STx42N65M5 N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET 2 2 in I PAK, TO-220, TO-220FP, D PAK and TO-247 Features V @ R Type DSS DS(on) I T max D Jmax 3 3 STB42N65M5 710 V < 0.079 Ω 33 A 3 1 2 2 1 STF42N65M5 710 V < 0.079 Ω 33 A (1) 1 D²PAK TO-220 TO-220FP STI42N65M5 710 V < 0.079 Ω 33 A STP42N65M5 710 V < 0.079 Ω 33 A STW42N65M5 710 V < 0.079 Ω 33 A 1. Limited only by maximum temperature allowed 123 23 ■ TO-220 worldwide best R 1 DS(on) I²PAK TO-247 ■ Higher V rating DSS ■ High dv/dt capability ■ Excellent switching performance Figure 1. Internal schematic diagram ■ Easy to drive ■ 100% avalanche tested (cid:36)(cid:8)(cid:18)(cid:9) Application ■ Switching applications (cid:39)(cid:8)(cid:17)(cid:9) Description MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary (cid:51)(cid:8)(cid:19)(cid:9) vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies. Table 1. Device summary Order codes Marking Package Packaging STB42N65M5 42N65M5 D²PAK Tape and reel STF42N65M5 42N65M5 TO-220FP Tube STI42N65M5 42N65M5 I²PAK Tube STP42N65M5 42N65M5 TO-220 Tube STW42N65M5 42N65M5 TO-247 Tube June 2009 Doc ID 15317 Rev 3 1/18 www.st.com 18

Contents STx42N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 Doc ID 15317 Rev 3

STx42N65M5 Electrical ratings 1 Electrical ratings T able 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, TO-247 TO-220FP D²PAK, I²PAK V Gate- source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 33 33 (1) A D C I Drain current (continuous) at T = 100 °C 20.8 20.8 (1) A D C I (2) Drain current (pulsed) 132 132 (1) A DM P Total dissipation at T = 25 °C 190 40 W TOT C Max current during repetitive or single pulse I 11 A AR avalanche (pulse width limited by T ) JMAX Single pulse avalanche energy E 950 mJ AS (starting T = 25°C, I = I , V = 50V) j D AR DD dv/dt (3) Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all V three leads to external heat sink -- 2500 V ISO (t = 1 s; TC = 25 °C) T Storage temperature -55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. I ≤ 33 A, di/dt ≤ 400 A/µs, V < V SD Peak (BR)DSS T able 3. Thermal data Value Symbol Parameter Unit D²PAK I²PAK TO-220 TO-247 TO-220FP Thermal resistance junction- R 0.66 3.1 °C/W thj-case case max Thermal resistance junction- R -- 62.5 50 62.5 °C/W thj-amb ambient max Thermal resistance junction-pcb R 30 -- -- -- -- °C/W thj-pcb max Maximum lead temperature for T 300 °C l soldering purpose Doc ID 15317 Rev 3 3/18

Electrical characteristics STx42N65M5 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 650 V (BR)DSS breakdown voltage D GS Zero gate voltage V = Max rating 1 µA I DS DSS drain current (V = 0) V = Max rating, T =125 °C 100 µA GS DS C Gate-body leakage I V = ± 25 V 100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 3 4 5 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 16.5 A 0.070 0.079 Ω DS(on resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 4650 pF Ciss Output capacitance VDS = 100 V, f = 1 MHz, - 110 - pF Coss Reverse transfer VGS = 0 3.2 pF rss capacitance Equivalent output V = 0, V = 0 to 80% C (1) capacitance energy GS DS - 100 - pF o(er) V related (BR)DSS Equivalent output V = 0, V = 0 to 80% C (2) capacitance time GS DS - 285 - pF o(tr) V related (BR)DSS Intrinsic gate R f = 1 MHz open drain - 1.1 - Ω G resistance Q Total gate charge V = 520 V, I = 16.5 A, 100 nC g DD D Q Gate-source charge V = 10 V - 26 - nC gs GS Q Gate-drain charge (see Figure20) 38 nC gd 1. C is a constant capacitance value that gives the same stored energy as C while V is rising from 0 o(er) oss DS to 80% V DSS 2. C is a constant capacitance value that gives the same charging time as C while V is rising from 0 o(tr) oss DS to 80% V DSS 4/18 Doc ID 15317 Rev 3

STx42N65M5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t Turn-on delay time 61 ns d(on) V = 400 V, I = 20 A, t Rise time DD D 24 ns r R = 4.7 Ω, V = 10 V - - t Turn-off-delay time G GS 65 ns d(off) (see Figure19) t Fall time 13 ns f Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 33 A SD - I (1) Source-drain current (pulsed) 132 A SDM V (2) Forward on voltage I = 33 A, V = 0 - 1.5 V SD SD GS t Reverse recovery time 400 ns rr I = 33 A, di/dt = 100 A/µs Q Reverse recovery charge SD - 7 µC rr V = 100 V (see Figure24) I Reverse recovery current DD 35 A RRM t Reverse recovery time I = 33 A, di/dt = 100 A/µs 532 ns rr SD Q Reverse recovery charge V = 100 V, T = 150 °C - 10 µC rr DD j I Reverse recovery current (see Figure24) 38 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 15317 Rev 3 5/18

Electrical characteristics STx42N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance for TO-220, D²PAK, I²PAK D²PAK, I²PAK ID AM01565v1 (A) 100 10 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 11100m0µsµss Li 10ms 1 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 ID AM03246v1 (A) 100 10 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 11100m0µsµss Li 10ms 1 0.1 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP ID AM01566v1 (A) 100 10 Operamtiitoend ibn yt himsa xa rReaD iS(son) 11000µµss Li 1 1ms 10ms 0.1 0.01 0.1 1 10 100 VDS(V) 6/18 Doc ID 15317 Rev 3

STx42N65M5 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics ID AM01589v1 ID AM01590v1 (A) (A) 80 80 VGS=10V 8V 70 70 VDS=20V 7.5V 60 60 50 50 7V 40 40 30 30 6.5V 20 20 10 10 6V 0 0 0 5 10 15 VDS(V) 3 4 5 6 7 8 9 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM01569v1 AM01568v1 V(VG)S VGS V(VD)S RDS(Ω(on)) 10 500 0.076 VDS VGS=10V 0.074 8 400 VDD=520V 0.072 6 VGS=10V 300 ID=16.5A 0.070 4 200 0.068 2 100 0.066 0 0 0.064 0 20 40 60 80 100 120 Qg(nC) 0 10 20 30 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM01570v1 Eoss AM03231v1 (pF) (µJ) 10000 16 Ciss 14 1000 12 10 100 Coss 8 6 10 4 Crss 2 1 0 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V) Doc ID 15317 Rev 3 7/18

Electrical characteristics STx42N65M5 Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature VGS(th) AM01571v1 RDS(on) AM01573v1 (norm) (norm) ID = 16.5 A 1.1 VGS= 10 V 2.0 ID = 250 µA 1.0 1.5 0.9 1.0 0.8 0.7 0.5 0.6 0 -50 0 50 100 TJ(°C) -50 0 50 100 TJ(°C) Figure 16. Source-drain diode forward Figure 17. Normalized B vs temperature VDSS characteristics VSD AM01574v1 BVDSS AM01572v1 (V) (norm) 1.0 TJ=-25°C 0.9 1.05 0.8 0.7 1.00 0.6 TJ=25°C 0.5 TJ=150°C ID = 1 mA 0.4 0.95 0.3 0.2 0.90 0 5 10 15 20 25 30 ISD(A) -50 0 50 100 TJ(°C) Figure 18. Switching losses vs gate resistance (1) AM01575v1 E (µJ) Eon ID=20A 600 VDD=400V L=50µH 500 400 300 Eoff 200 100 0 0 5 10 15 20 25 30 35 40 45 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/18 Doc ID 15317 Rev 3

STx42N65M5 Test circuits 3 Test circuits Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2µ20F0 3µ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 15317 Rev 3 9/18

Package mechanical data STx42N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/18 Doc ID 15317 Rev 3

STx42N65M5 Package mechanical data TO-220 mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.6 0.62 D1 1.27 0.050 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.051 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 ∅P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 Doc ID 15317 Rev 3 11/18

Package mechanical data STx42N65M5 TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.50 12/18 Doc ID 15317 Rev 3

STx42N65M5 Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F H G G1 L2 L4 L3 7012510_Rev_J Doc ID 15317 Rev 3 13/18

Package mechanical data STx42N65M5 I²PAK (TO-262) mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 14/18 Doc ID 15317 Rev 3

STx42N65M5 Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 A1 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 7.50 0.295 E 10 10.40 0.394 0.409 E1 8.50 0.334 e 2.54 0.1 e1 4.88 5.28 0.192 0.208 H 15 15.85 0.590 0.624 J1 2.49 2.69 0.099 0.106 L 2.29 2.79 0.090 0.110 L1 1.27 1.40 0.05 0.055 L2 1.30 1.75 0.051 0.069 R 0.4 0.016 V2 0° 8° 0° 8° 0079457_M Doc ID 15317 Rev 3 15/18

Packaging mechanical data STx42N65M5 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 16/18 Doc ID 15317 Rev 3

STx42N65M5 Revision history 6 Revision history T able 8. Document revision history Date Revision Changes 16-Jan-2009 1 First release 15-May-2009 2 Updated figures 9, 10, 11 and 17 12-Jun-2009 3 Figure15 has been updated Doc ID 15317 Rev 3 17/18

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