图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: STPS30L120CT
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

STPS30L120CT产品简介:

ICGOO电子元器件商城为您提供STPS30L120CT由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STPS30L120CT价格参考。STMicroelectronicsSTPS30L120CT封装/规格:二极管 - 整流器 - 阵列, Diode Array 1 对共阴极 肖特基 120V 15A 通孔 TO-220-3。您可以下载STPS30L120CT参考资料、Datasheet数据手册功能说明书,资料中有STPS30L120CT 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 120V 15A TO220AB

产品分类

二极管,整流器 - 阵列

品牌

STMicroelectronics

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

STPS30L120CT

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同If时的电压-正向(Vf)

880mV @ 15A

不同 Vr时的电流-反向漏电流

200µA @ 120V

二极管类型

肖特基

二极管配置

1 对共阴极

供应商器件封装

TO-220AB

其它名称

497-12655-5
STPS30L120CT-ND

其它有关文件

http://www.st.com/web/catalog/sense_power/FM64/CL1571/SC541/SS1617/PF215803?referrer=70071840

包装

管件

反向恢复时间(trr)

-

安装类型

通孔

封装/外壳

TO-220-3

标准包装

50

热阻

0.7°C/W Jc

电压-DC反向(Vr)(最大值)

120V

电流-平均整流(Io)(每二极管)

15A

速度

快速恢复 =< 500 ns,> 200mA(Io)

推荐商品

型号:MBR1050CT

品牌:Diodes Incorporated

产品名称:分立半导体产品

获取报价

型号:FERD40U45CG-TR

品牌:STMicroelectronics

产品名称:分立半导体产品

获取报价

型号:MBR50060CT

品牌:GeneSiC Semiconductor

产品名称:分立半导体产品

获取报价

型号:ISL9K30120G3

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

型号:40CPQ045

品牌:Vishay Semiconductor Diodes Division

产品名称:分立半导体产品

获取报价

型号:SBR4040CTFP

品牌:Diodes Incorporated

产品名称:分立半导体产品

获取报价

型号:MMBD1505A_D87Z

品牌:ON Semiconductor

产品名称:分立半导体产品

获取报价

型号:MBRB30H100CT-E3/45

品牌:Vishay Semiconductor Diodes Division

产品名称:分立半导体产品

获取报价

样品试用

万种样品免费试用

去申请
STPS30L120CT 相关产品

BAV70DW-7

品牌:Diodes Incorporated

价格:

GSD2004A-E3-08

品牌:Vishay Semiconductor Diodes Division

价格:

STTH2002CR

品牌:STMicroelectronics

价格:

NTSB40200CTG

品牌:ON Semiconductor

价格:

STTH806TTI

品牌:STMicroelectronics

价格:

BAT54AWT3G

品牌:ON Semiconductor

价格:

BAS70-04LT1G

品牌:ON Semiconductor

价格:

STTH9012TV2

品牌:STMicroelectronics

价格:

PDF Datasheet 数据手册内容提取

STPS30L120C Datasheet 120 V power Schottky rectifier Features A1 K • High junction temperature capability A2 • Avalanche capability specified K • Low forward voltage drop current • High frequency operation A2 A2 K • Insulated package: TO-220FPAB K A1 A1 TO-220AB TO-220FPAB – Insulating voltage = 1500 VRMS • ECOPACK®2 compliant K Applications A2 K • Switching diode I²PAK A1 • SMPS • DC/DC converter • LED lighting • Notebook adapter Description This dual center tap Schottky rectifier is optimized for high frequency switch mode power supplies. Packaged in TO-220AB, I2PAK and TO-220FPAB, the STPS30L120C provides Product status link adaptor designers with an optimized price-performance ratio. STPS30L120C Product summary Symbol Value IF(AV) 2 x 15A VRRM 120 V Tj (max.) 150 °C VF (typ.) 0.65 V DS6493 - Rev 4 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.

STPS30L120C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 120 V IF(RMS) Forward rms current 30 A Per diode 15 A IF(AV) Average forward current, δ = 0.5 square wave Per device 30 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 220 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 828 W Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature(1) 150 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Value Unit Per diode 1.3 TO-220AB, I²PAK Total 0.7 Rth(j-c) Junction to case Per diode 4.5 TO-220FPAB °C/W Total 3.8 TO-220AB, I²PAK 0.1 Rth(c) Coupling TO-220FPAB 3 When the diodes 1 and 2 are used simultaneously: T(diode 1) = P(diode 1) x R (per diode) + P(diode 2) x R j th(j-c) th(c) For more information, please refer to the following application note: • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 °C - 200 µA IR(1) Reverse leakage current VR = VRRM Tj = 125 °C - 12 35 mA Tj = 25 °C - 0.675 IF = 5 A Tj = 125 °C - 0.51 0.57 Tj = 25 °C - 0.88 VF(2) Forward voltage drop IF = 15 A V Tj = 125 °C - 0.65 0.71 Tj = 25 °C - 1.08 IF = 30 A Tj = 125 °C - 0.755 0.84 1. Pulse test: tp = 5 ms, δ < 2% DS6493 - Rev 4 page 2/14

STPS30L120C Characteristics 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.58 x I + 0.0087 x I 2 F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS6493 - Rev 4 page 3/14

STPS30L120C Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus Figure 2. Average forward current versus ambient average forward current (per diode) temperature (δ = 0.5, per diode) 14 PF(AV)(W) 18 IF(AV)(A) δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 12 16 Rth(j-a) = Rth(j-c) δ = 0.05 14 10 12 TO-220AB 8 10 6 8 TO-220FPAB 6 4 T 4 T Rth(j-a) = 15°C/W 2 2 0 IF(AV)(A) δ=tp/T tp 0 δ=tp/T tp Tamb(°C) 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance junction Figure 3. Normalized avalanche power derating versus to case versus pulse duration (TO-220AB, I²PAK) pulse duration (T = 125 °C) j PPAR(1M0(t pµ)s) 1.0 Zth(j-c)/Rth(j-c) 1 ARM 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.01 0.3 0.2 0.1 Single pulse tP(s) tp(µs) 0.0 0.001 1.E-03 1.E-02 1.E-01 1.E+00 1 10 100 1000 DS6493 - Rev 4 page 4/14

STPS30L120C Characteristics (curves) Figure 6. Reverse leakage current versus reverse voltage Figure 5. Relative variation of thermal impedance junction applied (typical values, per diode) to case versus pulse duration (TO-220FPAB) Zth /Rth (j-c) (j-c) 1.0 I (mA) 1.E+02 R 0.9 0.8 1.E+01 Tj= 150 °C 0.7 Tj= 125 °C 0.6 1.E+00 0.5 Tj= 100 °C 0.4 1.E-01 Tj= 75 °C 0.3 Tj= 50 °C 0.2 1.E-02 0.1 Tj= 25 °C Single pulse tP(s) 0.0 VR(V) 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-03 0 10 20 30 40 50 60 70 80 90 100 110 120 Figure 7. Junction capacitance versus reverse voltage Figure 8. Forward voltage drop versus forward current applied (typical values, per diode) (per diode) 1000 C(pF) 200 IF(A) F = 1 MHz VOSTC j== 3205 m°CVRMS 180 160 140 (MaTxijm= u1m25 v °aClues) 120 100 80 (TyTpji=c a1l2v5a l°uCes) 60 40 (MaxTimj=u 2m5 v°aClues) 20 VR(V) VF(V) 100 0 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 DS6493 - Rev 4 page 5/14

STPS30L120C Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 TO-220AB package information • Epoxy meets UL 94,V0 • Cooling method: by conduction (C) • Recommended torque value: 0.55 N·m • Maximum torque value: 0.70 N·m Figure 9. TO-220AB package outline DS6493 - Rev 4 page 6/14

STPS30L120C TO-220AB package information Table 4. TO-220AB package mechanical data Dimensions Ref. Millimeters Inches (for reference only) Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.240 0.035 b1 1.14 1.55 0.045 0.061 c 0.48 0.70 0.019 0.028 D 15.25 15.75 0.600 0.620 D1 1.27 typ. 0.050 typ. E 10.00 10.40 0.394 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.260 J1 2.40 2.72 0.094 0.107 L 13.00 14.00 0.512 0.551 L1 3.50 3.93 0.138 0.155 L20 16.40 typ. 0.646 typ. L30 28.90 typ. 1.138 typ. θP 3.75 3.85 0.148 0.152 Q 2.65 2.95 0.104 0.116 DS6493 - Rev 4 page 7/14

STPS30L120C TO-220FPAB package information 2.2 TO-220FPAB package information • Epoxy meets UL 94,V0 • Cooling method: by conduction (C) • Recommended torque value: 0.55 N·m • Maximum torque value: 0.70 N·m Figure 10. TO-220FPAB package outline DS6493 - Rev 4 page 8/14

STPS30L120C TO-220FPAB package information Table 5. TO-220FPAB package mechanical data Dimensions Ref. Millimeters Inches (for reference only) Min. Max. Min. Max. A 4.40 4.60 0.1739 0.1818 B 2.50 2.70 0.0988 0.1067 D 2.50 2.75 0.0988 0.1087 E 0.45 0.70 0.0178 0.0277 F 0.75 1.00 0.0296 0.0395 F1 1.15 1.70 0.0455 0.0672 F2 1.15 1.70 0.0455 0.0672 G 4.95 5.20 0.1957 0.2055 G1 2.40 2.70 0.0949 0.1067 H 10.00 10.40 0.3953 0.4111 L2 16.00 typ. 0.6324 typ. L3 28.60 30.60 1.1304 1.2095 L4 9.80 10.60 0.3874 0.4190 L5 2.90 3.60 0.1146 0.1423 L6 15.90 16.40 0.6285 0.6482 L7 9.00 9.30 0.3557 0.3676 Dia 3.00 3.20 0.1186 0.1265 DS6493 - Rev 4 page 9/14

STPS30L120C I²PAK package information 2.3 I²PAK package information • Epoxy meets UL 94,V0 • Cooling method: by conduction (C) Figure 11. I²PAK package outline DS6493 - Rev 4 page 10/14

STPS30L120C I²PAK package information Table 6. I²PAK package mechanical data Dimensions Ref. Millimeters Inches (for reference only) Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.044 0.067 c 0.49 0.70 0.019 0.028 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 E 10.00 10.40 0.394 0.409 L 13.00 14.00 0.512 0.551 L1 3.50 3.93 0.138 0.155 L2 1.27 1.40 0.050 0.055 DS6493 - Rev 4 page 11/14

STPS30L120C Ordering Information 3 Ordering Information Table 7. Ordering information Order code Marking Package Weight Base qty. Delivery mode STPS30L120CT STPS30L120CT TO-220AB 1.95 g 50 STPS30L120CFP STPS30L120CFP TO-220FPAB 1.90 g 50 Tube STPS30L120CR STPS30L120CR I²PAK 1.50 g 50 DS6493 - Rev 4 page 12/14

STPS30L120C Revision history Table 8. Document revision history Date Version Changes 28-Sep-2009 1 First issue. 17-Feb-2010 2 Updated Table 2. Added Figure 1 and Figure 13. 26-May-2011 3 Added I2PAK package. Removed figure 5, figure 6, figure 7, figure 13. Updated Figure 3. Normalized avalanche power derating versus pulse 03-Jul-2018 4 duration (Tj = 125 °C) and Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, per diode). Minor text changes to improve readability. DS6493 - Rev 4 page 13/14

STPS30L120C IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS6493 - Rev 4 page 14/14

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: STPS30L120CR STPS30L120CFP STPS30L120CT