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STP75NF75产品简介:
ICGOO电子元器件商城为您提供STP75NF75由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STP75NF75价格参考。STMicroelectronicsSTP75NF75封装/规格:晶体管 - FET,MOSFET - 单, N-Channel 75V 80A (Tc) 300W (Tc) Through Hole TO-220AB。您可以下载STP75NF75参考资料、Datasheet数据手册功能说明书,资料中有STP75NF75 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
ChannelMode | Enhancement |
描述 | MOSFET N-CH 75V 80A TO-220MOSFET N-Ch 75 Volt 80 Amp |
产品分类 | FET - 单分离式半导体 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-ContinuousDrainCurrent | 80 A |
Id-连续漏极电流 | 80 A |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,STMicroelectronics STP75NF75STripFET™ II |
数据手册 | |
产品型号 | STP75NF75 |
Pd-PowerDissipation | 300 W |
Pd-功率耗散 | 300 W |
RdsOn-Drain-SourceResistance | 9.5 mOhms |
RdsOn-漏源导通电阻 | 9.5 mOhms |
Vds-Drain-SourceBreakdownVoltage | 75 V |
Vds-漏源极击穿电压 | 75 V |
Vgs-Gate-SourceBreakdownVoltage | +/- 20 V |
Vgs-栅源极击穿电压 | 20 V |
上升时间 | 100 ns |
下降时间 | 30 ns |
不同Id时的Vgs(th)(最大值) | 4V @ 250µA |
不同Vds时的输入电容(Ciss) | 3700pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 160nC @ 10V |
不同 Id、Vgs时的 RdsOn(最大值) | 11 毫欧 @ 40A,10V |
产品目录页面 | |
产品种类 | MOSFET |
供应商器件封装 | TO-220AB |
其它名称 | 497-2788-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL824/SC1165/PF64783?referrer=70071840 |
典型关闭延迟时间 | 66 ns |
功率-最大值 | 300W |
包装 | 管件 |
单位重量 | 1.438 g |
商标 | STMicroelectronics |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-3 |
封装/箱体 | TO-220-3 |
工厂包装数量 | 1000 |
晶体管极性 | N-Channel |
最大工作温度 | + 175 C |
最小工作温度 | - 55 C |
标准包装 | 50 |
正向跨导-最小值 | 20 S |
漏源极电压(Vdss) | 75V |
电流-连续漏极(Id)(25°C时) | 80A (Tc) |
系列 | STP75NF75 |
通道模式 | Enhancement |
配置 | Single |
STB75NF75 STP75NF75 - STP75NF75FP Ω 2 N-channel 75V - 0.0095 - 80A - TO-220 - TO-220FP - D PAK STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STB75NF75 75V <0.011Ω 80A(1) STP75NF75 75V <0.011Ω 80A(1) 3 23 2 1 1 STP75NF75FP 75V <0.011Ω 80A(1) TO-220 TO-220FP 1. Current limited by package ■ Exceptional dv/dt capability ■ 100% avalanche tested 3 1 D²PAK Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process Internal schematic diagram has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Applications ■ Switching application Order codes Part number Marking Package Packaging STB75NF75T4 B75NF75 D²PAK Tape & reel STP75NF75 P75NF75 TO-220 Tube STP75NF75FP P75NF75 TO-220FP Tube February 2007 Rev 8 1/16 www.st.com 16
Contents STB75NF75 - STP75NF75 - STP75NF75FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16
STB75NF75 - STP75NF75 - STP75NF75FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit D2PAK /TO-220 TO-220FP V Drain-source voltage (V = 0) 75 V DS GS V Drain-gate voltage (R = 20KΩ) 75 V DGR GS V Gate-source voltage ± 20 V GS I (1) Drain current (continuous) at T = 25°C 80 80 A D C ID(1) Drain current (continuous) at TC=100°C 70 70 A IDM(2) Drain current (pulsed) 320 320 A P Total dissipation at T = 25°C 300 45 W TOT C Derating factor 2.0 0.3 W/°C dv/dt (3) Peak diode recovery voltage slope 12 V/ns E (4) Single pulse avalanche energy 700 mJ AS Insulation withstand voltage (RMS) from all V -- 2000 V ISO three leads to external heat sink (t=1s;T =25°C) C TJ Operating junction temperature -55 to 175 °C T Storage temperature stg 1. Current limited by package 2. Pulse width limited by safe operating area 3. I ≤ 80A, di/dt ≤ 300A/µs, V ≤ V , T ≤ T SD DD (BR)DSS j JMAX 4. Starting T = 25 oC, I = 40A, V = 37.5V J D DD Table 2. Thermal data Value Symbol Parameter Unit D2PAK /TO-220 TO-220FP R Thermal resistance junction-case max 0.5 3.33 °C/W thJC R Thermal resistance junction-ambient max 62.5 °C/W thJA Maximum lead temperature for soldering T 300 °C l purpose(1) 1. 1.6mm from case for 10sec) 3/16
Electrical characteristics STB75NF75 - STP75NF75 - STP75NF75FP 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Dvorlataing-esource breakdown ID = 250µA, VGS= 0 75 V Zero gate voltage drain VDS = Max rating, 1 µA I DSS current (VGS = 0) VDS = Max rating @125°C 10 µA Gate body leakage current IGSS (V = 0) VGS = ±20V ±100 nA DS VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V Static drain-source on RDS(on) resistance VGS= 10V, ID= 40A 0.0095 0.011 Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 15V, ID = 40A 20 S C Input capacitance iss 3700 pF C Output capacitance VDS =25V, f = 1 MHz, oss 730 pF Crss Reverse transfer VGS = 0 240 pF capacitance Qg Total gate charge V = 60V, I = 80A 117 160 nC DD D Qgs Gate-source charge 27 nC V =10V Q Gate-drain charge GS 47 nC gd 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/16
STB75NF75 - STP75NF75 - STP75NF75FP Electrical characteristics Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time 25 ns V = 37.5V, I = 45A, tr Rise time RDD=4.7Ω, V D=10V 100 ns t Turn-off delay time G GS 66 ns d(off) Figure15 on page9 t Fall time 30 ns f Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 80 A I (1) Source-drain current (pulsed) 320 A SDM VSD(2) Forward on voltage ISD = 80A, VGS = 0 1.5 V I = 80A, trr Reverse recovery time SD 132 ns di/dt = 100A/µs, Qrr Reverse recovery charge 660 nC V = 25V, T = 150°C I Reverse recovery current DD J 10 A RRM Figure17 on page9 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/16
Electrical characteristics STB75NF75 - STP75NF75 - STP75NF75FP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 - Figure 2. Thermal impedancefor TO-220 - D²PAK D²PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/16
STB75NF75 - STP75NF75 - STP75NF75FP Electrical characteristics Figure 7. Transconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs vs temperature temperature 7/16
Electrical characteristics STB75NF75 - STP75NF75 - STP75NF75FP Figure 13. Source-drain diode forward Figure 14. Normalized B vs temperature VDSS characteristics 8/16
STB75NF75 - STP75NF75 - STP75NF75FP Test circuit 3 Test circuit Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform 9/16
Package mechanical data STB75NF75 - STP75NF75 - STP75NF75FP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16
STB75NF75 - STP75NF75 - STP75NF75FP Package mechanical data TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/16
Package mechanical data STB75NF75 - STP75NF75 - STP75NF75FP D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 4º 3 1 12/16
STB75NF75 - STP75NF75 - STP75NF75FP Package mechanical data TO-220FP MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 E A D B L3 L6 L7 1 F F 1 G H G 2 F 1 2 3 L5 L2 L4 13/16
Packaging mechanical data STB75NF75 - STP75NF75 - STP75NF75FP 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 14/16
STB75NF75 - STP75NF75 - STP75NF75FP Revision history 6 Revision history T able 7. Revision history Date Revision Changes 03-Aug-2006 6 Complete version 15-Sep-2006 7 R value update DS(on) 27-Feb-2007 8 The document has been reformatted 15/16
STB75NF75 - STP75NF75 - STP75NF75FP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16
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