ICGOO在线商城 > 分立半导体产品 > 晶体管 - FET,MOSFET - 单 > STU85N3LH5
数量阶梯 | 香港交货 | 国内含税 |
+xxxx | $xxxx | ¥xxxx |
查看当月历史价格
查看今年历史价格
STU85N3LH5产品简介:
ICGOO电子元器件商城为您提供STU85N3LH5由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STU85N3LH5价格参考¥1.61-¥1.86。STMicroelectronicsSTU85N3LH5封装/规格:晶体管 - FET,MOSFET - 单, N-Channel 30V 80A (Tc) 70W (Tc) Through Hole I-PAK。您可以下载STU85N3LH5参考资料、Datasheet数据手册功能说明书,资料中有STU85N3LH5 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | MOSFET N-CH 30V 80A IPAK |
产品分类 | FET - 单 |
FET功能 | 逻辑电平门 |
FET类型 | MOSFET N 通道,金属氧化物 |
品牌 | STMicroelectronics |
数据手册 | |
产品图片 | |
产品型号 | STU85N3LH5 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | STripFET™ V |
不同Id时的Vgs(th)(最大值) | 2.5V @ 250µA |
不同Vds时的输入电容(Ciss) | 1850pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 14nC @ 5V |
不同 Id、Vgs时的 RdsOn(最大值) | 5.4 毫欧 @ 40A,10V |
供应商器件封装 | I-Pak |
其它名称 | 497-12702-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1164/PF174525?referrer=70071840 |
功率-最大值 | 70W |
包装 | 管件 |
安装类型 | 通孔 |
封装/外壳 | TO-251-3 短引线,IPak,TO-251AA |
标准包装 | 75 |
漏源极电压(Vdss) | 30V |
电流-连续漏极(Id)(25°C时) | 80A (Tc) |
STD85N3LH5 STP85N3LH5, STU85N3LH5 Ω N-channel 30 V, 0.0042 , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET Features Type V R max. I DSS DS(on) D 3 STD85N3LH5 3 1 2 STP85N3LH5 30 V < 0.005 Ω 80 A 1 DPAK STU85N3LH5 IPAK ■ R * Q industry benchmark DS(on) g ■ Extremely low on-resistance R DS(on) 3 2 ■ High avalanche ruggedness 1 TO-220 ■ Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available R *Q , in the standard DS(on) g packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order codes Marking Package Packaging STD85N3LH5 DPAK Tape and reel STP85N3LH5 85N3LH5 TO-220 Tube STU85N3LH5 IPAK July 2010 Doc ID 13833 Rev 7 1/16 www.st.com 16
Contents STD85N3LH5, STP85N3LH5, STU85N3LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 Doc ID 13833 Rev 7
STD85N3LH5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 30 V DS GS V Drain-source voltage (V = 0) @ T 35 V DS GS JMAX V Gate-source voltage ± 22 V GS I (1) Drain current (continuous) at T = 25 °C 80 A D C I Drain current (continuous) at T = 100 °C 55 A D C I (2) Drain current (pulsed) 320 A DM P Total dissipation at T = 25 °C 70 W TOT C Derating factor 0.47 W/°C E (3) Single pulse avalanche energy 165 mJ AS T Storage temperature -55 to 175 °C stg T Max. operating junction temperature 175 °C j 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, I = 40 A, V = 25 V D DD Table 3. Thermal resistance Value Symbol Parameter Unit TO-220 DPAK IPAK R Thermal resistance junction-case max 2.14 °C/W thj-case R Thermal resistance junction-amb max 62.5 100 °C/W thj-amb R Thermal resistance junction-pcb max 100 °C/W thj-pcb Maximum lead temperature for T 275 °C l soldering purpose Doc ID 13833 Rev 7 3/16
Electrical characteristics STD85N3LH5, STP85N3LH5, STU85N3LH5 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 250 µA, V = 0 30 V (BR)DSS Voltage D GS I Zero gate voltage drain VDS = 30 V 1 µA DSS current (VGS = 0) VDS = 30 V,Tc = 125 °C 10 µA Gate body leakage current IGSS (V = 0) VGS = ± 22 V ±100 nA DS V Gate threshold voltage V = V , I = 250 µA 1 1.8 2.5 V GS(th) DS GS D V = 10 V, I = 40 A GS D 0.042 0.005 Ω SMD version Static drain-source on VGS = 10 V, ID = 40 A 0.0046 0.0054 Ω R DS(on) resistance V = 5 V, I = 40 A GS D 0.0052 0.0065 Ω SMD version V = 5 V, I = 40 A 0.0058 0.0071 Ω GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 1850 pF Ciss Output capacitance VDS = 25 V, f=1 MHz, 380 pF Coss Reverse transfer VGS = 0 58 pF rss capacitance Q Total gate charge V = 15 V, I = 80 A 14 nC g DD D Q Gate-source charge V = 5 V 6.8 nC gs GS Q Gate-drain charge Figure16 4.7 nC gd Pre V gate-to-source Q th V = 15 V, I = 80 A 2.3 nC gs1 charge DD D V = 5 V Post V gate-to-source GS Q th Figure16 4.5 nC gs2 charge f = 1 MHz gate bias Bias = 0 test signal R Gate input resistance 1.2 Ω G level = 20 mV open drain 4/16 Doc ID 13833 Rev 7
STD85N3LH5 Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time 6 ns d(on) V = 15 V, I = 40 A, t Rise time DD D 14 ns r R = 4.7 Ω, V = 5 V G GS t Turn-off delay time 23.6 ns d(off) Figure15 t Fall time 10.8 ns f Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current 80 A SD I (1) Source-drain current (pulsed) 320 A SDM V (2) Forward on voltage I = 40 A, V = 0 1.1 V SD SD GS I = 80 A, t Reverse recovery time SD 31.8 ns rr di/dt = 100 A/µs, Q Reverse recovery charge 26.1 nC rr V = 20 V I Reverse recovery current DD 1.6 A RRM Figure17 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 13833 Rev 7 5/16
Electrical characteristics STD85N3LH5, STP85N3LH5, STU85N3LH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics ID AM03359v1 (A) 160 140 120 100 80 60 40 20 0 0 1 2 3 VGS(V) Figure 6. Normalized B vs temperature Figure 7. Static drain-source on resistance VDSS 6/16 Doc ID 13833 Rev 7
STD85N3LH5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature Figure 12. Source-drain diode forward characteristics Doc ID 13833 Rev 7 7/16
Test circuit STD85N3LH5, STP85N3LH5, STU85N3LH5 3 Test circuit Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2µ20F0 3µ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 8/16 Doc ID 13833 Rev 7
STD85N3LH5 Test circuit Figure 19. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Doc ID 13833 Rev 7 9/16
Package mechanical data STD85N3LH5, STP85N3LH5, STU85N3LH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 13833 Rev 7
STD85N3LH5 Package mechanical data TO-220 type A mechanical data mm Dim Min Typ Max A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 0015988_Rev_S Doc ID 13833 Rev 7 11/16
Package mechanical data STD85N3LH5, STP85N3LH5, STU85N3LH5 TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 12/16 Doc ID 13833 Rev 7
STD85N3LH5 Package mechanical data TO-252 (DPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0 o 8o 0068772_G Doc ID 13833 Rev 7 13/16
Packaging mechanical data STD85N3LH5, STP85N3LH5, STU85N3LH5 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 14/16 Doc ID 13833 Rev 7
STD85N3LH5 Revision history 6 Revision history T able 8. Document revision history Date Revision Changes 19-Oct-2007 1 First release 20-Feb-2008 2 Minor text changes to improve readability – Added new package, mechanical data: TO-220 – Figure2: Safe operating area has been corrected 21-Jul-2008 3 – Figure7: Static drain-source on resistance updated – New value on Table2: Absolute maximum ratings 20-Aug-2008 4 Added max value on V (Table4) GS(th) 25-Sep-2008 5 V values has been changed on Table2 and Table4 GS 22-Jan-2009 6 Corrected value on Table3: Thermal resistance 01-Jul-2010 7 V values has been changed on Table4 DS Doc ID 13833 Rev 7 15/16
STD85N3LH5, STP85N3LH5, STU85N3LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 Doc ID 13833 Rev 7