STD2NK100Z, STP2NK100Z, STU2NK100Z Datasheet N-channel 1000 V, 6.25 Ω typ., 1.85 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB 3 123 Order code VDS RDS(on) max. ID Package 2 IPAK 1 DPAK STD2NK100Z DPAK TAB STP2NK100Z 1000 V 8.5 Ω 1.85 A TO-220 STU2NK100Z IPAK • Extremely high dv/dt capability 3 TO-220 12 • 100% avalanche tested • Gate charge minimized D(2, TAB) • Very low intrinsic capacitance • Zener-protected G(1) Applications • Switching applications S(3) Description AM01475V1 These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD2NK100Z STP2NK100Z STU2NK100Z DS5280 - Rev 3 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.

STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1000 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 1.85 A ID Drain current (continuous) at TC = 100 °C 1.16 A IDM (1) Drain current (pulsed) 7.4 A PTOT Total dissipation at TC = 25 °C 70 W ESD Gate-source human body model (C = 100 pF, R =1.5 kΩ) 3 kV dv/dt (2) Peak diode recovery voltage slope 2.5 V/ns Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 1.85 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS. Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK Rthj-case Thermal resistance junction-case 1.79 Rthj-pcb (1) Thermal resistance junction-pcb 50 - - °C/W Rthj-amb Thermal resistance junction-ambient 62.5 100 1. When mounted on FR-4 board of 1 inch², 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR (1) Avalanche current, repetitive or not-repetitive 1.85 A EAS (2). Single pulse avalanche energy 170 mJ 1. Pulse width limited by Tjmax. 2. Starting Tj = 25°C, ID = IAR, VDD = 50 V DS5280 - Rev 3 page 2/23

STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical characteristics 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS voltage VGS = 0 V, ID = 1 mA 1000 V VGS = 0 V, VDS = 1000 V 1 µA Zero gate voltage drain IDSS current VGS = 0 V, VDS = 1000 V, 50 µA TC = 125 °C (1) Gate-body leakage IGSS current VDS = 0 V, VGS = ±30 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V Static drain-source on RDS(on) resistance VGS = 10 V, ID = 0.9 A 6.25 8.5 Ω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance 499 Coss Output capacitance VDS = 25 V, f = 1 MHz, - 53 - pF Reverse transfer VGS = 0 V Crss capacitance 9 Equivalent output Coss eq. (1) capacitance VGS = 0 V, VDS = 0 V to 800 V - 28 - pF RG Gate input resistance f = 1 MHz, open drain - 6.6 - Ω Qg Total gate charge VDD = 800 V, ID = 1.85 A, 16 Qgs Gate-source charge VGS = 0 to 10 V - 3 - nC (see Figure 16. Test circuit for gate charge Qgd Gate-drain charge behavior) 9 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDSincreases from 0 to 80% VDSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 500 V, ID = 0.9 A, RG = 4.7 Ω, 7.2 tr Rise time VGS = 10 V 6.5 - - ns (see Figure 15. Test circuit for resistive load td(off) Turn-off delay time switching times and Figure 20. Switching 41.5 tr Fall time time waveform) 32.5 DS5280 - Rev 3 page 3/23

STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical characteristics Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 1.85 A Source-drain current ISDM (1) (pulsed) - 7.4 VSD (2) Forward on voltage ISD = 1.85 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 1.85 A, di/dt = 100 A/µs - 476 ns Qrr Reverse recovery charge VDD = 60 V - 1.6 μC (see Figure 17. Test circuit for inductive IRRM Reverse recovery current load switching and diode recovery times) - 6.9 A trr Reverse recovery time ISD = 1.85 A, di/dt = 100 A/µs - 532 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 1.9 μC (see Figure 17. Test circuit for inductive IRRM Reverse recovery current load switching and diode recovery times) - 88 A 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit Gate-source breakdown V(BR)GSO voltage IGS = ±1 mA, ID = 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS5280 - Rev 3 page 4/23

STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for IPAK, DPAK Figure 2. Thermal impedance for IPAK, DPAK GC20540_ZTH K δ=0.5 δ=0.2 0.1 10-1 0.05 0.02 0.01 Single pulse 10-2 10-5 10-4 10-3 10-2 10-1 tp(s) Figure 3. Safe operating area for TO-220 Figure 4. Thermal impedance for TO-220 Figure 5. Output characterisics Figure 6. Transfer characteristics DS5280 - Rev 3 page 5/23

STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical characteristics (curves) Figure 7. Normalized V(BR)DSS vs temperature Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs Figure 12. Normalized on resistance vs temperature temperature VDS=VGS DS5280 - Rev 3 page 6/23

STD2NK100Z, STP2NK100Z, STU2NK100Z Electrical characteristics (curves) Figure 13. Source-drain diode forward characteristics Figure 14. Maximum avalanche energy vs temperature AM00056v1 EAS(mJ) 190 180 ID=1.85A 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 TJ(°C) DS5280 - Rev 3 page 7/23

STD2NK100Z, STP2NK100Z, STU2NK100Z Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 47 kΩ 1 kΩ 100 nF RL 2200 3.3 + μF μF VDD VD VGS IG= CONST 100 Ω D.U.T. VGS RG D.U.T. pulse width 2200+ 2.7 kΩ VG pulse width μF 47 kΩ 1 kΩ AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load switching and Figure 18. Unclamped inductive load test circuit diode recovery times A A A L G DD.U.T. fdaiostde 100 µH VD 2200 3.3 25 Ω S B B B D µ3F.3 +1µ0F00 VDD ID +µF µF VDD G D.U.T. + RG S Vi D.U.T. _ pulse width AM01471v1 AM01470v1 Figure 20. Switching time waveform Figure 19. Unclamped inductive waveform ton toff V(BR)DSS td(on) tr td(off) tf VD 90% 90% IDM ID 0 10% VDS 10% VDD VDD VGS 90% 0 10% AM01472v1 AM01473v1 DS5280 - Rev 3 page 8/23

STD2NK100Z, STP2NK100Z, STU2NK100Z Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS5280 - Rev 3 page 9/23

STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 21. DPAK (TO-252) type A package outline 0068772_A_25 DS5280 - Rev 3 page 10/23

STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) type A package information Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 6.60 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 1.00 R 0.20 V2 0° 8° DS5280 - Rev 3 page 11/23

STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) type E package information 4.2 DPAK (TO-252) type E package information Figure 22. DPAK (TO-252) type E package outline 0068772_type-E_rev.25 DS5280 - Rev 3 page 12/23

STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) type E package information Table 10. DPAK (TO-252) type E mechanical data mm Dim. Min. Typ. Max. A 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 6.73 E1 4.32 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 2.74 L2 0.89 1.27 L4 1.02 Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS5280 - Rev 3 page 13/23

STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 24. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm Top cover P0 D P2 T tape E F K0 W B1 B0 For machine ref. only A0 P1 D1 including draft and radii concentric around B0 User direction of feed R Bending radius User direction of feed AM08852v1 DS5280 - Rev 3 page 14/23

STD2NK100Z, STP2NK100Z, STU2NK100Z DPAK (TO-252) packing information Figure 25. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A Tape slot G measured in core for at hub Full radius tape start 2.5mm min.width AM06038v1 Table 11. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DS5280 - Rev 3 page 15/23

STD2NK100Z, STP2NK100Z, STU2NK100Z TO-220 type A package information 4.4 TO-220 type A package information Figure 26. TO-220 type A package outline 0015988_typeA_Rev_21 DS5280 - Rev 3 page 16/23

STD2NK100Z, STP2NK100Z, STU2NK100Z TO-220 type A package information Table 12. TO-220 type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DS5280 - Rev 3 page 17/23

STD2NK100Z, STP2NK100Z, STU2NK100Z IPAK (TO-251) type A package information 4.5 IPAK (TO-251) type A package information Figure 27. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS5280 - Rev 3 page 18/23

STD2NK100Z, STP2NK100Z, STU2NK100Z IPAK (TO-251) type A package information Table 13. IPAK (TO-251) type A package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10° DS5280 - Rev 3 page 19/23

STD2NK100Z, STP2NK100Z, STU2NK100Z Ordering information 5 Ordering information Table 14. Order codes Order code Marking Package Packing STD2NK100Z DPAK Tape and reel STP2NK100Z 2NK100Z TO-220 Tube STU2NK100Z IPAK DS5280 - Rev 3 page 20/23

STD2NK100Z, STP2NK100Z, STU2NK100Z Revision history Table 15. Document revision history Date Version Changes 24-Oct-2007 1 First release – Inserted new package, mechanical data IPAK 18-Jun-2008 2 – Document status promoted from preliminary data to datasheet. Removed maturity status indication from cover page. The document status is production data. Updated title in cover page, Section 1 Electrical ratings, Section 2 Electrical characteristics 28-Jun-2018 3 and Section 4 Package information. Minor text changes. DS5280 - Rev 3 page 21/23

STD2NK100Z, STP2NK100Z, STU2NK100Z Contents Contents 1 Electrical ratings ..................................................................2 2 Electrical characteristics...........................................................3 2.1 Electrical characteristics (curves) .................................................5 3 Test circuits .......................................................................8 4 Package information...............................................................9 4.1 DPAK (TO-252) type A package information........................................9 4.2 DPAK (TO-252) type E package information.......................................11 4.3 DPAK (TO-252) packing information..............................................13 4.4 TO-220 type A package information..............................................15 4.5 IPAK (TO-251) type A package information........................................17 5 Ordering information .............................................................20 Revision history .......................................................................21 DS5280 - Rev 3 page 22/23

STD2NK100Z, STP2NK100Z, STU2NK100Z IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS5280 - Rev 3 page 23/23