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STPS60L30CW产品简介:
ICGOO电子元器件商城为您提供STPS60L30CW由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STPS60L30CW价格参考。STMicroelectronicsSTPS60L30CW封装/规格:二极管 - 整流器 - 阵列, Diode Array 1 Pair Common Cathode Schottky 30V 30A Through Hole TO-247-3。您可以下载STPS60L30CW参考资料、Datasheet数据手册功能说明书,资料中有STPS60L30CW 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 30V 30A TO247肖特基二极管与整流器 2X30 Amp 30 Volt |
产品分类 | 二极管,整流器 - 阵列分离式半导体 |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,肖特基二极管与整流器,STMicroelectronics STPS60L30CW- |
数据手册 | |
产品型号 | STPS60L30CW |
不同If时的电压-正向(Vf) | 460mV @ 30A |
不同 Vr时的电流-反向漏电流 | 4mA @ 30V |
二极管类型 | 肖特基 |
二极管配置 | 1 对共阴极 |
产品 | Schottky Rectifiers |
产品目录页面 | |
产品种类 | 肖特基二极管与整流器 |
供应商器件封装 | TO-247-3 |
其它名称 | 497-2755-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM64/CL1571/SC541/SS1617/PF64906?referrer=70071840 |
包装 | 管件 |
反向恢复时间(trr) | - |
商标 | STMicroelectronics |
安装类型 | 通孔,径向 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-247-3 |
封装/箱体 | TO-247 |
峰值反向电压 | 30 V |
工作温度范围 | + 150 C |
工厂包装数量 | 600 |
技术 | Silicon |
最大反向漏泄电流 | 4000 uA |
最大工作温度 | + 150 C |
最大浪涌电流 | 600 A |
最小工作温度 | - 65 C |
标准包装 | 30 |
正向电压下降 | 0.55 V at 60 A |
正向连续电流 | 30 A |
热阻 | 0.45°C/W Jc |
电压-DC反向(Vr)(最大值) | 30V |
电流-平均整流(Io)(每二极管) | 30A |
系列 | STPS60L30CW |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Dual Common Cathode |
STPS60L30CW ® LOW DROP POWER SCHOTTKY RECTIFIER MAINPRODUCTCHARACTERISTICS A1 I 2x30A F(AV) K V 30V RRM A2 Tj(max) 150°C V (max) 0.38V F FEATURESANDBENEFITS VERYSMALLCONDUCTIONLOSSES n NEGLIGIBLESWITCHINGLOSSES n n EXTREMELYFASTSWITCHING A2 LOWFORWARDVOLTAGEDROP K n A1 LOWTHERMALRESISTANCE n AVALANCHECAPABILITYSPECIFIED n DESCRIPTION TO247 DualcentertapSchottkyrectifiersuitedforSwitch ModePowerSupplyandhighfrequencyDCtoDC converters. Packaged in TO247, this device is intended for use in low voltage, high frequency inverters, free-wheelingandpolarityprotectionapplications. ABSOLUTE RATINGS(limitingvalues,perdiode) Symbol Parameter Value Unit VRRM Repetitivepeakreversevoltage 30 V IF(RMS) RMSforwardcurrent 50 A IF(AV) Averageforwardcurrent Tc=130(cid:176) C Per diode 30 A d =0.5 Perdevice 60 IFSM Surgenonrepetitiveforwardcurrent tp=10msSinusoidal 600 A IRRM Peakrepetitivereversecurrent tp=2µsF=1kHz square 2 A PARM Repetitivepeakavalanchepower tp=1µs Tj=25°C 11000 W Tstg Storagetemperaturerange -65 to+150 °C Tj Maximumoperatingjunctiontemperature* 150 (cid:176) C dV/dt Criticalrateofrisereversevoltage 10000 V/µs dPtot 1 * : < thermal runawayconditionforadiodeonitsownheatsink dTj Rth(j- a) July2003-Ed:3A 1/4
STPS60L30CW THERMAL RESISTANCE Symbol Parameter Value Unit Rth(j-c) Junctiontocase Perdiode 0.8 °C/W Total 0.45 R Coupling 0.1 °C/W th(c) Whenthediodes1and2areusedsimultaneously: D Tj(diode1)= P(diode1)xR (Perdiode)+ P(diode2)xR th(j-c) th(c) STATICELECTRICALCHARACTERISTICS(perdiode) Symbol Parameter TestsConditions Min. Typ. Max. Unit IR* Reverseleakage Tj=25(cid:176) C VR=VRRM 4 mA current Tj=125(cid:176) C 250 500 mA VF* Forwardvoltagedrop Tj=25(cid:176) C IF= 30A 0.46 V Tj=125(cid:176) C I = 30A 0.33 0.38 F Tj=25(cid:176) C I = 60A 0.55 F Tj=125(cid:176) C I = 60A 0.45 0.5 F Pulsetest: * tp=380µs,d <2% Toevaluatetheconductionlossesusethefollowingequation: P=0.26xI +0.004I 2 F(AV) F (RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient averageforwardcurrent(perdiode). temperature(d =0.5)(perdiode). PF(av)(W) IF(av)(A) 18 35 16 d=0.2 d=0.5 d=1 30 Rth(j-a)=Rth(j-c) 14 d=0.1 25 12 d=0.05 10 20 Rth(j-a)=15°C/W 8 15 6 T 10 T 4 5 2 IF(av) (A) d =tp/T tp d =tp/T tp Tamb(°C) 0 0 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versuspulseduration. versusjunctiontemperature. PARM(tp) PARM(tp) PARM(1µs) PARM(25°C) 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 tp(µs) Tj(°C) 0.001 0 0.01 0.1 1 10 100 1000 0 25 50 75 100 125 150 2/4
STPS60L30CW Fig. 5: Non repetitive surge peak forward current Fig. 6: Relative variation of thermal impedance versus overload duration (maximum values) (per junctiontocaseversuspulseduration. diode). IM(A) Zth(j-c)/Rth(j-c) 500 1.0 450 400 0.8 350 300 0.6 d=0.5 Tc=25°C 250 200 Tc=75°C 0.4 150 d=0.2 T 100 IM Tc=125°C 0.2 d=0.1 50 d=t0.5 t(s) Single pulse tp(s) d =tp/T tp 0 0.0 1E-3 1E-2 1E-1 1E+0 1E-4 1E-3 1E-2 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse Fig. 8: Junction capacitance versus reverse voltageapplied(typicalvalues)(perdiode). voltageapplied(typicalvalues)(perdiode). IR(mA) C(nF) 2E+3 10 1E+3 F=1MHz Tj=25°C Tj=150°C 1E+2 Tj=125°C 5 1E+1 1E+0 2 1E-1 Tj=25°C VR(V) VR(V) 1E-2 1 0 5 10 15 20 25 30 1 2 5 10 20 50 Fig. 9: Forward voltage drop versus forward current(maximumvalues-perdiode). IFM(A) 200 100 Tj=150°C (typical values) Tj=25°C Tj=125°C 10 VFM(V) 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 3/4
STPS60L30CW PACKAGEMECHANICALDATA TO247 DIMENSIONS REF. Millimeters Inches V Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 V Dia. D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 A H F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 L5 F4 3.00 3.40 0.118 0.133 L G 10.90 0.429 H 15.45 15.75 0.608 0.620 L2 L4 L 19.85 20.15 0.781 0.793 F1 F2 L1 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 F3 D V2 L3 L3 14.20 14.80 0.559 0.582 F4 L4 34.60 1.362 F(x3) L5 5.50 0.216 M E G M 2.00 3.00 0.078 0.118 = = V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 Coolingmethod:C n Recommendedtorquevalue:0.8m.N n Maximumtorquevalue:1m.N n Orderingtype Marking Package Weight Baseqty Deliverymode STPS60L30CW STPS60L30CW TO247 4.36g 30 Tube EpoxymeetsUL94,V0 n Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof useofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.Nolicenseisgrantedby implicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjectto changewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied. STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswritten approvalofSTMicroelectronics. TheSTlogoisaregisteredtrademarkofSTMicroelectronics ©2003STMicroelectronics-PrintedinItaly-Allrightsreserved. STMicroelectronicsGROUPOFCOMPANIES Australia-Brazil-Canada-China-Finland-France-Germany HongKong-India-Israel-Italy-Japan-Malaysia-Malta-Morocco-Singapore Spain-Sweden-Switzerland-UnitedKingdom-UnitedStates. http://www.st.com 4/4
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