STPS3L60U-Y Automotive power Schottky rectifier Datasheet  production data Features  Negligible switching losses A  Low forward voltage drop  Avalanche capability specified K  AEC-Q101 qualified SMB Description STPS3L60UY Surface mount power Schottky rectifier suited for high frequency DC to DC converters. Packaged in Table 1. Device summary SMB, this device is intended for use in low voltage, high frequency inverters and small Symbol Value battery chargers and for applications where there IF(AV) 3 A are space constraints. V 60 V RRM T 150 °C j (max) V 0.61 V F (max) March 2013 DocID024414 Rev 1 1/7 This is information on a product in full production. www.st.com 7

Characteristics STPS3L60U-Y 1 Characteristics Table 2. Absolute ratings(1) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I RMS forward current 10 A F(RMS) IF(AV) Average forward current TL = 105 °C = 0.5 3 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2000 W T Storage temperature range -65 to + 150 °C stg T Operating junction temperature(2) range -40 to + 150 °C j dV/dt Critical rate of rise reverse voltage 10000 V/µs 1. limiting values, per diode 2. d----P-----t--o----t------------1-------------- condition to avoid thermal runaway for a diode on its own heatsink dTj Rthj–a Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to leads 20 C/W th (j-l) Table 4. Static electrical characteristics Symbol Parameter Tests Conditions Min. Typ. Max. Unit T = 25 °C - - 150 µA j I (1) Reverse leakage current T = 100 °C V = V - 4 15 R j R RRM mA T = 125 °C - 14 30 j T = 25 °C - - 0.62 j T = 100 °C I = 3 A - 0.53 0.61 j F T = 125 °C - 0.51 0.59 V (1) Forward voltage drop j V F T = 25 °C - - 0.79 j T = 100 °C I = 6 A - 0.62 0.71 j F T = 125 °C - 0.6 0.69 j 1. Pulse test: t = 380 µs,  < 2% p To evaluate the conduction losses use the following equation: P = 0.44 x IF(AV) + 0.05 x IF2(RMS) 2/7 DocID024414 Rev 1

STPS3L60U-Y Characteristics Figure 1. Average forward power dissipation Figure 2. Average forward current versus versus average forward current ambient temperature (= 0.5) PF(AV)(W) IF(AV)(A) 2.50 3.5 2.25 δ= 0.05 δ= 0.1 δ= 0.2 δ= 0.5 Rth(j-a)=Rth(j-I) 3.0 2.00 1.75 δ= 1 2.5 1.50 2.0 1.25 Rth(j-a)=80°C/W 1.5 1.00 0.75 1.0 T 0.50 0.5 0.25 IF(AV)(A) δ=tp/T tp 0.0 Tamb(°C) 0.00 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Figure 3. Normalized avalanche power derating Figure 4. Normalized avalanche power derating versus pulse duration versus junction temperature PARM(tp) PARM(Tj) PARM(1 µs) PARM(25 °C) 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 Tj(°C) 0.001 tp(µs) 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 Figure 5. Non repetitive surge peak forward Figure 6. Relative variation of thermal current versus overload duration (maximum impedance junction to ambient versus pulse values) duration IM(A) Zth(j-a)/Rth(j-a) 11 1.0 10 0.9 9 0.8 8 0.7 7 Ta=25°C 0.6 6 0.5 5 Ta=50°C 0.4 4 0.3 3 2 IM Ta=100°C 0.2 Single pulse 1 δ=t0.5 t(s) 0.1 tp(s) 0 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 DocID024414 Rev 1 3/7

Characteristics STPS3L60U-Y Figure 7. Reverse leakage current versus Figure 8. Junction capacitance versus reverse reverse voltage applied voltage applied (typical values) (typical values) IR(mA) C(pF) 1.E+02 1000 F=1MHz Vosc=30mV Tj=25°C 1.E+01 Tj=125°C Tj=100°C 1.E+00 100 1.E-01 Tj=25°C 1.E-02 VR(V) VR(V) 1.E-03 10 0 5 10 15 20 25 30 35 40 45 50 55 60 1 10 100 Figure 9. Forward voltage drop versus forward Figure 10. Forward voltage drop versus forward current (high level) current (low level) IFM(A) IFM(A) 30 5 TTjj==110000°°CC 25 ((TTyyppiiccaallvvaalluueess)) 4 TTjj==110000°°CC ((TTyyppiiccaallvvaalluueess)) 20 ((MMaaxxTTiimmjj==uu11mm0000 vv°°aaCClluueess)) Tj=25°C 3 15 (Maximum values) ((MMaaxxTTiimmjj==uu11mm0000 vv°°aaCClluueess)) 2 10 Tj=25°C (Maximum values) 1 5 VFM(V) VFM(V) 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 11. Thermal resistance junction to ambient versus copper surface under each lead Rth(j-a)(°C/W) 120 Expoxy printed circuit FR4, SMB copper thickness = 35 µm 100 80 60 40 20 S(Cu)(cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4/7 DocID024414 Rev 1

STPS3L60U-Y Package information 2 Package information  Epoxy meets UL94,V0  Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 12. SMB dimension definitions E1 D E A1 C A2 L b Table 5. SMB dimension values Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.40 0.006 0.016 D 3.30 3.95 0.130 0.156 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 L 0.75 1.50 0.030 0.059 Figure 13. SMB footprint, dimensions in mm (inches) 1.62 2.60 1.62 (0.064) (0.102) (0.064) 2.18 (0.086) 5.84 (0.300) DocID024414 Rev 1 5/7

Ordering information STPS3L60U-Y 3 Ordering information Table 6. Ordering information Order codes Marking Package Weight Base qty Delivery mode STPS3L60UY G36Y SMB 0.107 g 2500 Tape and reel 4 Revision history Table 7. Document revision history Date Revision Changes 22-Mar-2013 1 Initial release. 6/7 DocID024414 Rev 1

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