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STPS3030CR产品简介:
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参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 30V 15A I2PAK肖特基二极管与整流器 LD PWR SCHOT |
产品分类 | 二极管,整流器 - 阵列分离式半导体 |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,肖特基二极管与整流器,STMicroelectronics STPS3030CR- |
数据手册 | |
产品型号 | STPS3030CR |
不同If时的电压-正向(Vf) | 490mV @ 15A |
不同 Vr时的电流-反向漏电流 | 1mA @ 30V |
二极管类型 | |
二极管配置 | 1 对共阴极 |
产品 | Schottky Rectifiers |
产品种类 | 肖特基二极管与整流器 |
供应商器件封装 | I2PAK |
其它名称 | 497-12648-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM64/CL1571/SC541/SS1618/PF64878?referrer=70071840 |
包装 | 管件 |
反向恢复时间(trr) | - |
商标 | STMicroelectronics |
安装类型 | 通孔 |
安装风格 | SMD/SMT |
封装 | Tube |
封装/外壳 | TO-262-3,长引线,I²Pak,TO-262AA |
封装/箱体 | I2PAK |
峰值反向电压 | 30 V |
工作温度范围 | + 150 C |
工厂包装数量 | 50 |
技术 | Silicon |
最大反向漏泄电流 | 1000 uA |
最大工作温度 | + 150 C |
最大浪涌电流 | 250 A |
最小工作温度 | - 65 C |
标准包装 | 50 |
正向电压下降 | 0.58 V |
正向连续电流 | 30 A |
热阻 | 0.8°C/W Jc |
电压-DC反向(Vr)(最大值) | 30V |
电流-平均整流(Io)(每二极管) | 15A |
系列 | STPS3030C |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Dual Common Cathode |
STPS3030/CT/CG/CR Low drop power Schottky rectifier Main product characteristics A1 I 2 x 15 A K F(AV) VRRM 30 V A2 T (max) 150° C j K V (max) 0.42 V F Features and benefits ■ Very small conduction losses A2 A2 ■ Negligible switching losses A1 A1K ■ Extremely fast switching D2PAK TO-220AB ■ Low forward voltage drop for higher efficiency STPS3030CG STPS3030CT ■ Low thermal resistance ■ Avalanche capability specified Description Dual Schottky rectifier suited for switch mode A2 power supply and high frequency DC to DC K converters. A1 I2PAK Packaged in TO-220AB, D2PAK and I2PAK, this STPS3030CR device is intended for use in low voltage high frequency inverters, free-wheeling and polarity j protection applications. October 2006 Rev 4 1/9 www.st.com 9
Characteristics STPS3030CT/CG/CR 1 Characteristics T able 1. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I RMS forward current 30 A F(RMS) T = 135° C Per diode 15 c I Average forward current A F(AV) δ = 0.5 Per device 30 I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p I Peak repetitive reverse current t = 2 µs square F= 1 kHz 1 A RRM p I Non repetitive peak reverse current t = 100 µs square 3 A RSM p P Repetitive peak avalanche power t = 1 µs T = 25° C 4100 W ARM p j T Storage temperature range -65 to + 150 °C stg T Maximum operating junction temperature (1) 150 °C j dV/dt Critical rate of rise of reverse voltage (rated V , T = 25° C) 10000 V/µs R j 1. d----dP----T-t--o-j---t<R-----t--h----(-1--j--–-----a----)- condition to avoid thermal runaway for a diode on its own heatsink T able 2. Thermal resistance Symbol Parameter Value Unit Per diode 1.2 R Junction to case TO-220AB - D2PAK - I2PAK th(j-c) Total 0.8 °C/W R Coupling 0.4 th(c) T able 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25° C 0.23 1.0 I (1) Reverse leakage current j V = V mA R R RRM T = 125° C 125 180 j T = 25° C I = 15 A 0.44 0.49 j F T = 125° C I = 15 A 0.36 0.40 V (1) Forward voltage drop j F V F T = 25° C I = 30 A 0.53 0.58 j F T = 125° C I = 30 A 0.49 0.53 j F 1. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.26 x I + 0.0107 I 2 F(AV) F (RMS) 2/9
STPS3030CT/CG/CR Characteristics Figure 1. C onduction losses versus average Figure 2. Average forward current versus current ambient temperature (δ = 0.5) P(W) IF(av)(A) 10 18 δ= 0.1 δ= 0.2 δ= 0.5 9 δ= 0.05 16 Rth(j-a)=Rth(j-c) 8 14 7 δ= 1 12 6 10 5 8 4 6 Rth(j-a)=50°C/W 3 2 T 4 1 IF(av)(A) δ=tp/T tp 2 Tamb(°C) 0 0 0 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150 Figure 3. N ormalized avalanche power Figure 4. Normalized avalanche power derating versus pulse duration derating versus junction temperature PARM(tp) PARM(tp) PARM(1µs) PARM(25°C) 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 tp(µs) Tj(°C) 0.001 0 0.01 0.1 1 10 100 1000 0 25 50 75 100 125 150 Figure 5. N on repetitive surge peak forward Figure 6. Relative variation of thermal current versus overload duration impedance junction to case versus (maximum values) pulse duration IM(A) Zth(j-c)/Rth(j-c) 250 1.0 225 0.9 200 0.8 175 0.7 150 0.6 δ= 0.5 125 TC=25°C 0.5 100 TC=75°C 0.4 δ= 0.2 75 0.3 δ= 0.1 50 TC=125°C 0.2 T Single pulse 25 t(s) 0.1 tp(s) δ=tp/T tp 0 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 3/9
Characteristics STPS3030CT/CG/CR Figure 7. R everse leakage current versus Figure 8. Junction capacitance versus reverse voltage applied (typical reverse voltage applied (typical values) values) IR(mA) C(nF) 1.E+03 10.0 1.E+02 Tj=150°C VFoTs=jc==123M50°HmCzV Tj=125°C 1.E+01 Tj=100°C Tj=75°C 1.0 1.E+00 Tj=50°C 1.E-01 Tj=25°C VR(V) VR(V) 1.E-02 0.1 0 5 10 15 20 25 30 1 10 100 Figure 9. F orward voltage drop versus Figure 10. Thermal resistance junction to forward current ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35 µm) IFM(A) Rth(j-a)(°C/W) 100 80 D²PAK 70 ((MMaaxxTTiimmjj==uu11mm2255 vv°°aaCClluueess)) 60 ((TTyyppTTiijjcc==aa11ll22vv55aa°°llCCuueess)) 50 10 (MaxiTmj=u2m5 °vCalues) 40 30 20 VFM(V) 10 S(cm²) 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 35 40 4/9
STPS3030CT/CG/CR Package information 2 Package information ● Epoxy meets UL94,V0 ● Cooling method: C ● Recommended torque value: 0.55 Nm ● Maximum torque value: 0.70 Nm T able 4. I2PAK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A A 4.40 4.60 0.173 0.181 E c2 A1 2.40 2.72 0.094 0.107 L2 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.044 0.067 D c 0.49 0.70 0.019 0.028 c2 1.23 1.32 0.048 0.052 L1 A1 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 b1 L e1 4.95 5.15 0.195 0.203 E 10 10.40 0.394 0.409 b c L 13 14 0.512 0.551 e L1 3.50 3.93 0.138 0.155 e1 L2 1.27 1.40 0.050 0.055 5/9
Package information STPS3030CT/CG/CR Table 5. D2PAK dimensions Dimensions Ref Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A A1 2.49 2.69 0.098 0.106 E C2 L2 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 D L B2 1.14 1.70 0.045 0.067 L3 C 0.45 0.60 0.017 0.024 A1 C2 1.23 1.36 0.048 0.054 B2 C R B D 8.95 9.35 0.352 0.368 G E 10.00 10.40 0.393 0.409 A2 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 M * L2 1.27 1.40 0.050 0.055 V2 L3 1.40 1.75 0.055 0.069 * FLAT ZONE NO LESSTHAN 2mm M 2.40 3.20 0.094 0.126 R 0.40 typ. 0.016 typ. V2 0° 8° 0° 8° Figure 11. Footprint (dimensions in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 6/9
STPS3030CT/CG/CR Package information T able 6. TO-220AB dimensions Dimensions Ref Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 H2 A Dia C E 0.49 0.70 0.019 0.027 L5 F 0.61 0.88 0.024 0.034 L7 F1 1.14 1.70 0.044 0.066 L6 F2 1.14 1.70 0.044 0.066 L2 F2 G 4.95 5.15 0.194 0.202 F1 L9 D G1 2.40 2.70 0.094 0.106 L4 H2 10 10.40 0.393 0.409 F M L2 16.4 typ. 0.645 typ. G1 E L4 13 14 0.511 0.551 G L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. Diam 3.75 3.85 0.147 0.151 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9
Ordering information STPS3030CT/CG/CR 3 Ordering information Delivery Ordering type Marking Package Weight Base qty mode STPS3030CT STPS3030CT TO-220AB 2.2 g 50 Tube STPS3030CG STPS3030CG D2PAK 1.48 g 50 Tube STPS3030CG-TR STPS3030CG D2PAK 1.48 g 1000 Tape and reel STPS3030CR STPS3030CR I2PAK 1.49 g 50 Tube 4 Revision history Date Revision Changes Jul-2006 3A Initial release. Reformatted to current standards. Corrected dimensions for I2PAK in 16-Oct-2006 4 Table 4 8/9
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