STPS41L45CG/CT/CR ® LOW DROP POWER SCHOTTKY RECTIFIER MAINPRODUCTSCHARACTERISTICS A1 IF(AV) 2x20A K VRRM 45V A2 Tj(max) 150°C V (max) 0.47V F FEATURESANDBENEFITS n VERYSMALLCONDUCTIONLOSSES A2 A2 K K n NEGLIGIBLESWITCHINGLOSSES A1 A1 EXTREMELYFASTSWITCHING n I2PAK TO-220AB LOWFORWARDVOLTAGEDROP n STPS41L45CR STPS41L45CT LOWTHERMALRESISTANCE n AVALANCHECAPABILITYSPECIFIED n K DESCRIPTION Dual center tab Schottky rectifier suited for 5V A2 outputinofflineAC/DCpowersupplies. A1 Packaged in D2PAK, I PAK and TO-220AB this 2 device is intended for use in low voltage, high D2PAK frequency inverters, free-wheeling and polarity STPS41L45CG protectionapplications. ABSOLUTE RATINGS(limitingvalues,perdiode) Symbol Parameter Value Unit VRRM Repetitivepeakreversevoltage 45 V IF(RMS) RMSforwardcurrent 30 A IF(AV) Averageforwardcurrent Tc=130°C Perdiode 20 d =0.5 Perdevice 40 A IFSM Surgenonrepetitiveforwardcurrent tp=10mssinusoidal 220 A IRRM Peakrepetitivereversecurrent tp=2µs square F=1kHz 1 A PARM Repetitivepeakavalanchepower tp=1µs Tj=25°C 10000 W Tstg Storagetemperaturerange -65 to+175 (cid:176) C Tj Maximumoperatingjunctiontemperature* 150 (cid:176) C dV/dt Criticalrateofrisereversevoltage 10000 V/µs dPtot 1 * : < thermal runawayconditionforadiodeonitsownheatsink dTj Rth(j- a) July 2003-Ed:3A 1/6

STPS41L45CG / STPS41L45CT / STPS41L45CR THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junctiontocase Perdiode 1.5 (cid:176) C/W Total 0.8 Rth(c) Coupling 0.1 Whenthediodes1and2areusedsimultaneously: D Tj(diode1)= P(diode1)xR (Perdiode)+ P(diode2)xR th(j-c) th(c) STATICELECTRICALCHARACTERISTICS(perdiode) Symbol Parameter TestsConditions Min. Typ. Max. Unit IR* Reverseleakagecurrent Tj=25°C VR=VRRM 1.2 mA Tj=125°C 110 220 mA VF* Forwardvoltagedrop Tj=25(cid:176) C IF= 20A 0.53 V Tj=125°C I = 20A 0.42 0.47 F Tj=25(cid:176) C I = 40A 0.68 F Tj=125°C I = 40A 0.60 0.66 F Pulsetest: *tp=380µs,d <2% Toevaluatetheconductionlossesusethefollowingequation: P=0.28xI +0.0095I 2 F(AV) F (RMS) Fig.1:Conductionlossesversusaveragecurrent. Fig. 2: Average forward current versus ambient temperature(d =0.5). PF(av)(W) IF(av)(A) 14 25 d = 0.2 d = 0.5 d = 0.1 12 d = 0.05 d = 1 20 Rth(j-a)=Rth(j-c) 10 15 8 6 10 4 Rth(j-a)=50°C/W T 5 T 2 IF(av)(A) d =tp/T tp d=tp/T tp Tamb(°C) 0 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 0 25 50 75 100 125 150 2/6

STPS41L45CG / STPS41L45CT / STPS41L45CR Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versuspulseduration. versusjunctiontemperature. PARM(tp) PARM(tp) PARM(1µs) PARM(25°C) 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 tp(µs) Tj(°C) 0.001 0 0.01 0.1 1 10 100 1000 0 25 50 75 100 125 150 Fig. 5: Non repetitive surge peak forward current Fig. 6: Relative variation of thermal impedance versusoverloadduration(maximumvalues). junctiontocaseversuspulseduration. IM(A) Zth(j-c)/Rth(j-c) 220 1.0 200 0.9 180 0.8 160 0.7 140 d = 0.5 Tc=25°C 0.6 120 0.5 100 Tc=75°C 0.4 d = 0.2 80 60 Tc=125°C 0.3 d = 0.1 T 40 IM 0.2 Single pulse 20 d=t0.5 t(s) 0.1 tp(s) d =tp/T tp 0 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 Fig. 7: Reverse leakage current versus reverse Fig.8:Junctioncapacitanceversusreversevoltage voltageapplied(typicalvalues). applied(typicalvalues). IR(mA) C(nF) 1.E+03 10.0 F=1MHz Tj=150°C Vosc=30mV Tj=25°C 1.E+02 Tj=125°C 1.E+01 Tj=100°C Tj=75°C 1.0 1.E+00 Tj=50°C 1.E-01 Tj=25°C VR(V) VR(V) 1.E-02 0.1 0 5 10 15 20 25 30 35 40 45 1 10 100 3/6

STPS41L45CG / STPS41L45CT / STPS41L45CR Fig.9:Forwardvoltagedropversusforwardcurrent. Fig.10:Thermalresistancejunctiontoambientver- sus copper surface under tab (epoxy printed board FR4,Cu=35µm)(STPS41L45CGonly). IFM(A) Rth(j-a)(°C/W) 100 80 70 TTjj==112255°°CC 60 ((MMaaxxiimmuumm vvaalluueess)) 50 TTjj==112255°°CC 10 ((TTyyppiiccaallvvaalluueess)) 40 Tj=25°C (Maximum values) 30 20 10 VFM(V) S(cm²) 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 15 20 25 30 35 40 PACKAGEMECHANICALDATA D2PAK DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A A 4.40 4.60 0.173 0.181 E C2 L2 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 D B 0.70 0.93 0.027 0.037 L B2 1.14 1.70 0.045 0.067 L3 C 0.45 0.60 0.017 0.024 A1 C2 1.23 1.36 0.048 0.054 B2 C R D 8.95 9.35 0.352 0.368 B E 10.00 10.40 0.393 0.409 G G 4.88 5.28 0.192 0.208 A2 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 M * L3 1.40 1.75 0.055 0.069 V2 M 2.40 3.20 0.094 0.126 * FLAT ZONE NO LESSTHAN 2mm R 0.40typ. 0.016typ. V2 0° 8° 0° 8° FOOTPRINT(dimensionsinmm) 16.90 10.30 5.08 1.30 3.70 8.90 4/6

STPS41L45CG / STPS41L45CT / STPS41L45CR PACKAGEMECHANICALDATA I2PAK DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A A 4.40 4.60 0.173 0.181 E c2 A1 2.49 2.69 0.098 0.106 L2 b 0.70 0.93 0.028 0.037 b1 1.14 1.17 0.044 0.046 D b2 1.14 1.17 0.044 0.046 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.054 L1 A1 D 8.95 9.35 0.352 0.368 b2 e 2.40 2.70 0.094 0.106 L b1 E 10.0 10.4 0.394 0.409 L 13.1 13.6 0.516 0.535 b c L1 3.48 3.78 0.137 0.149 e L2 1.27 1.40 0.050 0.055 5/6

STPS41L45CG / STPS41L45CT / STPS41L45CR PACKAGEMECHANICALDATA TO-220AB DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. H2 A A 4.40 4.60 0.173 0.181 Dia C C 1.23 1.32 0.048 0.051 L5 D 2.40 2.72 0.094 0.107 L7 E 0.49 0.70 0.019 0.027 L6 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 L2 F2 F2 1.14 1.70 0.044 0.066 F1 L9 D G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 L4 H2 10 10.40 0.393 0.409 F L2 16.4typ. 0.645typ. M L4 13 14 0.511 0.551 G1 E L5 2.65 2.95 0.104 0.116 G L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6typ. 0.102typ. Diam. 3.75 3.85 0.147 0.151 Orderingtype Marking Package Weight Baseqty Deliverymode STPS41L45CG STPS41L45CG D2PAK 1.48g 50 Tube STPS41L45CG-TR STPS41L45CG D2PAK 1.48g 1000 Tape&reel STPS41L45CT STPS41L45CT TO-220AB 2.20g 50 Tube STPS41L45CR STPS41L45CR I2PAK 1.49g 50 Tube EPOXYMEETSUL94,V0 n Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof useofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.Nolicenseisgrantedby implicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjectto changewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied. STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswritten approvalofSTMicroelectronics. TheSTlogoisaregisteredtrademarkofSTMicroelectronics ©2003STMicroelectronics-PrintedinItaly-Allrightsreserved. STMicroelectronicsGROUPOFCOMPANIES Australia-Brazil-Canada-China-Finland-France-Germany HongKong-India-Israel-Italy-Japan-Malaysia-Malta-Morocco-Singapore Spain-Sweden-Switzerland-UnitedKingdom-UnitedStates. http://www.st.com 6/6