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  • 型号: STW28NM60ND
  • 制造商: STMicroelectronics
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STW28NM60ND产品简介:

ICGOO电子元器件商城为您提供STW28NM60ND由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STW28NM60ND价格参考。STMicroelectronicsSTW28NM60ND封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 600V 23A(Tc) 190W(Tc) TO-247。您可以下载STW28NM60ND参考资料、Datasheet数据手册功能说明书,资料中有STW28NM60ND 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET N-CH 600V 23A TO-247MOSFET N-chanel 600 V 0.120 Ohm typ 24 A

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

23 A

Id-连续漏极电流

23 A

品牌

STMicroelectronics

产品手册

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产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STW28NM60NDFDmesh™ II

数据手册

点击此处下载产品Datasheet

产品型号

STW28NM60ND

Pd-PowerDissipation

190 W

Pd-功率耗散

190 W

Qg-GateCharge

62.5 nC

Qg-栅极电荷

62.5 nC

RdsOn-Drain-SourceResistance

150 mOhms

RdsOn-漏源导通电阻

150 mOhms

Vds-Drain-SourceBreakdownVoltage

650 V

Vds-漏源极击穿电压

650 V

Vgs-Gate-SourceBreakdownVoltage

+/- 25 V

Vgs-栅源极击穿电压

25 V

Vgsth-Gate-SourceThresholdVoltage

4 V

Vgsth-栅源极阈值电压

4 V

上升时间

21.5 ns

下降时间

27 ns

不同Id时的Vgs(th)(最大值)

5V @ 250µA

不同Vds时的输入电容(Ciss)

2090pF @ 100V

不同Vgs时的栅极电荷(Qg)

62.5nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

150 毫欧 @ 11.5A, 10V

产品种类

MOSFET

供应商器件封装

TO-247

其它名称

497-14202-5

典型关闭延迟时间

92 ns

功率-最大值

190W

包装

管件

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-247-3

封装/箱体

TO-247-3

工厂包装数量

30

晶体管极性

N-Channel

标准包装

30

漏源极电压(Vdss)

600V

电流-连续漏极(Id)(25°C时)

23A (Tc)

系列

STW28NM60ND

配置

Single

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PDF Datasheet 数据手册内容提取

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages - Datasheet production data Features TAB V DS @ 2 Order codes RDS(on) max ID 1 3 3 TJ max. 2 D2 PAK TO-220FP1 STB28NM60ND STF28NM60ND TAB 650 V 0.150 Ω 23 A STP28NM60ND STW28NM60ND 123 2233 • Intrinsic fast-recovery body diode 11 TO-220 TO-247 • 100% avalanche tested • Low input capacitance and gate charge Figure 1. Internal schematic diagram • Low gate input resistance • Extremely high dv/dt and avalanche capabilities (cid:39)(cid:11)(cid:21)(cid:15)(cid:262)(cid:55)(cid:36)(cid:37)(cid:12) Applications • Switching applications (cid:42)(cid:11)(cid:20)(cid:12) Description These FDmesh™ II Power MOSFETs with (cid:54)(cid:11)(cid:22)(cid:12) intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical (cid:36)(cid:48)(cid:19)(cid:20)(cid:23)(cid:26)(cid:24)(cid:89)(cid:20) structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Packages Packaging STB28NM60ND D2PAK Tape and reel STF28NM60ND TO-220FP 28NM60ND STP28NM60ND TO-220 Tube STW28NM60ND TO-247 May 2014 DocID024520 Rev 3 1/22 This is information on a product in full production. www.st.com 22

Contents STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 D2PAK, STB28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220FP, STF28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 TO-220, STP28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.4 TO-247, STW28NM60ND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 DocID024520 Rev 3

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter D2PAK, TO-220, Unit TO-220FP TO-247 V Drain-source voltage 600 V DS V Gate-source voltage ±25 V GS I Drain current (continuous) at T = 25 °C 23 23(1) A D C I Drain current (continuous) at T = 100 °C 14.5 14.5(1) A D C I (2) Drain current (pulsed) 92 92(1) A DM P Total dissipation at T = 25 °C 190 35 W TOT C dv/dt(3) Peak diode recovery voltage slope 40 V/ns Insulation withstand voltage (RMS) from V all three leads to external heat sink 2500 V ISO (t=1 s; T =25 °C) C T Storage temperature –55 to 150 °C stg T Max. operating junction temperature 150 °C J 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. I ≤ 23 A, di/dt ≤ 600 A/μs, V = 80% V SD DD (BR)DSS Table 3. Thermal data Symbol Parameter D²PAK TO-220FP TO-220 TO-247 Unit R Thermal resistance junction-case max 0.66 3.6 0.66 °C/W thj-case R Thermal resistance junction-ambient max 62.5 50 °C/W thj-amb R (1) Thermal resistance junction-pcb max 30 °C/W thj-pcb 1. When mounted on 1inch² FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter Max value Unit Avalanche current, repetitive or not- I 5 A AR repetitive (pulse width limited by T max) J Single pulse avalanche energy E 450 mJ AS (starting T = 25 °C, I = I , V = 50 V) J D AS DD DocID024520 Rev 3 3/22

Electrical characteristics STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 2 Electrical characteristics (T =25 °C unless otherwise specified). CASE Table 5. On/off states Value Symbol Parameter Test conditions Unit Min. Typ. Max. Drain-source V I = 1 mA, V = 0 600 V (BR)DSS breakdown voltage D GS V = 480 V, I = 23 A, dv/dt(1) Drain source voltage slope DD D 45 V/ns V = 10 V GS Zero gate voltage VDS = 600 V 1 μA I DSS drain current (VGS = 0) VDS = 600 V, TC= 125 °C 100 μA Gate-body leakage I V = ± 20 V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 μA 3 4 5 V GS(th) DS GS D Static drain-source on RDS(on) resistance VGS = 10 V, ID = 11.5 A 0.13 0.15 Ω 1. Characteristic value at turn off on inductive load. Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance - 2090 - pF iss Coss Output capacitance VDS = 100 V, f = 1 MHz, - 90 - pF V = 0 Reverse transfer GS C - 5.5 - pF rss capacitance Equivalent output C (1) V = 0, V = 0 to 480 V - 312 - pF oss eq. capacitance GS DS t Turn-on delay time - 23.5 - ns d(on) V = 300 V, I = 11.5 A DD D tr Rise time RG=4.7 Ω VGS = 10 V - 21.5 - ns t Turn-off delay time (see Figure 18), - 92 - ns d(off) (see Figure 20) t Fall time - 27 - ns f Q Total gate charge - 62.5 - nC g V = 480 V, I = 23 A, DD D Q Gate-source charge V = 10 V, - 11 - nC gs GS (see Figure 10) Q Gate-drain charge - 38 - nC gd f = 1 MHz, R Gate input resistance test signal level = 20 mV, - 4.7 - Ω g I = 0 D 1. C . is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq oss DS increases from 0 to 80% V DSS 4/22 DocID024520 Rev 3

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current - 23 A SD I (1) Source-drain current (pulsed) - 92 A SDM V (2) Forward on voltage I = 23 A, V = 0 - 1.6 V SD SD GS t Reverse recovery time - 170 ns rr I = 23 A, V = 60 V SD DD Q Reverse recovery charge di/dt=100 A/μs - 1160 nC rr (see Figure 17) I Reverse recovery current - 14 A RRM t Reverse recovery time I = 23 A,V = 60 V - 237 ns rr SD DD di/dt=100 A/μs, Q Reverse recovery charge - 2090 nC rr T = 150 °C J IRRM Reverse recovery current (see Figure 17) - 18 A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%. DocID024520 Rev 3 5/22

Electrical characteristics STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK and Figure 3. Thermal impedance for D2PAK and TO-220 TO-220 ID AM16038v1 (A) 10 Operatimoitn eidn tbhyi s maarxe aR isDS(on) 11100m0µsµss Li 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP ID AM16039v1 (A) 10 Operatmiitoen di nb ty hims aaxr eRa DiSs(on) 11000µµss Li 1 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID AM16040v1 (A) 10 Operatimoitn eidn tbhy is maarxe aR isDS(on) 11100m0µsµss Li 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) 6/22 DocID024520 Rev 3

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM16041v1 AM16042v1 ID ID(A) (A) VGS=10V 9V VDS=19V 60 60 8V 50 50 40 40 7V 30 30 20 20 6V 10 10 0 5V 0 0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance VGS AMV1D6S043v1 RDS(on) AM16044v1 (V) (V) (Ω) 12 VDD=480V 0.136 VGS=10V ID=23A 500 VDS 0.134 10 400 0.132 8 300 0.130 6 0.128 200 4 0.126 100 2 0.124 0 0 0.122 0 10 20 30 40 50 60 70 Qg(nC) 0 5 10 15 20 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C AM16045v1 Eoss AM16046v1 (pF) (µJ) 12 10000 10 Ciss 1000 8 6 100 Coss 4 10 Crss 2 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V) DocID024520 Rev 3 7/22

Electrical characteristics STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Figure 14. Normalized gate threshold voltage vs Figure 15. Normalized on-resistance vs temperature temperature VGS(th) AM16047v1 RDS(on) AM16048v1 (norm) (norm) 1.10 ID=250µA 2.1 ID=11.5A VGS=10V 1.9 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Source-drain diode forward Figure 17. Normalized V vs temperature DS characteristics VSD AM16050v1 VDS AM16049v1 (V) (norm) 1.10 1.4 ID=1mA 1.08 1.2 TJ=-50°C 1.06 1 1.04 0.8 1.02 TJ=150°C 1.00 0.6 TJ=25°C 0.98 0.4 0.96 0.2 0.94 0 0.92 0 4 8 12 16 20 ISD(A) -50 -25 0 25 50 75 100 TJ(°C) 8/22 DocID024520 Rev 3

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Test circuits 3 Test circuits Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 DocID024520 Rev 3 9/22

Package mechanical data STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/22 DocID024520 Rev 3

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Package mechanical data 2 4.1 D PAK, STB28NM60ND Figure 24. D²PAK (TO-263) drawing 0079457_T DocID024520 Rev 3 11/22

Package mechanical data STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters 12/22 DocID024520 Rev 3

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Package mechanical data 4.2 TO-220FP, STF28NM60ND Figure 26. TO-220FP drawing 7012510_Rev_K_B DocID024520 Rev 3 13/22

Package mechanical data STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 14/22 DocID024520 Rev 3

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Package mechanical data 4.3 TO-220, STP28NM60ND Figure 27. TO-220 type A drawing (cid:19)(cid:19)(cid:20)(cid:24)(cid:28)(cid:27)(cid:27)(cid:66)(cid:87)(cid:92)(cid:83)(cid:72)(cid:36)(cid:66)(cid:53)(cid:72)(cid:89)(cid:66)(cid:55) DocID024520 Rev 3 15/22

Package mechanical data STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 16/22 DocID024520 Rev 3

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Package mechanical data 4.4 TO-247, STW28NM60ND Figure 28. TO-247 drawing 0075325_G DocID024520 Rev 3 17/22

Package mechanical data STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Table 11. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 18/22 DocID024520 Rev 3

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Packing mechanical data 5 Packing mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 DocID024520 Rev 3 19/22

Packing mechanical data STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 20/22 DocID024520 Rev 3

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Revision history 6 Revision history Table 13. Document revision history Date Revision Changes 15-Apr-2013 1 First release. – Document status changed from preliminary to production data – Modified: typical values in Table6 and 7 25-Nov-2013 2 – Added: Section2.1: Electrical characteristics (curves) – Updated: Table10 and Figure27 – Minor text changes – Modified: E value in Table4 05-May-2014 3 AS – Minor text changes DocID024520 Rev 3 21/22

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