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STPS2H100UY产品简介:
ICGOO电子元器件商城为您提供STPS2H100UY由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STPS2H100UY价格参考。STMicroelectronicsSTPS2H100UY封装/规格:二极管 - 整流器 - 单, 肖特基 表面贴装 二极管 100V 2A SMB。您可以下载STPS2H100UY参考资料、Datasheet数据手册功能说明书,资料中有STPS2H100UY 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 100V 2A SMB肖特基二极管与整流器 Automotive High PWR Schottky 100V Vrrm |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,肖特基二极管与整流器,STMicroelectronics STPS2H100UYQ 汽车 |
数据手册 | |
产品型号 | STPS2H100UY |
不同If时的电压-正向(Vf) | 790mV @ 2A |
不同 Vr、F时的电容 | - |
不同 Vr时的电流-反向漏电流 | 1µA @ 100V |
二极管类型 | |
产品 | Schottky Rectifiers |
产品培训模块 | http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26067 |
产品种类 | 肖特基二极管与整流器 |
供应商器件封装 | SMB |
其它名称 | 497-11093-1 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM64/CL1778/SC1460/PF250574?referrer=70071840 |
包装 | 剪切带 (CT) |
反向恢复时间(trr) | - |
商标 | STMicroelectronics |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | DO-214AA,SMB |
封装/箱体 | SMB |
峰值反向电压 | 100 V |
工作温度-结 | -40°C ~ 175°C |
工作温度范围 | - 40 C to + 150 C |
工厂包装数量 | 2500 |
技术 | Silicon |
最大反向漏泄电流 | 1 uA |
最大工作温度 | + 150 C |
最大浪涌电流 | 75 A |
最小工作温度 | - 40 C |
标准包装 | 1 |
正向电压下降 | 0.79 V |
正向连续电流 | 2 A |
热阻 | 25°C/W Jl |
特色产品 | http://www.digikey.cn/product-highlights/cn/zh/stmicroelectronics-automotive-grade-rectifiers/2876 |
电压-DC反向(Vr)(最大值) | 100V |
电流-平均整流(Io) | 2A |
系列 | STPS2H100-Y |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Single |
STPS2H100RL Datasheet 100 V power Schottky rectifier Features A • Negligible switching losses • High junction temperature capability • Low leakage current • Good trade-off between leakage current and forward voltage drop • Avalanche capability specified DO-41 • ECOPACK®2 compliant K Description The STPS2H100RL is an axial power Schottky rectifier ideal for switch mode power supply and high frequency DC/DC converters. Packaged in DO-41, this device is optimized for use in low voltage, high frequency inverters and small battery chargers. Product status link STPS2H100RL Product summary Symbol Value IF(AV) 2 A VRRM 100 V Tj (max.) 175 °C VF (max.) 0.70 V DS2999 - Rev 5 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.
STPS2H100RL Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(AV) Average forward current TL = 120 °C, δ = 0.5 2 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 50 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 108 W Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature(1) 175 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit Rth(j-a) Junction to ambient 100 Lead length = 10 mm °C/W Rth(j-l) Junction to lead 35 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 °C - 1 µA IR(1) Reverse leakage current VR = VRRM Tj = 125 °C - 0.2 0.5 mA Tj = 25 °C - 0.86 IF = 2 A Tj = 125 °C - 0.65 0.70 VF(2) Forward voltage drop V Tj = 25 °C - 0.92 IF = 4 A Tj = 125 °C - 0.72 0.78 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.62 x I + 0.04 x I 2 F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode. DS2999 - Rev 5 page 2/8
STPS2H100RL Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus Figure 2. Average forward current versus ambient average forward current temperature (δ = 0.5) PF(AV)(W) IF(AV)(A) 1.7 2.2 1.6 δ= 0.1 δ= 0.2 δ= 0.5 Rth(j-a)=Rth(j-I) 2.0 1.5 δ= 0.05 1.4 1.8 1.3 1.6 1.2 1.1 δ= 1 1.4 1.0 0.9 1.2 Rth(j-a)=100°C/W 0.8 1.0 0.7 0.6 0.8 00..45 T 0.6 T 0.3 0.4 00..12 IF(AV)(A) δ=tp/T tp 0.2 δ=tp/T tp Tamb(°C) 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 25 50 75 100 125 150 175 Figure 4. Relative variation of thermal impedance junction Figure 3. Normalized avalanche power derating versus to ambient versus pulse duration junction temperature (T = 125 °C) j PARM(tp) Zth(j-a)/Rth(j-a) P (10 µs) 1.0 1 ARM 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.01 0.3 0.2 tp(µs) 0.1 Single pulse tp(s) 0.001 0.0 1 10 100 1000 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 DS2999 - Rev 5 page 3/8
STPS2H100RL Characteristics (curves) Figure 5. Reverse leakage current versus reverse voltage Figure 6. Junction capacitance versus reverse voltage applied (typical values) applied (typical values) IR(µA) C(pF) 1.E+03 100 Tj=150°C F = 1MHz VOSC = 30mV 1.E+02 Tj=125°C Tj = 25 °C Tj=100°C 1.E+01 Tj=75°C 1.E+00 Tj=50°C 1.E-01 Tj=25°C VR(V) VR(V) 1.E-02 10 0 20 40 60 80 100 1 10 100 Figure 7. Forward voltage drop versus forward current Figure 8. Forward voltage drop versus forward current (low level) (high level) IF(A) IF(A) 2.0 100 1.8 1.6 (maxTimj=u1m25 v°aClues) (maxTimj=u1m25 v°aClues) 1.4 11..02 (typTijc=a1l2 v5a°lCues) 10 (typTijc=a1l2 v5a°lCues) (maxiTmj=u2m5 °vCalues) 0.8 Tj=25°C 0.6 (maximum values) 0.4 0.2 VF(V) VF(V) 0.0 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Figure 9. Thermal resistance versus lead length Rth(°C/W) 120 Rth(j-a) 100 80 60 Rth(j-I) 40 20 Lleads(mm) 0 5 10 15 20 25 DS2999 - Rev 5 page 4/8
STPS2H100RL Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 DO-41 package information • Epoxy meets UL94, V0 • Band indicates cathode Figure 10. DO-41 package outline C A C ØB ØD ØD Table 4. DO-41 package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.07 5.20 0.160 0.205 ØB 2.04 2.71 0.080 0.107 C 25.40 1 ØD 0.71 0.86 0.028 0.034 DS2999 - Rev 5 page 5/8
STPS2H100RL Ordering Information 3 Ordering Information Table 5. Ordering information Order code Marking Package Weight Base qty. Delivery mode STPS2H100 STPS2H100 2000 Ammopack DO-41 0.34 g STPS2H100RL Cathode ring 5000 Tape and reel DS2999 - Rev 5 page 6/8
STPS2H100RL Revision history Table 6. Document revision history Date Version Changes Jul-2003 2A Initial release. 23-Jun-2009 3 Updated dimension C in table 5. 05-Oct-2009 4 Updated table 5 package dimensions. Removed figure 4 and figure 5. Updated Figure 3. Normalized avalanche power derating versus junction 17-May-2018 5 temperature (Tj = 125 °C) and Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified). Minor text changes to improve readability. DS2999 - Rev 5 page 7/8
STPS2H100RL IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS2999 - Rev 5 page 8/8
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