STV300NH02L Ω N-channel 24 V, 0.8 m typ., 200 A STripFET™ III Power MOSFET in a PowerSO-10 package Datasheet — production data Features Order code V R max I DSS DS(on) D STV300NH02L 24 V 0.001 Ω 200 A(1) 10 1. This value is limited by package 1 ■ RDS(on)*Qg industry’s benchmark PowerSO-10 ■ Conduction losses reduced ■ Low profile, very low parasitic inductance ■ Switching losses reduced Applications Figure 1. Internal schematic diagram ■ Switching applications – OR-ing ■ Specially designed and optimized for high efficiency DC/DC converters. Description This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical Figure 2. Connection diagram (top view) alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging STV300NH02L 300NH02L PowerSO-10 Tape and reel October 2012 Doc ID 13301 Rev 3 1/14 This is information on a product in full production. www.st.com 14

Content STV300NH02L Content 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 Doc ID 13301 Rev 3

STV300NH02L Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 24 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 200 A ID (1) Drain current (continuous) at TC = 100 °C 200 A I (2) Drain current (pulsed) 800 A DM PTOT (3) Total dissipation at TC = 25°C 300 W Derating factor 2 W/°C E (4) Single pulse avalanche energy 1.6 J AS Tstg Storage temperature -55 to 175 °C Tj Operating junction temperature 1. This value is limited by package 2. Pulse with limited by safe operating area 3. This value is rated according to Rthj-c 4. Starting Tj = 25°C, I = 60A, V = 20V D DD Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb max 35 °C/W 1. When mounted on 1 inch2 FR-4, 2 oz Cu Doc ID 13301 Rev 3 3/14

Electrical characteristics STV300NH02L 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V(BR)DSS breakdown voltage ID = 1 mA 24 V (V = 0) GS Zero gate voltage drain VDS = 24 V 1 µA I DSS current (VGS = 0) VDS = 24 V, Tc=125 °C 10 µA Gate body leakage IGSS current (V = 0) VDS = ± 20 V ±100 nA DS VGS(th) Gate threshold voltage VDS= VGS, ID = 250 μA 1 1.5 2.5 V RDS(on) Sretsaitsicta dnrcaein-source on- VVGS== 150 V ,V ,I DI== 4 080 A A 10..185 11.5 mΩ GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance 7055 pF Output capacitance Coss VDS = 15V, f = 1 MHz, VGS =0 - 3251 - pF Reverse transfer C 307 pF rss capacitance Qg Total gate charge VDD= 12V, ID= 120A, 109 nC Qgs Gate-source charge VGS= 10V - 30 - nC Qgd Gate-drain charge (see Figure 15) 26 nC RG Gate input resistance VDS = 0V, f = 1 MHz, VGS =0 - 4.4 - Ω Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit V = 12V, I = 60A td(on) Turn-on delay time RDD= 4.7Ω, VD = 10V, - 18 - ns t Rise time G GS 275 ns r (see Figure 14) V = 12V, I = 60A td(off) Turn-off delay time RDD= 4.7Ω, VD = 10V, - 138 - ns t Fall time G GS 94.4 ns f (see Figure 14) 4/14 Doc ID 13301 Rev 3

STV300NH02L Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 200 A - I Source-drain current (pulsed) 800 A SDM VSD (1) Forward on voltage ISD = 120A, VGS = 0 - 1.3 V trr Reverse recovery time ISD = 120A, di/dt = 100A/µs 63 ns Qrr Reverse recovery charge VDD = 20V, Tj = 25°C - 85 nC IRRM Reverse recovery current (see Figure 19) 2.7 A trr Reverse recovery time ISD = 120A, di/dt = 100A/µs 63 ns Qrr Reverse recovery charge VDD = 20V, Tj = 150°C - 88 nC IRRM Reverse recovery current (see Figure 19) 2.8 A 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 13301 Rev 3 5/14

Electrical characteristics STV300NH02L 2.1 Electrical characteristics (curves) Figure 3. Safe operating area Figure 4. Thermal impedance ID AM14955v1 K Zth_PowerSO-10 1(0A0) OpLiermaittieodn ibny thmisa x arReDa Si(son) 100µs δ0=.20.5 0.1 1ms 10-1 0.05 10 0.02 10ms 0.01 Tj=175°C 10-2 1 Tc=25°C Single pulse Single pulse 0.1 10-3 0.1 1 10 VDS(V) 10-5 10-4 10-3 10-2 10-1 tp(s) Figure 5. Output characteristics Figure 6. Transfer characteristics Figure 7. Static drain-source on-resistance Figure 8. Normalized BV vs temperature DSS 6/14 Doc ID 13301 Rev 3

STV300NH02L Electrical characteristics Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage Figure 12. Normalized on-resistance vs vs temperature temperature Figure 13. Source-drain diode forward characteristics Doc ID 13301 Rev 3 7/14

Test circuits STV300NH02L 3 Test circuits Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 8/14 Doc ID 13301 Rev 3

STV300NH02L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. PowerSO-10 mechanical data mm Dim. Min. Typ. Max. A 3.70 A1 0.00 0.10 A2 3.40 3.60 A3 1.25 1.35 b 0.40 0.53 c 0.35 0.55 D 9.40 9.60 D1 7.40 7.60 E 13.80 14.40 E1 9.30 9.50 E2 7.20 7.60 E3 5.90 6.10 e 1.27 L 0.95 1.65 < 0o 8o Doc ID 13301 Rev 3 9/14

Package mechanical data STV300NH02L Figure 20. PowerSO-10 drawing 0068039F1_Rev.E 10/14 Doc ID 13301 Rev 3

STV300NH02L Packaging mechanical data 5 Packaging mechanical data Table 9. Carrier tape dimensions mm Ref. Min. Typ. Max. A0 14.9 15.0 15.1 B0 9.9 10.0 10.1 K0 4.15 4.25 4.35 F 11.4 11.5 11.6 E 1.65 1.75 1.85 W 23.7 24.0 24.3 P2 1.9 2.0 2.1 P0 3.9 4.0 4.1 P1 23.9 24.0 24.1 T 0.025 0.30 0.35 D(Ø) 1.50 1.55 1.60 Note: 10 sprocket hole pitch cumulative tolerance ±0.2 mm. Figure 21. Carrier tape drawing (a) (cid:33)(cid:45)(cid:16)(cid:22)(cid:16)(cid:19)(cid:23)(cid:86)(cid:17) a. Drawing is not to scale. Doc ID 13301 Rev 3 11/14

Packaging mechanical data STV300NH02L Table 10. Reel dimensions mm Ref. Min. Typ. Max. A 330 B 1.5 C 12.8 13 13.2 D 20.2 N 60 G 24.4 T 30.4 Note: 10 sprocket hole pitch cumulative tolerance ±0.2 mm. Figure 22. Reel drawing (b) (cid:52)(cid:0) (cid:20)(cid:16)(cid:77)(cid:77)(cid:0)(cid:77)(cid:73)(cid:78)(cid:14)(cid:0) (cid:33)(cid:67)(cid:67)(cid:69)(cid:83)(cid:83)(cid:0)(cid:72)(cid:79)(cid:76)(cid:69)(cid:0) (cid:33)(cid:84)(cid:0)(cid:83)(cid:76)(cid:79)(cid:84)(cid:0)(cid:76)(cid:79)(cid:67)(cid:65)(cid:84)(cid:73)(cid:79)(cid:78) (cid:34)(cid:0) (cid:36)(cid:0) (cid:35)(cid:0) (cid:46)(cid:0) (cid:33)(cid:0) (cid:39)(cid:0)(cid:77)(cid:69)(cid:65)(cid:83)(cid:85)(cid:82)(cid:69)(cid:68)(cid:0) (cid:52)(cid:65)(cid:80)(cid:69)(cid:0)(cid:83)(cid:76)(cid:79)(cid:84)(cid:0) (cid:41)(cid:78)(cid:0)(cid:67)(cid:79)(cid:82)(cid:69)(cid:0)(cid:70)(cid:79)(cid:82)(cid:0) (cid:38)(cid:85)(cid:76)(cid:76)(cid:0)(cid:82)(cid:65)(cid:68)(cid:73)(cid:85)(cid:83)(cid:0) (cid:33)(cid:84)(cid:0)(cid:72)(cid:85)(cid:66) (cid:52)(cid:65)(cid:80)(cid:69)(cid:0)(cid:83)(cid:84)(cid:65)(cid:82)(cid:84)(cid:0) (cid:18)(cid:14)(cid:21)(cid:77)(cid:77)(cid:0)(cid:77)(cid:73)(cid:78)(cid:14)(cid:87)(cid:73)(cid:68)(cid:84)(cid:72)(cid:0) (cid:33)(cid:45)(cid:16)(cid:22)(cid:16)(cid:19)(cid:24)(cid:86)(cid:17) Table 11. Base/bulk quantities Base qty. Bulk qty. 600 b. Drawing is not to scale. 12/14 Doc ID 13301 Rev 3

STV300NH02L Revision history 6 Revision history T able 12. Revision history Date Revision Changes 08-Feb-2007 1 First release 13-Sep-2007 2 New section has been added: 2.1: Electrical characteristics (curves). Updated Table4: On /off states and Section4: Package mechanical data. 10-Oct-2012 3 Inserted Section5: Packaging mechanical data. Minor text changes. Doc ID 13301 Rev 3 13/14

STV300NH02L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 Doc ID 13301 Rev 3

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STV300NH02L