43 E B33 CI0.34 B12 B44 B23 B34 B13 B24 0.33 B14 0.32 0.320 0.325 0.330 0.335 0.340 CIE X B11 B21 B31 B41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3207 0.3462 0.3250 0.3501 0.3292 0.3539 0.3334 0.3578 0.3211 0.3407 0.3252 0.3444 0.3293 0.3481 0.3333 0.3518 0.3252 0.3444 0.3293 0.3481 0.3333 0.3518 0.3374 0.3554 0.3250 0.3501 0.3292 0.3539 0.3334 0.3578 0.3376 0.3616 B12 B22 B32 B42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3211 0.3407 0.3252 0.3444 0.3293 0.3481 0.3333 0.3518 0.3215 0.3353 0.3254 0.3388 0.3293 0.3423 0.3332 0.3458 0.3254 0.3388 0.3293 0.3423 0.3332 0.3458 0.3371 0.3493 0.3252 0.3444 0.3293 0.3481 0.3333 0.3518 0.3374 0.3554 B13 B23 B33 B43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3215 0.3353 0.3254 0.3388 0.3293 0.3423 0.3332 0.3458 0.3218 0.3298 0.3256 0.3331 0.3294 0.3364 0.3331 0.3398 0.3256 0.3331 0.3294 0.3364 0.3331 0.3398 0.3369 0.3431 0.3254 0.3388 0.3293 0.3423 0.3332 0.3458 0.3371 0.3493 B14 B24 B34 B44 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3218 0.3298 0.3256 0.3331 0.3294 0.3364 0.3331 0.3398 0.3222 0.3243 0.3258 0.3275 0.3294 0.3306 0.3330 0.3338 0.3258 0.3275 0.3294 0.3306 0.3330 0.3338 0.3366 0.3369 0.3256 0.3331 0.3294 0.3364 0.3331 0.3398 0.3369 0.3431 14 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Cool White), I = 100mA, T = 25ºC, F j 0.38 4700K 5000K C41 0.37 C31 5300K C21 C42 0.36 C11 C32 Y E C22 C43 CI C12 C33 C23 C44 0.35 C13 C34 C24 C14 0.34 0.335 0.340 0.345 0.350 0.355 CIE X C11 C21 C31 C41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3376 0.3616 0.3420 0.3652 0.3463 0.3687 0.3507 0.3724 0.3374 0.3554 0.3415 0.3588 0.3457 0.3622 0.3500 0.3657 0.3415 0.3588 0.3457 0.3622 0.3500 0.3657 0.3542 0.3692 0.3420 0.3652 0.3463 0.3687 0.3507 0.3724 0.3551 0.3760 C12 C22 C32 C42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3374 0.3554 0.3415 0.3588 0.3457 0.3622 0.3500 0.3657 0.3371 0.3493 0.3411 0.3525 0.3452 0.3558 0.3492 0.3591 0.3411 0.3525 0.3452 0.3558 0.3492 0.3591 0.3533 0.3624 0.3415 0.3588 0.3457 0.3622 0.3500 0.3657 0.3542 0.3692 C13 C23 C33 C43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3371 0.3493 0.3411 0.3525 0.3452 0.3558 0.3492 0.3591 0.3369 0.3431 0.3407 0.3462 0.3446 0.3493 0.3485 0.3524 0.3407 0.3462 0.3446 0.3493 0.3485 0.3524 0.3523 0.3555 0.3411 0.3525 0.3452 0.3558 0.3492 0.3591 0.3533 0.3624 C14 C24 C34 C44 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3369 0.3431 0.3407 0.3462 0.3446 0.3493 0.3485 0.3524 0.3366 0.3369 0.3403 0.3399 0.3440 0.3428 0.3477 0.3458 0.3403 0.3399 0.3440 0.3428 0.3477 0.3458 0.3514 0.3487 0.3407 0.3462 0.3446 0.3493 0.3485 0.3524 0.3523 0.3555 15 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Neutral White), T = 25℃, I = 100mA j F 0.39 4200K 4500K D41 0.38 D31 4700K D21 D42 D11 D32 0.37 Y D22 E D43 CI D12 D33 0.36 D23 D44 D13 D34 D24 D14 0.35 0.34 0.350 0.355 0.360 0.365 0.370 0.375 CIE X D11 D21 D31 D41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3548 0.3736 0.3595 0.3770 0.3641 0.3804 0.3689 0.3839 0.3539 0.3668 0.3584 0.3701 0.3628 0.3733 0.3674 0.3767 0.3584 0.3701 0.3628 0.3733 0.3674 0.3767 0.3720 0.3800 0.3595 0.3770 0.3641 0.3804 0.3689 0.3839 0.3736 0.3874 D12 D22 D32 D42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3539 0.3668 0.3584 0.3701 0.3628 0.3733 0.3674 0.3767 0.3530 0.3601 0.3573 0.3632 0.3616 0.3663 0.3659 0.3694 0.3573 0.3632 0.3616 0.3663 0.3659 0.3694 0.3703 0.3726 0.3584 0.3701 0.3628 0.3733 0.3674 0.3767 0.3720 0.3800 D13 D23 D33 D43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3530 0.3601 0.3573 0.3632 0.3616 0.3663 0.3659 0.3694 0.3520 0.3533 0.3562 0.3562 0.3603 0.3592 0.3645 0.3622 0.3562 0.3562 0.3603 0.3592 0.3645 0.3622 0.3687 0.3652 0.3573 0.3632 0.3616 0.3663 0.3659 0.3694 0.3703 0.3726 D14 D24 D34 D44 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3520 0.3533 0.3562 0.3562 0.3603 0.3592 0.3645 0.3622 0.3511 0.3465 0.3551 0.3493 0.3590 0.3521 0.3630 0.3550 0.3551 0.3493 0.3590 0.3521 0.3630 0.3550 0.3670 0.3578 0.3562 0.3562 0.3603 0.3592 0.3645 0.3622 0.3687 0.3652 16 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Neutral White), T = 25℃, I = 100mA j F 0.41 3700K 0.40 4000K E41 E31 0.39 4200K E21 E42 E11 E32 Y E22 E43 E 0.38 CI E12 E33 E23 E44 E13 E34 0.37 E24 E14 0.36 0.35 0.36 0.37 0.38 0.39 0.40 CIE X E11 E21 E31 E41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3736 0.3874 0.3804 0.3917 0.3871 0.3959 0.3939 0.4002 0.3720 0.3800 0.3784 0.3841 0.3849 0.3881 0.3914 0.3922 0.3784 0.3841 0.3849 0.3881 0.3914 0.3922 0.3979 0.3962 0.3804 0.3917 0.3871 0.3959 0.3939 0.4002 0.4006 0.4044 E12 E22 E32 E42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3720 0.3800 0.3784 0.3841 0.3849 0.3881 0.3914 0.3922 0.3703 0.3726 0.3765 0.3765 0.3828 0.3803 0.3890 0.3842 0.3765 0.3765 0.3828 0.3803 0.3890 0.3842 0.3952 0.3880 0.3784 0.3841 0.3849 0.3881 0.3914 0.3922 0.3979 0.3962 E13 E23 E33 E43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3703 0.3726 0.3765 0.3765 0.3828 0.3803 0.3890 0.3842 0.3687 0.3652 0.3746 0.3689 0.3806 0.3725 0.3865 0.3762 0.3746 0.3689 0.3806 0.3725 0.3865 0.3762 0.3925 0.3798 0.3765 0.3765 0.3828 0.3803 0.3890 0.3842 0.3952 0.3880 E14 E24 E34 E44 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3687 0.3652 0.3746 0.3689 0.3806 0.3725 0.3865 0.3762 0.3670 0.3578 0.3727 0.3613 0.3784 0.3647 0.3841 0.3682 0.3727 0.3613 0.3784 0.3647 0.3841 0.3682 0.3898 0.3716 0.3746 0.3689 0.3806 0.3725 0.3865 0.3762 0.3925 0.3798 17 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Warm White), I = 100mA, T = 25ºC, F j 0.42 3200K 3500K 0.41 F41 F31 3700K F21 F42 0.40 F11 F32 Y F22 F43 E F12 CI0.39 F33 F23 F13 F44 F34 0.38 F24 F14 0.37 0.39 0.40 0.41 0.42 0.43 CIE X F11 F21 F31 F41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3996 0.4015 0.4071 0.4052 0.4146 0.4089 0.4223 0.4127 0.3969 0.3934 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4261 0.4077 0.4071 0.4052 0.4146 0.4089 0.4223 0.4127 0.4299 0.4165 F12 F22 F32 F42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3969 0.3934 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.3943 0.3853 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4223 0.3990 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4261 0.4077 F13 F23 F33 F43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3943 0.3853 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.3916 0.3771 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.4185 0.3902 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4223 0.3990 F14 F24 F34 F44 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3916 0.3771 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.3889 0.3690 0.3953 0.3721 0.4017 0.3751 0.4082 0.3783 0.3953 0.3721 0.4017 0.3751 0.4082 0.3783 0.4147 0.3814 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.4185 0.3902 18 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Warm White), I = 100mA, T = 25ºC, F j 0.43 2900K 3000K 0.42 3200K G41 G31 G21 G11 G42 0.41 G32 Y G22 E G12 CI0.40 G33 G43 G23 G13 G44 0.39 G34 G24 G14 0.38 0.41 0.42 0.43 0.44 0.45 0.46 CIE X G11 G21 G31 G41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4299 0.4165 0.4364 0.4188 0.4430 0.4212 0.4496 0.4236 0.4261 0.4077 0.4324 0.4099 0.4387 0.4122 0.4451 0.4145 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4514 0.4168 0.4365 0.4189 0.4430 0.4212 0.4496 0.4236 0.4562 0.4260 G12 G22 G32 G42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4261 0.4077 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4223 0.3990 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4468 0.4077 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4515 0.4168 G13 G23 G33 G43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4223 0.3990 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4185 0.3902 0.4243 0.3922 0.4302 0.3943 0.4361 0.3964 0.4243 0.3922 0.4302 0.3943 0.4361 0.3964 0.4420 0.3985 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4468 0.4077 G14 G24 G34 G44 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4243 0.3922 0.4302 0.3943 0.4302 0.3943 0.4361 0.3964 0.4203 0.3834 0.4259 0.3853 0.4259 0.3853 0.4316 0.3873 0.4147 0.3814 0.4203 0.3834 0.4316 0.3873 0.4373 0.3893 0.4185 0.3902 0.4243 0.3922 0.4361 0.3964 0.4420 0.3985 19 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Warm White), I = 100mA, T = 25ºC, F j 0.44 2600K 2700K 0.43 2900K H41 H31 H21 H11 0.42 H42 H32 H22 Y H12 E 0.41 CI H33 H43 H13 H23 0.40 H44 H24 H34 H14 0.39 0.38 0.43 0.44 0.45 0.46 0.47 0.48 CIE X H11 H21 H31 H41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4562 0.4260 0.4625 0.4275 0.4687 0.4289 0.4750 0.4304 0.4515 0.4168 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4758 0.4225 0.4625 0.4275 0.4687 0.4289 0.4750 0.4304 0.4810 0.4319 H12 H22 H32 H42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4515 0.4168 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4468 0.4077 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4703 0.4132 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4758 0.4225 H13 H23 H33 H43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4468 0.4077 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4420 0.3985 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4648 0.4038 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4703 0.4132 H14 H24 H34 H44 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4420 0.3985 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4373 0.3893 0.4428 0.3906 0.4483 0.3919 0.4538 0.3932 0.4428 0.3906 0.4483 0.3919 0.4538 0.3932 0.4593 0.3944 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4648 0.4038 20 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Mechanical Dimensions / Material Structure Top View Bottom View N.C A N.C C *[1] Slug (Anode) Cathode Mark Side View Circuit Cathode Anode 1 2 ESD Protection Device (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.1mm (4) The LED package has two Cathode Marks. *[1] 21 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Mechanical Dimensions / Material Structure Parts No. Name Description Materials Copper Alloy ① LEAD FRAME Metal (Silver Plated) ② Chip Source Blue LED GaN on Sapphire ③ Wire Metal Gold Wire ④ Encapsulation Silicone +Phosphor ⑤ Body Thermo Plastic Heat-resistant Polymer ⑥ Zener Diode Si - 22 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Reel Packaging 15.4±1.0 180 13±0.3 2 0 6 22 13 ( Tolerance: ±0.2, Unit: mm ) (1) Quantity : Max 3,500pcs/Reel (2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10˚ to the carrier tape. (4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package. 23 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Reel Packaging Reel Aluminum Bag Outer Box 24 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Product Nomenclature Table 5. Part Numbering System : X X X X X X X 1 2 3 4 5 6 7 Part Number Code Description Part Number Value X Company S 1 X Top View LED series T 2 X Color Specification W8 CRI 80 3 X Package series Q Q series 4 XX Characteristic code 14 5 6 X Revision C 7 Table 6. Lot Numbering System :Y Y Y Y Y Y Y Y Y Y –Y Y Y Y Y Y Y 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Lot Number Code Description Lot Number Value YY Year 1 2 Y Month 3 YY Day 4 5 Y Top View LED series 6 YYYY Mass order 7 8 9 10 Y Y Y Y Y Y Y Internal Number 11 12 13 14 15 16 17 25 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Recommended Solder Pad Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) This drawing without tolerances are for reference only. (4) Undefined tolerance is ±0.1mm. 26 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Table 7. Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Tsmin) 100 °C 150 °C - Temperature Max (Tsmax) 150 °C 200 °C - Time (Tsmin to Tsmax) (ts) 60-120 seconds 60-180 seconds Time maintained above: - Temperature (TL) 183 °C 217 °C - Time (tL) 60-150 seconds 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time within 5°C of actual Peak 10-30 seconds 20-40 seconds Temperature (tp)2 Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. 27 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Handling 5630 Series (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this. product with acid or sulfur material in sealed space. 28 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Precaution for Use (1) Storage To avoid the moisture penetration, we recommend store in a dry box with a desiccant. The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use proper SMT techniques when the LED is to be soldered dipped as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing - Temperature : 5 ~ 40℃ Humidity : less than RH30% b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant changes, components should be dried for 10-12hr at 60±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. (10) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or more after being shipped from SSC, a sealed container with a nitrogen atmosphere should be used for storage. 29 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Precaution for Use (11) The appearance and specifications of the product may be modified for improvement without notice. (12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. (13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (14) Attaching LEDs, do not use adhesives that outgas organic vapor. (15) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. (16) Similar to most Solid state devices; LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) 30 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires - This damage usually appears due to the thermal stress produced during the EOS event c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device 31 www.seoulsemicon.com Rev2.1, Nov ,2013

Product Data Sheet 5630 – Mid-Power LED Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT - Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. 32 www.seoulsemicon.com Rev2.1, Nov ,2013