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  • 型号: STTH3010W
  • 制造商: STMicroelectronics
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STTH3010W产品简介:

ICGOO电子元器件商城为您提供STTH3010W由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STTH3010W价格参考¥23.69-¥23.69。STMicroelectronicsSTTH3010W封装/规格:二极管 - 整流器 - 单, 标准 通孔 二极管 1000V 30A DO-247。您可以下载STTH3010W参考资料、Datasheet数据手册功能说明书,资料中有STTH3010W 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE ULT FAST 1KV 30A DO247整流器 Ultrafast recovery high voltage diode

产品分类

单二极管/整流器分离式半导体

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,整流器,STMicroelectronics STTH3010W-

数据手册

点击此处下载产品Datasheet

产品型号

STTH3010W

不同If时的电压-正向(Vf)

2V @ 30A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

15µA @ 1000V

二极管类型

标准

产品

Ultra Fast Recovery Rectifiers

产品目录页面

点击此处下载产品Datasheet

产品种类

整流器

供应商器件封装

DO247

其它名称

497-5154-5

其它有关文件

http://www.st.com/web/catalog/sense_power/FM64/CL830/SC8/PF130141?referrer=70071840

包装

管件

反向恢复时间(trr)

100ns

反向电压

1000 V

反向电流IR

15 uA

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

DO-247-2(直引线)

封装/箱体

DO-247

工作温度-结

175°C (最大)

工厂包装数量

600

恢复时间

100 ns

最大工作温度

+ 175 C

最大浪涌电流

180 A

最小工作温度

- 65 C

标准包装

30

正向电压下降

2 V

正向连续电流

30 A

热阻

1.1°C/W Jc

电压-DC反向(Vr)(最大值)

1000V(1kV)

电流-平均整流(Io)

30A

系列

STTH3010

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Single

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PDF Datasheet 数据手册内容提取

STTH3010 Ultrafast recovery - high voltage diode Main product characteristics IF(AV) 30 A A K V 1000 V RRM T 175° C j V (typ) 1.30 V F A t (typ) 42 ns rr K TO-220AC Features and benefits STTH3010D ■ Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current A A operation K K ■ High reverse voltage capability DO-247 DOP3I ■ High junction temperature STTH3010W STTH3010PI ■ Insulated package: – DOP3I Electrical insulation = 2500 V RMS Capacitance = 12 pF Order codes Description Part Number Marking STTH3010D STTH3010D The high quality design of this diode has produced a device with low leakage current, STTH3010W STTH3010W regularly reproducible characteristics and intrinsic STTH3010PI STTH3010PI ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/10 www.st.com 10

Characteristics STTH3010 1 Characteristics Table 1. A bsolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I RMS forward current 50 A F(RMS) TO-220 / DO-247 T = 105° C I Average forward current, δ = 0.5 c 30 A F(AV) DOP3I T = 65° C c I Repetitive peak forward current t = 5 µs, F = 5 kHz square 300 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 180 A FSM p T Storage temperature range -65 to + 175 °C stg T Maximum operating junction temperature 175 °C j Table 2. T hermal parameters Symbol Parameter Value Unit TO-220 / DO-247 1.1 R Junction to case °C/W th(j-c) DOP3I 1.8 Table 3. S tatic electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25° C 15 I (1) Reverse leakage current j V = V µA R R RRM T = 125° C 10 100 j T = 25° C 2 j V (2) Forward voltage drop T = 100° C I = 30 A 1.4 1.8 V F j F T = 150° C 1.3 1.7 j 1. Pulse test: t = 5 ms, δ < 2 % p 2. Pulse test: t = 380 µs, δ < 2 % p To evaluate the conduction losses use the following equation: P = 1.3 x I + 0.013 I 2 F(AV) F (RMS) 2/10

STTH3010 Characteristics Table 4. D ynamic characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I = 1 A, dI /dt = -50 A/µs, F F 100 V = 30 V, T = 25° C R j I = 1 A, dI /dt = -100 A/µs, t Reverse recovery time F F 53 70 ns rr V = 30 V, T = 25° C R j I = 1 A, dI /dt = -200 A/µs, F F 42 55 V = 30 V, T = 25° C R j I = 30 A, dI /dt = -200 A/µs, I Reverse recovery current F F 24 32 A RM V = 600 V, T = 125° C R j I = 30 A, dI /dt = -200 A/µs, S Softness factor F F 1 V = 600 V, T = 125° C R j I = 30 A dI /dt = 100 A/µs t Forward recovery time F F 450 ns fr V = 1.5 x V , T = 25° C FR Fmax j I = 30 A, dI /dt = 100 A/µs, F F V Forward recovery voltage 5 V FP T = 25° C j Figure 1. C onduction losses versus Figure 2. Forward voltage drop versus average current forward current P(W) IFM(A) 70 200 65 =0.2 =0.5 =1 180 60 5505 =0.05 =0.1 114600 (MaxTimj=u1m50 v°aClues) 45 40 120 35 100 Tj=150°C 30 (Typicalvalues) 80 25 1250 T 4600 (MaxiTmj=u2m5 °vCalues) 10 5 IF(AV)(A) 20 VFM(V) 0 0 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 3. R elative variation of thermal Figure 4. Peak reverse recovery current impedance junction to case versus dI /dt (typical values) F versus pulse duration Zth(j-c)/Rth(j-c) IRM(A) 1.0 60 0.9 Single pulse VR=600V 0.8 50 Tj=125°C IF= 2 x IF(AV) 0.7 40 IF= IF(AV) 0.6 0.5 30 IF=0.5 x IF(AV) 0.4 0.3 20 0.2 10 0.1 tp(s) dIF/dt(A/µs) 0.0 0 1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500 3/10

Characteristics STTH3010 Figure 5. R everse recovery time versus Figure 6. Reverse recovery charges versus dI /dt (typical values) dI /dt (typical values) F F trr(ns) Qrr(µC) 700 7 600 TVjR==162050°CV 6 TVjR==162050°CV IF= 2 xIF(AV) 500 IF= 2 x IF(AV) 5 IF= IF(AV) 400 4 IF=IF(AV) 300 3 IF=0.5 xIF(AV) 200 2 100 dIF/dt(A/µs) IF=0.5 x IF(AV) 1 dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Figure 7. S oftness factor versus Figure 8. Relative variations of dynamic dI /dt (typical values) parameters versus junction F temperature S factor 1.50 2.0 IFTV=jR=2=1 62x0 5I0F°(CVAV) 11..68 Sfactor RefereVInFRc==e 6I:F0T(A0jV=V)125°C 1.25 1.4 1.2 1.00 1.0 0.8 tRR 0.6 0.75 0.4 IRM dIF/dt(A/µs) 00..02 QRR Tj(°C) 0.50 25 50 75 100 125 0 50 100 150 200 250 300 350 400 450 500 4/10

STTH3010 Characteristics Figure 9. T ransient peak forward voltage Figure 10. Forward recovery time versus versus dI /dt (typical values) dI /dt (typical values) F F VFP(V) tfr(ns) 25 800 20 TIFj==1 2IF5(A°VC) 700 VFR=T I1Fj=.=51 2IxF5(VA°VCF)max. 600 15 500 10 400 5 300 dIF/dt(A/µs) dIF/dt(A/µs) 0 200 0 100 200 300 400 500 0 100 200 300 400 500 F igure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 5/10

Package information STTH3010 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm (TO-220AC) Recommended torque value: 0.80 Nm (SOD93, DOP31, and DO-247) Maximum torque value: 0.7 Nm (TO-220AC) Maximum torque value: 1.0 Nm (SOD93, DOP31, and DO-247) T able 5. DO-247 dimensions DIMENSIONS REF. Millimeters Inches Min. Max Min. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 V E 0.40 0.80 0.015 0.031 V Dia F 1.00 1.40 0.039 0.055 F2 2.00 0.078 A H F3 2.00 2.40 0.078 0.094 G 10.90 0.429 L5 H 15.45 15.75 0.608 0.620 L L 19.85 20.15 0.781 0.793 L2 L4 L1 3.70 4.30 0.145 0.169 F2 L1 L3 V2 F3 D L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 F M E L4 34.60 1.362 G L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 6/10

STTH3010 Package information T able 6. T0-220AC dimensions DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 H2 A C 1.23 1.32 0.048 0.051 Ø I C D 2.40 2.72 0.094 0.107 L5 L7 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 L6 F1 1.14 1.70 0.044 0.066 L2 G 4.95 5.15 0.194 0.202 F1 L9 D H2 10.00 10.40 0.393 0.409 L4 L2 16.40 typ. 0.645 typ. F L4 13.00 14.00 0.511 0.551 M E L5 2.65 2.95 0.104 0.116 G L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. Diam. I 3.75 3.85 0.147 0.151 7/10

Package information STTH3010 T able 7. DOP3I dimensions DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. E A E1 A 4.40 4.60 0.173 0.181 R c ØP b 1.20 1.40 0.047 0.055 c 1.45 1.55 0.057 0.061 c1 0.50 0.70 0.020 0.028 G Y D D 12.15 13.10 0.474 0.516 E 15.10 15.50 0.594 0.610 E1 7.55 7.75 0.297 0.305 L e 10.80 11.30 0.425 0.445 G 20.4 21.10 0.815 0.831 L 14.35 15.60 0.565 0.614 b c1 Q P 4.08 4.17 0.161 0.164 e Q 2.70 2.90 0.106 0.114 R 4.60 typ. 0.181 typ. Y 15.80 16.50 0.622 0.650 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 8/10

STTH3010 Ordering information 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH3010D STTH3010D TO-220AC 1.86 g 50 Tube STTH3010PI STTH3010PI DOP3I 4.46 g 30 Tube STTH3010W STTH3010W DO-247 4.4 g 30 Tube 4 Revision history Date Revision Description of Changes 02-Mar-2006 1 First issue. 9/10

STTH3010 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10

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