STD75N3LLH6, STP75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK STripFET™ VI DeepGATE™ Power MOSFET Features TAB TAB Order codes V R max I DSS DS(on) D 3 STD75N3LLH6 < 0.0055 Ω 3 1 2 STP75N3LLH6 1 DPAK 30 V 75 A STU75N3LLH6 < 0.0059 Ω IPAK TAB STU75N3LLH6-S TAB ■ R * Q industry benchmark DS(on) g 3 ■ Extremely low on-resistance R 2 3 DS(on) 1 2 1 ■ High avalanche ruggedness Short IPAK TO-220 ■ Low gate drive power losses Application Figure 1. Internal schematic diagram Switching applications Description D (TAB or 2) This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET G(1) exhibits the lowest R in all packages. DS(on) S(3) AM01474v1 Table 1. Device summary Order codes Marking Package Packaging STD75N3LLH6 DPAK Tape and reel STP75N3LLH6 TO-220 75N3LLH6 STU75N3LLH6 IPAK Tube STU75N3LLH6-S Short IPAK July 2011 Doc ID 15978 Rev 4 1/21 www.st.com 21

Contents STD/P/U75N3LLH6, STU75N3LLH6-S Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 Doc ID 15978 Rev 4

STD/P/U75N3LLH6, STU75N3LLH6-S Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 30 V DS GS V Gate-source voltage ±20 V GS I (1) Drain current (continuous) at T = 25 °C 75 A D C I Drain current (continuous) at T = 70 °C 56 A D C I Drain current (continuous) at T = 100 °C 47 A D C I (2) Drain current (pulsed) 300 A DM P Total dissipation at T = 25 °C 60 W TOT C Derating factor 0.4 W/°C T Operating junction temperature j -55 to 175 °C T storage temperature stg 1. The value is rated according to Rthj-case 2. Pulse width limited by safe operating area Table 3. Thermal data Value Symbol Parameter Unit Short DPAK TO-220 IPAK IPAK Thermal resistance junction-case R 2.5 °C/W thj-case (drain) (steady state) Thermal resistance junction-amb R 100 62.5 100 °C/W thj-amb max R (1) Thermal resistance junction-pcb max 35 °C/W thj-pcb Maximum lead temperature for T 275 300 275 °C J soldering purpose 1. When mounted on FR-4 board of 1in², 2oz Cu. t < 10 sec Doc ID 15978 Rev 4 3/21

Electrical characteristics STD/P/U75N3LLH6, STU75N3LLH6-S 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250 µA 30 V (BR)DSS breakdown voltage (V = 0) D GS Zero gate voltage V = 30 V 1 µA I DS DSS drain current (V = 0) V =30 V T = 125 °C 10 µA GS DS C Gate-body leakage I V = ± 20 V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 1 1.7 2.5 V GS(th) DS GS D V = 10 V, I = 37.5 A GS D 0.0042 0.0055 Ω SMD version Static drain-source on VGS = 10 V, ID = 37.5 A 0.0046 0.0059 Ω R DS(on) resistance V = 4.5 V, I = 37.5 A GS D 0.0065 0.008 Ω SMD version V = 4.5 V, I = 37.5 A 0.0069 0.0084 Ω GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 1350 1690 2030 pF Ciss Output capacitance VDS = 25 V, f = 1 MHz, 230 290 350 pF Coss Reverse transfer VGS = 0 140 176 210 pF rss capacitance Q Total gate charge V = 15 V, I = 75 A, 17 23.8 nC g DD D Q Gate-source charge V = 4.5 V 8 11.2 nC gs GS Q Gate-drain charge (see Figure14) 6 8.4 nC gd Pre V gate-to-source Q th V =15 V, I = 75 A 3.9 5.5 nC gs1 charge DD D V =5 V Post V gate-to-source GS Q th (Figure19) 4.1 5.7 nC gs2 charge f=1 MHz gate bias R Gate input resistance Bias=0 test signal 1.25 1.7 2 Ω G level=20 mV open drain 4/21 Doc ID 15978 Rev 4

STD/P/U75N3LLH6, STU75N3LLH6-S Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t Turn-on delay time 9.5 ns d(on) V = 15 V, I = 37.5 A t Rise time DD D 30 ns r R =4.7 Ω V = 5 V - - t Turn-off delay time G GS 37 ns d(off) (see Figure13) t Fall time 12 ns f Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current I 75 A SD Source-drain current - I (1) 300 A SDM (pulsed) V (2) Forward on voltage I = 37.5 A, V = 0 - 1.1 V SD SD GS I = 75 A, t Reverse recovery time SD 24 ns rr di/dt = 100 A/µs, Q Reverse recovery charge - 16.8 nC rr V = 24 V I Reverse recovery current DD 1.4 A RRM (see Figure15) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 15978 Rev 4 5/21

Electrical characteristics STD/P/U75N3LLH6, STU75N3LLH6-S 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance (cid:41)(cid:36) (cid:33)(cid:45)(cid:16)(cid:21)(cid:21)(cid:16)(cid:20)(cid:86)(cid:18) K 280dpc (cid:8)(cid:33)(cid:9) δ=0.5 (cid:17)(cid:16)(cid:16) (cid:47)(cid:80)(cid:44)(cid:73)(cid:69)(cid:82)(cid:77)(cid:65)(cid:73)(cid:84)(cid:84)(cid:73)(cid:69)(cid:79)(cid:68)(cid:78)(cid:0)(cid:0)(cid:73)(cid:66)(cid:78)(cid:89)(cid:0)(cid:0)(cid:84)(cid:72)(cid:77)(cid:73)(cid:83)(cid:65)(cid:0)(cid:88)(cid:0)(cid:65)(cid:82)(cid:50)(cid:69)(cid:36)(cid:65)(cid:0)(cid:51)(cid:73)(cid:8)(cid:83)(cid:79)(cid:78)(cid:9) (cid:17)(cid:16)(cid:16)(cid:151)(cid:83) 00.1.2 0.05 (cid:17)(cid:16) 10-1 0.02 Zth=k Rthj-c (cid:52)(cid:74)(cid:29)(cid:17)(cid:23)(cid:21)(cid:160)(cid:35) (cid:17)(cid:77)(cid:83) 0.01 δ=tp/τ (cid:17) (cid:52)(cid:67)(cid:29)(cid:18)(cid:21)(cid:160)(cid:35) (cid:17)(cid:16)(cid:77)(cid:83) (cid:51)(cid:73)(cid:78)(cid:71)(cid:76)(cid:69) (cid:80)(cid:85)(cid:76)(cid:83)(cid:69) Single pulse tpτ (cid:16)(cid:14)(cid:17) 10-2 (cid:16)(cid:14)(cid:17) (cid:17) (cid:17)(cid:16) (cid:54)(cid:36)(cid:51)(cid:8)(cid:54)(cid:9) 10-5 10-4 10-3 10-2 10-1 tp(s) Figure 4. Output characteristics Figure 5. Transfer characteristics ID AM05505v1 (cid:41)(cid:36) (cid:33)(cid:45)(cid:16)(cid:21)(cid:21)(cid:16)(cid:22)(cid:86)(cid:18) (A) (cid:8)(cid:33)(cid:9) VGS=10V 6V (cid:17)(cid:18)(cid:16) 250 5V (cid:17)(cid:16)(cid:16) 200 (cid:24)(cid:16) 150 4V (cid:22)(cid:16) 100 (cid:20)(cid:16) 50 (cid:18)(cid:16) 3V 0 (cid:16) 0 1 2 3 4 5 VDS(V) (cid:16) (cid:17) (cid:18) (cid:19) (cid:20) (cid:54)(cid:39)(cid:51)(cid:8)(cid:54)(cid:9) Figure 6. Normalized BV vs temperature Figure 7. Static drain-source on resistance DSS BVDSS AM05507v1 RDS(on) AM05508v1 (norm) (Ω) 1.06 4.35 1.04 4.30 1.02 4.25 1.00 4.20 0.98 4.15 0.96 4.10 0.94 4.05 0.92 4.00 -50 -25 0 25 50 75 100125 150 TJ(°C) 0 5 10 15 20 25 30 ID(A) 6/21 Doc ID 15978 Rev 4

STD/P/U75N3LLH6, STU75N3LLH6-S Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations VGS AM05509v1 C AM05510v1 (V) (pF) VDD=15V 12 2500 ID=75A 10 2000 8 Ciss 1500 6 1000 4 500 2 Coss Crss 0 0 0 10 20 30 40 50 Qg(nC) 0 10 20 VDS(V) Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature VGS(th) AM05511v1 RDS(on) AM05512v1 (norm) (norm) 1.8 1.2 1.6 1.4 1.0 1.2 0.8 1.0 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 -50 -25 0 25 50 75 100125 150 TJ(°C) -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 12. Source-drain diode forward characteristics VSD AM00896v1 (V) TJ=-55°C 1.0 0.9 0.8 0.7 TJ=25°C TJ=150°C 0.6 0.5 0.4 0 10 20 30 40 50 60 70 ISD(A) Doc ID 15978 Rev 4 7/21

Test circuits STD/P/U75N3LLH6, STU75N3LLH6-S 3 Test circuits Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 8/21 Doc ID 15978 Rev 4

STD/P/U75N3LLH6, STU75N3LLH6-S Test circuits Figure 19. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Doc ID 15978 Rev 4 9/21

Package mechanical data STD/P/U75N3LLH6, STU75N3LLH6-S 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/21 Doc ID 15978 Rev 4

STD/P/U75N3LLH6, STU75N3LLH6-S Package mechanical data Table 8. Short IPAK mechanical dimensions mm Dim. Min Typ Max A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.25 e1 4.40 4.60 H 9.80 10.40 L 3.00 3.40 L1 0.80 1.20 L2 0.80 1.00 Figure 20. Short IPAK mechanical drawing (cid:24)(cid:18)(cid:23)(cid:25)(cid:23)(cid:24)(cid:17)(cid:0)(cid:63)(cid:33) Doc ID 15978 Rev 4 11/21

Package mechanical data STD/P/U75N3LLH6, STU75N3LLH6-S Table 9. DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0° 8° Figure 21. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimension are in millimeters 12/21 Doc ID 15978 Rev 4

STD/P/U75N3LLH6, STU75N3LLH6-S Package mechanical data Figure 22. DPAK (TO-252) drawing 0068772_H Doc ID 15978 Rev 4 13/21

Package mechanical data STD/P/U75N3LLH6, STU75N3LLH6-S Table 10. IPAK (TO-251) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10 o 14/21 Doc ID 15978 Rev 4

STD/P/U75N3LLH6, STU75N3LLH6-S Package mechanical data Figure 23. IPAK (TO-251) drawing 0068771_H AM09214V1 Doc ID 15978 Rev 4 15/21

Package mechanical data STD/P/U75N3LLH6, STU75N3LLH6-S Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 16/21 Doc ID 15978 Rev 4

STD/P/U75N3LLH6, STU75N3LLH6-S Package mechanical data Figure 24. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 15978 Rev 4 17/21

Packaging mechanical data STD/P/U75N3LLH6, STU75N3LLH6-S 5 Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18/21 Doc ID 15978 Rev 4

STD/P/U75N3LLH6, STU75N3LLH6-S Packaging mechanical data Figure 25. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 26. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot G measured at hub in core for tape start 25 mm min. width AM08851v2 Doc ID 15978 Rev 4 19/21

Revision history STD/P/U75N3LLH6, STU75N3LLH6-S 6 Revision history T able 13. Document revision history Date Revision Changes 01-Jul-2009 1 First issue. – Added device in Short IPAK. 02-Oct-2009 2 – Document status promoted from preliminary data to datasheet. – Added max values in Table5: Dynamic. – Added new package and mechanical data. 19-Apr-2011 3 – Inserted new I value @ 70 °C (see Table2: Absolute D maximum ratings) 04-Jul-2011 4 Updated: mechanical data 20/21 Doc ID 15978 Rev 4

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