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  • 型号: STTH10002TV1
  • 制造商: STMicroelectronics
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STTH10002TV1产品简介:

ICGOO电子元器件商城为您提供STTH10002TV1由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STTH10002TV1价格参考。STMicroelectronicsSTTH10002TV1封装/规格:二极管 - 整流器 - 阵列, Diode Array 2 Independent Standard 200V 50A Chassis Mount ISOTOP。您可以下载STTH10002TV1参考资料、Datasheet数据手册功能说明书,资料中有STTH10002TV1 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE ULT FAST 200V 50A ISOTOP整流器 ULTRAFAST RECOVERY DIODE

产品分类

二极管,整流器 - 模块分离式半导体

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,整流器,STMicroelectronics STTH10002TV1-

数据手册

点击此处下载产品Datasheet

产品型号

STTH10002TV1

不同If时的电压-正向(Vf)

1V @ 50A

不同 Vr时的电流-反向漏电流

50µA @ 200V

二极管类型

标准

二极管配置

2 个独立式

产品

Ultra Fast Recovery Rectifiers

产品目录页面

点击此处下载产品Datasheet

产品种类

整流器

供应商器件封装

ISOTOP®

其它名称

497-5272-5

其它有关文件

http://www.st.com/web/catalog/sense_power/FM64/CL830/SC4/SS1650/PF134646?referrer=70071840

包装

管件

反向恢复时间(trr)

65ns

反向电压

200 V

反向电流IR

50 uA

商标

STMicroelectronics

安装类型

底座安装

安装风格

Through Hole

封装

Tube

封装/外壳

ISOTOP

封装/箱体

ISOTOP

工厂包装数量

10

恢复时间

65 ns

最大工作温度

+ 150 C

最大浪涌电流

750 A

最小工作温度

- 55 C

标准包装

10

正向电压下降

1.15 V

正向连续电流

50 A

热阻

*

电压-DC反向(Vr)(最大值)

200V

电流-平均整流(Io)(每二极管)

50A

系列

STTH10002

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Dual Parallel

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PDF Datasheet 数据手册内容提取

STTH10002 Ultrafast recovery diode Datasheet  production data Features ■ Very low forward losses A1 K1 A1 K2 ■ Low recovery time ■ High surge current capability ■ Insulated package A2 K2 K1 A2 – Insulating voltage = 2500 V rms – Capacitance = 45 pF A1 A1 ■ Complies with UL standards (File ref: E81734) K1 K2 Description A2 K1 K2 A2 The STTH10002 is a dual rectifier suited for welding equipment, and high power industrial ISOTOP ISOTOP applications. STTH10002TV1 STTH10002TV2 Packaged in ISOTOP, this device is intended for use in the secondary rectification of power converters. T able 1. Device summary I 2 x 50 A F(AV) V 200 V RRM T (max) 150 °C j V (typ) 0.72 V F t (typ) 30 ns rr October 2012 Doc ID 12363 Rev 2 1/8 This is information on a product in full production. www.st.com 8

Characteristics STTH10002 1 Characteristics Table 2. A bsolute ratings (limiting values at T = 25 °C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I Forward rms current Per diode 150 A F(RMS) Per diode T = 100 °C c I Average forward current,  = 0.5 50 A F(AV) Per device T = 95 °C c I Surge non repetitive forward current t = 10 ms sinusoidal 750 A FSM p T Storage temperature range -55 to + 150 °C stg T Maximum operating junction temperature 150 °C j Table 3. T hermal parameters Symbol Parameter Value Unit Per diode 1 R Junction to case th(j-c) Total 0.55 °C/W R Coupling 0.1 th(c) When the two diodes 1 and 2 are used simultaneously: Tj(diode 1) = P (diode 1) X R (Per diode) + P (diode 2) x R th(j-c) th(c) Table 4. S tatic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 °C - - 50 I (1) Reverse leakage current j V = V µA R R RRM T = 125 °C - 50 500 j I = 50 A - - 1 F T = 25 °C j I = 100 A - - 1.15 F VF(2) Forward voltage drop Tj = 125 °C IF = 100 A - 0.90 1.0 V I = 50 A - 0.72 0.80 F T = 150 °C j IF = 100 A - 0.86 0.97 1. Pulse test: t = 5 ms,  < 2% p 2. Pulse test: t = 380 µs,  < 2% p To evaluate the conduction losses use the following equation: P = 0.63 x I + 0.0034 I 2 F(AV) F (RMS) 2/8 Doc ID 12363 Rev 2

STTH10002 Characteristics Table 5. D ynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I = 1 A, dI /dt = -50 A/µs, F F - 53 65 ns V = 30 V, T = 25 °C R j t Reverse recovery time rr I = 1 A, dI /dt = -200 A/µs, F F - 30 37 V = 30 V, T = 25 °C R j I = 50 A, dI /dt = 200 A/µs, I Reverse recovery current F F - 10 13 A RM V = 160 V, T = 125 °C R j I = 50 A, dI /dt = 200 A/µs t Forward recovery time F F - 180 - ns fr V = 1.1 x V , T = 25 °C FR Fmax j I = 50 A, dI /dt = 200 A/µs, F F V Forward recovery voltage - 1.6 - V FP T = 25 °C j Figure 1. P eak current versus duty cycle Figure 2. Forward voltage drop versus forward current (typical values, per diode) 600 IM(A) IFM(A) TT 300 IIMM 500 dδ==ttpp//TT ttpp 250 400 200 PP == 110000WW 300 150 PP == 6600WW 200 PP == 3300WW 100 Tj=150°C 50 Tj=25°C 100 δ VFM(V) 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 3. F orward voltage drop versus Figure 4. Relative variation of thermal forward current (maximum values, impedance, junction to case, per diode) versus pulse duration IFM(A) Zth(j-c)/Rth(j-c) 300 1.0 Single pulse ISOTOP 250 200 150 100 Tj=150°C 50 Tj=25°C VFM(V) tp(s) 0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Doc ID 12363 Rev 2 3/8

Characteristics STTH10002 Figure 5. J unction capacitance versus Figure 6. Reverse recovery charges versus reverse applied voltage (typical dI /dt (typical values) F values) 1000 C(pF) 450 QRR(nC) VosFcT==j=3120M5m°HVCzRMS 400 VIFR==1 5600 AV 350 300 Tj=125 °C 250 200 150 100 Tj=25 °C 50 VR(V) dIF/dt(A/µs) 100 0 1 10 100 1000 10 100 1000 Figure 7. R everse recovery time versus dI /dt Figure 8. Peak reverse recovery current F (typical values) versus dI /dt (typical values) F 120 tRR(ns) 20 IRM(A) 110100 VIRF== 15600 AV VIFR== 15600 AV 16 90 80 70 Tj=125 °C 12 60 Tj=125 °C 50 8 40 Tj=25 °C 30 4 20 10 dIF/dt(A/µs) Tj=25 °C dIF/dt(A/µs) 0 0 10 100 1000 10 100 1000 Figure 9. Dynamic parameters versus junction temperature QRR;IRM[Tj]/QRR;IRM[Tj=125°C] 1.4 1.2 VIFR== 15600 AV 1.0 0.8 IRM 0.6 QRR 0.4 0.2 Tj(°C) 0.0 25 50 75 100 125 150 4/8 Doc ID 12363 Rev 2

STTH10002 Ordering information scheme 2 Ordering information scheme Figure 10. Ordering information scheme STTH 100 02 TVx Ultrafast switching diode Average forward current 100 = 100 A Repetitive peak reverse voltage 02 = 200V Package TVx = ISOTOP Doc ID 12363 Rev 2 5/8

Package information STTH10002 3 Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. T able 6. ISOTOP dimensions Dimensions Ref. Millimeters Inches E Min. Max. Min. Max. G2 C A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 A A1 B 7.8 8.20 0.307 0.323 C2 E2 C 0.75 0.85 0.030 0.033 F1 F C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 P1 E1 23.85 24.15 0.939 0.951 D S G D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 B G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 ØP G1 F1 4.60 5.00 0.181 0.197 E1 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 6/8 Doc ID 12363 Rev 2

STTH10002 Ordering information 4 Ordering information T able 7. Ordering information Order code Marking Package Weight Base qty(1) Delivery mode STTH10002TV1 STTH10002TV1 10 ISOTOP 27 g Tube with screws STTH10002TV2 STTH10002TV2 1. This product is supplied with 40 terminal screws and washers for each tube. The screws and washers are supplied in a separate pack with the order. 5 Revision history T able 8. Document revision history Date Revision Changes 05-Apr-2006 1 First issue Added UL file reference. Updated storage temperature 23-Oct-2012 2 range in Table2. Added footnote to Table7. Doc ID 12363 Rev 2 7/8

STTH10002 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 Doc ID 12363 Rev 2

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