STS8DN3LLH5 Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8 STripFET™ V Power MOSFET Features R Type V DS(on) I DSS max D STS8DN3LLH5 30 V < 0.019 Ω 10 A (1) 1. The value is rated according R thj-pcb ■ R * Q industry benchmark DS(on) g ■ Extremely low on-resistance R SO-8 DS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Figure 1. Internal schematic diagram Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Table 1. Device summary Order code Marking Package Packaging STS8DN3LLH5 8DN3LL SO-8 Tape and reel January 2010 Doc ID 16967 Rev 1 1/12 www.st.com 12

Contents STS8DN3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 16967 Rev 1

STS8DN3LLH5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 30 V DS GS V Gate-source voltage ± 22 V GS I (1) Drain current (continuous) at T = 25 °C 10 A D C I (1) Drain current (continuous) at T =100 °C 9 A D C I (2) Drain current (pulsed) 40 A DM P (2) Total dissipation at T = 25 °C 2.7 W TOT C Derating factor 0.02 W/°C TJ Operating junction temperature -55 to 150 °C T Storage temperature stg 1. The value is rated according R thj-pcb 2. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Parameter Value Unit R (1) Thermal resistance junction-ambient 47 °C/W thj-pcb 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec Doc ID 16967 Rev 1 3/12

Electrical characteristics STS8DN3LLH5 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 250 µA, V = 0 30 V (BR)DSS voltage D GS I Zero gate voltage drain VDS = max rating, 1 µA DSS current (VGS = 0) VDS =max rating @125 °C 10 µA Gate body leakage current IGSS (V = 0) VGS = ±22 V ±100 nA DS V Gate threshold voltage V = V , I = 250 µA 1 V GS(th) DS GS D R Static drain-source on VGS= 10 V, ID= 5 A 0.0155 0.019 Ω DS(on) resistance V = 4.5 V, I = 5 A 0.020 0.022 Ω GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Input capacitance C 724 pF iss Output capacitance V = 25 V, f=1 MHz, C DS - 132 pF oss Reverse transfer VGS=0 C 21 pF rss capacitance Q Total gate charge V =15 V, I = 10 A 5.4 nC g DD D Q Gate-source charge V = 4.5 V - 2 nC gs GS Q Gate-drain charge Figure14 2.1 nC gd f=1 MHz gate dc bias=0 R Intrinsic gate resistance test signal level = 20 mV - 3.3 Ω G open drain 4/12 Doc ID 16967 Rev 1

STS8DN3LLH5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time 4 ns d(on) V =15 V, I = 5 A, t Rise time DD D 4.2 ns r R =4.7 Ω, V =10 V - - t Turn-off delay time G GS 21.1 ns d(off) Figure13 t Fall time 3.5 ns f Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I Source-drain current - 10 A SD I (1) Source-drain current (pulsed) - 40 A SDM V (2) Forward on voltage I = 10 A, V =0 - 1.1 V SD SD GS t Reverse recovery time I = 10 A, 20.8 ns rr SD Q Reverse recovery charge di/dt = 100 A/µs, - 10.5 nC rr I Reverse recovery current V = 25 V, Tj=150 °C 1 A RRM DD 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 16967 Rev 1 5/12

Electrical characteristics STS8DN3LLH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID AM04963v1 (A) Tj=150°C 100 OpLiermiattieodn ibny tmhias x arReDaS (iosn) TSpcuin=lsg2el5e°C 10 10ms 1 100ms 1s 0.1 0.01 0.1 1 10 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM04954v1 AM04955v1 ID ID (A) VGS=10V (A) VDS=4V 100 100 80 80 5V 60 60 4V 40 40 20 20 3V 0 0 0 1 2 3 4 VDS(V) 0 2 4 6 8 10VGS(V) Figure 6. Normalized B vs temperature Figure 7. Static drain-source on resistance VDSS BVDSS AM04956v1 RDS(on) AM04957v1_a (norm) (Ohm) ID=1mA ID=5A 1.10 25 VGS=10V 1.05 20 1.00 15 0.95 10 0.90 5 -50 0 50 100 150 TJ(°C) 0 2 4 6 8 10 ID(A) 6/12 Doc ID 16967 Rev 1

STS8DN3LLH5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations VGS AM04958v1 C AM04959v1 (V) (pF) 12 VDD=15V 1000 Tf=J=12M5H°Cz ID=11A 10 800 Ciss 8 600 6 400 4 200 2 Coss Crss 0 0 0 2 4 6 8 10 Qg(nC) 0 10 20 VDS(V) Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature VGS(th) AM04960v1 RDS(on) AM04961v1 (norm) (norm) ID=250µA 1.2 ID=5.5A 1.8 VGS=10V 1.1 1.6 1.0 0.9 1.4 0.8 1.2 0.7 1.0 0.6 0.8 0.5 0.4 0.6 -50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C) Figure 12. Source-drain diode forward characteristics VSD AM04961v1 (V) TJ=-50°C 0.9 0.8 TJ=25°C 0.7 0.6 TJ=175°C 0.5 0.4 0 2 4 6 8 10 ISD(A) Doc ID 16967 Rev 1 7/12

Test circuits STS8DN3LLH5 3 Test circuits Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2µ20F0 3µ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD 90% VGS AM01472v1 0 10% AM01473v1 8/12 Doc ID 16967 Rev 1

STS8DN3LLH5 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 16967 Rev 1 9/12

Package mechanical data STS8DN3LLH5 SO-8 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 S 8 (max.) 10/12 Doc ID 16967 Rev 1

STS8DN3LLH5 Revision history 5 Revision history T able 8. Document revision history Date Revision Changes 12-Jan-2010 1 First release Doc ID 16967 Rev 1 11/12

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