STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Ω N-channel 500 V, 0.1 typ., 22 A MDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages Datasheet — production data Features TAB R Order codes V DS(on) I P DS max. D TOT 2 3 1 3 STB32NM50N 190 W 2 D²PAK 1 STF32NM50N 35 W TO-220FP 500 V 0.13 Ω 22 A STP32NM50N 190 W TAB STW32NM50N 190 W ■ 100% avalanche tested ■ Low input capacitance and gate charge 3 3 2 2 1 1 ■ Low gate input resistance TO-220 TO-247 Applications ■ Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs (cid:36)(cid:8)(cid:18)(cid:0)(cid:79)(cid:82)(cid:0)(cid:52)(cid:33)(cid:34)(cid:9) developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is (cid:39)(cid:8)(cid:17)(cid:9) therefore suitable for the most demanding high efficiency converters. (cid:51)(cid:8)(cid:19)(cid:9) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:21)(cid:86)(cid:17) Table 1. Device summary Order codes Marking Package Packaging STB32NM50N D2PAK Tape and reel STF32NM50N TO-220FP Tube 32NM50N STP32NM50N TO-220 Tube STW32NM50N TO-247 Tube August 2012 Doc ID 023436 Rev 1 1/21 This is information on a product in full production. www.st.com 21

Contents STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 Doc ID 023436 Rev 1

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D²PAK, TO-220, TO-220FP TO-247 V Drain-source voltage 500 V DS V Gate- source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 22 22 (1) A D C I Drain current (continuous) at T = 100 °C 13.86 13.86 (1) A D C I (2) Drain current (pulsed) 88 88 A DM P Total dissipation at T = 25 °C 190 35 W TOT C Avalanche current, repetitive or not- I 7 A AR repetitive (pulse width limited by T max) J Single pulse avalanche energy E 340 mJ AS (starting T = 25 °C, I = I , V = 50 V) J D AR DD dv/dt(3) Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from V all three leads to external heat sink 2500 V ISO (t = 1 s; TC = 25 °C) T Storage temperature - 55 to 150 stg °C T Max. operating junction temperature 150 J 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I ≤ 22 A, di/dt ≤ 400 A/µs, V peak ≤ V , V ≤ 80% V SD DS (BR)DSS DD (BR)DSS Table 3. Thermal data Symbol Parameter D²PAK TO-220FP TO-220 TO-247 Unit R Thermal resistance junction-case max 0.66 3.6 0.66 thj-case R Thermal resistance junction-ambient max 62.5 50 °C/W thj-amb R (1) Thermal resistance junction-pcb max 30 thj-pcb 1. When mounted on FR-4 board of 1 inch², 2 oz Cu. Doc ID 023436 Rev 1 3/21

Electrical characteristics STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Value Symbol Parameter Test conditions Unit Min. Typ. Max. Drain-source V(BR)DSS breakdown voltage ID = 1 mA 500 V (V = 0) GS Zero gate voltage V = 500 V 1 µA I DS DSS drain current (V = 0) V = 500 V, T = 125 °C 100 µA GS DS C Gate-body leakage I V = ± 25 V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 2 3 4 V GS(th) DS GS D Static drain-source R V = 10 V, I = 11 A 0.1 0.13 Ω DS(on) on-resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 1973 pF Ciss Output capacitance VDS = 50 V, f = 1 MHz, - 179 - pF Coss Reverse transfer VGS = 0 9.7 pF rss capacitance Equivalent output C (1) V = 0, V = 0 to 400 V - 325 - pF oss eq. capacitance GS DS t Turn-on delay time V =250 V, I = 11 A 21.5 ns d(on) DD D t Rise time R =4.7 Ω, V = 10 V 9.5 ns r G GS - - t Turn-off delay time (see Figure23), 110 ns d(off) t Fall time (see Figure18) 23.6 ns f Q Total gate charge V = 400 V, I = 22 A, 62.5 nC g DD D Q Gate-source charge V = 10 V, - 8.6 - nC gs GS Q Gate-drain charge (see Figure19) 33 nC gd f=1MHz Gate DC Bias=0 R Gate input resistance Test signal level=20 mV - 3.8 - Ω g Open drain 1. C . is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq oss DS increases from 0 to 80% V DSS 4/21 Doc ID 023436 Rev 1

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Electrical characteristics Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 22 A SD - I (1) Source-drain current (pulsed) 88 A SDM V (2) Forward on voltage I = 22 A, V = 0 - 1.6 V SD SD GS trr Reverse recovery time ISD = 22 A, VDD = 60 V 328 ns Q Reverse recovery charge di/dt=100 A/µs - 5 nC rr I Reverse recovery current (see Figure20) 30.5 A RRM I = 22 A,V = 60 V t Reverse recovery time SD DD 392 ns rr di/dt=100 A/µs, Q Reverse recovery charge - 6.5 nC rr T = 150 °C J I Reverse recovery current 32.8 A RRM (see Figure20) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Doc ID 023436 Rev 1 5/21

Electrical characteristics STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK and Figure 3. Thermal impedance for for D2PAK TO-220 and TO-220 ID AM13087v1 (A) Tj=150°C Tc=25°C Single pulse 10 Operatimiotne idn tbyh is maarx eaR iDsS(on) 11100m0µsµss Li 10ms 1 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP ID AM13088v1 (A) Tj=150°C Tc=25°C 10 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 11S00in0µgµsles pulse Li 1ms 1 10ms 0.1 0.01 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID AM13089v1 (A) Tj=150°C Tc=25°C Single pulse 10 Operatimiotne id n btyh ism aarx eaR iDsS(on) 11100m0µsµss Li 10ms 1 0.1 0.1 1 10 100 VDS(V) 6/21 Doc ID 023436 Rev 1

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics ID(A) AM13090v1 ID(A) AM13091v1 VGS=10V VDS=21V 60 60 6V 50 50 40 40 30 30 5V 20 20 10 10 4V 0 0 0 5 10 15 20 25 30 VDS(V) 0 2 4 6 8 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance VGS AM13092v1 RDS(on) AM13093v1 (V) VDS VDD=400V 4V0D0S(V) (Ω) VGS=10V 12 ID=22A 0.104 350 10 300 0.102 8 250 0.100 6 200 150 0.098 4 100 0.096 2 50 0 0 0.094 0 10 20 30 40 50 60 Qg(nC) 0 5 10 15 20 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM14903v1 Eoss(µJ) AM14904v1 (pF) 10 10000 9 8 Ciss 7 1000 6 5 100 Coss 4 3 10 Crss 2 1 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 VDS(V) Doc ID 023436 Rev 1 7/21

Electrical characteristics STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs vs temperature temperature VGS(th) AM14905v1 RDS(on) AM14906v1 (norm) ID=250µA (norm) ID=11A 1.10 2.1 1.9 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Normalized V vs temperature Figure 17. Source-drain diode forward DS characteristics VDS AM09028v1 VSD AM14908v1 (norm) ID=1mA (V) 1.10 1.4 TJ=-50°C 1.08 1.2 1.06 TJ=25°C 1.0 1.04 1.02 0.8 TJ=150°C 1.00 0.6 0.98 0.4 0.96 0.2 0.94 0.92 0 -50 -25 0 25 50 75 100 TJ(°C) 0 2 4 6 8 10 12 14 16 18 20 22 ISD(A) 8/21 Doc ID 023436 Rev 1

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Test circuits 3 Test circuits Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 023436 Rev 1 9/21

Package mechanical data STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 7. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° 10/21 Doc ID 023436 Rev 1

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Package mechanical data Figure 24. D²PAK (TO-263) drawing 0079457_T Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters Doc ID 023436 Rev 1 11/21

Package mechanical data STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N T able 8. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 12/21 Doc ID 023436 Rev 1

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Package mechanical data Figure 26. TO-220FP drawing 7012510_Rev_K_B Doc ID 023436 Rev 1 13/21

Package mechanical data STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Table 9. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 14/21 Doc ID 023436 Rev 1

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 023436 Rev 1 15/21

Package mechanical data STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Table 10. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 16/21 Doc ID 023436 Rev 1

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Package mechanical data Figure 28. TO-247 drawing 0075325_G Doc ID 023436 Rev 1 17/21

Packaging mechanical data STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N 5 Packaging mechanical data Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 18/21 Doc ID 023436 Rev 1

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Packaging mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Doc ID 023436 Rev 1 19/21

Revision history STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N 6 Revision history T able 12. Document revision history Date Revision Changes 01-Aug-2012 1 Initial release. 20/21 Doc ID 023436 Rev 1

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