STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB V @ R 3 Order code DS DS(on) I 12 TJmax max D IPAK 3 STF6N60M2 2 1 STP6N60M2 650 V 1.2 Ω 4.5 A TO-220FP TAB STU6N60M2 • Extremely low gate charge 3 • Excellent output capacitance (Coss) profile 2 1 • 100% avalanche tested TO-220 • Zener-protected Figure 1. Internal schematic diagram Applications , TAB • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking Package Packing STF6N60M2 TO-220FP STP6N60M2 6N60M2 TO-220 Tube STU6N60M2 IPAK October 2015 DocID024771 Rev 2 1/18 This is information on a product in full production. www.st.com

Contents STF6N60M2, STP6N60M2, STU6N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 IPAK(TO-251) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 DocID024771 Rev 2

STF6N60M2, STP6N60M2, STU6N60M2 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP TO-220, IPAK V Gate-source voltage ± 25 V GS I Drain current (continuous) at T = 25 °C 4.5 (1) 4.5 A D C I Drain current (continuous) at T = 100 °C 2.9(1) 2.9 A D C I (2) Drain current (pulsed) 18(1) 18 A DM P Total dissipation at T = 25 °C 20 60 W TOT C Insulation withstand voltage (RMS) from V all three leads to external heat sink 2500 V ISO (t=1 s; T =25 °C) C dv/dt(3) Peak diode recovery voltage slope 15 V/ns dv/dt(4) MOSFET dv/dt ruggedness 50 T Storage temperature stg - 55 to 150 °C T Operating junction temperature j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I ≤ 4.5 A, di/dt ≤ 400 A/µs; V < V , V =400 V SD DSpeak (BR)DSS DD 4. V ≤ 480 V DS Table 3. Thermal data Value Symbol Parameter Unit TO-220FP TO-220 IPAK R Thermal resistance junction-case max 6.25 2.08 °C/W thj-case R Thermal resistance junction-ambient max 62.5 100 °C/W thj-amb Table 4. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not I 1 A AR repetitive (pulse width limited by T ) jmax Single pulse avalanche energy (starting E 86 mJ AS T=25°C, I = I ; V =50) j D AR DD DocID024771 Rev 2 3/18 18

Electrical characteristics STF6N60M2, STP6N60M2, STU6N60M2 2 Electrical characteristics (T = 25 °C unless otherwise specified) C Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 1 mA, V = 0 600 V (BR)DSS breakdown voltage D GS Zero gate voltage VDS = 600 V 1 µA I DSS drain current (VGS = 0) VDS = 600 V, TC=125 °C 100 µA Gate-body leakage I V = ± 25 V ±10 µA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 2 3 4 V GS(th) DS GS D Static drain-source R V = 10 V, I = 2.25 A 1.06 1.2 Ω DS(on) on-resistance GS D Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C Input capacitance - 232 - pF iss Coss Output capacitance VDS = 100 V, f = 1 MHz, - 14 - pF V = 0 C Reverse transfer GS rss - 0.7 - pF capacitance Equivalent output C (1) V = 0 to 480 V, V = 0 - 71 - pF oss eq. capacitance DS GS Intrinsic gate R f = 1 MHz open drain - 6.5 - Ω G resistance Q Total gate charge - 8 - nC g V = 480 V, I = 4.5 A, DD D Q Gate-source charge V = 10 V - 1.7 - nC gs GS (see Figure18) Q Gate-drain charge - 4 - nC gd 1. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V DSS Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time - 9.5 - ns d(on) V = 300 V, I = 1.65 A, t Rise time DD D - 7.4 - ns r R = 4.7 Ω, V = 10 V G GS t Turn-off delay time - 24 - ns d(off) (see Figure17 and Figure22) t Fall time - 22.5 - ns f 4/18 DocID024771 Rev 2

STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I Source-drain current - 4.5 A SD I (1) Source-drain current (pulsed) - 18 A SDM V (2) Forward on voltage I = 4.5 A, V = 0 - 1.6 V SD SD GS t Reverse recovery time - 274 ns rr I = 4.5 A, di/dt = 100 A/µs Q Reverse recovery charge SD - 1.47 µC rr V = 60 V (see Figure19) DD I Reverse recovery current - 10.7 A RRM t Reverse recovery time - 376 ns rr I = 4.5 A, di/dt = 100 A/µs SD Q Reverse recovery charge V = 60 V, T = 150 °C - 1.96 µC rr DD j (see Figure19) I Reverse recovery current - 10.5 A RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024771 Rev 2 5/18 18

Electrical characteristics STF6N60M2, STP6N60M2, STU6N60M2 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP ID AM15886v1 (A) 10 1 Operatmiitoen id n bty hism aaxr eRa DiSs(on) 1100µ0sµs Li 1ms 0.1 10ms Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 ID AM15885v1 (A) 10 10µs 1 Operatmiitoen id n bty hism aaxr eRa DiSs(on) 110m0sµs Li 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for IPAK Figure 7. Thermal impedance for IPAK ID AM15875v1 (A) 10 10µs 1 Operatmiitoen id n bty hism aaxr eRa DiSs(on) 110m0sµs Li 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) 6/18 DocID024771 Rev 2

STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM15876v1 AM15877v1 ID ID (A) VGS= 8, 9, 10 V (A) 8 8 VDS= 20 V 7 VGS= 7 V 7 6 6 VGS= 6 V 5 5 4 4 3 3 VGS= 5 V 2 2 1 1 VGS= 4 V 0 0 0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance V(VGS) AM1V5D8S78v1 RD(SΩ(o)n) AM15879v1 VDD=480V (V) VGS=10V 12 VDS ID=4.5V 500 1.120 10 400 1.100 8 300 1.080 6 200 1.060 4 2 100 1.040 0 0 1.020 0 2 4 6 8 Qg(nC) 0 1 2 3 4 ID(A) Figure 12. Capacitance variations Figure 13. Normalized V vs temperature DS C AM15880v1 RDS(on) AM15883v1 (pF) (norm) VGS=10 V 1000 2.3 2.1 Ciss 1.9 100 1.7 1.5 10 Coss 1.3 1.1 1 Crss 0.9 0.7 0.1 0.5 0.1 1 10 100 VDS(V) -50 -25 0 25 50 75 100 TJ(°C) DocID024771 Rev 2 7/18 18

Electrical characteristics STF6N60M2, STP6N60M2, STU6N60M2 Figure 14. Normalized gate threshold voltage vs Figure 15. Normalized on-resistance vs temperature temperature VGS(th) AM15882v1 RDS(on) AM15883v1 (norm) (norm) VGS=10 V 2.3 1.1 ID=250 µA 2.1 1.9 1.0 1.7 1.5 0.9 1.3 1.1 0.8 0.9 0.7 0.7 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Source-drain diode forward characteristics VSD AM15884v1 (V) 1.4 1.2 TJ=-50°C 1 0.8 0.6 TJ=150°C TJ=25°C 0.4 0.2 0 0 1 2 3 4 ISD(A) 8/18 DocID024771 Rev 2

STF6N60M2, STP6N60M2, STU6N60M2 Test circuits 3 Test circuits Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2μ20F0 3μ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. μF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test circuit switching and diode recovery times L A A A D FAST L=100μH VD G D.U.T. DIODE 2200 3.3 μF μF VDD S B 3.3 1000 B B μF μF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform (cid:57)(cid:11)(cid:37)(cid:53)(cid:12)(cid:39)(cid:54)(cid:54) ton toff (cid:57)(cid:39) tdon tr tdoff tf 90% 90% (cid:44)(cid:39)(cid:48) 10% (cid:44)(cid:39) 0 10% VDS (cid:57)(cid:39)(cid:39) (cid:57)(cid:39)(cid:39) 90% VGS (cid:36)(cid:48)(cid:19)(cid:20)(cid:23)(cid:26)(cid:21)(cid:89)(cid:20) 0 10% AM01473v1 DocID024771 Rev 2 9/18 18

Package information STF6N60M2, STP6N60M2, STU6N60M2 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/18 DocID024771 Rev 2

STF6N60M2, STP6N60M2, STU6N60M2 Package information 4.1 TO-220FP package information Figure 23. TO-220FP package outline 7012510_Rev_K_B DocID024771 Rev 2 11/18 18

Package information STF6N60M2, STP6N60M2, STU6N60M2 Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 12/18 DocID024771 Rev 2

STF6N60M2, STP6N60M2, STU6N60M2 Package information 4.2 TO-220 package information Figure 24. TO-220 type A package outline (cid:19)(cid:19)(cid:20)(cid:24)(cid:28)(cid:27)(cid:27)(cid:66)(cid:87)(cid:92)(cid:83)(cid:72)(cid:36)(cid:66)(cid:53)(cid:72)(cid:89)(cid:66)(cid:55) DocID024771 Rev 2 13/18 18

Package information STF6N60M2, STP6N60M2, STU6N60M2 Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅ P 3.75 3.85 Q 2.65 2.95 14/18 DocID024771 Rev 2

STF6N60M2, STP6N60M2, STU6N60M2 Package information 4.3 IPAK(TO-251) package information Figure 25. IPAK (TO-251) type A package outline (cid:19)(cid:19)(cid:25)(cid:27)(cid:26)(cid:26)(cid:20)(cid:66)(cid:44)(cid:46)(cid:66)(cid:87)(cid:92)(cid:83)(cid:72)(cid:36)(cid:66)(cid:85)(cid:72)(cid:89)(cid:20)(cid:22) DocID024771 Rev 2 15/18 18

Package information STF6N60M2, STP6N60M2, STU6N60M2 Table 11. IPAK (TO-251) type A mechanical data mm. DIM min. typ. max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10° 16/18 DocID024771 Rev 2

STF6N60M2, STP6N60M2, STU6N60M2 Revision history 5 Revision history Table 12. Document revision history Date Revision Changes 11-Jun-2013 1 First release. Updated title, features and description. Updated Table 2.: Absolute maximum ratings and Table 8.: Source 01-Oct-2015 2 drain diode. Updated 4.3: IPAK(TO-251) package information. Minor text changes. DocID024771 Rev 2 17/18 18

STF6N60M2, STP6N60M2, STU6N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 18/18 DocID024771 Rev 2