STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 Ω N-CHANNEL 500V - 0.72 - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH™ MOSFET TYPE VDSS RDS(on) ID Pw STP9NK50Z 500V <0.85Ω 7.2A 110W STP9NK50ZFP 500V <0.85Ω 7.2A 30W STB9NK50Z 500V <0.85Ω 7.2A 110W STB9NK50Z-1 500V <0.85Ω 7.2A 110W 3 (cid:1) TYPICALRDS(on)=0.72Ω 12 EXTREMELY HIGHdv/dtCAPABILITY (cid:1) TO-220FP TO-220 100% AVALANCHE TESTED (cid:1) GATECHARGE MINIMIZED (cid:1) VERYLOWINTRINSICCAPACITANCES (cid:1) VERYGOODMANUFACTURING (cid:1) REPEATIBILITY 3 1 123 D2PAK I2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- INTERNALSCHEMATICDIAGRAM basedPowerMESH™layout.Inadditiontopushing on-resistancesignificantlydown,specialcareistak- en to ensure a very good dv/dt capability for the most demanding applications. Such seriescomple- ments ST full range of high voltage MOSFETs in- cludingrevolutionaryMDmesh™products. APPLICATIONS HIGHCURRENT,HIGHSPEEDSWITCHING (cid:1) IDEALFOROFF-LINE POWERSUPPLIES, (cid:1) ADAPTORS ANDPFC LIGHTING (cid:1) ORDERINGINFORMATION SALESTYPE MARKING PACKAGE PACKAGING STP9NK50Z P9NK50Z TO-220 TUBE STP9NK50ZFP P9NK50ZFP TO-220FP TUBE STB9NK50ZT4 B9NK50Z D2PAK TAPE&REEL STB9NK50Z-1 B9NK50Z I2PAK TUBE June2004 1/13

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 ABSOLUTEMAXIMUMRATINGS Symbol Parameter Value Unit STP9NK50Z STB9NK50Z STP9NK50ZFP STB9NK50Z-1 VDS Drain-sourceVoltage(VGS=0) 500 V VDGR Drain-gateVoltage(RGS=20kΩ) 500 V VGS Gate-sourceVoltage ±30 V ID DrainCurrent(continuous)atTC=25°C 7.2 7.2(*) A ID DrainCurrent(continuous)atTC=100°C 4.5 4.5(*) A IDM((cid:1)) DrainCurrent(pulsed) 28.8 28.8(*) A PTOT TotalDissipationatTC=25°C 110 30 W DeratingFactor 0.88 0.24 W/°C VESD(G-S) GatesourceESD(HBM-C=100pF,R=1.5KΩ) 3500 V dv/dt(1) PeakDiodeRecoveryvoltageslope 4.5 V/ns VISO InsulationWithstandVoltage(DC) - 2500 V Tj OperatingJunctionTemperature -55to150 °C Tstg StorageTemperature -55to150 °C (cid:1) ( )Pulsewidthlimitedbysafeoperatingarea (1)ISD≤7.2A,di/dt≤200A/µs,VDD≤V(BR)DSS,Tj≤TJMAX. (*)Limitedonlybymaximumtemperatureallowed THERMALDATA TO-220/D2PAK/ TO-220FP I2PAK Rthj-case ThermalResistanceJunction-caseMax 1.14 4.2 °C/W Rthj-amb ThermalResistanceJunction-ambientMax 62.5 °C/W Tl MaximumLeadTemperatureForSolderingPurpose 300 °C AVALANCHE CHARACTERISTICS Symbol Parameter MaxValue Unit IAR AvalancheCurrent,RepetitiveorNot-Repetitive 7.2 A (pulsewidthlimitedbyTjmax) EAS SinglePulseAvalancheEnergy 190 mJ (startingTj=25°C,ID=IAR,VDD=50V) GATE-SOURCEZENERDIODE Symbol Parameter TestConditions Min. Typ. Max. Unit BVGSO Gate-SourceBreakdown Igs=±1mA(OpenDrain) 30 V Voltage PROTECTIONFEATURESOFGATE-TO-SOURCE ZENERDIODES Thebuilt-inback-to-backZenerdiodeshavespecificallybeendesignedtoenhancenotonlythedevice’s ESDcapability,butalsotomakethemsafelyabsorbpossiblevoltagetransientsthatmayoccasionallybe appliedfromgatetosouce.InthisrespecttheZenervoltageisappropriatetoachieveanefficientandcost- effectiveinterventiontoprotectthedevice’sintegrity.TheseintegratedZenerdiodesthusavoidtheusage ofexternalcomponents. 2/13

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 ELECTRICALCHARACTERISTICS (TCASE =25°CUNLESSOTHERWISE SPECIFIED) ON/OFF Symbol Parameter TestConditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID=1mA,VGS=0 500 V BreakdownVoltage IDSS ZeroGateVoltage VDS=MaxRating 1 µA DrainCurrent(VGS=0) VDS=MaxRating,TC=125°C 50 µA IGSS Gate-bodyLeakage VGS=±20V ±10 µA Current(VDS=0) VGS(th) GateThresholdVoltage VDS=VGS,ID=100µA 3 3.75 4.5 V RDS(on) StaticDrain-sourceOn VGS=10V,ID=3.6A 0.72 0.85 Ω Resistance DYNAMIC Symbol Parameter TestConditions Min. Typ. Max. Unit gfs(1) ForwardTransconductance VDS=15V,ID=3.6A 5.3 S Ciss InputCapacitance VDS=25V,f=1MHz,VGS=0 910 pF Coss OutputCapacitance 125 pF Crss ReverseTransfer 30 pF Capacitance Cosseq.(3) EquivalentOutput VGS=0V,VDS=0Vto400V 75 pF Capacitance SWITCHINGON Symbol Parameter TestConditions Min. Typ. Max. Unit td(on) Turn-onDelayTime VDD=250V,ID=3.6A 17 ns tr RiseTime RG=4.7ΩVGS=10V 20 ns (ResistiveLoadsee,Figure3) Qg TotalGateCharge VDD=400V,ID=7.2A, 32 nC Qgs Gate-SourceCharge VGS=10V 6 nC Qgd Gate-DrainCharge 18 nC SWITCHINGOFF Symbol Parameter TestConditions Min. Typ. Max. Unit td(off) Turn-offDelayTime VDD=250V,ID=3.6A 45 ns tf FallTime RG=4.7ΩVGS=10V 22 ns (ResistiveLoadsee,Figure3) tr(Voff) Off-voltageRiseTime VDD=400V,ID=7.2A, 15 ns tf FallTime RG=4.7Ω,VGS=10V 13 ns tc Cross-overTime (InductiveLoadsee,Figure5) 30 ns SOURCEDRAINDIODE Symbol Parameter TestConditions Min. Typ. Max. Unit ISD Source-drainCurrent 7.2 A ISDM(2) Source-drainCurrent(pulsed) 28.8 A VSD(1) ForwardOnVoltage ISD=7.2A,VGS=0 1.6 V trr ReverseRecoveryTime ISD=7.2A,di/dt=100A/µs 238 ns Qrr ReverseRecoveryCharge VDD=40V,Tj=150°C 1.5 µC IRRM ReverseRecoveryCurrent (seetestcircuit,Figure5) 12.6 A Note: 1. Pulsed:Pulseduration=300µs,dutycycle1.5%. 2. Pulsewidthlimitedbysafeoperatingarea. 3. Cosseq.isdefinedasaconstantequivalentcapacitancegivingthesamechargingtimeasCosswhenVDSincreasesfrom0to80% VDSS. 3/13

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 SafeOperatingAreaForTO-220/D2PAK/I2PAK ThermalImpedanceForTO-220/D2PAK/I2PAK SafeOperatingAreaForTO-220FP ThermalImpedanceForTO-220FP OutputCharacteristics TransferCharacteristics 4/13

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Transconductance StaticDrain-sourceOnResistance GateChargevsGate-sourceVoltage CapacitanceVariations NormalizedGateThresholdVoltagevsTemp. NormalizedOnResistancevsTemperature 5/13

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Source-drainDiodeForwardCharacteristics NormalizedBVDSSvsTemperature Maximum AvalancheEnergyvsTemperature 6/13

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Fig.1:UnclampedInductiveLoadTestCircuit Fig.2:UnclampedInductiveWaveform Fig.3:SwitchingTimesTestCircuitFor Fig.4:GateChargetestCircuit ResistiveLoad Fig.5:Test CircuitForInductiveLoadSwitching AndDiodeRecoveryTimes 7/13

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 TO-220 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 E A C D 1 D L2 1 F 1 G 2 G H Dia. F 2 L5 F L9 L7 L6 L4 P011C 8/13

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 9/13

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 8º 3 10/13 1

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 TO-262(I2PAK)MECHANICALDATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 11/13

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 2 D PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULKQTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 *onsalestype 12/13

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 13/13

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