STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Ω N-channel 600 V, 0.65 typ., 10 A SuperMESH™ Power MOSFET 2 2 in I PAK, D PAK, TO-220, TO-220FP, TO-247 packages − Datasheet production data Features TAB R Type V DS(on) I P DSS max D w TAB STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W 123 123 STB10NK60ZT4 600 V < 0.75 Ω 10 A 115 W I2PAK TO-220FP STP10NK60Z 600 V < 0.75 Ω 10 A 115 W STP10NK60ZFP 600 V < 0.75 Ω 10 A 35 W TAB 123 STW10NK60Z 600 V < 0.75 Ω 10 A 156 W TO-220 ■ Extremely high dv/dt capability 3 3 1 2 1 ■ 100% avalanche tested D2PAK TO-247 ■ Gate charge minimized ■ Zener-protected Figure 1. Internal schematic diagram Applications ■ Switching applications Description These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well- established strip-based PowerMESH™ layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STB10NK60Z-1 B10NK60Z I²PAK Tube STB10NK60ZT4 B10NK60Z D²PAK Tape and reel STP10NK60Z P10NK60Z TO-220 Tube STP10NK60ZFP P10NK60ZFP TO-220FP Tube STW10NK60Z W10NK60Z TO-247 Tube November 2012 Doc ID 8526 Rev 11 1/24 This is information on a product in full production. www.st.com 24

Contents STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2/24 Doc ID 8526 Rev 11

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value I²PAK Symbol Parameter Unit D²PAK TO-220FP TO-247 TO-220 V Drain-source voltage 600 V DS V Gate-source voltage ± 30 V GS I Drain current (continuous) at T = 25 °C 10 10(1) 10 A D C I Drain current (continuous) at T = 100 °C 5.7 5.7 (1) 5.7 A D C I (2) Drain current (pulsed) 36 36 (1) 36 A DM P Total dissipation at T = 25 °C 115 35 156 W TOT C Derating factor 0.92 0.28 1.25 W/°C Gate-source human body model ESD 4 kV (R = 1,5kΩ, C = 100 pF) dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns Insulation withstand voltage (RMS) from V all three leads to external heat sink -- 2500 -- V ISO (t=1 s;TC=25 °C) T Operating junction temperature j -55 to 150 °C T Storage temperature stg 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. I < 10A, di/dt < 200A/µs, V =80% V SD DD (BR)DSS Table 3. Thermal data Value Symbol Parameter Unit I²PAK TO-220 TO-220FP TO-247 D²PAK Rthj-case Thermal resistance junction-case max 1.09 3.6 0.8 °C/W Thermal resistance junction-pcb max Rthj-pcb 35 °C/W (when mounted on minimum footprint) Rthj-amb Thermal resistance junction-amb max 62.5 50 °C/W Doc ID 8526 Rev 11 3/24

Electrical ratings STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Table 4. Avalanche characteristics Symbol Parameter Max value Unit Avalanche current, repetitive or not-repetitive I 9 A AR (pulse width limited by Tj max) Single pulse avalanche energy E 300 mJ AS (starting Tj=25 °C, I =I , V = 50 V) D AR DD Repetitive avalanche energy E 3.5 mJ AR (pulse width limited by Tj max) 4/24 Doc ID 8526 Rev 11

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 250 µA, V = 0 600 V (BR)DSS voltage D GS I Zero gate voltage drain VDS = 600 V, 1 µA DSS current (VGS = 0) VDS = 600 V, TC=125 °C 50 µA Gate body leakage IGSS current (V = 0) VGS = ± 20 V ±10 µA DS V Gate threshold voltage V = V , I = 250 µA 3 3.75 4.5 V GS(th) DS GS D Static drain-source on- R V = 10 V, I = 4.5 A 0.65 0.75 Ω DS(on) resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V =15 V, I = 4.5 A 7.8 S fs transconductance DS D Input capacitance C 1370 pF iss Output capacitance C V =25 V, f=1 MHz, V =0 156 pF oss DS GS Reverse transfer C 37 pF rss capacitance - Equivalent output C (2) V =0, V =0 to 480 V 90 pF oss eq capacitance GS DS Q Total gate charge 50 70 nC g V =480 V, I = 8 A Q Gate-source charge DD D 10 nC gs V =10 V (see Figure 20) Q Gate-drain charge GS 25 nC gd 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. C . is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq oss DS increases from 0 to 80% Doc ID 8526 Rev 11 5/24

Electrical characteristics STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit V =300 V, I =4 A, t Turn-on delay time DD D 20 ns d(on) R =4.7 Ω, V =10 V t Rise time G GS 20 ns r (see Figure 19) - - V =300 V, I =4 A, t Turn-off delay time DD D 55 ns d(off) R =4.7 Ω, V =10 V t Fall time G GS 30 ns f (see Figure 19) Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 10 A SD I (1) Source-drain current (pulsed) 36 A SDM V (2) Forward on voltage I =10 A, V =0 1.6 V SD SD GS - t Reverse recovery time 570 ns rr I =8 A, di/dt = 100 A/µs, Q Reverse recovery charge SD 4.3 µC rr V =40 V, Tj=150 °C DD I Reverse recovery current 15 A RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 9. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit Gate-source breakdown V Igs=± 1 mA, (I = 0) 30 - - V (BR)GSO voltage D The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components 6/24 Doc ID 8526 Rev 11

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for I²PAK, Figure 3. Thermal impedance for I²PAK, D²PAK and TO-220 D²PAK and TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Doc ID 8526 Rev 11 7/24

Electrical characteristics STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on-resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 8/24 Doc ID 8526 Rev 11

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Electrical characteristics Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs vs temperature temperature Figure 16. Source-drain diode forward Figure 17. Maximum avalanche energy vs characteristics temperature Figure 18. Normalized B vs temperature VDSS Doc ID 8526 Rev 11 9/24

Test circuits STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z 3 Test circuits Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 10/24 Doc ID 8526 Rev 11

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 10. I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Doc ID 8526 Rev 11 11/24

Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 25. I²PAK (TO-262) drawing 0004982_Rev_H 12/24 Doc ID 8526 Rev 11

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Package mechanical data Table 11. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0° 8° Doc ID 8526 Rev 11 13/24

Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 26. D²PAK (TO-263) drawing 0079457_T Figure 27. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters 14/24 Doc ID 8526 Rev 11

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Package mechanical data Table 12. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 Doc ID 8526 Rev 11 15/24

Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 28. TO-220 type A drawing 0015988_typeA_Rev_S 16/24 Doc ID 8526 Rev 11

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Package mechanical data Table 13. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 8526 Rev 11 17/24

Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 29. TO-220FP drawing 7012510_Rev_K_B 18/24 Doc ID 8526 Rev 11

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Package mechanical data Table 14. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 Doc ID 8526 Rev 11 19/24

Package mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 30. TO-247 drawing 0075325_G 20/24 Doc ID 8526 Rev 11

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Packaging mechanical data 5 Packaging mechanical data Table 15. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 8526 Rev 11 21/24

Packaging mechanical data STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Figure 31. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 32. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 22/24 Doc ID 8526 Rev 11

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Revision history 6 Revision history Table 16. Document revision history Date Revision Changes 29-Sep-2005 6 Inserted ecopack indication 29-Oct-2005 7 New value inserted in Table6 11-Apr-2006 8 New template 19-Sep-2006 9 Unit changed in Table5 17-Nov-2008 10 Updated Section4: Package mechanical data Updated Table2: Absolute maximum ratings, Table3: Thermal data, Table5: On /off states and Table9: Gate-source Zener diode. 15-Nov-2012 11 Updated Section4: Package mechanical data and Section5: Packaging mechanical data. Minor text changes. Doc ID 8526 Rev 11 23/24

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STP10NK60Z STW10NK60Z STB10NK60Z-1 STP10NK60ZFP STB10NK60ZT4