STS2DNF30L Ω Dual n-channel 30 V, 0.09 , 3 A SO-8 STripFET™ Power MOSFET Features Type V R max I DSS DS(on) D STS2DNF30L 30V <0.11Ω 3A ■ Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Application ■ Switching applications Description This Power MOSFET is the latest development of Figure 1. Internal schematic diagram STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order code Marking Package Packaging STS2DNF30L 2DF30L SO-8 Tape and reel November 2009 Doc ID 7200 Rev 7 1/12 www.st.com 12

Contents STS2DNF30L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 7200 Rev 7

STS2DNF30L Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (v = 0) 30 V DS gs V Gate- source voltage ±18 V GS I Drain current (continuous) at T = 25°C 3 A D C I Drain current (continuous) at T = 100°C 1.9 A D C I (1) Drain current (pulsed) 9 A DM Total dissipation at T = 25°C dual operation 1.6 W P C TOT Total dissipation at T = 25°C single operation 2 W C T Storage temperature -55 to 150 °C stg T Max. operating junction temperature 150 °C j 1. Pulse width limited by safe operating area Table 3. Thermal data Symbol Parameter Value Unit Thermal resistance junction-ambient max single 62.5 operation R °C/W thj-a Thermal resistance junction-ambient max dual 78 operation T Maximum operating junction ambient 150 °C J T Storage temperature -55 to 175 °C stg Doc ID 7200 Rev 7 3/12

Electrical characteristics STS2DNF30L 2 Electrical characteristics (T =25°C unless otherwise specified) CASE T able 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250 µA, V = 0 30 V (BR)DSS Breakdown voltage D GS V = Max rating 1 µA DS Zero gate voltage IDSS Drain current (VGS = 0) VDS=Max rating, 10 µA T =125°C C Gate-body leakage I V = ±18V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250µA 1 1.7 2.5 V GS(th) DS GS D R Static drain-source on VGS = 10V, ID = 1A 0.09 0.11 Ω DS(on) resistance V = 5V, I = 1A 0.13 0.15 Ω GS D T able 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit V >I xR g (1) Forward transconductance DS D(on) DS(on)max - 2.5 - S fs I =2.5A D C Input capacitance 121 pF iss Coss Output capacitance VDS = 25V, f = 1 MHz, - 45 - pF V = 0 Reverse transfer GS C 11 pF rss capacitance Q Total gate charge - 4.5 - nC g V = 24V, I = 2A, Q Gate-source charge DD D - 1.7 - nC gs V = 10V GS Q Gate-drain charge - 0.9 - nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit V =15 V, I =1A, t Turn-on delay time DD D 19 ns d(on) R =4.7Ω, V = 4.5V - - t Rise time G GS 20 ns r (see Figure 13) V =15 V, I =1A, t Turn-off delay time DD D 12 ns d(off) R =4.7Ω, V = 4.5V - - t Fall time G GS 8 ns f (see Figure 13) 4/12 Doc ID 7200 Rev 7

STS2DNF30L Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit I Source-drain current - 3 A SD I (1) Source-drain current (pulsed) - 12 A SDM V (2) Forward on voltage I = 2A, V = 0 - 1.3 V SD SD GS I = 2A, V = 30V t Reverse recovery time SD DD 19 ns rr di/dt = 100A/µs, Q Reverse recovery charge - 8.1 nC rr T = 150°C I Reverse recovery current j 0.85 A RRM (see Figure 15) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 7200 Rev 7 5/12

Electrical characteristics STS2DNF30L 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/12 Doc ID 7200 Rev 7

STS2DNF30L Electrical characteristics Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs. vs. temperature temperature Figure 12. Source-drain diode forward characteristics Doc ID 7200 Rev 7 7/12

Test circuits STS2DNF30L 3 Test circuits Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/12 Doc ID 7200 Rev 7

STS2DNF30L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 7200 Rev 7 9/12

Package mechanical data STS2DNF30L SO-8 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 S 8 (max.) 10/12 Doc ID 7200 Rev 7

STS2DNF30L Revision history 5 Revision history T able 8. Document revision history Date Revision Changes 21-Jun-2004 3 Complete document. 10-Nov-2006 4 The document has been reformatted. 31-Jan-2007 5 Typo mistake on Table2. 03-May-2007 6 R Max value has been changed. DS(on) 03-Nov-2009 7 Updated marking in Table1. Doc ID 7200 Rev 7 11/12

STS2DNF30L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 7200 Rev 7

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STS2DNF30L