ICGOO在线商城 > 分立半导体产品 > 二极管 - 整流器 - 单 > STPS15L25D
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STPS15L25D产品简介:
ICGOO电子元器件商城为您提供STPS15L25D由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STPS15L25D价格参考¥6.35-¥6.35。STMicroelectronicsSTPS15L25D封装/规格:二极管 - 整流器 - 单, 肖特基 通孔 二极管 25V 15A TO-220AC。您可以下载STPS15L25D参考资料、Datasheet数据手册功能说明书,资料中有STPS15L25D 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 25V 15A TO220AC肖特基二极管与整流器 15 Amp 25 Volt |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,肖特基二极管与整流器,STMicroelectronics STPS15L25D- |
数据手册 | |
产品型号 | STPS15L25D |
不同If时的电压-正向(Vf) | 460mV @ 15A |
不同 Vr、F时的电容 | - |
不同 Vr时的电流-反向漏电流 | 1.3mA @ 25V |
二极管类型 | |
产品 | Schottky Rectifiers |
产品种类 | 肖特基二极管与整流器 |
供应商器件封装 | TO-220AC |
其它名称 | 497-12059-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM64/CL1571/SC541/SS1617/PF64847?referrer=70071840 |
包装 | 管件 |
反向恢复时间(trr) | - |
商标 | STMicroelectronics |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-2 |
封装/箱体 | TO-220-2 |
峰值反向电压 | 25 V |
工作温度-结 | 150°C (最大) |
工作温度范围 | + 150 C |
工厂包装数量 | 50 |
技术 | Silicon |
最大反向漏泄电流 | 1300 uA |
最大工作温度 | + 150 C |
最大浪涌电流 | 250 A |
最小工作温度 | - 65 C |
标准包装 | 50 |
正向电压下降 | 0.56 V at 30 A |
正向连续电流 | 15 A |
热阻 | 1°C/W Jc |
电压-DC反向(Vr)(最大值) | 25V |
电流-平均整流(Io) | 15A |
系列 | STPS15L25 |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Single |
STPS15L25D/G ® LOW DROP POWER SCHOTTKY RECTIFIER MAINPRODUCTCHARACTERISTICS I 15A F(AV) V 25V RRM K Tj(max) 150°C V (max) 0.35V F A FEATURES A NC K VERY LOW FORWARD VOLTAGE DROP n FOR LESS POWER DISSIPATION AND RE- DUCEDHEATSINK OPTIMIZEDCONDUCTION/REVERSELOSSES n TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCYINTHEAPPLICATIONS TO-220AC D2PAK STPS15L25D STPS15L25G AVALANCHECAPABILITYSPECIFIED n DESCRIPTION SingleSchottkyrectifiersuitedforSwitchedMode Power Supplies and high frequency DC to DC converters(V ). RMS Packaged in TO-220AC or D2PAK, this device is especially intended for use as a Rectifier at the secondaryof3.3VSMPSandDC/DCunits. ABSOLUTERATINGS(limitingvalues) Symbol Parameter Value Unit V Repetitivepeakreversevoltage 25 V RRM I RMSforwardcurrent 30 A F(RMS) I Averageforwardcurrent Tc=145°C d =0.5 15 A F(AV) I Surgenonrepetitiveforwardcurrent tp=10msSinusoidal 250 A FSM I Repetitivepeakreversecurrent tp=2µssquare F=1kHz 1 A RRM I Nonrepetitivepeakreversecurrent tp=100µssquare 4 A RSM P Repetitivepeakavalanchepower tp=1µs Tj=25°C 9000 W ARM T Storagetemperaturerange -65to+150 (cid:176) C stg Tj Maximumoperatingjunctiontemperature* 150 (cid:176) C dV/dt Criticalrateofriseofreversevoltage 10000 V/µs dPtot 1 * : < thermal runawayconditionforadiodeonitsownheatsink dTj Rth(j- a) July2003-Ed:5B 1/5
STPS15L25D/G2/5 THERMALRESISTANCES Symbol Parameter Value Unit R Junctiontocase 1 (cid:176) C/W th(j-c) STATICELECTRICALCHARACTERISTICS Symbol Parameters Testconditions Min. Typ. Max. Unit IR * Reverseleakagecurrent Tj=25°C VR= 1.3 mA V RRM Tj=125°C 225 450 mA VF * Forwardvoltagedrop Tj=25°C IF=15A 0.46 V Tj=125°C IF=15A 0.3 0.35 Tj=25°C IF=30A 0.56 Tj=125°C IF=30A 0.41 0.46 Pulsetest: *tp=380µs,d <2% Toevaluatethemaximumconductionlossesusethefollowingequation: P=0.24xI +0.0073I 2 F(AV) F (RMS) Fig.1:Averageforward powerdissipationversus Fig. 2: Average forward current versus ambient averageforwardcurrent. temperature(d =0.5). PF(av)(W) IF(av)(A) 16 8 7 d = 0.05 d = 0.1 d = 0.2 d = 0.5 14 Rth(j-a)=Rth(j-c) 12 6 5 10 4 d = 1 8 Rth(j-a)=50°C/W 3 6 2 T 4 T 1 2 IF(av) (A) d =tp/T tp d =tp/T tp Tamb(°C) 0 0 0 2 4 6 8 10 12 14 16 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versuspulseduration. versusjunctiontemperature. PARM(tp) PARM(tp) PARM(1µs) PARM(25°C) 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 tp(µs) Tj(°C) 0.001 0 0.01 0.1 1 10 100 1000 0 25 50 75 100 125 150
STPS15L25D/G3/5 Fig. 5: Non repetitive surge peak forward current Fig. 6: Relative variation of thermal impedance versusoverloadduration(maximumvalues). junctiontocaseversuspulseduration. IM(A) Zth(j-c)/Rth(j-c) 350 1.0 300 0.8 250 200 Tc=25°C 0.6 d = 0.5 150 Tc=75°C 0.4 100 d = 0.2 T IM Tc=100°C 0.2 d = 0.1 50 d=t0.5 t(s) Single pulse t(s) d =tp/T tp 0 0.0 1E-3 1E-2 1E-1 1E+0 1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0 Fig. 7: Reverse leakage current versus reverse Fig. 8: Junction capacitance versus reverse voltageapplied (typicalvalues). voltageapplied(typicalvalues). IR(mA) C(nF) 1E+3 5.0 Tj=150°C F=1MHz 1E+2 Tj=125°C Tj=25°C 1E+1 1.0 1E+0 Tj=25°C 1E-1 VR(V) VR(V) 1E-2 0.1 0 5 10 15 20 25 1 2 5 10 20 30 Fig. 9: Forward voltage drop versus forward Fig. 10: Thermal resistance junction to ambient current(maximumvalues). versus copper surface under tab (Epoxy printed circuitboardFR4,copperthickness:35µm). (STPS15L25Gonly) IFM(A) Rth(j-a) (°C/W) 200.0 80 100.0 70 Typical values Tj=150°C 60 10.0 50 Tj=125°C 40 Tj=25°C 30 1.0 20 10 VFM(V) S(Cu) (cm²) 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 4 8 12 16 20 24 28 32 36 40
STPS15L25D/G4/5 PACKAGEMECHANICALDATA D2PAK DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A A1 2.49 2.69 0.098 0.106 E C2 L2 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 D L C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 L3 A1 D 8.95 9.35 0.352 0.368 B2 E 10.00 10.40 0.393 0.409 C R B G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 G L2 1.27 1.40 0.050 0.055 A2 L3 1.40 1.75 0.055 0.069 2.0 MIN. FLAT ZONE M 2.40 3.20 0.094 0.126 R 0.40typ. 0.016typ. V2 V2 0° 8° 0° 8° FOOT PRINT DIMENSIONS(in millimeters) COOLING METHOD: BY CONDUCTION 16.90 n (METHODC) 10.30 5.08 1.30 3.70 8.90
STPS15L25D/G5/5 PACKAGEMECHANICALDATA TO-220AC DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 H2 A C 1.23 1.32 0.048 0.051 C D 2.40 2.72 0.094 0.107 L5 L7 E 0.49 0.70 0.019 0.027 Ø I F 0.61 0.88 0.024 0.034 L6 F1 1.14 1.70 0.044 0.066 L2 G 4.95 5.15 0.194 0.202 D H2 10.00 10.40 0.393 0.409 L9 L2 16.40typ. 0.645typ. F1 L4 L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 M F E L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 G L9 3.50 3.93 0.137 0.154 M 2.6typ. 0.102typ. Diam.I 3.75 3.85 0.147 0.151 COOLINGMETHOD:C n RECOMMENDEDTORQUEVALUE:0.55M.N n MAXIMUMTORQUEVALUE:0.70M.N n Delivery Orderingtype Marking Package Weight Baseqty mode STPS15L25D STPS15L25D TO-220AC 1.86g 50 Tube STPS15L25G STPS15L25G D2PAK 1.48g 50 Tube STPS15L25G-TR STPS15L25G D2PAK 1.48g 1000 Tape&reel EPOXYMEETSUL94,V0 n Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof useofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.Nolicenseisgrantedby implicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjectto changewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied. STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswritten approvalofSTMicroelectronics. TheSTlogoisaregisteredtrademarkofSTMicroelectronics ©2003STMicroelectronics-PrintedinItaly-Allrightsreserved. STMicroelectronicsGROUPOFCOMPANIES Australia-Brazil-Canada-China-Finland-France-Germany HongKong-India-Israel-Italy-Japan-Malaysia-Malta-Morocco-Singapore Spain-Sweden-Switzerland-UnitedKingdom-UnitedStates. http://www.st.com
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