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STTH4R06DEE-TR产品简介:
ICGOO电子元器件商城为您提供STTH4R06DEE-TR由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STTH4R06DEE-TR价格参考¥2.91-¥5.93。STMicroelectronicsSTTH4R06DEE-TR封装/规格:二极管 - 整流器 - 单, 标准 表面贴装 二极管 600V 4A PowerFlat™(3.3x3.3)。您可以下载STTH4R06DEE-TR参考资料、Datasheet数据手册功能说明书,资料中有STTH4R06DEE-TR 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE ULT FAST 600V 4A POWERFLAT二极管 - 通用,功率,开关 Turbo 2 Ultrafst REC 4A 600V 1.0V VF 30ns |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,二极管 - 通用,功率,开关,STMicroelectronics STTH4R06DEE-TR- |
数据手册 | |
产品型号 | STTH4R06DEE-TR |
不同If时的电压-正向(Vf) | 1.7V @ 4A |
不同 Vr、F时的电容 | - |
不同 Vr时的电流-反向漏电流 | 3µA @ 600V |
二极管类型 | 标准 |
产品 | General Purpose Diodes |
产品种类 | 二极管 - 通用,功率,开关 |
供应商器件封装 | PowerFlat™(3.3x3.3) |
其它名称 | 497-13333-1 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM64/CL830/SC12/SS1651/PF253931?referrer=70071840 |
包装 | 剪切带 (CT) |
反向恢复时间(trr) | 50ns |
商标 | STMicroelectronics |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | 8-PowerVDFN |
封装/箱体 | PowerFLAT 3.3 x 3.3 |
峰值反向电压 | 600 V |
工作温度-结 | 150°C (最大) |
工厂包装数量 | 3000 |
恢复时间 | 100 ns |
最大反向漏泄电流 | 30 uA |
最大浪涌电流 | 60 A |
标准包装 | 1 |
正向连续电流 | 4 A |
热阻 | 4.5°C/W Jc |
电压-DC反向(Vr)(最大值) | 600V |
电流-平均整流(Io) | 4A |
系列 | STTH4R06DEE |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
STTH4R06DEE Turbo 2 ultrafast recovery diode Datasheet production data Features NC ■ Very low switching losses A ■ High frequency and high pulse current K operation A A ■ Low thermal resistance A NC ■ High junction temperature A A A A ■ ECOPACK®2 compliant component NC A Description K K The STTH4R06 series uses ST’s new 600 V planar Pt doping technology. The STTH4R06 is specially suited for switching mode base drive and PowerFLAT(3.3 x 3.3) transistor circuits. STTH4R06DEE-TR Packaged in PowerFLAT™, this device is intended for use in low profile applications. T able 1. Device summary Symbol Value I 4 A F(AV) V 600 V RRM T (max) 150 °C j V (typ) 1.0 V F T (typ) 30 ns RR TM: PowerFLAT is a trademark of STMicroelectronics September 2012 Doc ID 023262 Rev 1 1/8 This is information on a product in full production. www.st.com 8
Characteristics STTH4R06DEE 1 Characteristics T able 2. Absolute ratings (limiting values T = 25 °C unless otherwise specified) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 15 A F(RMS) I Average forward current Tc = 120 °C, = 0.5 4 A F(AV) I Surge non repetitive forward current tp = 10 ms sinusoidal 60 A FSM T Storage temperature range -65 to +150 °C stg Tj Maximum operating junction temperature 150 °C T able 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 4.5 °C/W th(j-c) Junction to ambient on printed circuit board (with recommended R 250 °C/W th(j-a) footprint, copper thickness = 35 µm) T able 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I (1) Reverse leakage Tj = 25 °C V = V - 3 µA R current T = 125 °C R RRM - 3 30 µA j T = 25 °C I = 4A 1.30 1.70 V (2) Forward voltage drop j F V F T = 150 °C - 1.0 1.25 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 µs, < 2% p To evaluate the conduction losses use the following equation: P = 1 x I + 0.062 x I 2 F(AV) F (RMS) T able 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Reverse recovery IRM current T = 125 °C IF = 4 A, VR = 400 V, 5.5 7.5 A j dl /dt = -200 A/µs S Softness factor F 2 factor I = 1A, V = 30 V, F R 35 50 dl /dt = -50 A/µs F t Reverse recovery time T = 25 °C ns rr j I = 1A, V = 30 V, F R 30 40 dl /dt = -100 A/µs F t Forward recovery time T = 25 °C 100 ns fr j I = 4 A, V = 2 V F FR Forward recovery VFP voltage Tj = 25 °C dlF/dt = 100 A/µs 3.5 5 V 2/8 Doc ID 023262 Rev 1
STTH4R06DEE Characteristics Figure 1. A verage forward power dissipation Figure 2. Forward voltage drop versus versus average forward current forward current PF(AV)(W) IFM(A) 8 100.0 7 δ= 0.05 δ= 0.1 δ= 0.2 δ= 0.5 δ= 1 Tj=150°C 6 (Typical values) 10.0 5 Tj=150°C (Maximum values) Tj=25°C 4 (Maximum values) 3 T 1.0 2 1 IF(AV)(A) δ=tp/T tp VFM(V) 0 0.1 0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 3. R elative variation of thermal Figure 4. Peak reverse recovery current impedance junction to case versus versus dl /dt (typical values) F pulse duration Zth(j-c)/Rth(j-c) IRM(A) 1.0 12 IF=IF(AV) 0.9 VR=400V 10 Tj=125°C 0.8 0.7 8 0.6 0.5 6 0.4 4 0.3 Single pulse 0.2 2 0.1 tp(s) dIF/dt(A/µs) 0.0 0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500 Figure 5. R everse recovery time versus dl /dt Figure 6. Reverse recovery charges versus F (typical values) dl /dt (typical values) F tRR(ns) QRR(nC) 240 320 200 TVIjR=F==14I2F05(A0V°)VC 280 VTIjR=F==14I2F05(A0V°V)C 240 160 200 120 160 120 80 80 40 40 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Doc ID 023262 Rev 1 3/8
Characteristics STTH4R06DEE Figure 7. R everse recovery softness factor Figure 8. Relative variation of dynamic versus dl /dt (typical values) parameters versus junction F temperature SFACTOR 1.20 4.0 3.5 VIRF==4IF0(A0VV) 1.00 Tj=125°C IRM 3.0 0.80 2.5 SFACTOR 0.60 2.0 QRR 1.5 0.40 1.0 0.5 dIF/dt(A/µs) 0.20 Tj(°C) RefereVnIRFc==e4I:F0T(A0jV=)V125°C 0.0 0.00 0 50 100 150 200 250 300 350 400 450 500 25 50 75 100 125 Figure 9. T ransient peak forward voltage Figure 10. Forward recovery time versus dl /dt F versus dl /dt (typical values) (typical values) F VFP(V) tfr(ns) 12 110 10 TIj=F=1I2F5(AV°)C 10900 TIVj=FF=1RI2=F5(2AVV°)C 80 8 70 60 6 50 40 4 30 2 20 dIF/dt(A/µs) 10 dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Figure 11. J unction capacitance versus Figure 12. Thermal resistance junction to reverse voltage applied (typical ambient versus copper surface values) under tab C(pF) Rth(j-a)(°C/W) 100 250 F=1 MHz epoxy printed board FR4, copper thickness=35µm PowerFLAT (3.3x3.3) VOSC=30 mVRMS Tj=25°C 200 150 10 100 50 VR(V) SCu(cm²) 1 0 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 10 4/8 Doc ID 023262 Rev 1
STTH4R06DEE Package information 2 Package information ● Epoxy meets UL94,V0 ● Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 13. PowerFLAT (3.3 x 3.3) dimensions (definitions) Exposed pad L E L1 E2 A3 E/2 b nc nc D/2 e/2 D2 D e a k k a A Index area (D/2 x E/2) 0.10 mm Ref. 0.10 mm Ref. Projection 0.20 mm Ref. T able 6. PowerFLAT (3.3 x 3.3) dimensions (values) Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 0.95 1.0 0.037 0.039 A3 0.2 0.008 b 0.29 0.34 0.39 0.011 0.013 0.015 D 3.20 3.30 3.40 0.126 0.130 0.134 D2 2.24 2.29 2.34 0.088 0.090 0.092 E 3.20 3.30 3.40 0.126 0.130 0.134 E2 1.66 1.71 1.76 0.065 0.067 0.069 e 0.65 0.026 L 0.40 0.016 L1 0.45 0.50 0.55 0.018 0.20 0.22 Doc ID 023262 Rev 1 5/8
Package information STTH4R06DEE Figure 14. Footprint (dimensions in mm) 2.39 1.195 2.21 3.4 0.59 0.6 0.65 0.325 0.44 6/8 Doc ID 023262 Rev 1
STTH4R06DEE Ordering information 3 Ordering information T able 7. Ordering information Order code Marking Package Weight Base qty Delivery mode PowerFLAT Tape and reel STTH4R06DEE-TR TH4R06 34 mg 3000 (3.3 x 3.3) 13” reel 4 Revision history T able 8. Document revision history Date Revision Changes 11-Sep-2012 1 First issue. Doc ID 023262 Rev 1 7/8
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