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STTH3010W产品简介:
ICGOO电子元器件商城为您提供STTH3010W由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STTH3010W价格参考¥23.69-¥23.69。STMicroelectronicsSTTH3010W封装/规格:二极管 - 整流器 - 单, 标准 通孔 二极管 1000V 30A DO-247。您可以下载STTH3010W参考资料、Datasheet数据手册功能说明书,资料中有STTH3010W 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE ULT FAST 1KV 30A DO247整流器 Ultrafast recovery high voltage diode |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,整流器,STMicroelectronics STTH3010W- |
数据手册 | |
产品型号 | STTH3010W |
不同If时的电压-正向(Vf) | 2V @ 30A |
不同 Vr、F时的电容 | - |
不同 Vr时的电流-反向漏电流 | 15µA @ 1000V |
二极管类型 | 标准 |
产品 | Ultra Fast Recovery Rectifiers |
产品目录页面 | |
产品种类 | 整流器 |
供应商器件封装 | DO247 |
其它名称 | 497-5154-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM64/CL830/SC8/PF130141?referrer=70071840 |
包装 | 管件 |
反向恢复时间(trr) | 100ns |
反向电压 | 1000 V |
反向电流IR | 15 uA |
商标 | STMicroelectronics |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | DO-247-2(直引线) |
封装/箱体 | DO-247 |
工作温度-结 | 175°C (最大) |
工厂包装数量 | 600 |
恢复时间 | 100 ns |
最大工作温度 | + 175 C |
最大浪涌电流 | 180 A |
最小工作温度 | - 65 C |
标准包装 | 30 |
正向电压下降 | 2 V |
正向连续电流 | 30 A |
热阻 | 1.1°C/W Jc |
电压-DC反向(Vr)(最大值) | 1000V(1kV) |
电流-平均整流(Io) | 30A |
系列 | STTH3010 |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Single |
STTH3010 Ultrafast recovery - high voltage diode Main product characteristics IF(AV) 30 A A K V 1000 V RRM T 175° C j V (typ) 1.30 V F A t (typ) 42 ns rr K TO-220AC Features and benefits STTH3010D ■ Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current A A operation K K ■ High reverse voltage capability DO-247 DOP3I ■ High junction temperature STTH3010W STTH3010PI ■ Insulated package: – DOP3I Electrical insulation = 2500 V RMS Capacitance = 12 pF Order codes Description Part Number Marking STTH3010D STTH3010D The high quality design of this diode has produced a device with low leakage current, STTH3010W STTH3010W regularly reproducible characteristics and intrinsic STTH3010PI STTH3010PI ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/10 www.st.com 10
Characteristics STTH3010 1 Characteristics Table 1. A bsolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I RMS forward current 50 A F(RMS) TO-220 / DO-247 T = 105° C I Average forward current, δ = 0.5 c 30 A F(AV) DOP3I T = 65° C c I Repetitive peak forward current t = 5 µs, F = 5 kHz square 300 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 180 A FSM p T Storage temperature range -65 to + 175 °C stg T Maximum operating junction temperature 175 °C j Table 2. T hermal parameters Symbol Parameter Value Unit TO-220 / DO-247 1.1 R Junction to case °C/W th(j-c) DOP3I 1.8 Table 3. S tatic electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25° C 15 I (1) Reverse leakage current j V = V µA R R RRM T = 125° C 10 100 j T = 25° C 2 j V (2) Forward voltage drop T = 100° C I = 30 A 1.4 1.8 V F j F T = 150° C 1.3 1.7 j 1. Pulse test: t = 5 ms, δ < 2 % p 2. Pulse test: t = 380 µs, δ < 2 % p To evaluate the conduction losses use the following equation: P = 1.3 x I + 0.013 I 2 F(AV) F (RMS) 2/10
STTH3010 Characteristics Table 4. D ynamic characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I = 1 A, dI /dt = -50 A/µs, F F 100 V = 30 V, T = 25° C R j I = 1 A, dI /dt = -100 A/µs, t Reverse recovery time F F 53 70 ns rr V = 30 V, T = 25° C R j I = 1 A, dI /dt = -200 A/µs, F F 42 55 V = 30 V, T = 25° C R j I = 30 A, dI /dt = -200 A/µs, I Reverse recovery current F F 24 32 A RM V = 600 V, T = 125° C R j I = 30 A, dI /dt = -200 A/µs, S Softness factor F F 1 V = 600 V, T = 125° C R j I = 30 A dI /dt = 100 A/µs t Forward recovery time F F 450 ns fr V = 1.5 x V , T = 25° C FR Fmax j I = 30 A, dI /dt = 100 A/µs, F F V Forward recovery voltage 5 V FP T = 25° C j Figure 1. C onduction losses versus Figure 2. Forward voltage drop versus average current forward current P(W) IFM(A) 70 200 65 =0.2 =0.5 =1 180 60 5505 =0.05 =0.1 114600 (MaxTimj=u1m50 v°aClues) 45 40 120 35 100 Tj=150°C 30 (Typicalvalues) 80 25 1250 T 4600 (MaxiTmj=u2m5 °vCalues) 10 5 IF(AV)(A) 20 VFM(V) 0 0 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 3. R elative variation of thermal Figure 4. Peak reverse recovery current impedance junction to case versus dI /dt (typical values) F versus pulse duration Zth(j-c)/Rth(j-c) IRM(A) 1.0 60 0.9 Single pulse VR=600V 0.8 50 Tj=125°C IF= 2 x IF(AV) 0.7 40 IF= IF(AV) 0.6 0.5 30 IF=0.5 x IF(AV) 0.4 0.3 20 0.2 10 0.1 tp(s) dIF/dt(A/µs) 0.0 0 1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500 3/10
Characteristics STTH3010 Figure 5. R everse recovery time versus Figure 6. Reverse recovery charges versus dI /dt (typical values) dI /dt (typical values) F F trr(ns) Qrr(µC) 700 7 600 TVjR==162050°CV 6 TVjR==162050°CV IF= 2 xIF(AV) 500 IF= 2 x IF(AV) 5 IF= IF(AV) 400 4 IF=IF(AV) 300 3 IF=0.5 xIF(AV) 200 2 100 dIF/dt(A/µs) IF=0.5 x IF(AV) 1 dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Figure 7. S oftness factor versus Figure 8. Relative variations of dynamic dI /dt (typical values) parameters versus junction F temperature S factor 1.50 2.0 IFTV=jR=2=1 62x0 5I0F°(CVAV) 11..68 Sfactor RefereVInFRc==e 6I:F0T(A0jV=V)125°C 1.25 1.4 1.2 1.00 1.0 0.8 tRR 0.6 0.75 0.4 IRM dIF/dt(A/µs) 00..02 QRR Tj(°C) 0.50 25 50 75 100 125 0 50 100 150 200 250 300 350 400 450 500 4/10
STTH3010 Characteristics Figure 9. T ransient peak forward voltage Figure 10. Forward recovery time versus versus dI /dt (typical values) dI /dt (typical values) F F VFP(V) tfr(ns) 25 800 20 TIFj==1 2IF5(A°VC) 700 VFR=T I1Fj=.=51 2IxF5(VA°VCF)max. 600 15 500 10 400 5 300 dIF/dt(A/µs) dIF/dt(A/µs) 0 200 0 100 200 300 400 500 0 100 200 300 400 500 F igure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 5/10
Package information STTH3010 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm (TO-220AC) Recommended torque value: 0.80 Nm (SOD93, DOP31, and DO-247) Maximum torque value: 0.7 Nm (TO-220AC) Maximum torque value: 1.0 Nm (SOD93, DOP31, and DO-247) T able 5. DO-247 dimensions DIMENSIONS REF. Millimeters Inches Min. Max Min. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 V E 0.40 0.80 0.015 0.031 V Dia F 1.00 1.40 0.039 0.055 F2 2.00 0.078 A H F3 2.00 2.40 0.078 0.094 G 10.90 0.429 L5 H 15.45 15.75 0.608 0.620 L L 19.85 20.15 0.781 0.793 L2 L4 L1 3.70 4.30 0.145 0.169 F2 L1 L3 V2 F3 D L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 F M E L4 34.60 1.362 G L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 6/10
STTH3010 Package information T able 6. T0-220AC dimensions DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 H2 A C 1.23 1.32 0.048 0.051 Ø I C D 2.40 2.72 0.094 0.107 L5 L7 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 L6 F1 1.14 1.70 0.044 0.066 L2 G 4.95 5.15 0.194 0.202 F1 L9 D H2 10.00 10.40 0.393 0.409 L4 L2 16.40 typ. 0.645 typ. F L4 13.00 14.00 0.511 0.551 M E L5 2.65 2.95 0.104 0.116 G L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. Diam. I 3.75 3.85 0.147 0.151 7/10
Package information STTH3010 T able 7. DOP3I dimensions DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. E A E1 A 4.40 4.60 0.173 0.181 R c ØP b 1.20 1.40 0.047 0.055 c 1.45 1.55 0.057 0.061 c1 0.50 0.70 0.020 0.028 G Y D D 12.15 13.10 0.474 0.516 E 15.10 15.50 0.594 0.610 E1 7.55 7.75 0.297 0.305 L e 10.80 11.30 0.425 0.445 G 20.4 21.10 0.815 0.831 L 14.35 15.60 0.565 0.614 b c1 Q P 4.08 4.17 0.161 0.164 e Q 2.70 2.90 0.106 0.114 R 4.60 typ. 0.181 typ. Y 15.80 16.50 0.622 0.650 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 8/10
STTH3010 Ordering information 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH3010D STTH3010D TO-220AC 1.86 g 50 Tube STTH3010PI STTH3010PI DOP3I 4.46 g 30 Tube STTH3010W STTH3010W DO-247 4.4 g 30 Tube 4 Revision history Date Revision Description of Changes 02-Mar-2006 1 First issue. 9/10
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