STPS1L30MF Low drop power Schottky rectifier in flat package Main product characteristics A I 1 A F(AV) V 30 V RRM K T (max) 150° C j VF (max) 0.39 V STmite flat (DO222-AA) Features and benefits ■ Very low profile package: 0.85 mm Description ■ Backward compatible with standard STmite Single Schottky rectifier suited for switch mode footprint power supplies and high frequency DC to DC ■ Very small conduction losses converters. ■ Negligible switching losses Packaged in STmite flat, this device is intended ■ Extremely fast switching for use in very low voltage, high frequency ■ Low forward voltage drop for higher efficiency inverters, free wheeling and polarity protection and extended battery life applications. Due to the very small size of the package this device fits battery powered ■ Low thermal resistance equipment (cellular, notebook, PDA’s, printers) as ■ Avalanche capability specified well as chargers and PCMCIA cards. Order Code Part number Marking STPS1L30MF F1L3 T able 1. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I RMS forward voltage 2 A F(RMS) I Average forward current T = 140° C δ = 0.5 1 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 50 A FSM p P Repetitive peak avalanche power t = 1 µs T = 25° C 1200 W ARM p j T Storage temperature range -65 to + 150 °C stg T Maximum operating junction temperature(1) 150 °C j dV/dt Critical rate of rise of reverse voltage (rated V , T = 25° C) 10000 V/µs R j 1. d----dP---T--t--o-j---t<R-----t--h----(-1--j--–-----a-----) condition to avoid thermal runaway for a diode on its own heatsink August 2006 Rev 1 1/7 www.st.com

Characteristics STPS1L30MF 1 Characteristics T able 2. Thermal resistance Symbol Parameter Value Unit R Junction to case 20 °C/W th(j-c) R (1) Junction to ambient 250 °C/W th(j-a) 1. Mounted with minimum recommended pad size, PC board FR4 T able 3. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ Max. Unit T = 25° C 0.13 0.39 j V = V R RRM T = 85° C 5.25 16.5 j T = 25° C 0.05 0.24 I (1) Reverse leakage current j V = 20 V mA R R T = 85° C 3.5 10.5 j T = 25° C 0.03 0.15 j V = 10 V R T = 85° C 2.4 7 j T = 25° C 0.33 0.39 j I = 1 A F T = 85° C 0.28 0.34 j T = 25° C 0.39 0.45 j I = 2 A F T = 85° C 0.36 0.42 V (1) Forward voltage drop j V F T = 25° C 0.45 0.53 j I = 3 A F T = 85° C 0.43 0.51 j T = 25° C 0.50 0.60 j I = 4 A F T = 85° C 0.50 0.60 j 1. Pulse test: = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.26 x I + 0.08 I 2 F(AV) F (RMS) 2/7

STPS1L30MF Characteristics Figure 1. C onduction losses versus average Figure 2. Average forward current versus current ambient temperature (δ = 0.5) PF(AV)(W) IF(AV)(A) 0.50 1.1 0.45 δ= 0.05 δ= 0.1 δ= 0.2 δ= 0.5 1.0 Rth(j-a)=Rth(j-c) 0.40 0.9 δ= 1 0.8 0.35 0.7 0.30 0.6 Rth(j-a)=270°C/W 0.25 0.5 0.20 0.4 0.15 0.3 T 0.10 0.2 0.05 IF(AV)(A) δ=tp/T tp 0.1 Tamb(°C) 0.00 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 25 50 75 100 125 150 Figure 3. N ormalized avalanche power Figure 4. Normalized avalanche power derating versus pulse duration derating versus junction temperature PARM(tp) PARM(tp) PARM(1µs) PARM(25°C) 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 tp(µs) 0 Tj(°C) 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 Figure 5. N on repetitive surge peak forward Figure 6. Relative variation of thermal current versus overload duration impedance junction to case versus (maximum values) pulse duration IM(A) Zth(j-c)/Rth(j-c) 22 1.0 20 0.9 18 0.8 16 0.7 14 12 TC=25°C 00..56 δ= 0.5 10 8 TC=75°C 0.4 6 0.3 δ= 0.2 4 IM TC=125°C 0.2 δ= 0.1 T 2 δ=t0.5 t(s) 0.1 Single pulse tp(s) δ=tp/T tp 0 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E-04 1.E-03 1.E-02 1.E-01 3/7

Characteristics STPS1L30MF Figure 7. R everse leakage currrent versus Figure 8. Reverse leakage currrent versus reverse voltage applied (typical junction temperature (typical values) values) IR(mA) IR(mA) 1.E+03 1.E+03 Tj=150°C VR=30V 1.E+02 Tj=125°C 1.E+02 1.E+01 Tj=100°C 1.E+01 Tj=75°C 1.E+00 Tj=50°C 1.E+00 1.E-01 Tj=25°C 1.E-01 VR(V) Tj(°C) 1.E-02 1.E-02 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 25 50 75 100 125 150 F igure 9. Junction capacitance versus Figure 10. Forward voltage drop versus reverse voltage applied (typical forward current values) C(pF) IFM(A) 1000 2.0 F=1MHz VOSC=30mVRMS 1.8 Tj=25°C 1.6 (maxiTmj=u8m5 °vCalues) 1.4 1.2 Tj=85°C (typical values) 100 1.0 0.8 0.6 Tj=25°C (maximum values) 0.4 VR(V) 0.2 VFM(V) 10 0.0 1 10 100 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 F igure 11. Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu=35 µm, typical values) Rth(j-a)(°C/W) 250 200 150 100 50 S(mm²) 0 0 20 40 60 80 100 120 140 160 180 200 4/7

STPS1L30MF Package information 2 Package information Table 4. STmite flat dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 0.80 0.85 0.95 0.031 0.033 0.037 L1 L L2 E1 b 0.40 0.55 0.65 0.016 0.022 0.026 b2 0.70 0.85 1.00 0.027 0.033 0.039 D b b2 c 0.10 0.15 0.25 0.004 0.006 0.009 L3 D 1.75 1.90 2.05 0.069 0.075 0.081 E E 3.60 3.80 3.90 0.142 0.150 0.154 c A E1 2.80 2.95 3.10 0.110 0.116 0.122 L 0.50 0.55 0.80 0.020 0.022 0.031 L1 2.10 2.40 2.60 0.083 0.094 0.102 L2 0.45 0.60 0.75 0.018 0.024 0.030 L3 0.20 0.35 0.50 0.008 0.014 0.020 Figure 12. STmite flat recommended footprint (all dimensions in mm) 0.85 0.63 2.00 0.65 0.65 0.95 1.95 4.13 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7

Ordering information STPS1L30MF 3 Ordering information Part number Marking Package Weight Base qty Delivery mode STPS1L30MF F1L3 STmite flat 16 mg 12000 Tape and reel 4 Revision history Date Revision Changes 21-Aug-2006 1 First issue. 6/7

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