STS7NF60L W N-CHANNEL 60V - 0.017 - 7.5A SO-8 STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STS7NF60L 60 V < 0.0195 W 7.5 A n TYPICAL RDS(on) = 0.017 W STANDARD OUTLINE FOR EASY n AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE n DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" SO-8 strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC MOTOR DRIVE n DC-DC CONVERTERS n BATTERY MANAGEMENT IN NOMADIC n EQUIPMENT POWER MANAGEMENT IN n PORTABLE/DESKTOP PCs ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kW ) 60 V VGS Gate- source Voltage ± 16 V ID Drain Current (continuous) at TC = 25°C 7.5 A ID Drain Current (continuous) at TC = 100°C 4.7 A IDM(•) Drain Current (pulsed) 30 A Ptot Total Dissipation at TC = 25°C 2.5 W EAS (1) Single Pulse Avalanche Energy 350 mJ (•) Pulse width limited by safe operating area. (1) Starting Tj = 25 oC, ID = 7.5 A VDD = 30 V April 2002 1/8 .

STS7NF60L THERMAL DATA Rthj-amb(#) Thermal Resistance Junction-ambient Max 50 °C/W Tj Maximum Operating Junction Temperature 150 °C Tstg Storage Temperature -55 to 150 °C (#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec. ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified) case OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS DBrreaaink-dsoowurnc eV oltage ID = 250 µA, VGS = 0 60 V IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA IGSS GCuartree-nbto (dVyD LSe =a k0a)ge VGS = ± 16 V ±100 nA ON (*) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 1 V RDS(on) Static Drain-source On VGS = 10 V ID = 3.5 A 0.017 0.0195 W Resistance VGS = 5 V ID = 3.5 A 0.019 0.0215 W DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VDS = 15 V ID= 3.5 A 13 S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1700 pF Coss Output Capacitance 300 pF Crss Reverse Transfer 100 pF Capacitance 2/8

STS7NF60L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*) Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 30 V ID = 3.5 A 15 ns tr Rise Time RG=4.7 W VGS = 4.5 V 27 ns (Resistive Load, Figure 1) Qg Total Gate Charge VDD= 48V ID 7.5A VGS=4.5V 25 34 nC Qgs Gate-Source Charge 4.5 nC Qgd Gate-Drain Charge (see test circuit, Figure 2) 7 nC SWITCHING OFF (*) Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) Turn-off Delay Time VDD = 30 V ID = 3.5 A 47 ns tf Fall Time RG=4.7W, VGS = 4.5 V 20 ns (Resistive Load, Figure 1) SOURCE DRAIN DIODE (*) Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 7.5 A ISDM (•) Source-drain Current (pulsed) 30 A VSD Forward On Voltage ISD = 7.5 A VGS = 0 1.2 V trr Reverse Recovery Time ISD =7.5 A di/dt = 100A/µs 55 ns Qrr Reverse Recovery Charge VDD = 20 V Tj = 150°C 110 nC IRRM Reverse Recovery Current (see test circuit, Figure 3) 3.9 A (*) Pulse width [ 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8

STS7NF60L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8

STS7NF60L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/8

STS7NF60L FFiigg.. 11:: UUnnccllaammppeedd IInndduuccttiivvee LLooaadd TTeesstt CCiirrccuuiitt Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Fig. 4: Gate Charge test Circuit Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8

STS7NF60L SO-8 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 S 8 (max.) 0016023 7/8

STS7NF60L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (cid:226) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8