STP36N55M5 STW36N55M5 Ω N-channel 550 V, 0.06 typ., 33 A MDmesh™ V Power MOSFET in TO-220 and TO-247 packages Datasheet — production data Features V @ R Order codes DSS DS(on) I T max D Jmax TAB STP36N55M5 600 V < 0.08 Ω 33 A STW36N55M5 ■ Worldwide best RDS(on) * area 23 2 3 ■ Higher V rating and high dv/dt capability 1 1 DSS TO-220 TO-247 ■ Excellent switching performance ■ 100% avalanche tested Applications Figure 1. Internal schematic diagram ■ Switching applications Description (cid:36)(cid:8)(cid:18)(cid:12)(cid:0)(cid:52)(cid:33)(cid:34)(cid:9) These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known (cid:39)(cid:8)(cid:17)(cid:9) PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially (cid:51)(cid:8)(cid:19)(cid:9) suitable for applications which require superior power density and outstanding efficiency. (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) Table 1. Device summary Order codes Marking Package Packaging STP36N55M5 TO-220 36N55M5 Tube STW36N55M5 TO-247 October 2012 Doc ID 022902 Rev 2 1/15 This is information on a product in full production. www.st.com 15

Contents STP36N55M5, STW36N55M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 022902 Rev 2

STP36N55M5, STW36N55M5 Electrical ratings 1 Electrical ratings T a ble 2. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 33 A D C I Drain current (continuous) at T = 100 °C 20.8 A D C I (1) Drain current (pulsed) 132 A DM P Total dissipation at T = 25 °C 190 W TOT C dv/dt (1) Peak diode recovery voltage slope 15 V/ns T Storage temperature - 55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. I ≤ 33 A, di/dt ≤ 400 A/µs; V < V , V = 340 V. SD DS(Peak) (BR)DSS DD T able 3. Thermal data Value Symbol Parameter Unit TO-220 TO-247 R Thermal resistance junction-case max 0.66 °C/W thj-case R Thermal resistance junction-ambient max 62.5 50 °C/W thj-amb T able 4. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetetive or not repetetive I 7 A AR (pulse width limited by T ) jmax Single pulse avalanche energy (starting E 510 mJ AS T =25°C, I = I ; V =50 V) J D AR DD Doc ID 022902 Rev 2 3/15

Electrical characteristics STP36N55M5, STW36N55M5 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 550 V (BR)DSS breakdown voltage D GS Zero gate voltage V = 550 V 1 µA I DS DSS drain current (V = 0) V = 550 V, T =125 °C 100 µA GS DS C Gate-body leakage I V = ± 25 V ± 100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 3 4 5 V GS(th) DS GS D Static drain-source R V = 10 V, I = 16.5 A 0.06 0.08 Ω DS(on) on-resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 2670 pF Ciss Output capacitance VDS = 100 V, f = 1 MHz, - 75 - pF Coss Reverse transfer VGS = 0 6.6 pF rss capacitance Equivalent C (1) capacitance time - 192 - pF o(tr) related V = 0 to 440 V, V = 0 DS GS Equivalent C (2) capacitance energy - 71 - pF o(er) related Intrinsic gate R f = 1 MHz open drain - 1.85 - Ω G resistance Q Total gate charge V = 440 V, I = 16.5 A, 62 nC g DD D Q Gate-source charge V = 10 V - 15 - nC gs GS Q Gate-drain charge (see Figure18) 27 nC gd 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C when oss V increases from 0 to 80% V DS DSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V increases from 0 to 80% V DS DSS 4/15 Doc ID 022902 Rev 2

STP36N55M5, STW36N55M5 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(V) Voltage delay time VDD = 400 V, ID = 22 A, 56 ns tr(V) Voltage rise time RG = 4.7 Ω, VGS = 10 V - 13 - ns tf(i) Current fall time (see Figure19 and 13 ns t Crossing time Figure22) 17 ns c(off) Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 33 A SD - I (1) Source-drain current (pulsed) 132 A SDM V (2) Forward on voltage I = 33 A, V = 0 - 1.5 V SD SD GS t Reverse recovery time 334 ns rr I = 33 A, di/dt = 100 A/µs Q Reverse recovery charge SD - 5 µC rr V = 100 V (see Figure22) I Reverse recovery current DD 31 A RRM t Reverse recovery time I = 33 A, di/dt = 100 A/µs 406 ns rr SD Q Reverse recovery charge V = 100 V, T = 150 °C - 7 µC rr DD j I Reverse recovery current (see Figure22) 35 A RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022902 Rev 2 5/15

Electrical characteristics STP36N55M5, STW36N55M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 ID AM14928v1 (A) Tj=150°C Tc=25°C Single pulse 100 10 Operatmiitoen di nb yt hims aax reRa DiSs(on) 11000µµss Li 1ms 1 10ms 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 ID AM14929v1 (A) Tj=150°C Tc=25°C Single pulse 100 10 Operatmiitoen di nb yt hims aax reRa DiSs(on) 11000µµss Li 1ms 1 10ms 0.1 0.1 1 10 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM14930v1 AM14931v1 ID(A) ID(A) VGS=10V VDS=25V 70 70 7V 60 60 50 50 40 40 30 30 6V 20 20 10 10 0 0 0 5 10 15 20 25 VDS(V) 3 4 5 6 7 8 9 VGS(V) 6/15 Doc ID 022902 Rev 2

STP36N55M5, STW36N55M5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance V(VG)S AMV1D4S93(V2v)1 RDS(Ω(on)) AM14933v1 VDS VDD=440V 450 VGS=10V 12 ID=16.5A 400 0.065 10 350 300 0.06 8 250 6 200 0.055 150 4 100 0.05 2 50 0 0 0.045 0 10 20 30 40 50 60 70 Qg(nC) 0 5 10 15 20 25 30 ID(A) Figure 10. Capacitance variations Figure 11. Output capacitance stored energy C AM14934v1 Eoss AM14935v1 (pF) (µJ) 10 10000 Ciss 8 1000 6 100 Coss 4 10 Crss 2 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 VDS(V) Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs vs temperature temperature VGS(th) AM05459v3 RDS(on) AM05460v3 (norm) ID=250µA (norm) VGS=10V 1.10 2.1 ID=16.5V 1.9 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Doc ID 022902 Rev 2 7/15

Electrical characteristics STP36N55M5, STW36N55M5 Figure 14. Source-drain diode forward Figure 15. Normalized B vs temperature VDSS characteristics VSD AM05461v3 VDS AM10399v1 (V) (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0.94 0 0.92 0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Switching losses vs gate resistance (1) E AM14936v1 (μJ) ID=22A Eon 600 VDD=400V VGS=10V 500 400 300 Eoff 200 100 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/15 Doc ID 022902 Rev 2

STP36N55M5, STW36N55M5 Test circuits 3 Test circuits Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load (cid:54)(cid:36)(cid:36) (cid:17)(cid:18)(cid:54) (cid:20)(cid:23)(cid:75) (cid:17)(cid:75) (cid:17)(cid:16)(cid:16)(cid:78)(cid:38) (cid:50)(cid:44) (cid:18)(cid:18)(cid:16)(cid:16) (cid:19)(cid:14)(cid:19) (cid:38) (cid:38) (cid:54)(cid:36)(cid:36) (cid:41)(cid:39)(cid:29)(cid:35)(cid:47)(cid:46)(cid:51)(cid:52) (cid:54)(cid:36) (cid:54)(cid:73)(cid:29)(cid:18)(cid:16)(cid:54)(cid:29)(cid:54)(cid:39)(cid:45)(cid:33)(cid:56) (cid:17)(cid:16)(cid:16) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:54)(cid:39)(cid:51) (cid:18)(cid:18)(cid:16)(cid:16) (cid:50)(cid:39) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:38) (cid:18)(cid:14)(cid:23)(cid:75) (cid:54)(cid:39) (cid:48)(cid:55) (cid:20)(cid:23)(cid:75) (cid:17)(cid:75) (cid:48)(cid:55) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:22)(cid:24)(cid:86)(cid:17) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:22)(cid:25)(cid:86)(cid:17) Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit (cid:44) (cid:33) (cid:33) (cid:33) (cid:36) (cid:38)(cid:33)(cid:51)(cid:52) (cid:44)(cid:29)(cid:17)(cid:16)(cid:16) (cid:40) (cid:54)(cid:36) (cid:39) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:36)(cid:41)(cid:47)(cid:36)(cid:37) (cid:18)(cid:18)(cid:16)(cid:16) (cid:19)(cid:14)(cid:19) (cid:38) (cid:38) (cid:54)(cid:36)(cid:36) (cid:51) (cid:34) (cid:19)(cid:14)(cid:19) (cid:17)(cid:16)(cid:16)(cid:16) (cid:34) (cid:34) (cid:38) (cid:38) (cid:18)(cid:21) (cid:36) (cid:54)(cid:36)(cid:36) (cid:41)(cid:36) (cid:39) (cid:50)(cid:39) (cid:51) (cid:54)(cid:73) (cid:36)(cid:14)(cid:53)(cid:14)(cid:52)(cid:14) (cid:48)(cid:87) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:16)(cid:86)(cid:17) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:17)(cid:86)(cid:17) Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform (cid:54)(cid:8)(cid:34)(cid:50)(cid:9)(cid:36)(cid:51)(cid:51) Concept waveform for Inductive Load Turn-off Id (cid:54)(cid:36) 90%Vds 90%Id Tdelay--ooffff (cid:41)(cid:36)(cid:45) Vgs 90%Vgs oonn (cid:41)(cid:36) Vgs(I(t)))) (cid:54)(cid:36)(cid:36) (cid:54)(cid:36)(cid:36) 10%Vds 10%Id Vds TTrriissee TTffaallll (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:18)(cid:86)(cid:17) Tcross--over AM05540v2 Doc ID 022902 Rev 2 9/15

Package mechanical data STP36N55M5, STW36N55M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 10/15 Doc ID 022902 Rev 2

STP36N55M5, STW36N55M5 Package mechanical data Figure 23. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 022902 Rev 2 11/15

Package mechanical data STP36N55M5, STW36N55M5 Table 10. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 12/15 Doc ID 022902 Rev 2

STP36N55M5, STW36N55M5 Package mechanical data Figure 24. TO-247 drawing 0075325_G Doc ID 022902 Rev 2 13/15

Revision history STP36N55M5, STW36N55M5 5 Revision history T able 11. Document revision history Date Revision Changes 07-Mar-2012 1 First release. 23-Oct-2012 2 Document status promoted from preliminary data to production data. 14/15 Doc ID 022902 Rev 2

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