STTH312 Ultrafast recovery - 1200 V diode Main product characteristics A K I 3 A F(AV) V 1200 V RRM T 175° C j VF (typ) 1.15 V K t (typ) 55 ns rr A Features and benefits NC ■ Ultrafast, soft recovery DPAK ■ Very low conduction and switching losses STTH312B ■ High frequency and/or high pulsed current operation ■ High reverse voltage capability ■ High junction temperature Description The high quality design of this diode has Order codes produced a device with low leakage current, regularly reproducible characteristics and intrinsic Part Number Marking ruggedness. These characteristics make it ideal for heavy duty applications that demand long term STTH312B STTH312B reliability. STTH312B-TR STTH312B Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/8 www.st.com 8

Characteristics STTH312 1 Characteristics Table 1. A bsolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM I RMS forward current 6 A F(RMS) I Average forward current, δ = 0.5 T = 150° C 3 A F(AV) c I Repetitive peak forward current t = 5 µs, F = 5 kHz square 35 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 35 A FSM p T Storage temperature range -65 to + 175 °C stg T Maximum operating junction temperature 175 °C j Table 2. T hermal parameter Symbol Parameter Value Unit R Junction to case 3.8 °C/W th(j-c) Table 3. S tatic electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25° C 10 I (1) Reverse leakage current j V = V µA R R RRM T = 125° C 2 100 j T = 25° C 2 j V (2) Forward voltage drop T = 125° C I = 3 A 1.20 1.7 V F j F T = 150° C 1.15 1.65 j 1. Pulse test: t = 5 ms, δ < 2 % p 2. Pulse test: t = 380 µs, δ < 2 % p To evaluate the conduction losses use the following equation: P = 1.4 x I + 0.1 I 2 F(AV) F (RMS) 2/8

STTH312 Characteristics Table 4. D ynamic characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I = 1 A, dI /dt = -50 A/µs, F F 115 V = 30 V, T = 25° C R j t Reverse recovery time ns rr I = 1 A, dI /dt = -100 A/µs, F F 55 80 V = 30 V, T = 25° C R j I = 3 A, dI /dt = -200 A/µs, I Reverse recovery current F F 9.5 14 A RM V = 600 V, T = 125° C R j I = 3 A, dI /dt = -200 A/µs, S Softness factor F F 2 V = 600 V, T = 125° C R j I = 3 A dI /dt = 50 A/µs t Forward recovery time F F 350 ns fr V = 1.5 x V , T = 25° C FR Fmax j I = 3 A, dI /dt = 50 A/µs, F F V Forward recovery voltage 12 V FP T = 25° C j Figure 1. C onduction losses versus Figure 2. Forward voltage drop versus average current forward current P(W) IFM(A) 7 50 δ= 0.1 δ= 0.2 δ= 0.5 45 6 40 Tj=150°C 5 δ= 0.05 35 (maximum values) δ= 1 4 30 (typTijc=a1l5 v0a°lCues) 25 Tj=25°C (maximum values) 3 20 2 15 T 10 1 IF(AV)(A) δ=tp/T tp 5 VFM(V) 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 3. R elative variation of thermal Figure 4. Peak reverse recovery current impedance junction to case versus dI /dt (typical values) F versus pulse duration Zth(j-c)/Rth(j-c) IRM(A) 1.0 24 0.9 2202 VTjR==162050°CV IF=2 x IF(AV) 0.8 18 0.7 16 0.6 14 IF=IF(AV) 0.5 12 IF=0.5 x IF(AV) 0.4 10 8 0.3 Single pulse 6 0.2 4 0.1 tp(s) 2 dIF/dt(A/µs) 0.0 0 1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500 3/8

Characteristics STTH312 Figure 5. R everse recovery time versus Figure 6. Reverse recovery charges versus dI /dt (typical values) dI /dt (typical values) F F trr(ns) Qrr(nC) 400 1200 350 VTjR==162050°CV VTjR==162050°CV IF=2 x IF(AV) 1000 300 IF=2 x IF(AV) 800 250 IF=IF(AV) IF=IF(AV) 200 IF=0.5 x IF(AV) 600 IF=0.5 x IF(AV) 150 400 100 200 50 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Figure 7. S oftness factor versus Figure 8. Relative variations of dynamic dI /dt (typical values) parameters versus junction F temperature S factor 3.5 2.50 3.0 ITVFjR=≤=1262x05I0°FCV(AV) 22..0205 RefereVInFRc==eI6F:0(TA0Vj=V)125°C 1.75 Sfactor 2.5 1.50 1.25 2.0 1.00 1.5 0.75 IRM trr 0.50 1.0 0.25 QRR Tj(°C) dIF/dt(A/µs) 0.00 0.5 25 50 75 100 125 0 50 100 150 200 250 300 350 400 450 500 Figure 9. T ransient peak forward voltage Figure 10. Forward recovery time versus dI /dt F versus dI /dt (typical values) (typical values) F VFP(V) tfr(ns) 60 700 5505 ITFj==I1F2(A5V°)C 600 VFR=T1IFj.=5=1 Ix2F(5VA°VFC)max. 45 500 40 35 400 30 25 300 20 200 15 10 100 5 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 25 50 75 100 125 150 175 200 225 250 275 300 0 100 200 300 400 500 4/8

STTH312 Characteristics Figure 11. Junction capacitance versus Figure 12. Thermal resistance junction to reverse voltage applied (typical ambient versus copper surface values) under tab (printed circuit board FR4, e = 35 µm) cu C(pF) Rth(j-a)(°C/W) 100 100 F=1MHz 90 VOSC=30mVRMS Tj=25°C 80 70 60 10 50 40 30 20 VR(V) 10 SCU(cm²) 1 0 1 10 100 1000 0 5 10 15 20 25 30 35 40 5/8

Package mechanical data STTH312 2 Package mechanical data Epoxy meets UL94, V0 Cooling method: by conduction (C) T able 5. DPAK dimensions DIMENSIONS REF. Millimeters Inches Min. Max Min. Max. E A A 2.20 2.40 0.086 0.094 B2 C2 A1 0.90 1.10 0.035 0.043 L2 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 D B2 5.20 5.40 0.204 0.212 H R C 0.45 0.60 0.017 0.023 L4 C2 0.48 0.60 0.018 0.023 A1 B R D 6.00 6.20 0.236 0.244 G C E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 A2 0.60 MIN. H 9.35 10.10 0.368 0.397 L2 0.80 typ. 0.031 typ. V2 L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° Figure 13. DPAK footprint (dimensions in mm) 6.7 3 3 1.6 2.3 6.7 2.3 1.6 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8

STTH312 Ordering information 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH312B STTH312B DPAK 0.30 g 75 Tube STTH312B-TR STTH312B DPAK 0.30 g 2500 Tape & reel 4 Revision history Date Revision Description of Changes 02-Mar-2006 1 First issue. 7/8

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