STPS30M60C Power Schottky rectifier Features A1 ■ High current capability K A2 ■ Avalanche rated K K ■ Low forward voltage drop ■ High frequency operation A2 A2 Description K A1 A1 The STPS30M60C is a dual diode Schottky I2PAK D2PAK rectifier, suited for high frequency switch mode STPS30M60CR STPS30M60CG-TR power supply. K Packaged in TO-220AB, I2PAK and D2PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these A2 applications a good efficiency at both low and K high load. A1 TO-220AB T able 1. Device summary STPS30M60CT Symbol Value Figure 1. Electrical characteristics(a) I 2 x 15 A F(AV) V 60 V RRM I V VF (typ) 0.380 V "Forward" I Tj (max) 150 °C 2 x IO X IF IO X VRRM VAR VR V IR VTo VF(Io) VF VF(2xIo) "Reverse" IAR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure12. V and I are AR AR pulse measurements (t < 1 µs). V , I , V and V , p R R RRM F are static characteristics November 2011 Doc ID 022020 Rev 1 1/10 www.st.com 10

Characteristics STPS30M60C 1 Characteristics T able 2. Absolute ratings (limiting values, per diode, at T = 25 °C unless amb otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 60 A F(RMS) T = 135 °C Per diode 15 I Average forward current, δ= 0.5 c A F(AV) T = 135 °C Per device 30 c I Surge non repetitive forward current t = 10 ms sine-wave 400 A FSM p P (1) Repetitive peak avalanche power T = 25 °C, t = 1 µs 17600 W ARM j p Maximum repetitive peak V (2) t < 1 µs, T < 150 °C, I < 66 A 80 V ARM avalanche voltage p j AR Maximum single-pulse V (2) t < 1 µs, T < 150 °C, I < 66 A 80 V ARM peak avalanche voltage p j AR T Storage temperature range -65 to +175 °C stg T Maximum operating junction temperature(3) 150 °C j 1. For temperature or pulse time duration deratings, please refer to Figure4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure12 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth(j-a) T able 3. Thermal parameters Symbol Parameter Value Unit per diode 1.3 R Junction to case °C/W th(j-c) total 0.73 R Coupling 0.15 °C/W th(c) When the two diodes 1 and 2 are used simultaneously: ΔT(diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) 2/10 Doc ID 022020 Rev 1

STPS30M60C Characteristics Table 4. S tatic electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 °C - 20 80 µA I (1) Reverse leakage current j V = V R R RRM T = 125 °C - 15 50 mA j T = 25 °C - 0.475 0.515 j I = 7.5 A F T = 125 °C - 0.380 0.425 V (2) Forward voltage drop j V F T = 25 °C - 0.540 0.590 j I = 15 A F T = 125 °C - 0.470 0.530 j 1. Pulse test: t = 5 ms, δ < 2% p 2. Pulse test: t = 380 µs, δ < 2% p To evaluate the conduction losses use the following equation: P = 0.385 x I + 0.0097 x I 2 F(AV) F (RMS) Figure 2. Average forward power dissipation Figure 3. Average forward current versus versus average forward current ambient temperature (per diode) (δ = 0.5, per diode) P (W) I (A) 14 F(AV) 18 F(AV) 12 δ= 0.05 δ= 0.1 δ= 0.2 δ= 0.5 δ= 1 16 Rth(j-a)= Rth(j-c) 14 10 12 8 10 6 8 6 4 4 T 2 2 0 δ= tp/T tp IF(AV)(A) 0 Tamb(°C) 0 2 4 6 8 10 12 14 16 18 20 22 0 25 50 75 100 125 150 Figure 4. Normalized avalanche power Figure 5. Normalized avalanche power derating versus pulse duration derating versus junction temperature PARM(tp) PARM(Tj) P (1µs) P (25 °C) 1 ARM 1.2 ARM 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 tp(µs) 0 Tj(°C) 0.01 0.1 1 10 100 1000 25 50 75 100 125 150 Doc ID 022020 Rev 1 3/10

Characteristics STPS30M60C Figure 6. N on repetitive surge peak forward Figure 7. Relative thermal impedance current versus overload duration junction to case versus pulse (maximum values, per diode) duration 240 IM(A) 1.0 Zth(j-c)/Rth(j-c) 220 0.9 200 0.8 180 0.7 160 140 T = 25 °C 0.6 c 120 0.5 100 Tc= 75 °C 0.4 80 0.3 4600 IM Tc= 125 °C 0.2 Single pulse 20 t 0.1 δ= 0.5 t(s) t(s) 0 0.0 p 1.E-03 1.E-02 1.E-01 1.E+00 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 8. R everse leakage current versus Figure 9. Junction capacitance versus reverse voltage applied reverse voltage applied (typical values, per diode) (typical values, per diode) I (mA) C(pF) 1.E+02 R 10000 Tj= 150 °C F = 1 MHz V = 30 mV osc RMS 1.E+01 Tj= 125 °C Tj= 25 °C T= 100 °C j 1.E+00 T= 75 °C 1000 j 1.E-01 T= 50 °C j 1.E-02 Tj= 25 °C V (V) V (V) 1.E-03 R 100 R 0 10 20 30 40 50 60 1 10 100 Figure 10. F orward voltage drop versus Figure 11. Thermal resistance junction to forward current (per diode) ambient versus copper surface under tab 1000.0IFM(A) 80 Rth(j-a)(°C/W) epoxy printed board copper thickness = 35 µm 70 T= 125 °C 100.0 (Maxjimum values) 60 D2PAK T= 125 °C 50 j (Typical values) 10.0 40 T= 25 °C j (Maximum values) 30 1.0 20 10 V (V) S (cm2) 0.1 FM 0 Cu 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 30 35 40 4/10 Doc ID 022020 Rev 1

STPS30M60C Characteristics Figure 12. Reverse safe operating area (t < 1 µs and T < 150 °C) p j I (A) arm 70.0 I (V ) 150 °C,1µs arm arm 65.0 60.0 55.0 50.0 45.0 V (V) 40.0 arm 80 85 90 95 100 105 110 115 120 Doc ID 022020 Rev 1 5/10

Package information STPS30M60C 2 Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. T able 5. TO-220AB dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 H2 A D 2.40 2.72 0.094 0.107 Dia C E 0.49 0.70 0.019 0.027 L5 L7 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 L6 F2 1.14 1.70 0.044 0.066 L2 F2 G 4.95 5.15 0.194 0.202 F1 L9 D G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L4 F L2 16.4 Typ. 0.645 Typ. M L4 13 14 0.511 0.551 G1 E L5 2.65 2.95 0.104 0.116 G L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 Typ. 0.102 Typ. Dia. 3.75 3.85 0.147 0.151 6/10 Doc ID 022020 Rev 1

STPS30M60C Package information T able 6. D2PAK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A A1 2.49 2.69 0.098 0.106 E C2 L2 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 D B2 1.14 1.70 0.045 0.067 L C 0.45 0.60 0.017 0.024 L3 A1 C2 1.23 1.36 0.048 0.054 B2 C R D 8.95 9.35 0.352 0.368 B E 10.00 10.40 0.393 0.409 G G 4.88 5.28 0.192 0.208 A2 L 15.00 15.85 0.590 0.624 M * L2 1.27 1.40 0.050 0.055 V2 L3 1.40 1.75 0.055 0.069 * FLAT ZONE NO LESSTHAN 2mm M 2.40 3.20 0.094 0.126 R 0.40 typ. 0.016 typ. V2 0° 8° 0° 8° Figure 13. D2PAK footprint (dimensions in mm) 16.90 10.30 5.08 1.30 3.70 8.90 Doc ID 022020 Rev 1 7/10

Package information STPS30M60C T able 7. I2PAK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A A 4.40 4.60 0.173 0.181 E c2 A1 2.40 2.72 0.094 0.107 L2 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.044 0.067 D c 0.49 0.70 0.019 0.028 L1 A1 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 b1 L e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 b c E 10 10.40 0.394 0.409 e e1 L 13 14 0.512 0.551 L1 3.50 3.93 0.138 0.155 L2 1.27 1.40 0.050 0.055 8/10 Doc ID 022020 Rev 1

STPS30M60C Ordering information 3 Ordering information T able 8. Ordering information Order code Marking Package Weight Base qty Delivery mode STPS30M60CT STPS30M60CT TO-220AB 2.20 g 50 Tube STPS30M60CR STPS30M60CR I2PAK 1.49 g 50 Tube STPS30M60CG-TR STPS30M60CG D2PAK 1.48 g 1000 Tape and reel 4 Revision history T able 9. Revision history Date Revision Changes 02-Nov-2011 1 First issue. Doc ID 022020 Rev 1 9/10

STPS30M60C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 Doc ID 022020 Rev 1