STTH1L06 Turbo 2 ultrafast high voltage rectifier Features ■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching and conduction losses ■ Low thermal resistance DO-41 SMB Description STTH1L06 STTH1L06U The STTH1L06/U/A, which is using ST Turbo 2 600 V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. The device is also intended for use as a free SMA wheeling diode in power supplies and other power STTH1L06A switching applications. T able 1. Device summary Symbol Value I 1 A F(AV) V 600 V RRM I (max) 75 µA R T (max) 175 °C j V (max) 1.05 V F t (max) 80 ns rr October 2009 Doc ID 8321 Rev 4 1/9 www.st.com 9

Characteristics STTH1L06 1 Characteristics Table 2. A bsolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM DO-41 10 I Forward rms voltage A F(RMS) SMA / SMB 7 DO-41 T = 120 °C c I Average forward current δ = 0.5 SMA T = 135 °C 1 A F(AV) c SMB T = 145 °C c t = 10 ms sinusoidal DO-41 30 I Surge non repetitive forward current p A FSM t = 10 ms sinusoidal SMA / SMB 20 p T Storage temperature range -65 to + 175 °C stg T Maximum operating junction temperature 175 °C j Table 3. T hermal parameters Symbol Parameter Value (max) Unit L = 10 mm DO-41 45 R Junction to lead SMA 30 th(j-l) °C/W SMB 25 R Junction to ambient (1) L = 10 mm DO-41 70 th(j-a) 1. Rth(j-a) is measured with a copper area S = 5 cm2 (see Figure 14.) Table 4. S tatic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 °C 1 j I Reverse leakage current V = 600 V µA R R T = 150 °C 10 75 j T = 25 °C 1.3 j V Forward voltage drop I = 1 A V F F T = 150 °C 0.85 1.05 j To evaluate the conduction losses use the following equation: P = 0.89 x I + 0.165 I 2 F(AV) F (RMS) 2/9 Doc ID 8321 Rev 4

STTH1L06 Characteristics Table 5. D ynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I = 1 A, dI /dt = -50, A/µs, t Reverse recovery time T = 25 °C F F 55 80 ns rr j V = 30 V R I = 1 A, dI /dt = 100 A/µs t Forward recovery time T = 25 °C F F 50 ns fr j V = 3.5 V FR Forward recovery V T = 25 °C I = 1 A, dI /dt = 100 A/µs 10 V FP voltage j F F Figure 1. Conduction losses versus Figure 2. Forward voltage drop versus average current forward current P(W) IFM(A) 1.50 δ= 0.05 δ= 0.1 δ= 0.2 δ= 0.5 100.0 1.25 TTjj==115500°°CC δ= 1 ((MMaaxxiimmuumm vvaalluueess)) 1.00 10.0 TTjj==115500°°CC ((TTyyppiiccaallvvaalluueess)) 0.75 Tj=25°C (Maximum values) 0.50 1.0 T 0.25 IF(av)(A) δ=tp/T tp VFM(V) 0.00 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 3. Relative variation of thermal Figure 4. Relative variation of thermal impedance junction ambient versus impedance junction ambient versus pulse duration pulse duration Zth(j-a)/Rth(j-a) Zth(j-a)/Rth(j-a) 1.0 1.0 DO-41 epoxyFR4,Lead=10mm SMB epoxy FR4,S = 1 cm² 0.9 Lleads = 10mm 0.9 0.8 0.8 0.7 0.7 0.6 0.6 δ= 0.5 δ= 0.5 0.5 0.5 0.4 0.4 0.3 0.3 δ= 0.2 0.2 δ= 0.2 T 0.2 δ= 0.1 T δ= 0.1 0.1 Single pulse tp(s) δ=tp/T tp 0.1 Single pulse tp(s) δ=tp/T tp 0.0 0.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Doc ID 8321 Rev 4 3/9

Characteristics STTH1L06 Figure 5. R elative variation of thermal Figure 6. Peak reverse recovery current impedance junction ambient versus versus dI /dt (90% confidence) F pulse duration (epoxy FR4) Zth(j-a)/Rth(j-a) IRM(A) 1.0 2.5 SMA VR=400V 0.9 2.3 Tj=125°C IIFF==22 xx IIFF((aavv)) 0.8 2.0 IIFF==IIFF((aavv)) 0.7 1.8 IIFF==00..55 xx IIFF((aavv)) 0.6 δ= 0.5 1.5 0.5 1.3 IIFF==00..2255 xx IIFF((aavv)) 0.4 1.0 0.3 δ= 0.2 0.8 0.2 δ= 0.1 T 0.5 0.1 Single pulse tp(s) δ=tp/T tp 0.3 dIF/dt(A/µs) 0.0 0.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 5 10 15 20 25 30 35 40 45 50 Figure 7. R everse recovery time versus dI /dt Figure 8. Reverse recovery charges versus F (90% confidence) dI /dt (90% confidence) F trr(ns) Qrr(nC) 800 220 700 VTjR==142050°CV 200 VTjR==142050°CV IF=2 x IF(av) 180 600 160 IF=IF(av) 500 140 IIFF==22 xx IIFF((aavv)) 120 IF=0.5 x IF(av) 400 IIFF==IIFF((aavv)) IIFF==00..55 xx IIFF((aavv)) 100 300 80 200 60 40 100 dIF/dt(A/µs) 20 dIF/dt(A/µs) 0 0 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 Figure 9. S oftness factor versus dI /dt Figure 10. Relative variations of dynamic F (typical values) parameters versus junction temperature S factor 1.25 2.0 Sfactor 1.8 1.00 1.6 1.4 IRM 0.75 1.2 QRR 1.0 0.50 0.8 0.6 0.25 0.4 IF=IF(av) 0.2 dIF/dt(A/µs) VIFR==IF4(0a0vV) Tj(°C) RefereVnRc=e4:0T0j=V125°C Tj=125°C 0.00 0.0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 45 50 4/9 Doc ID 8321 Rev 4

STTH1L06 Characteristics Figure 11. T ransient peak forward voltage Figure 12. Forward recovery time versus dI /dt F versus dI /dt (90% confidence) (90% confidence) F VFP(V) tfr(ns) 25 200 TIFj==1IF2(5a°vC) 180 VFR=I1F.=1I Fx(VavF) max. Tj=125°C 20 160 140 15 120 100 10 80 60 5 40 dIF/dt(A/µs) 20 dIF/dt(A/µs) 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 Figure 13. J unction capacitance versus Figure 14. Thermal resistance junction to reverse voltage applied ambient versus copper surface (typical values) under each lead C(pF) Rth(j-a)(°C/W) 100 110 VoFs=c1=M30HmzV 100 Epoxy printed circuit board FR4,copper thickness:35 µm Tj=25°C 90 80 DO-41 Lleads=10mm 70 10 60 SMB 50 40 30 20 VR(V) 10 S(cm²) 1 0 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 10 Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) Rth(j-a)(°C/W) 140 130 SMA 120 110 100 90 80 70 60 50 40 30 20 10 S(cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Doc ID 8321 Rev 4 5/9

Package information STTH1L06 2 Package information ● Epoxy meets UL 94, V0 ● Band indicates cathode ● Bending method (DO-41): see Application note AN1471 In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. T able 6. SMA dimensions Dimensions Ref. Millimeters Inches E1 Min. Max. Min. Max. A1 1.90 2.45 0.075 0.094 D A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 E c 0.15 0.40 0.006 0.016 D 2.25 2.90 0.089 0.114 A1 E 4.80 5.35 0.189 0.211 C A2 L b E1 3.95 4.60 0.156 0.181 L 0.75 1.50 0.030 0.059 Figure 16. Footprint (dimensions in mm) 1.4 2.63 1.4 1.64 5.43 6/9 Doc ID 8321 Rev 4

STTH1L06 Package information T able 7. SMB dimensions Dimensions Ref. Millimeters Inches E1 Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 D A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 E c 0.15 0.40 0.006 0.016 A1 D 3.30 3.95 0.130 0.156 E 5.10 5.60 0.201 0.220 C A2 L b E1 4.05 4.60 0.159 0.181 L 0.75 1.50 0.030 0.059 Figure 17. Footprint (dimensions in mm) 1.62 2.60 1.62 2.18 5.84 T able 8. DO-41 (plastic) dimensions Dimensions Ref. Millimeters Inches ØD ØB Min. Max. Min. Max. A 4.07 5.20 0.160 0.205 B 2.04 2.71 0.080 0.107 C A C C 25.4 1 D 0.71 0.86 0.028 0.034 Doc ID 8321 Rev 4 7/9

Ordering information STTH1L06 3 Ordering information T able 9. Ordering information Order code Marking Package Weight Base qty Delivery mode STTH1L06 STTH1L06 DO-41 0.34 g 2000 Ammopack STTH1L06RL STTH1L06 DO-41 0.34 g 5000 Tape and reel STTH1L06U BL6 SMB 0.11 g 2500 Tape and reel STTH1L06A HL6 SMA 0.068 g 5000 Tape and reel 4 Revision history T able 10. Document revision history Date Revision Changes Jul-2002 3C Last issue. 30-Sep-2009 4 Updated table 8 package dimensions. 8/9 Doc ID 8321 Rev 4

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