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  • 型号: STP80NF10
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STP80NF10产品简介:

ICGOO电子元器件商城为您提供STP80NF10由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STP80NF10价格参考。STMicroelectronicsSTP80NF10封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 100V 80A(Tc) 300W(Tc) TO-220AB。您可以下载STP80NF10参考资料、Datasheet数据手册功能说明书,资料中有STP80NF10 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

ChannelMode

Enhancement

描述

MOSFET N-CH 100V 80A TO-220MOSFET N-Ch 100 Volt 80 Amp

产品分类

FET - 单分离式半导体

FET功能

标准

FET类型

MOSFET N 通道,金属氧化物

Id-ContinuousDrainCurrent

80 A

Id-连续漏极电流

80 A

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,MOSFET,STMicroelectronics STP80NF10STripFET™ II

数据手册

点击此处下载产品Datasheet

产品型号

STP80NF10

Pd-PowerDissipation

300 W

Pd-功率耗散

300 W

RdsOn-Drain-SourceResistance

15 mOhms

RdsOn-漏源导通电阻

15 mOhms

Vds-Drain-SourceBreakdownVoltage

100 V

Vds-漏源极击穿电压

100 V

Vgs-Gate-SourceBreakdownVoltage

+/- 20 V

Vgs-栅源极击穿电压

20 V

上升时间

80 ns

下降时间

60 ns

不同Id时的Vgs(th)(最大值)

4V @ 250µA

不同Vds时的输入电容(Ciss)

5500pF @ 25V

不同Vgs时的栅极电荷(Qg)

182nC @ 10V

不同 Id、Vgs时的 RdsOn(最大值)

15 毫欧 @ 40A,10V

产品目录页面

点击此处下载产品Datasheet

产品种类

MOSFET

供应商器件封装

TO-220AB

其它名称

497-2642-5

其它有关文件

http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1165/PF64797?referrer=70071840

典型关闭延迟时间

116 ns

功率-最大值

300W

包装

管件

单位重量

1.438 g

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3

封装/箱体

TO-220-3

工厂包装数量

500

晶体管极性

N-Channel

最大工作温度

+ 175 C

最小工作温度

- 55 C

标准包装

50

正向跨导-最小值

50 S

漏源极电压(Vdss)

100V

电流-连续漏极(Id)(25°C时)

80A (Tc)

系列

STP80NF10

通道模式

Enhancement

配置

Single

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PDF Datasheet 数据手册内容提取

STB80NF10 STP80NF10 Ω 2 N-channel 100 V, 0.012 , 80 A, TO-220, D PAK low gate charge STripFET™ II Power MOSFET Features R Type V DS(on) I DSS max D STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015 Ω 80 A ■ Exceptional dv/dt capability 3 3 2 1 ■ 100% Avalanche tested 1 ■ Application oriented characterization TO-220 D²PAK Applications ■ Switching applications Description Figure 1. Internal schematic diagram This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. Table 1. Device summary Order codes Marking Package Packaging STP80NF10 P80NF10@ TO-220 Tube STB80NF10T4 B80NF10@ D²PAK Tape and reel April 2009 Doc ID 6958 Rev 18 1/14 www.st.com 14

Contents STB80NF10, STP80NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/14 Doc ID 6958 Rev 18

STB80NF10, STP80NF10 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 100 V DS GS V Gate- source voltage ±20 V GS I (1) Drain current (continuous) at T = 25 °C 80 A D C I (1) Drain current (continuous) at T = 100 °C 80 A D C I (2) Drain current (pulsed) 320 A DM P Total dissipation at T = 25 °C 300 W TOT C Derating factor 2 W/°C dv/dt (3) Peak diode recovery voltage slope 7 V/ns E (4) Single pulse avalanche energy 350 mJ AS T Storage temperature stg -55 to 175 °C Tj Operating junction temperature 1. Limited by package 2. Pulse width limited by safe operating area 3. I < 80 A, di/dt < 300 A/µs, V = 80% V SD DD (BR)DSS 4. Starting Tj = 25 °C, I = 40 A, V = 50 V D DD Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W T Maximum lead temperature for soldering purpose 300 °C l Doc ID 6958 Rev 18 3/14

Electrical characteristics STB80NF10, STP80NF10 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250 µA, V = 0 100 V (BR)DSS breakdown voltage D GS Zero gate voltage V = Max rating 500 nA I DS DSS drain current (V = 0) V = Max rating @125°C 10 µA GS DS Gate-body leakage I V = ±20 V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 2 3 4 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 40 A 0.012 0.015 Ω DS(on) resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) Forward transconductance V = 25 V I =40 A - 50 S fs DS , D Input capacitance C 5500 pF Ciss Output capacitance VDS = 25 V, f = 1 MHz, - 700 pF Coss Reverse transfer VGS = 0 175 pF rss capacitance Q Total gate charge 135 182 nC g V = 50 V, I = 80 A, Q Gate-source charge DD D - 23 nC gs V = 10 V Q Gate-drain charge GS 51.3 nC gd 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time 26 ns d(on) V = 50 V, I = 40 A, t Rise time DD D 80 ns r R =4.7 Ω, V =10 V - - t Turn-off-delay time G GS 116 ns d(off) (see Figure 15) t Fall time 60 ns f 4/14 Doc ID 6958 Rev 18

STB80NF10, STP80NF10 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit I Source-drain current - 80 A SD I (1) Source-drain current (pulsed) - 320 A SDM V (2) Forward on voltage I = 80 A, V = 0 - 1.3 V SD SD GS t Reverse recovery time I =80 A, V = 50 V 106 ns rr SD DD Q Reverse recovery charge di/dt = 100 A/µs, - 450 nC rr I Reverse recovery current T=150 °C 8.5 A RRM j 1. Pulse width limited by safe operating area 2. Pulse duration=300µs, duty cycle 1.5% Doc ID 6958 Rev 18 5/14

Electrical characteristics STB80NF10, STP80NF10 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/14 Doc ID 6958 Rev 18

STB80NF10, STP80NF10 Electrical characteristics Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs. vs. temperature temperature Figure 12. Source-drain diode forward characteristics Doc ID 6958 Rev 18 7/14

Test circuits STB80NF10, STP80NF10 3 Test circuits Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2µ20F0 3µ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf 90% 90% IDM 10% ID 0 10% VDS VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/14 Doc ID 6958 Rev 18

STB80NF10, STP80NF10 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 6958 Rev 18 9/14

Package mechanical data STB80NF10, STP80NF10 TO-220 mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.6 0.62 D1 1.27 0.050 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.051 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 ∅P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 10/14 Doc ID 6958 Rev 18

STB80NF10, STP80NF10 Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 A1 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 7.50 0.295 E 10 10.40 0.394 0.409 E1 8.50 0.334 e 2.54 0.1 e1 4.88 5.28 0.192 0.208 H 15 15.85 0.590 0.624 J1 2.49 2.69 0.099 0.106 L 2.29 2.79 0.090 0.110 L1 1.27 1.40 0.05 0.055 L2 1.30 1.75 0.051 0.069 R 0.4 0.016 V2 0° 8° 0° 8° 0079457_M Doc ID 6958 Rev 18 11/14

Packaging mechanical data STB80NF10, STP80NF10 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type 12/14 Doc ID 6958 Rev 18

STB80NF10, STP80NF10 Revision history 6 Revision history T able 8. Document revision history Date Revision Changes 04-Nov-2003 8 New datasheet according to PCN DSG-TRA/03/382 13-Dec-2004 9 D²PAK inserted 16-Dec-2004 10 @ inserted in table 2 for TO-220 marking 27-Jan-2005 11 New value in table 3 22-Feb-2005 12 Id value changed 28-Feb-2005 13 New value in table 3 01-Mar-2005 14 Vgs value changed 06-Apr-2006 15 The document has been reformatted 25-Jan-2007 16 Typo mistake on page 1 (order codes) 17-Nov-2008 17 E value has been updated AS 15-Apr-2009 18 I value changed in Table4: On/off states DSS Doc ID 6958 Rev 18 13/14

STB80NF10, STP80NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 Doc ID 6958 Rev 18

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