STS11NF30L Ω N-channel 30V - 0.0085 - 11A SO-8 Low gate charge STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STS11NF30L 30V <0.009Ω 11A ■ Optimal R (on) x Qg trade-off DS ■ Conduction losses reduced Description S0-8 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and Internal schematic diagram less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Order codes Part number Marking Package Packaging STS11NF30L 11F30L- SO-8 Tape & reel January 2007 Rev 11 1/12 www.st.com 12

Contents STS11NF30L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12

STS11NF30L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 30 V DS GS V Gate-source voltage ± 18 V GS I (1) Drain current (continuous) at T = 25°C 11 A D C I Drain current (continuous) at T = 100°C 7 A D C I (2) Drain current (pulsed) 44 A DM P Total dissipation at T = 25°C 2.5 W TOT C Derating factor 0.02 W/°C dv/dt(3) Peak diode recovery voltage slope 5.5 V/ns T Operating junction temperature -55 to 150 J °C T Storage temperature 150 stg 1. Current limited by the package 2. Pulse width limited by safe operating area 3. I ≤11A, di/dt ≤ 370A/µs, V ≤ V , T ≤ T SD DD (BR)DSS j JMAX Table 2. Thermal data Thermal resistance junction-ambient R 50 °C/W thj-a Max(1) Maximum lead temperature for soldering T 150 °C l purpose 1. When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec 3/12

Electrical characteristics STS11NF30L 2 Electrical characteristics (T =25°C unless otherwise specified) CASE T able 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250 µA, V = 0 30 V (BR)DSS breakdown voltage D GS V = Max rating 1 µA DS Zero gate voltage IDSS drain current (VGS = 0) VDS=Max rating, 10 µA T =125°C C Gate-body leakage I V = ± 18V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250µA 1 V GS(th) DS GS D R Static drain-source on VGS = 10V, ID = 5.5A 0.0085 0.0105 Ω DS(on) resistance V = 5V, I = 5.5A 0.0145 0.0190 Ω GS D T able 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) Forward transconductance V = 25V I =5.5A 15 S fs DS , D C Input capacitance 1440 pF iss Coss Output capacitance VDS = 25V, f = 1 MHz, 560 pF V = 0 Reverse transfer GS C 135 pF rss capacitance Q Total gate charge 22.5 30 nC g V = 15V, I = 11A, Q Gate-source charge DD D 9 nC gs V =5V GS Q Gate-drain charge 12 nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 . T able 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit V =15 V, I =5.5A, DD D t Turn-on delay time 22 ns d(on) R =4.7Ω, V = 5V t Rise time G GS 39 ns r (see Figure 13) V = 15V, I = 5.5A, t Turn-off-delay time DD D 23 ns d(off) R =4.7Ω, V = 5V t Fall time G GS 16 ns f (see Figure 13) 4/12

STS11NF30L Electrical characteristics T able 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I Source-drain current 11 A SD I (1) Source-drain current (pulsed) 44 A SDM V (2) Forward on voltage I = 11A, V = 0 1.2 V SD SD GS I = 11A, V = 20V t Reverse recovery time SD DD 42 ns rr di/dt = 100A/µs, Q Reverse recovery charge 52 nC rr T = 150°C I Reverse recovery current j 2.5 A RRM (see Figure 15) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/12

Electrical characteristics STS11NF30L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12

STS11NF30L Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs vs temperature temperature Figure 11. Source-drain diode forward Figure 12. Normalized Breakdown Voltage vs characteristics Temperature 7/12

Test circuit STS11NF30L 3 Test circuit Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/12

STS11NF30L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12

Package mechanical data STS11NF30L SO-8 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M 0.6 0.023 S 8 (max.) 10/12

STS11NF30L Revision history 5 Revision history T able 7. Revision history Date Revision Changes 09-Sep-2004 9 Complete version 17-Aug-2006 10 The document has been reformatted 12-Jan-2007 11 Updates in Safe operating area 11/12

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