STTH20002TV ® TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) Up to 2 x 120 A A1 K1 V 200 V A2 K2 RRM T 150°C j K1 V (typ) 0.75 V F A1 t (typ) 41 ns rr K2 FEATURES AND BENEFITS A2 ■ Suited for SMPS ISOTOP ■ Very Low Forward Losses STTH20002TV1 ■ Low recovery time ■ High surge current capability ■ Insulated: Insulating voltage=2500V RMS Capacitance = 55pF DESCRIPTION Dual rectifier suited for welding equipment, high power industrial application. Packaged in Isotop, this device is intended for use in the secondary rectification of the applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I RMS forward voltage 170 A F(RMS) I Average forward current Tc = 95°C Per diode 100 A F(AV) δ = 0.5 Tc = 80°C Per diode 120 I Surge non repetitive forward current tp = 10ms sinusoidal 1000 A FSM T Storage temperature range -55 to + 150 °C stg T Maximum operating junction temperature 150 °C j Order Codes Part Number Marking STTH20002TV1 STTH20002TV1 July 2004 REV. 2 1/5

STTH20002TV THERMAL RESISTANCE Symbol Parameter Maximum Unit R Junction to case Per diode 0.52 °C/W th(j-c) Total 0.31 R Coupling 0.1 °C/W th(c) When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit I * Reverse leakage current T = 25°C V = V 100 µA R j R RRM T = 125°C 80 800 j V ** Forward voltage drop T = 25°C I = 100A 1.05 V F j F I = 200A 1.20 F T = 150°C I = 100A 0.75 0.85 j F I = 200A 1.05 F δ Pulse test: * tp = 5 ms, < 2% δ ** tp = 380 µs, < 2% 2 To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.002 IF (RMS) DYNAMIC CHARACTERISTICS (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit t Reverse recovery T = 25°C I = 1A dI /dt = 200 A/µs 41 50 ns rr j F F time V =30V R I Reverse recovery T = 125°C I = 100A V = 160V 11.5 15 A RM j F R current dI /dt = 200 A/µs F t Forward recovery T = 25°C I = 100A dI /dt = 200 A/µs 800 ns fr j F F time V = 1.1 x V FR Fmax V Forward recovery T = 25°C I = 100A dI /dt = 200 A/µs 2.5 V FP j F F voltage 2/5 ®

STTH20002TV Fig. 1: Peak current versus duty cycle (per diode). Fig. 2-1: Forward voltage drop versus forward current (typical values, per diode). IM(A) 600 IFM(A) 200 180 500 T 160 P = 80W 400 δ=tp/T tp 140 Tj=150°C 120 300 P = 120W 100 Tj=25°C P = 160W 80 200 60 40 100 20 VFM(V) δ 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 2-2: Forward voltage drop versus forward Fig. 3: Relative variation of thermal impedance current (maximum values, per diode). junction to case versus pulse duration. IFM(A) Zth(j-c)/Rth(j-c) 200 1.0 180 160 140 Tj=150°C 120 100 Tj=25°C 80 60 40 Single pulse 20 VFM(V) tp(s) 0 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Fig. 4: Junction capacitance versus reverse Fig. 5: Reverse recovery charges versus dI /dt F voltage applied (typical values, per diode). (typical values, per diode). C(pF) Qrr(nC) 10000 1000 F=1MHz IF=100A VOSC=30mVRMS 900 VR=160V Tj=25°C 800 700 600 Tj=125°C 1000 500 400 Tj=25°C 300 200 100 VR(V) dIF/dt(A/µs) 100 0 1 10 100 1000 10 100 1000 3/5 ®

STTH20002TV Fig. 6: Reserve recovery time versus dI /dt Fig. 7: Peak reverse recovery current versus dI /dt F F (typical values, per diode). (typical values, per diode). trr(ns) IRM(A) 120 25 IF=100A IF=100A VR=160V VR=160V 100 20 Tj=125°C 80 15 60 Tj=25°C Tj=125°C 10 40 Tj=25°C 5 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 10 100 1000 10 100 1000 Fig. 8: Dynamic parameters versus junction temperature. QRR;IRM[Tj] /QRR;IRM[Tj=125°C] 1.4 IF=100A VR=160V 1.2 1.0 IRM 0.8 0.6 QRR 0.4 0.2 Tj(°C) 0.0 25 50 75 100 125 150 4/5 ®

STTH20002TV PACKAGE MECHANICAL DATA ISOTOP REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 ORDERING INFORMATION Delivery Ordering type Marking Package Weight Base qty mode 27 g 10 STTH20002TV1 STTH20002TV1 ISOTOP (without (with Tube screws) screws) ■ Epoxy meets UL94, V0 ■ Cooling method: by conduction (C) REVISION HISTORY Table 1: Revision history Date Revision Description of Changes 26-May-2004 1 First issue 13-Jul-2004 2 Figure 6 legend corrected: “Forward” changed to “Reverse” Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com 5/5 ®

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